Composite Transistors XN4503 Silicon NPN epitaxial planer transistor Unit: mm For amplification of low frequency output +0.2 2.8 –0.3 +0.25 3 (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO 25 V Rating Collector to emitter voltage of Emitter to base voltage element Collector current VCEO 20 V VEBO 7 V IC 0.5 A Peak collector current ICP 1 A Total power dissipation PT 300 mW Overall Junction temperature Tj 150 ˚C Tstg –55 to +150 ˚C Storage temperature +0.1 +0.1 0 to 0.05 0.4±0.2 ■ Absolute Maximum Ratings 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2) Parameter Collector to base voltage 4 : Collector (Tr2) 5 : Base (Tr1) 6 : Emitter (Tr1) EIAJ : SC–74 Mini Type Package (6–pin) Marking Symbol: 5Y Internal Connection 6 Tr1 1 2 5 4 ■ Electrical Characteristics 1.45±0.1 +0.1 4 0.1 to 0.3 Parameter 0.5 –0.05 2 0.16–0.06 0.95 5 0.95 +0.2 2.9 –0.05 +0.2 1.1–0.1 2SD813 × 2 elements 1.9±0.1 Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. ■ Basic Part Number of Element ● 1 0.8 ● 0.65±0.15 6 ■ Features ● 1.5 –0.05 0.3 –0.05 0.65±0.15 Tr2 3 (Ta=25˚C) Symbol Conditions min typ max Unit VCBO IC = 10µA, IE = 0 25 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 20 V Emitter to base voltage VEBO IE = 10µA, IC = 0 7 V ICBO VCB = 25V, IE = 0 0.1 µA ICEO VCE = 20V, IB = 0 1 µA hFE1 VCE = 2V, IC = 500mA* 65 hFE2 VCE = 2V, IC = 1A* 50 Collector to emitter saturation voltage VCE(sat) IC = 500mA, IB = 20mA* Base to emitter saturation voltage VBE(sat) IC = 500mA, IB = 50mA* Transition frequency fT VCB = 10V, IE = –50mA, f = 200MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz Collector cutoff current Forward current transfer ratio 350 0.2 0.4 V 1.2 V 150 MHz 6 pF * Pulse measurement 1 Composite Transistors XN4503 PT — Ta IC — VCE 500 VCE(sat) — IC 1.2 Ta=25˚C 18mA 16mA 14mA 12mA 10mA 1.0 400 Collector current IC (A) 300 200 100 0.8 8mA 6mA 0.6 4mA 0.4 2mA 0.2 0 0 0 40 80 120 160 0 Ambient temperature Ta (˚C) 0.4 3 25˚C Ta=–25˚C 75˚C 0.3 0.1 0.03 0.3 1 3 10 Collector current IC (A) Collector output capacitance Cob (pF) f=1MHz IE=0 Ta=25˚C 20 16 12 8 4 0 1 2 3 5 10 20 30 50 100 Collector to base voltage VCB (V) 2 3 1 0.3 Ta=75˚C 25˚C 0.1 –25˚C 0.03 0.01 0.01 0.03 2.0 400 Ta=75˚C 25˚C –25˚C 200 100 0 0.01 0.03 0.1 0.3 0.3 1 3 10 fT — I E 500 300 0.1 Collector current IC (A) 240 1 3 Collector current IC (A) Cob — VCB 24 10 VCE=2V Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 10 0.1 30 hFE — IC 30 0.01 0.01 0.03 1.6 600 IC/IB=10 1 1.2 IC/IB=10 Collector to emitter voltage VCE (V) VBE(sat) — IC 100 0.8 Transition frequency fT (MHz) Total power dissipation PT (mW) IB=20mA Collector to emitter saturation voltage VCE(sat) (V) 100 10 200 VCB=10V f=100MHz Ta=25˚C 160 120 80 40 0 –1 –2 –3 –5 –10 –20 –30 –50 –100 Emitter current IE (mA)