IGBT TRENCHSTOPTMPerformancetechnology IGW50N60TP 600VIGBTTRENCHSTOPTMPerformanceseries Datasheet IndustrialPowerControl IGW50N60TP TRENCHSTOPTMPerformanceSeries HighspeedIGBTinTrenchandFieldstoptechnology Features: C TRENCHSTOPTMtechnologyoffering •verylowVCEsat •lowturn-offlosses •shorttailcurrent •lowEMI •maximumjunctiontemperature175°C •qualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •completeproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ G E Applications: •drives •solarinverters •uninterruptiblepowersupplies •converterswithmediumswitchingfrequency G C E KeyPerformanceandPackageParameters Type IGW50N60TP VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package 600V 50A 1.6V 175°C G50DTP PG-TO247-3 2 Rev.2.1,2016-02-05 IGW50N60TP TRENCHSTOPTMPerformanceSeries TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 3 Rev.2.1,2016-02-05 IGW50N60TP TRENCHSTOPTMPerformanceSeries MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collector-emittervoltage,Tvj≥25°C VCE 600 V DCcollectorcurrent,limitedbyTvjmax TC=25°Cvaluelimitedbybondwire TC=100°C IC 80.0 61.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax1) ICpuls 150.0 A Turn off safe operating area VCE≤600V,Tvj≤175°C,tp=1µs1) - 150.0 A Gate-emitter voltage VGE ±20 V Short circuit withstand time VGE=15.0V,VCC≤400V Allowed number of short circuits < 1000 Time between short circuits: ≥ 1.0s Tvj=150°C tSC PowerdissipationTC=25°C PowerdissipationTC=100°C Ptot 319.2 159.6 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C µs 5 Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s °C 260 Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm ThermalResistance Parameter Symbol Conditions Value min. typ. max. - 0.36 0.47 Unit RthCharacteristics IGBT thermal resistance, junction - case 1) Rth(j-c) K/W Defined by design. Not subject to production test. 4 Rev.2.1,2016-02-05 IGW50N60TP TRENCHSTOPTMPerformanceSeries ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. 600 - - V StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA Collector-emitter saturation voltage VCEsat VGE=15.0V,IC=50.0A Tvj=25°C Tvj=175°C - 1.60 1.94 1.80 - V Gate-emitter threshold voltage VGE(th) IC=0.80mA,VCE=VGE 4.1 5.1 5.7 V Zero gate voltage collector current ICES VCE=600V,VGE=0V Tvj=25°C Tvj=175°C - - 40 - µA Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=50.0A - 78.0 - S ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 1950 - - 83 - - 67 - - 249.0 - nC - 13.0 - nH - A DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Internal emitter inductance measured 5mm (0.197 in.) from case LE Short circuit collector current Max. 1000 short circuits IC(SC) Time between short circuits: ≥ 1.0s VCE=25V,VGE=0V,f=1MHz VCC=480V,IC=50.0A, VGE=15V VGE=15.0V,VCC≤400V, tSC≤5µs Tvj=150°C - 255 pF SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 20 - ns - 30 - ns - 215 - ns - 18 - ns - 1.53 - mJ - 0.85 - mJ - 2.38 - mJ IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=25°C, VCC=400V,IC=50.0A, VGE=0.0/15.0V, RG(on)=7.0Ω,RG(off)=7.0Ω, Lσ=32nH,Cσ=60pF Lσ,CσfromFig.E Energy losses include “tail” and diode (IKW50N60DTP) reverse recovery. 5 Rev.2.1,2016-02-05 IGW50N60TP TRENCHSTOPTMPerformanceSeries SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 21 - ns - 34 - ns - 277 - ns - 55 - ns - 2.25 - mJ - 1.39 - mJ - 3.64 - mJ IGBTCharacteristic,atTvj=175°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=175°C, VCC=400V,IC=50.0A, VGE=0.0/15.0V, RG(on)=7.0Ω,RG(off)=7.0Ω, Lσ=32nH,Cσ=60pF Lσ,CσfromFig.E Energy losses include “tail” and diode (IKW50N60DTP) reverse recovery. 6 Rev.2.1,2016-02-05 IGW50N60TP TRENCHSTOPTMPerformanceSeries 350 100 Ptot,POWERDISSIPATION[W] IC,COLLECTORCURRENT[A] 300 DC 10 1 250 200 150 100 0.1 50 0.01 0.1 1 10 100 0 1000 25 VCE,COLLECTOR-EMITTERVOLTAGE[V] 50 75 100 125 150 175 TC,CASETEMPERATURE[°C] Figure 1. Forwardbiassafeoperatingarea (D=0,TC=25°C,Tj≤175°C;VGE=15V) Figure 2. Powerdissipationasafunctionofcase temperature (Tj≤175°C) 100 130 120 VGE=20V 110 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 15V 75 50 25 100 13V 90 11V 80 9V 70 7V 60 50 40 30 20 10 0 25 50 75 100 125 150 0 175 TC,CASETEMPERATURE[°C] 0 1 2 3 4 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 3. Collectorcurrentasafunctionofcase temperature (VGE≥15V,Tj≤175°C) Figure 4. Typicaloutputcharacteristic (Tj=25°C) 7 Rev.2.1,2016-02-05 IGW50N60TP TRENCHSTOPTMPerformanceSeries 130 100 Tj=25°C Tj=175°C 120 VGE=20V 110 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 15V 100 13V 90 11V 80 9V 70 7V 60 50 40 30 75 50 25 20 10 0 0 1 2 3 0 4 0 VCE,COLLECTOR-EMITTERVOLTAGE[V] 2 4 6 8 10 VGE,GATE-EMITTERVOLTAGE[V] Figure 5. Typicaloutputcharacteristic (Tj=175°C) Figure 6. Typicaltransfercharacteristic (VCE=20V) IC=25A IC=50A IC=100A td(off) tf td(on) tr 3.0 100 t,SWITCHINGTIMES[ns] VCE(sat),COLLECTOR-EMITTERSATURATION[V] 3.5 2.5 2.0 10 1.5 1.0 25 50 75 100 125 150 1 175 Tj,JUNCTIONTEMPERATURE[°C] 1 12 23 34 45 56 67 78 89 100 IC,COLLECTORCURRENT[A] Figure 7. Typicalcollector-emittersaturationvoltageas Figure 8. Typicalswitchingtimesasafunctionof afunctionofjunctiontemperature collectorcurrent (VGE=15V) (ind.load,Tj=175°C,VCE=400V,VGE=15/0V, rG=7Ω,testcircuitinFig.E) 8 Rev.2.1,2016-02-05 IGW50N60TP TRENCHSTOPTMPerformanceSeries 1000 t,SWITCHINGTIMES[ns] t,SWITCHINGTIMES[ns] td(off) tf td(on) tr 100 10 0 5 10 15 20 25 30 td(off) tf td(on) tr 100 10 35 25 rG,GATERESISTOR[Ω] Figure 9. Typicalswitchingtimesasafunctionofgate resistor (ind.load,Tj=175°C,VCE=400V,VGE=15/0V, IC=50A,testcircuitinFig.E) 75 100 125 150 175 Figure 10. Typicalswitchingtimesasafunctionof junctiontemperature (ind.load,VCE=400V,VGE=15/0V,IC=50A, rG=7Ω,testcircuitinFig.E) 6.0 11 typ. min. max. Eoff Eon Ets 10 5.0 E,SWITCHINGENERGYLOSSES[mJ] VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] 50 Tj,JUNCTIONTEMPERATURE[°C] 4.0 3.0 2.0 1.0 9 8 7 6 5 4 3 2 1 0.0 25 50 75 100 125 150 0 175 Tj,JUNCTIONTEMPERATURE[°C] 0 10 20 30 40 50 60 70 80 90 100 IC,COLLECTORCURRENT[A] Figure 11. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=0,8mA) 9 Figure 12. Typicalswitchingenergylossesasa functionofcollectorcurrent (ind.load,Tj=175°C,VCE=400V,VGE=15/0V, rG=7Ω,testcircuitinFig.E) Rev.2.1,2016-02-05 IGW50N60TP TRENCHSTOPTMPerformanceSeries 8 4.0 Eoff Eon Ets 3.5 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 7 6 5 4 3 2 1 0 Eoff Eon Ets 3.0 2.5 2.0 1.5 1.0 0.5 0 5 10 15 20 25 30 0.0 35 25 rG,GATERESISTOR[Ω] Figure 13. Typicalswitchingenergylossesasa functionofgateresistor (ind.load,Tj=175°C,VCE=400V,VGE=15/0V, IC=50A,testcircuitinFig.E) 75 100 125 150 175 Figure 14. Typicalswitchingenergylossesasa functionofjunctiontemperature (indload,VCE=400V,VGE=15/0V,IC=50A, rG=7Ω,testcircuitinFig.E) 6.0 16 Eoff Eon Ets 120V 480V 14 5.0 VGE,GATE-EMITTERVOLTAGE[V] E,SWITCHINGENERGYLOSSES[mJ] 50 Tj,JUNCTIONTEMPERATURE[°C] 4.0 3.0 2.0 12 10 8 6 4 1.0 2 0.0 300 350 400 450 500 550 0 600 VCE,COLLECTOR-EMITTERVOLTAGE[V] 0 50 100 150 200 250 QGE,GATECHARGE[nC] Figure 15. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (ind.load,Tj=175°C,VGE=15/0V,IC=50A, rG=7Ω,testcircuitinFig.E) Figure 16. Typicalgatecharge (IC=50A) 10 Rev.2.1,2016-02-05 IGW50N60TP TRENCHSTOPTMPerformanceSeries C,CAPACITANCE[pF] 1000 IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A] 500 Cies Coes Cres 100 10 0 10 20 450 400 350 300 250 200 150 100 50 0 30 12 VCE,COLLECTOR-EMITTERVOLTAGE[V] 13 14 15 16 17 18 19 20 VGE,GATE-EMITTERVOLTAGE[V] Figure 17. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) Figure 18. Typicalshortcircuitcollectorcurrentasa functionofgate-emittervoltage (VCE≤400V,startatTj=150°C) ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W] tSC,SHORTCIRCUITWITHSTANDTIME[µs] 16 14 12 10 8 6 4 2 0.1 D=0.5 0.2 0.1 0.05 0.02 0.01 0.01 single pulse 0.001 i: 1 2 3 4 5 6 ri[K/W]: 0.01216198 0.0542188 0.06849304 0.1687298 0.01315813 1.2E-3 τi[s]: 3.3E-5 2.0E-4 2.3E-3 0.01219856 0.09700046 1.874087 0 10 11 12 13 14 1E-4 1E-6 15 VGE,GATE-EMITTERVOLTAGE[V] 1E-5 1E-4 0.001 0.01 0.1 1 tp,PULSEWIDTH[s] Figure 19. Shortcircuitwithstandtimeasafunctionof gate-emittervoltage (VCE≤400V,startatTj≤150°C) 11 Figure 20. TypicalIGBTtransientthermalimpedance (D=tp/T) Rev.2.1,2016-02-05 IGW50N60TP TRENCHSTOPTMPerformanceSeries Package Drawing PG-TO247-3 12 Rev.2.1,2016-02-05 IGW50N60TP TRENCHSTOPTMPerformanceSeries Testing Conditions VGE(t) I,V 90% VGE t rr = t a + t b Q rr = Q a + Q b dIF/dt a 10% VGE b t Qa IC(t) Qb dI 90% IC 90% IC 10% IC 10% IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 90% VGE Figure D. 10% VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 on = VCE x IC x d t 2% VCE t3 t2 t3 t4 t Figure B. 13 Rev.2.1,2016-02-05 IGW50N60TP TRENCHSTOPTMPerformanceSeries RevisionHistory IGW50N60TP Revision:2016-02-05,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 - Release final datasheet Publishedby InfineonTechnologiesAG 81726München,Germany ©InfineonTechnologiesAG2016. AllRightsReserved. ImportantNotice Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”).Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/orany informationregardingtheapplicationoftheproduct,InfineonTechnologiesherebydisclaimsanyandallwarrantiesand liabilitiesofanykind,includingwithoutlimitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythird party. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseof theproductofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityof customer’stechnicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthe completenessoftheproductinformationgiveninthisdocumentwithrespecttosuchapplication. Forfurtherinformationontheproduct,technology,deliverytermsandconditionsandpricespleasecontactyournearest InfineonTechnologiesoffice(www.infineon.com). PleasenotethatthisproductisnotqualifiedaccordingtotheAECQ100orAECQ101documentsoftheAutomotive ElectronicsCouncil. Warnings Duetotechnicalrequirementsproductsmaycontaindangeroussubstances.Forinformationonthetypesinquestion pleasecontactyournearestInfineonTechnologiesoffice. ExceptasotherwiseexplicitlyapprovedbyInfineonTechnologiesinawrittendocumentsignedbyauthorized representativesofInfineonTechnologies,InfineonTechnologies’productsmaynotbeusedinanyapplicationswherea failureoftheproductoranyconsequencesoftheusethereofcanreasonablybeexpectedtoresultinpersonalinjury. 14 Rev.2.1,2016-02-05