30 V P-channel MOSFETs for notebook charging and battery packs More power to play for multi-cell battery packs Increasing battery endurance is a critical factor for mobile and portable devices – how long a battery can hold charge, how many charge cycles it can withstand and the recharge time are all key product differentiators. Give your designs more power to play with by using our P-channel TrenchMOS devices to deliver efficient power management and provide battery protection that guarantees safety throughout your product’s lifetime. Key features Ñ 20 and 25 VGS(max) rating Ñ Low gate-charge; faster switching Ñ Low RDS(on) Ñ Multi-cell (3 / 4) battery protection for notebook and portable equipment Ñ SO8 package Key benefits Ñ Simplified gate drive circuit for high voltage inputs Ñ Improved efficiency in battery charger PWM applications Ñ Reduced power dissipation due to lower conduction losses Ñ No need for separate gate protection diode Ñ Increased battery life with safety guaranteed through the lifetime of the product Key applications Ñ Notebook battery charging Ñ Battery management Ñ Load switching Our new 30 V P-channel TrenchMOS PMK3xEP family of enhanced gate technology MOSFETs provide lower RDSon, lower gate charge and faster switching characteristics than comparable MOSFETs for battery switch / adapter switch functions. These MOSFETS handle peak currents within the battery pack of 6 A to 10 A or even greater. Typically two P-channel MOSFETs (Q1, Q2) are found in multi-cell battery packs. Similar to cell phone battery pack operation, one MOSFET enables charging while the other allows discharging. When both MOSFETs are off, the cells are isolated from the external environment providing safety or protecting the battery from harsh conditions. With a maximum gate-source rating of 25 V, the PMK35EP is ideal for notebook battery charging circuits and disconnect applications, where input voltages can reach as high as 22 V. The higher VGS rating also helps reduce component count by eliminating the need for a separate gate protection diode. Housed in the standard SO8 small outline package, samples and full production quantities (2.5 k per reel) of both the PMK30EP and PMK35EP are available. Quick reference data VDS (V) VGS (V) ID (A) RDS(on) (mOhm) Qg (nC) @ 25˚C @ 100˚C @ 10 V @ 4.5 V Qgd (nC) CISS (pF) max. max. max. max. max. max. typ. typ. typ. PMK30EP Single P-channel 30 20 -14.9 -7.5 19 30 50 7 2240 PMK35EP Single P-channel 30 25 -14.9 -7.0 19 35 42 6 2100 Q1 CELL 1 CELL 2 CELL 3 CELL 4 CELL 5 CELL 6 CELL 7 CELL 8 BATTERY PROTECTION CONTROLLER Q2 +V SLA SLC −V bra977 Typically two P-channel MOSFETs (Q1, Q2) are found in multi-cell battery packs www.nxp.com © 2007 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. Date of release: March 2007 The information presented in this document does not form part of any quotation or contract, is believed to be accurate and Document order number: 9397 750 15983 reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Printed in the Netherlands Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.