Data Sheet

PML340SN
N-channel TrenchMOS standard level FET
Rev. 01 — 24 August 2006
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a
surface-mounted plastic package using TrenchMOS technology.
1.2 Features
n Standard level threshold
n Very low thermal impedance
n Low profile and small footprint
n Low on-state resistance
1.3 Applications
n Primary side switching
n DC-to-DC converters
1.4 Quick reference data
n VDS ≤ 220 V
n RDSon ≤ 386 mΩ
n ID ≤ 7.3 A
n QGD = 4.25 nC (typ)
2. Pinning information
Table 1.
Pinning
Pin
Description
1, 2, 3
source (S)
4
gate (G)
5, 6, 7, 8
drain (D)
Simplified outline
Symbol
8 7 6 5
D
G
1 2 3 4
Transparent
top view
SOT873-1 (HVSON8)
mbb076
S
PML340SN
Philips Semiconductors
N-channel TrenchMOS standard level FET
3. Ordering information
Table 2.
Ordering information
Type number
PML340SN
Package
Name
Description
Version
HVSON8
plastic thermal enhanced very thin small outline package; no leads; SOT873-1
8 terminals; body 3.3 × 3.3 × 0.85 mm
4. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
VDS
drain-source voltage
VGS
gate-source voltage
ID
drain current
Conditions
Min
Max
Unit
25 °C ≤ Tj ≤ 150 °C
-
220
V
-
±20
V
Tmb = 25 °C; VGS = 10 V; see Figure 2 and 3
-
7.3
A
Tmb = 100 °C; VGS = 10 V; see Figure 2
-
4.4
A
IDM
peak drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs; see Figure 3
-
14
A
Ptot
total power dissipation
Tmb = 25 °C; see Figure 1
-
50
W
Tstg
storage temperature
−55
+150
°C
Tj
junction temperature
−55
+150
°C
Source-drain diode
IS
source current
Tmb = 25 °C
-
7.6
A
ISM
peak source current
Tmb = 25 °C; pulsed; tp ≤ 10 µs
-
14
A
unclamped inductive load; ID = 3.5 A;
tp = 0.05 ms; VDS ≤ 220 V; RGS = 50 Ω;
VGS = 10 V; starting at Tj = 25 °C
-
22
mJ
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
PML340SN_1
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 24 August 2006
2 of 12
PML340SN
Philips Semiconductors
N-channel TrenchMOS standard level FET
03ne36
120
03ne37
120
Ider
(%)
Pder
(%)
80
80
40
40
0
0
0
50
100
150
200
0
50
100
Tmb (°C)
150
200
Tmb (°C)
P tot
P der = ------------------------ × 100 %
P tot ( 25°C )
ID
I der = -------------------- × 100 %
I D ( 25°C )
Fig 1. Normalized total power dissipation as a
function of mounting base temperature
Fig 2. Normalized continuous drain current as a
function of mounting base temperature
003aab516
102
Limit RDSon = VDS / ID
ID
(A)
tp = 10 µ s
10
100 µ s
DC
1
1 ms
10 ms
10-1
1
102
10
VDS (V)
103
Tmb = 25 °C; IDM is single pulse
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PML340SN_1
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 24 August 2006
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PML340SN
Philips Semiconductors
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 4.
Thermal characteristics
Symbol Parameter
Conditions
thermal resistance from junction to mounting base see Figure 4
Rth(j-mb)
Min
Typ
Max
Unit
-
-
2.5
K/W
003aab517
10
Zth(j-mb)
(K/W)
1
δ = 0.5
0.2
0.1
0.05
10-1
δ=
P
0.02
tp
T
single pulse
t
tp
T
10-2
10-5
10-4
10-3
10-2
10-1
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
PML340SN_1
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 24 August 2006
4 of 12
PML340SN
Philips Semiconductors
N-channel TrenchMOS standard level FET
6. Characteristics
Table 5.
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Tj = 25 °C
220
-
-
V
Tj = −55 °C
196
-
-
V
Static characteristics
V(BR)DSS drain-source breakdown
voltage
VGS(th)
IDSS
gate-source threshold voltage
drain leakage current
ID = 250 µA; VGS = 0 V
ID = 1 mA; VDS = VGS; see Figure 9 and 10
Tj = 25 °C
2
3
4
V
Tj = 150 °C
1.2
-
-
V
Tj = −55 °C
-
-
4.4
V
VDS = 176 V; VGS = 0 V
Tj = 25 °C
-
-
1
µA
Tj = 150 °C
-
-
100
µA
IGSS
gate leakage current
VGS = ±20 V; VDS = 0 V
-
10
100
nA
RG
gate resistance
f = 1 MHz
-
0.6
-
Ω
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 2.6 A; see Figure 6 and 8
Tj = 25 °C
-
320
386
mΩ
Tj = 150 °C
-
768
927
mΩ
VGS = 6 V; ID = 2.5 A
-
330
396
mΩ
ID = 2.6 A; VDS = 110 V; VGS = 10 V;
see Figure 11 and 12
-
13.2
-
nC
-
2.5
-
nC
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGS1
pre-VGS(th) gate-source charge
-
1.72
-
nC
QGS2
post-VGS(th) gate-source charge
-
0.78
-
nC
QGD
gate-drain charge
-
4.25
-
nC
VGS(pl)
gate-source plateau voltage
-
4.35
-
V
Ciss
input capacitance
-
656
-
pF
Coss
output capacitance
-
69
-
pF
Crss
reverse transfer capacitance
-
24
-
pF
td(on)
turn-on delay time
-
9
-
ns
tr
rise time
-
11.8
-
ns
td(off)
turn-off delay time
-
19.8
-
ns
tf
fall time
-
4.5
-
ns
0.8
1.2
V
VGS = 0 V; VDS = 30 V; f = 1 MHz;
see Figure 14
VDS = 100 V; RL = 100 Ω; VGS = 10 V;
RG = 5.6 Ω
Source-drain diode
VSD
source-drain voltage
IS = 2.8 A; VGS = 0 V; see Figure 13
-
trr
reverse recovery time
111
-
ns
recovered charge
IS = 3.2 A; dIS/dt = −100 A/µs; VGS = 0 V;
VR = 120 V
-
Qr
-
340
-
nC
PML340SN_1
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 24 August 2006
5 of 12
PML340SN
Philips Semiconductors
N-channel TrenchMOS standard level FET
003aab163
10
10
VGS (V) =
ID
(A)
5
003aab164
800
3.8
4
4.2
4.5
RDSon
(mΩ)
8
600
4.5
6
VGS (V) =
400
4.4
5
10
4
4.2
200
2
4
3.8
0
0
0
1
2
3
4
VDS (V)
0
5
Tj = 25 °C
2
4
6
8 I (A) 10
D
Tj = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6. Drain-source on-state resistance as a function
of drain current; typical values
003aab165
10
ID
(A)
03al52
3
a
8
2
6
4
1
25 °C
Tj = 150 °C
2
0
0
1
2
3
4
VGS (V)
5
Tj = 25 °C and 150 °C; VDS > ID × RDSon
0
-60
60
120
Tj (°C)
180
R DSon
a = ----------------------------R DSon ( 25°C )
Fig 7. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature
PML340SN_1
Product data sheet
0
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 24 August 2006
6 of 12
PML340SN
Philips Semiconductors
N-channel TrenchMOS standard level FET
03aa32
5
03aa35
10−1
ID
(A)
VGS(th)
(V)
4
typ
10−3
min
10−4
3
2
min
10−2
max
typ
max
10−5
1
0
−60
0
60
120
180
Tj (°C)
10−6
0
2
4
6
VGS (V)
Tj = 25 °C; VDS = 5 V
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
003aab166
10
VGS
(V)
44 V
8
VDS
110 V
ID
6
VDS = 176 V
VGS(pl)
4
VGS(th)
VGS
2
QGS1
QGS2
QGS
0
0
4
8
12
QG (nC)
16
QGD
QG(tot)
003aaa508
ID = 2.6 A; VDS = 110 V
Fig 11. Gate-source voltage as a function of gate
charge; typical values
Fig 12. Gate charge waveform definitions
PML340SN_1
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 24 August 2006
7 of 12
PML340SN
Philips Semiconductors
N-channel TrenchMOS standard level FET
003aab167
10
IS
(A)
003aab168
103
Ciss
C
(pF)
8
6
150 °C
102
4
Coss
Tj = 25 °C
2
0
0.2
Crss
0.4
0.6
0.8
VSD (V)
1
Tj = 25 °C and 150 °C; VGS = 0 V
10
10-1
10
VDS (V)
102
VGS = 0 V; f = 1 MHz
Fig 13. Source current as a function of source-drain
voltage; typical values
Fig 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PML340SN_1
Product data sheet
1
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 24 August 2006
8 of 12
PML340SN
Philips Semiconductors
N-channel TrenchMOS standard level FET
7. Package outline
HVSON8: plastic thermal enhanced very thin small outline package; no leads;
8 terminals; body 3.3 × 3.3 × 0.85 mm
SOT873-1
X
B
D
A
E
terminal 1
index area
A
A1
c
detail X
terminal 1
index area
e1
C
v
w
b
e
1
M
M
y
y1 C
C A B
C
4
L1
Eh
L2
8
5
Dh
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
max.
1
A1
b
0.05 0.35
0.00 0.25
c
D
Dh
E
0.2
3.4
3.2
2.3
2.2
3.4
3.2
Eh
e
e1
L1
L2
1.68
0.55 0.52
0.65 1.95
1.58
0.45 0.42
v
w
y
y1
0.1
0.05
0.1
0.1
REFERENCES
OUTLINE
VERSION
IEC
JEDEC
JEITA
SOT873-1
---
---
---
EUROPEAN
PROJECTION
ISSUE DATE
05-06-16
05-06-21
Fig 15. Package outline SOT873-1 (HVSON8)
PML340SN_1
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 24 August 2006
9 of 12
PML340SN
Philips Semiconductors
N-channel TrenchMOS standard level FET
8. Revision history
Table 6.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PML340SN_1
20060824
Product data sheet
-
-
PML340SN_1
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 24 August 2006
10 of 12
PML340SN
Philips Semiconductors
N-channel TrenchMOS standard level FET
9. Legal information
9.1
Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.semiconductors.philips.com.
9.2
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Philips Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Philips Semiconductors
sales office. In case of any inconsistency or conflict with the short data sheet,
the full data sheet shall prevail.
9.3
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, Philips Semiconductors does not give any representations
or warranties, expressed or implied, as to the accuracy or completeness of
such information and shall have no liability for the consequences of use of
such information.
Right to make changes — Philips Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — Philips Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a Philips Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Philips Semiconductors accepts no liability for inclusion and/or use
of Philips Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Philips Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — Philips Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.semiconductors.philips.com/profile/terms, including those
pertaining to warranty, intellectual property rights infringement and limitation
of liability, unless explicitly otherwise agreed to in writing by Philips
Semiconductors. In case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
9.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V.
10. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: [email protected]
PML340SN_1
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 24 August 2006
11 of 12
Philips Semiconductors
PML340SN
N-channel TrenchMOS standard level FET
11. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
9.1
9.2
9.3
9.4
10
11
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Contact information. . . . . . . . . . . . . . . . . . . . . 11
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© Koninklijke Philips Electronics N.V. 2006.
All rights reserved.
For more information, please visit: http://www.semiconductors.philips.com.
For sales office addresses, email to: [email protected]
Date of release: 24 August 2006
Document identifier: PML340SN_1
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