PD - 94921 IRG4PC30KPbF Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V Combines low conduction losses with high switching speed Latest generation design provides tighter parameter distribution and higher efficiency than previous generations Lead-Free C VCES = 600V VCE(on) typ. = 2.21V G @VGE = 15V, IC = 16A E n-channel Benefits As a Freewheeling Diode we recommend our HEXFREDTM ultrafast, ultrasoft recovery diodes for minimum EMI / Noise and switching losses in the Diode and IGBT Latest generation 4 IGBTs offer highest power density motor controls possible This part replaces the IRGPC30K and IRGPC30M devices TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM tsc VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. Units 600 28 16 58 58 10 ±20 260 100 42 -55 to +150 V A µs V mJ W °C 300 (0.063 in. (1.6mm) from case) 10 lbfin (1.1Nm) Thermal Resistance Parameter RθJC RθCS RθJA Wt www.irf.com Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. Max. 0.24 6 (0.21) 1.2 40 Units °C/W g (oz) 1 12/30/03 IRG4PC30KPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 600 V VGE = 0V, IC = 250µA Emitter-to-Collector Breakdown Voltage 18 V VGE = 0V, IC = 1.0A DV(BR)CES/DTJ Temperature Coeff. of Breakdown Voltage 0.54 V/°C VGE = 0V, IC = 1.0mA 2.21 IC = 14A 2.21 2.7 IC = 16A VGE = 15V VCE(ON) Collector-to-Emitter Saturation Voltage V 2.88 IC = 28A See Fig.2, 5 2.36 IC = 16A , TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 6.0 VCE = VGE, IC = 250µA DV GE(th)/DTJ Temperature Coeff. of Threshold Voltage -12 mV/°C VCE = VGE, IC = 250µA gfe Forward Transconductance 5.4 8.1 S VCE = 100V, IC = 16A 250 VGE = 0V, VCE = 600V V(BR)CES V(BR)ECS ICES Zero Gate Voltage Collector Current IGES Gate-to-Emitter Leakage Current 2.0 1100 ±100 µA nA VGE = 0V, VCE = 10V, TJ = 25°C VGE = 0V, VCE = 600V, TJ = 150°C VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc t d(on) tr td(off) tf Eon Eoff Ets t sc Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time t d(on) tr t d(off) tf Ets Eon Eoff Ets LE Cies Coes Cres Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 10 Typ. Max. Units Conditions 67 100 IC = 16A 11 16 nC VCC = 400V See Fig.8 25 37 VGE = 15V 26 28 TJ = 25°C ns 130 200 IC = 16A, VCC = 480V 120 170 VGE = 15V, RG = 23Ω 0.36 Energy losses include "tail" 0.51 mJ See Fig. 9,10,14 0.87 1.3 µs VCC = 400V, TJ = 125°C VGE = 15V, RG = 23Ω , VCPK < 500V 25 TJ = 150°C, 29 IC = 16A, VCC = 480V ns 190 VGE = 15V, RG = 23Ω 190 Energy losses include "tail" 1.2 mJ See Fig. 11,14 0.26 TJ = 25°C, VGE = 15V, RG = 23Ω 0.36 IC = 14A, VCC = 480V 0.62 Energy losses include "tail" 13 nH Measured 5mm from package 920 VGE = 0V 110 pF VCC = 30V See Fig. 7 27 = 1.0MHz Details of note through are on the last page 2 www.irf.com IRG4PC30KPbF 40 For both: 30 Load Current ( A ) Triangular wave: Duty cycle: 50% TJ = 125°C Tsink = 90°C Gate drive as specified 35 I Clamp voltage: 80% of rated Power Dissipation = 24W 25 Square wave: 20 60% of rated voltage 15 I 10 Ideal diodes 5 A 0 0.1 1 10 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 TJ = 25 o C TJ = 150 o C 10 1 0.1 V GE = 15V 20µs PULSE WIDTH 1 10 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com I C, Collector-to-Emitter Current (A) I C , Collector-to-Emitter Current (A) 100 TJ = 150 oC 10 TJ = 25 oC 1 0.1 V CC = 50V 5µs PULSE WIDTH 5 10 15 VGE , Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 3 IRG4PC30KPbF 4.0 VCE , Collector-to-Emitter Voltage(V) Maximum DC Collector Current(A) 30 25 20 15 10 5 0 25 50 75 100 125 150 VGE = 15V 80 us PULSE WIDTH IC = 32 A 3.0 IC = 16 A 2.0 IC = 8.0A 8A 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 , Junction Temperature ( °C) TT J J, Junction Temperature ( °C ) TC , Case Temperature ( ° C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 PDM 0.10 0.1 0.01 0.00001 0.05 0.02 0.01 t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.0001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PC30KPbF 1500 VGE , Gate-to-Emitter Voltage (V) 1200 C, Capacitance (pF) 20 VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc Cies 900 600 Coes 300 VCC = 400V I C = 16A 16 12 8 4 Cres 0 1 10 0 100 VCE , Collector-to-Emitter Voltage (V) Total Switching Losses (mJ) Total Switching Losses (mJ) 10 V CC = 480V V GE = 15V TJ = 25 ° C I C = 16A 0 10 20 30 40 RG , Gate Resistance (Ohm) Ω Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 40 60 80 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 1.0 0.5 20 QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 1.5 0 50 RG = Ohm 23Ω VGE = 15V VCC = 480V IC = 32 A IC = 16 A 1 IC = 8.0A 8A 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C ) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4PC30KPbF RG TJ VCC 3.2 VGE 100 Ω = 23 Ohm = 150° C = 480V = 15V I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ) 4.0 2.4 1.6 0.8 0.0 0 8 16 24 32 I C , Collector-to-emitter Current (A) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 6 40 VGE = 20V T J = 125 oC 10 1 SAFE OPERATING AREA 1 10 100 1000 VCE , Collector-to-Emitter Voltage (V) Fig. 12 - Turn-Off SOA www.irf.com IRG4PC30KPbF L D.U.T. VC * 50V RL = 0 - 480V 1000V c 480V 4 X I C@25°C 480µF 960V d * Driver same type as D.U.T.; Vc = 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id. Fig. 13a - Clamped Inductive Fig. 13b - Pulsed Collector Load Test Circuit Current Test Circuit IC L Driver* D.U.T. VC Test Circuit 50V 1000V c Fig. 14a - Switching Loss d e * Driver same type as D.U.T., VC = 480V c d 90% e VC 10% 90% Fig. 14b - Switching Loss t d(off) 10% I C 5% Waveforms tf tr t d(on) t=5µs E on E off E ts = (Eon +Eoff ) www.irf.com 7 IRG4PC30KPbF Notes: Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 23Ω, (See fig. 13a) Repetitive rating; pulse width limited by maximum junction temperature. Pulse width ≤ 80µs; duty factor ≤ 0.1%. Pulse width 5.0µs, single shot. TO-247AC Package Outline Dimensions are shown in millimeters (inches) -D- 3.65 (.143) 3.55 (.140) 15.90 (.626) 15.30 (.602) -B- -A- 0.25 (.010) M D B M 2.50 (.089) 1.50 (.059) 4 5.50 (.217) 20.30 (.800) 19.70 (.775) 2X 1 2 5.30 (.209) 4.70 (.185) NOTES: 5.50 (.217) 4.50 (.177) 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-247-AC. 3 -C- 14.80 (.583) 14.20 (.559) 2.40 (.094) 2.00 (.079) 2X 5.45 (.215) 2X 4.30 (.170) 3.70 (.145) 0.80 (.031) 3X 0.40 (.016) 1.40 (.056) 3X 1.00 (.039) 0.25 (.010) M 2.60 (.102) 2.20 (.087) C A S 3.40 (.133) 3.00 (.118) LEAD ASSIGNMENTS Hexfet IGBT 1 -LEAD GateASSIGNMENTS 1 - Gate 1 - GATE2 - Collector 2 - Drain 2 - DRAIN 3 - Source 3 - Emitter 3 - SOURCE 4 - Drain 4 - DRAIN4 - Collector TO-247AC Part Marking Information EXAMPLE: T HIS IS AN IRFPE30 WIT H ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2000 IN THE AS SEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INT ERNATIONAL RECT IFIER LOGO ASSEMBLY LOT CODE PART NUMBER IRFPE30 56 035H 57 DAT E CODE YEAR 0 = 2000 WEEK 35 LINE H Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/03 8 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/