Transistors 2SC0829 (2SC829) Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm 5.0±0.2 4.0±0.2 5.1±0.2 ■ Features 0.7±0.2 • Optimum for RF amplification, oscillation, mixing, and IF stage of FM/AM radios 12.9±0.5 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 30 V Collector-emitter voltage (Base open) VCEO 20 V Emitter-base voltage (Collector open) VEBO 5 V Collector current IC 30 mA Collector power dissipation PC 400 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0.45+0.15 –0.1 0.45+0.15 –0.1 2.5+0.6 –0.2 2.5+0.6 –0.2 1 2 3 2.3±0.2 Parameter 1: Emitter 2: Collector 3: Base TO-92-B1 Package ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 Conditions Min 30 Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 20 V Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 5 V Forward current transfer ratio * hFE VCE = 10 V, IC = 1 mA 70 Transition frequency fT VCB = 10 V, IE = −1 mA, f = 200 MHz 150 Reverse transfer capacitance (Common emitter) Cre VCB = 10 V, IE = −1 mA, f = 10.7 MHz Reverse transfer impedance Zrb VCB = 10 V, IE = −1 mA, f = 2 MHz Typ Max Unit V 250 230 1.3 MHz 1.6 pF 60 Ω Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank B C hFE 70 to 160 110 to 250 Note) The part number in the parenthesis shows conventional part number. Publication date: March 2003 SJC00098CED 1 2SC0829 PC Ta IC VCE Ta = 25°C 200 8 60 µA 6 40 µA 4 100 120 0 160 Ambient temperature Ta (°C) 0 4 Base current IB (µA) 80 60 40 20 0.4 0.8 1.2 Collector-emitter saturation voltage VCE(sat) (V) VCE = 10 V Ta = 25°C 0 1.6 100 25°C 0.01 0.1 10 80 Reverse transfer impedance Zrb (Ω) Transition frequency fT (MHz) −25°C 1 500 400 VCB = 10 V 6V 200 VCE = 10 V Ta = 75°C 25°C 150 −25°C 100 50 0 0.1 100 −10 −100 VCB = 6 V 10 V 10 −1 Emitter current IE (mA) SJC00098CED 10 100 Cre VCE 2.4 40 0 − 0.1 1 Collector current IC (mA) 50 20 2.0 200 100 60 30 1.6 250 f = 2 MHz Ta = 25°C 70 1.2 hFE IC Ta = 75°C 0.1 0.8 300 Zrb IE Emitter current IE (mA) 2 0.4 Collector current IC (mA) Ta = 25°C −1 0 Base-emitter voltage VBE (V) IC / IB = 10 1 fT I E 600 0 − 0.1 0 16 10 Base-emitter voltage VBE (V) 300 12 −25°C 20 VCE(sat) IC 100 0 8 Ta = 75°C Collector-emitter voltage VCE (V) IB VBE 120 30 10 Forward current transfer ratio hFE 80 25°C Reverse transfer capacitance Cre (pF) (Common emitter) 40 40 20 µA 2 0 VCE = 10 V 50 80 µA Collector current IC (mA) 300 60 IB = 100 µA 10 400 0 IC VBE 12 Collector current IC (mA) Collector power dissipation PC (mW) 500 −10 IC = 1 mA f = 10.7 MHz Ta = 25°C 2.0 1.6 1.2 0.8 0.4 0 0.1 1 10 100 Collector-emitter voltage VCE (V) 2SC0829 bie gie IE = −1 mA f = 1 MHz Ta = 25°C 1.4 1.2 1.0 0.8 0.6 0.4 yie = gie + jbie VCE = 10 V 100 10 6 25 10.7 IE = − 0.4 mA −1 mA −2 mA −4 mA −7 mA 4 2 0.2 f = 0.45 MHz 0 0 1 10 100 0 4 100 100 100 −2 mA 58 25 −60 1.0 −4 mA f = 10.7 MHz 58 IE = −7 mA −80 −100 −120 − 0.4 mA −1 mA −1.5 −2 mA −4 mA −2.0 −2.5 −3.0 − 0.5 100 IE = −7 mA − 0.4 − 0.3 − 0.2 − 0.1 0 Reverse transfer conductance gre (mS) 100 10.7 25 58 20 58 −1.0 boe goe Output susceptance boe (mS) −40 − 0.1 mA −20 16 f = 0.45 MHz 10.7 25 1.2 0.45 0.45 10.7 25 −1 mA 100 58 − 0.4 mA 12 Input conductance gie (mS) bfe gfe 0 8 yre = gre + jbre VCE = 10 V − 0.5 58 8 Collector-base voltage VCB (V) Forward transfer susceptance bfe (mS) bre gre 0 Reverse transfer susceptance bre (mS) 12 Input susceptance bie (mS) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 1.6 0.8 58 −7 mA −4 mA −2 mA −1 mA − 0.4 mA 0.6 25 IE = − 0.1 mA 0.4 10.7 0.2 yfe = gfe + jbfe VCE = 10 V 0 0 20 40 60 80 100 Forward transfer conductance gfe (mS) f = 0.45 MHz 0 0.2 0.4 yoe = goe + jboe VCE = 10 V 0.6 0.8 1.0 Output conductance goe (mS) SJC00098CED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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