Ten new high performance MOSFETs for power management High performance MOSFETs for DC-DC converters, OR-ing and load switching NXP’s range of 30V Trench 6 logic level MOSFETs deliver significant improvements in efficiency when used in switching power supply applications, DC-DC converters, POL converters and power OR-ing. The LFPAK package delivers high current capability and low thermal resistance in a 5mm x 6mm Power SO8 footprint making the new range of MOSFETs the natural choice for demanding power-switching applications. Key benefits Low PCB space, low cost } Increased power density whilst maintaining the Power SO8 footprint } High efficiency gains in switching power converters } Faster switching supports higher frequencies and use of smaller inductors & capacitors } Lower in-circuit power dissipation reduces the need for cooling } Uses the PCB as a heatsink and reduces the need for external heatsink Key features } Low ON resistance – RDS(ON) typical from 1.2mOhm (PSMN1R7-30YL) } Low thermal resistance - Rth(jc) from 1.1 °K/W } Low package inductance - typically 1.1nH } Footprint compatible with SO8 (5mm x 6mm) } Low profile - package height 1.1mm } Recommended for switching frequencies up to 1MHz Key applications } Voltage Regulator } Motor Control } OR-ing } Load switching } Li-ion battery protection } LED lighting / dimming Ten new devices have been added to the PSMN 30 V range of MOSFETs from NXP. This range combines the latest silicon technology (Trench 6), with the high-performance LFPAK package, which challenges the best performing devices available in today’s marketplace. 2 Part Leadframe Chip Plastic PCB Trench 6 silicon technology provides our lowest RDS(ON) performance yet, at 1.2mOhm typical at Vgs=10 v (PSMN1R7-30YL). These parts are highly suited to power OR-ing and SYNC-FET in synchronous buck-regulator applications. PCB bra187 Trench 6 technology also delivers low gate-charge (QG) and low gate-resistance (Rg) making the devices suitable for switching frequencies typically up to 1MHz and making them ideally suited for use in high-efficiency synchronous buck regulators. LFPAK (Loss Free PAcKage) delivers compact power in a surface-mount package. It provides superior electrical & thermal resistance as well as low inductance, while maintaining the widely accepted SO8 footprint. LFPAK is compatible with ‘visual inspection’ techniques unlike many other Power-SO8 devices. The combination of Trench 6 silicon and LFPAK package delivers higher operating efficiencies, improved thermal characteristics and high power density which are essential for today’s high performance power management applications. Part Number VDS MAX MAX RDS(on) @ RDS(on) @ VGS = 10 V VGS = 4.5 V V mΩ mΩ PSMN1R7-30YL 30 1.7 2.6 PSMN2R0-30YL 30 2.0 3.2 PSMN2R5-30YL 30 2.4 3.9 PSMN3R0-30YL 30 3.0 4.8 PSMN3R5-30YL 30 3.5 5.6 PSMN4R0-30YL 30 4.0 6.5 PSMN5R0-30YL 30 5.0 8.0 PSMN6R0-30YL 30 6.0 9.7 PSMN7R0-30YL 30 7.0 11.3 PSMN9R0-30YL 30 8.0 13.8 Vin Gate drive IC e.g. ISL6609 VdriveHS D1 CBoot Q1 PSMN7R0-30YL VdriveLS Cin PWM GATE DRIVE IC L1 Vout Cout 0V Q2 PSMN1R7-30YL 0V www.nxp.com 0V 0V bra167 © 2009 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and Date of release: February 2009 reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Document order number : 9397 750 16655 Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in the Netherlands