SFH692AT VISHAY Vishay Semiconductors Photodarlington Optocoupler, High BVCEO Voltage Miniflat SOP Package Features • SOP (Small Outline Package) • Isolation Test Voltage, 3750 VRMS (1.0 s) • High Collector-Emitter Breakdown Voltage, VCEO = 300 V • Low Saturation Voltage • Fast Switching Times • Temperature Stable • Low Coupling capacitance • End-Stackable, .100 " (2.54 mm) Spacing A 1 4 C C 2 3 E i179067 Agency Approvals • UL - File No. E52744 Applications High density mounting or space sensitive PCBs PLCs Telecommunication 100 mil lead pitch miniflat package. It features a high current transfer ratio, low coupling capacitance, and high isolation voltage. The coupling devices are designed for signal transmission between two electrically separated circuits. The SFH692AT is available only on tape and reel. Order Information Description Part The SFH692AT has a GaAs infrared emitting diode emitter, which is optically coupled to silicon planar phototransistor detector, and is incorporated in a 4 pin Remarks SFH692AT CTR > 1000 %, SMD For additional order information see Option Section Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the devise. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Emitter Parameter Test condition DC Forward current Reverse voltage Surge Forward current Total power dissipation Document Number 83720 Rev. 5, 25-Jun-03 tp ≤ 10 µs Symbol Value Unit IF 50 mA V VR 6.0 IFSM 2.5 A PDiss 80 mW www.vishay.com 1 SFH692AT VISHAY Vishay Semiconductors Detector Symbol Value Unit Collector-emitter voltage Parameter Test condition VCE 300 V Emitter-collector voltage VEC 0.3 V IC 50 mA IC 150 mA PDiss 200 mW Symbol Value Unit VIO 3750 VRMS Creepage ≥ 5.0 mm Clearance ≥ 5.5 mm Comparative tracking index per DIN IEC 112/VDEO 303, part 1 ≥ 175 Collector current tp ≤ 1.0 ms Total power dissipation Coupler Parameter Test condition Isolation test voltage between emitter and detector, (1.0 s) Isolation resistance VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 Ω VIO = 500 V, Tamb = 100 °C RIO 1011 Ω ≥ Storage temperature range Tstg - 55 to + 150 °C Ambient temperature range Tamb - 55 to + 100 °C Tj 100 °C Tsd 260 °C Junction temperature Soldering temperature (max. 10 s. dip soldering distance to seating plane ≥ 1.5 mm) Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Emitter Typ. Max Forward voltage Parameter IF = 10 mA Test condition VF 1.2 1.5 V Reverse current VR = 6.0 V IR 0.01 10 µA Capacitance VR = 0 V, f = 1.0 MHz Thermal resistance Symbol Min Unit CO 14 pF RthJA 750 K/W Detector Parameter Test condition Collector-emitter leakage current VCE = 200 V Capacitance VCE = 5.0 V, f = 1.0 MHz Thermal resistance www.vishay.com 2 Symbol Min Typ. ICEO Max Unit 200 nA CCE 39 pF RthJA 500 K/W Document Number 83720 Rev. 5, 25-Jun-03 SFH692AT VISHAY Vishay Semiconductors Coupler Parameter Collector-emitter saturation voltage Coupling capacitance Test condition Symbol IF = 1.0 mA, IC = 10 mA VCEsat IF = 10 mA, IC = 100 mA VCEsat f = 1.0 MHz, VI-O = 0 V Min Typ. 0.3 CC Max Unit 1.0 V 1.2 0.6 V pF Current Transfer Ratio Symbol Min Current transfer ratio Parameter IF = 1.0 mA, VCE = 1.0 V Test condition CTR 1000 Typ. Max Unit % Saturated CTR IF = 10 mA, VCE = 1.0 V CTRSAT 500 % Symbol Min Switching Characteristics Parameter Rise time Fall time Turn-on time Turn-off time Test condition IF = 10.0 mA, VCC = 10.0 V, RL = 100 Ω tr IF = 16.0 mA, VCC = 10.0 V, RL = 180 Ω tr IF = 10.0 mA, VCC = 10.0 V, RL = 100 Ω tf IF = 16.0 mA, VCC = 10.0 V, RL = 180 Ω tf IF = 10.0 mA, VCC = 10.0 V, RL=100 Ω ton IF = 16.0 mA, VCC = 10.0 V, RL = 180 Ω ton IF = 10.0 mA, VCC = 10.0 V, RL=100 Ω toff IF = 16.0 mA, VCC = 10.0 V, RL = 180 Ω toff Typ. Max Unit 3.5 µs µs 1.0 14.5 µs 20.5 4.5 µs µs 1.5 29.0 53.5 µs µs µs Typical Characteristics (Tamb = 25 °C unless otherwise specified) VCC = 10.0 V IF RL = 100ı Ω VO isfh692at_01 Figure 1. Linear Operation ( without saturation) Document Number 83720 Rev. 5, 25-Jun-03 www.vishay.com 3 SFH692AT VISHAY Vishay Semiconductors Package Dimensions in Inches (mm) 4 3 0.190 (4.83) 0.170 (4.32) ISO Method A 1 2 Pin one I.D. (on chamfer side of package) 0.184 (4.67) 0.164 (4.17) 0.024 (0.61) 0.034 (0.86) 0.017 (0.43) 0.013 (0.35) 6° i178039 www.vishay.com 4 10° 0.008 (0.20) 0.004 (0.10) 0.080 (2.03) 0.075 (1.91) 0.018 (0.46) 0.014 (0.36) 0.105 (2.67) 0.095 (2.41) 0.220 (5.59) 0.200 (5.08) 40° LEADS COPLANARITY 0.004 (0.10) Max. 0.025 (0.63) 0.015 (0.38) 0.284 (7.21) 0.264 (6.71) Document Number 83720 Rev. 5, 25-Jun-03 SFH692AT VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83720 Rev. 5, 25-Jun-03 www.vishay.com 5