Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D087
BSP126
N-channel enhancement mode
vertical D-MOS transistor
Product specification
Supersedes data of 1997 Jun 23
2002 Feb 19
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSP126
FEATURES
PINNING - SOT223
• Direct interface to C-MOS, TTL, etc.
PIN
DESCRIPTION
• High-speed switching
1
gate
• No secondary breakdown.
2
drain
3
source
4
drain
APPLICATIONS
• Line current interruptor in telephone sets
• Relay, high-speed and line transformer drivers.
d
4
handbook, halfpage
DESCRIPTION
N-channel enhancement mode vertical D-MOS transistor
in a miniature SOT223 package.
g
1
MARKING
2
TYPE NUMBER
MARKING CODE
BSP126
s
3
Top view
MAM054
Fig.1 Simplified outline and symbol.
BSP126
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
−
250
V
−
375
mA
−
1.5
W
drain-source on-state resistance ID = 300 mA; VGS = 10 V
2.8
5
Ω
gate-source threshold voltage
−
2
V
VDS
drain-source voltage (DC)
ID
drain current (DC)
Ptot
total power dissipation
RDSon
VGSth
Tamb ≤ 25 °C
ID = 1 mA; VDS = VGS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
−
250
V
−
±20
V
−
375
mA
−
1.3
A
−
1.5
W
storage temperature
−55
+150
°C
junction temperature
−
150
°C
VDS
drain-source voltage (DC)
VGSO
gate-source voltage (DC)
ID
drain current (DC)
IDM
peak drain current
Ptot
total power dissipation
Tstg
Tj
open drain
Tamb ≤ 25 °C; note 1
Note
1. Device mounted on a 40 × 40 × 1.5 mm epoxy printed-circuit board; mounting pad for the drain tab minimum 6 cm2.
2002 Feb 19
2
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSP126
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
VALUE
UNIT
83.3
K/W
thermal resistance from junction to ambient; note 1
Note
1. Device mounted on a 40 × 40 × 1.5 mm epoxy printed-circuit board; mounting pad for the drain tab minimum 6 cm2.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
V(BR)DSS
drain-source breakdown voltage
ID = 10 µA; VGS = 0
250
−
−
V
IGSS
gate-source leakage current
VGS = ±20 V; VDS = 0
−
−
±100
nA
VGSth
gate-source threshold voltage
ID = 1 mA; VDS = VGS
0.8
−
2
V
RDSon
drain-source on-state resistance
ID = 20 mA; VGS = 2.4 V
−
−
7.5
Ω
ID = 300 mA; VGS = 10 V
−
2.8
5
Ω
IDSS
drain-source leakage current
VDS = 200 V; VGS = 0
−
−
1
µA
 Yfs
transfer admittance
ID = 300 mA; VDS = 25 V
200
600
−
mS
Ciss
input capacitance
VDS = 25 V; VGS = 0; f = 1 MHz
−
100
120
pF
Coss
output capacitance
VDS = 25 V; VGS = 0; f = 1 MHz
−
21
30
pF
Crss
feedback capacitance
VDS = 25 V; VGS = 0; f = 1 MHz
−
10
15
pF
Switching times (see Figs 2 and 3)
ton
turn-on time
ID = 250 mA; VDD = 50 V;
VGS = 0 to 10 V
−
6
10
ns
toff
turn-off time
ID = 250 mA; VDD = 50 V;
VGS = 10 to 0 V
−
47
60
ns
2002 Feb 19
3
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSP126
handbook, halfpage
VDD = 50 V
handbook, halfpage
90 %
INPUT
10 %
90 %
OUTPUT
10 V
ID
0V
10 %
50 Ω
ton
MBB691
MBB692
Fig.2 Switching times test circuit.
Fig.3 Input and output waveforms.
MBB693
2
toff
MGU569
1.2
handbook, halfpage
handbook, halfpage
Ptot
(1)
(2)
ID
(A)
(W)
1.6
(3)
(4)
0.8
1.2
(5)
0.8
0.4
(6)
0.4
(7)
0
0
0
50
100
200
150
Tamb (°C)
0
2
4
6
8
10
VDS (V)
Tj = 25 °C.
(1) VGS = 10 V.
(2) VGS = 5 V.
(3) VGS = 4 V.
Fig.4 Power derating curve.
2002 Feb 19
Fig.5
4
(4) VGS = 3.5 V.
(5) VGS = 3 V.
(6) VGS = 2.5 V.
(7) VGS = 2 V.
Typical output characteristics.
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSP126
MGU570
1.6
(A)
MGU571
20
handbook,
ID halfpage
handbook, halfpage
1.4
RDSon
(Ω)
1.2
15
(1)
(2)
1
0.8
10
(3)
0.6
5
0.4
(4)
(5)
(6)
0.2
0
10−1
0
0
2
4
6
8
10
VGS (V)
1
ID (A)
10
Tj = 25 °C.
(1) VGS = 2.5 V.
(2) VGS = 3 V.
(3) VGS = 3.5 V.
(4) VGS = 4 V.
(5) VGS = 5 V.
(6) VGS = 10 V.
VDS = 10 V; Tj = 25 °C.
Fig.7
Fig.6 Typical transfer characteristics.
MGU572
250
handbook, halfpage
C
(pF)
200
150
Ciss
100
50
Coss
Crss
0
0
10
20
VDS (V)
30
VGS = 0; f = 1 MHz; Tj = 25 °C.
Fig.8
Input, output and feedback capacitance as
functions of drain-source voltage; typical
values.
2002 Feb 19
5
Drain-source on-state resistance as a
function of drain current; typical values.
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSP126
MGU573
2
MGU574
1.25
handbook, halfpage
handbook, halfpage
k
k
(1)
1
1.5
(2)
0.75
1
0.5
0.5
0.25
0
−50
0
50
100
0
−50
150
Tj (°C)
0
50
100
Tj (°C)
150
R DSon at T j
k = ---------------------------------------R DSon at 25 °C
V GSth at T j
k = --------------------------------------V GSth at 25 °C
Typical RDSon:
(1) ID = 250 mA; VGS = 10 V.
(2) ID = 20 mA; VGS = 2.4 V.
Fig.9
Typical VGSth at 1 mA.
Temperature coefficient of drain-source
on-state resistance; typical values.
2002 Feb 19
Fig.10 Temperature coefficient of gate-source
threshold voltage; typical values.
6
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSP126
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
D
SOT223
E
B
A
X
c
y
HE
v M A
b1
4
Q
A
A1
1
2
3
Lp
bp
e1
w M B
detail X
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.8
1.5
0.10
0.01
0.80
0.60
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
4.6
2.3
7.3
6.7
1.1
0.7
0.95
0.85
0.2
0.1
0.1
OUTLINE
VERSION
SOT223
2002 Feb 19
REFERENCES
IEC
JEDEC
EIAJ
SC-73
7
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSP126
DATA SHEET STATUS
DATA SHEET STATUS(1)
PRODUCT
STATUS(2)
DEFINITIONS
Objective data
Development
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2002 Feb 19
8
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSP126
NOTES
2002 Feb 19
9
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSP126
NOTES
2002 Feb 19
10
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSP126
NOTES
2002 Feb 19
11
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected]
SCA74
© Koninklijke Philips Electronics N.V. 2002
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613510/03/pp12
Date of release: 2002
Feb 19
Document order number:
9397 750 09311
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