Data Sheet

PMZ760SN
N-channel TrenchMOS standard level FET
Rev. 02 — 12 July 2007
Product data sheet
BOTTOM VIEW
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
TrenchMOS technology.
1.2 Features
n Profile 55 % lower than SOT23
n Low on-state resistance
n Leadless package
n Footprint 90 % smaller than SOT23
n Fast switching
n Standard level compatible threshold
1.3 Applications
n Driver circuits
n Load switching in portable appliances
1.4 Quick reference data
n VDS ≤ 60 V
n RDSon ≤ 900 mΩ
n ID ≤ 1.22 A
n Ptot ≤ 2.50 W
2. Pinning information
Table 1.
Pinning
Pin
Description
Simplified outline
1
gate (G)
2
source (S)
1
3
drain (D)
2
Symbol
D
3
Transparent
top view
SOT883 (SC-101)
G
mbb076
S
PMZ760SN
NXP Semiconductors
N-channel TrenchMOS standard level FET
3. Ordering information
Table 2.
Ordering information
Type number
PMZ760SN
Package
Name
Description
Version
SC-101
leadless ultra small plastic package; 3 solder lands;
body 1.0 × 0.6 × 0.5 mm
SOT883
4. Limiting values
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
25 °C ≤ Tj ≤ 150 °C
-
60
V
VDGR
drain-gate voltage (DC)
25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ
-
60
V
VGS
gate-source voltage
-
±20
V
ID
drain current
Tmb = 25 °C; VGS = 10 V; see Figure 2 and 3
-
1.22
A
Tmb = 100 °C; VGS = 10 V; see Figure 2
-
0.77
A
-
2.44
A
IDM
peak drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs; see Figure 3
Ptot
total power dissipation
Tmb = 25 °C; see Figure 1
-
2.50
W
Tstg
storage temperature
−55
+150
°C
Tj
junction temperature
−55
+150
°C
Source-drain diode
IS
source current
Tmb = 25 °C
-
1.22
A
ISM
peak source current
Tmb = 25 °C; pulsed; tp ≤ 10 µs
-
2.44
A
human body model; C = 100 pF; R = 1.5 kΩ
-
95
V
machine model; C = 200 pF
-
50
V
Electrostatic discharge
Vesd
electrostatic discharge voltage
all pins
PMZ760SN_2
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 02 — 12 July 2007
2 of 13
PMZ760SN
NXP Semiconductors
N-channel TrenchMOS standard level FET
03aa17
120
03aa25
120
Ider
(%)
Pder
(%)
80
80
40
40
0
0
0
50
100
150
Tsp (°C)
200
0
P tot
P der = ------------------------ × 100 %
P tot ( 25°C )
50
100
150
Tsp (°C)
200
ID
I der = -------------------- × 100 %
I D ( 25°C )
Fig 1. Normalized total power dissipation as a
function of solder point temperature
Fig 2. Normalized continuous drain current as a
function of solder point temperature
003aab832
10
Limit RDSon = VDS / ID
ID
(A)
tp = 10 µ s
1
100 µ s
DC
1 ms
10 ms
100 ms
10-1
10-2
10-1
1
10
102
103
VDS (V)
Tmb = 25 °C; IDM is single pulse
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PMZ760SN_2
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 02 — 12 July 2007
3 of 13
PMZ760SN
NXP Semiconductors
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 4.
Thermal characteristics
Symbol Parameter
thermal resistance from junction to solder point
Rth(j-sp)
see Figure 4
[1]
thermal resistance from junction to ambient
Rth(j-a)
[1]
Conditions
Min
Typ
Max
Unit
-
-
50
K/W
-
670
-
K/W
Mounted on a printed-circuit board; vertical in still air.
003aab831
102
Zth(j-sp)
(K/W)
δ = 0.5
0.2
10
0.1
0.05
δ=
P
0.02
single pulse
tp
T
t
tp
T
1
10-4
10-3
10-2
10-1
1
tp (s)
10
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration
PMZ760SN_2
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 02 — 12 July 2007
4 of 13
PMZ760SN
NXP Semiconductors
N-channel TrenchMOS standard level FET
6. Characteristics
Table 5.
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Tj = 25 °C
60
-
-
V
Tj = −55 °C
55
-
-
V
Static characteristics
V(BR)DSS drain-source breakdown
voltage
VGS(th)
IDSS
gate-source threshold voltage
drain leakage current
ID = 10 µA; VGS = 0 V
ID = 0.25 mA; VDS = VGS; see Figure 9 and 10
Tj = 25 °C
1
2
3
V
Tj = 150 °C
0.6
-
-
V
Tj = −55 °C
-
-
3.5
V
VDS = 60 V; VGS = 0 V
Tj = 25 °C
-
-
1
µA
Tj = 150 °C
-
-
100
µA
-
10
100
nA
IGSS
gate leakage current
VGS = ±20 V; VDS = 0 V
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 0.3 A; see Figure 6 and 8
Tj = 25 °C
-
760
900
mΩ
Tj = 150 °C
-
1400
1665
mΩ
VGS = 4.5 V; ID = 0.075 A; see Figure 6 and 8
-
1100
1600
mΩ
ID = 1 A; VDS = 30 V; VGS = 10 V;
see Figure 11 and 12
-
1.05
-
nC
-
0.2
-
nC
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGD
gate-drain charge
-
0.22
-
nC
VGS(pl)
gate-source plateau voltage
-
4
-
V
-
23
-
pF
-
4.8
-
pF
-
3.4
-
pF
-
2
-
ns
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer capacitance
td(on)
turn-on delay time
VGS = 0 V; VDS = 30 V; f = 1 MHz;
see Figure 14
VDS = 30 V; RL = 15 Ω; VGS = 10 V; RG = 6 Ω
tr
rise time
-
4
-
ns
td(off)
turn-off delay time
-
5
-
ns
tf
fall time
-
2.2
-
ns
-
0.83
1.2
V
Source-drain diode
VSD
source-drain voltage
IS = 0.3 A; VGS = 0 V; see Figure 13
PMZ760SN_2
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 02 — 12 July 2007
5 of 13
PMZ760SN
NXP Semiconductors
N-channel TrenchMOS standard level FET
03an88
2
03an89
3
10
6
ID
(A)
4
VGS (V) = 3.5
RDSon
(Ω)
4.5
1.5
5
2
4.5
1
5
4
6
10
1
0.5
3.5
VGS (V) = 3
0
0
0
1
2
VDS (V)
3
0
Tj = 25 °C
0.2
0.4
0.6
0.8
1
ID (A)
Tj = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
03an90
1
Fig 6. Drain-source on-state resistance as a function
of drain current; typical values
03aa28
2.4
ID
(A)
a
0.8
1.8
0.6
1.2
0.4
Tj = 150 °C
25 °C
0.6
0.2
0
0
1
2
3
4
VGS (V)
5
Tj = 25 °C and 150 °C; VDS > ID × RDSon
0
-60
60
120
Tj (°C)
180
R DSon
a = ----------------------------R DSon ( 25°C )
Fig 7. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature
PMZ760SN_2
Product data sheet
0
© NXP B.V. 2007. All rights reserved.
Rev. 02 — 12 July 2007
6 of 13
PMZ760SN
NXP Semiconductors
N-channel TrenchMOS standard level FET
03af65
4
03an32
10-3
ID
(A)
10-4
VGS(th)
(V)
3
max
10-5
2
typ
min
10-6
1
typ
min
1E-7
1E-8
0
-60
20
100
180
0
0.5
1
1.5
Tj (°C)
2
VGS (V)
2.5
Tj = 25 °C; VDS = 5 V
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
03an93
10
ID = 1 A
Tj = 25 °C
VDS = 30 V
VGS
(V)
8
VDS
ID
6
VGS(pl)
4
VGS(th)
VGS
2
QGS1
QGS2
QGS
0
0
0.3
0.6
0.9
QG (nC)
1.2
QGD
QG(tot)
003aaa508
ID = 1 A; VDS = 30 V
Fig 11. Gate-source voltage as a function of gate
charge; typical values
Fig 12. Gate charge waveform definitions
PMZ760SN_2
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 02 — 12 July 2007
7 of 13
PMZ760SN
NXP Semiconductors
N-channel TrenchMOS standard level FET
03an91
1
03an92
102
VGS = 0 V
IS
(A)
C
(pF)
0.8
Ciss
0.6
10
0.4
150 °C
Tj = 25 °C
Coss
Crss
0.2
0
0
0.3
0.6
0.9
VSD (V)
1.2
Tj = 25 °C and 150 °C; VGS = 0 V
1
10-1
10
VDS (V)
102
VGS = 0 V; f = 1 MHz
Fig 13. Source current as a function of source-drain
voltage; typical values
Fig 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PMZ760SN_2
Product data sheet
1
© NXP B.V. 2007. All rights reserved.
Rev. 02 — 12 July 2007
8 of 13
PMZ760SN
NXP Semiconductors
N-channel TrenchMOS standard level FET
7. Package outline
Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm
L
SOT883
L1
2
b
3
e
b1
1
e1
A
A1
E
D
0
0.5
1 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A (1)
A1
max.
b
b1
D
E
e
e1
L
L1
mm
0.50
0.46
0.03
0.20
0.12
0.55
0.47
0.62
0.55
1.02
0.95
0.35
0.65
0.30
0.22
0.30
0.22
Note
1. Including plating thickness
OUTLINE
VERSION
REFERENCES
IEC
SOT883
JEDEC
JEITA
SC-101
EUROPEAN
PROJECTION
ISSUE DATE
03-02-05
03-04-03
Fig 15. Package outline SO883 (SC-101)
PMZ760SN_2
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 02 — 12 July 2007
9 of 13
PMZ760SN
NXP Semiconductors
N-channel TrenchMOS standard level FET
8. Soldering
1.30
R = 0.05 (12×)
0.30
R = 0.05 (12×)
solder lands
0.35
(2×)
solder resist
0.90 0.20
0.60 0.70 0.80
occupied area
0.25
(2×)
solder paste
0.30
(2×)
0.40
(2×)
0.50
(2×)
0.30
0.40
0.50
MBL873
Dimensions in mm
Fig 16. Reflow soldering footprint for SOT883
PMZ760SN_2
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 02 — 12 July 2007
10 of 13
PMZ760SN
NXP Semiconductors
N-channel TrenchMOS standard level FET
9. Revision history
Table 6.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PMZ760SN _2
20070712
Product data sheet
-
PMZ760SN_01
Modifications:
PMZ760SN_01
(9397 750 11143)
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•
•
Legal texts have been adapted to the new company name where appropriate.
Numerous updates and corrections have been made throughout the data sheet, and all tbd
sections have been replaced, including Figure 3, Figure 4, Figure 5, Figure 6, and
Figure 12.
20030224
Objective data sheet
PMZ760SN_2
Product data sheet
-
-
© NXP B.V. 2007. All rights reserved.
Rev. 02 — 12 July 2007
11 of 13
PMZ760SN
NXP Semiconductors
N-channel TrenchMOS standard level FET
10. Legal information
10.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
10.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
10.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a NXP Semiconductors product can reasonably be expected to
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
10.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
TrenchMOS — is a trademark of NXP B.V.
11. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]
PMZ760SN_2
Product data sheet
© NXP B.V. 2007. All rights reserved.
Rev. 02 — 12 July 2007
12 of 13
PMZ760SN
NXP Semiconductors
N-channel TrenchMOS standard level FET
12. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
10.1
10.2
10.3
10.4
11
12
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Contact information. . . . . . . . . . . . . . . . . . . . . 12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 12 July 2007
Document identifier: PMZ760SN_2
Similar pages