SGB07N120 Data Sheet (438 KB, EN)

SGB07N120
Fast IGBT in NPT-technology
C
• lower Eoff compared to previous generation
• Short circuit withstand time – 10 µs
• Designed for:
- Motor controls
- Inverter
- SMPS
• NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
G
E
PG-TO-263-3-2 (D²-PAK)
1
• Qualified according to JEDEC for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
SGB07N120
VCE
IC
Eoff
Tj
1200V
8A
0.7mJ
150°C
Marking
Package
GB07N120 PG-TO-263-3-2
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCE
1200
V
DC collector current
IC
A
TC = 25°C
16.5
TC = 100°C
7.9
Pulsed collector current, tp limited by Tjmax
ICpul s
27
Turn off safe operating area
-
27
Gate-emitter voltage
VGE
±20
V
Avalanche energy, single pulse
EAS
40
mJ
tSC
10
µs
Ptot
125
W
-55...+150
°C
VCE ≤ 1200V, Tj ≤ 150°C
IC = 8A, VCC = 50V, RGE = 25Ω, start at Tj = 25°C
2
Short circuit withstand time
VGE = 15V, 100V ≤ VCC ≤ 1200V, Tj ≤ 150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Tj , Tstg
Soldering temperature (reflow soldering, MSL1)
Ts
1
2
245
J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2_2
Apr 07
SGB07N120
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
RthJC
1
K/W
RthJA
40
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
1)
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
min.
typ.
max.
1200
-
-
2.5
3.1
3.6
T j =1 5 0° C
-
3.7
4.3
3
4
5
Unit
Static Characteristic
Collector-emitter breakdown voltage
V ( B R ) C E S V G E = 0V , I C = 5 00 µA
Collector-emitter saturation voltage
VCE(sat)
V
V G E = 15 V , I C = 8 A
T j =2 5 °C
Gate-emitter threshold voltage
VGE(th)
I C = 35 0 µA , V C E = V G E
Zero gate voltage collector current
ICES
V C E =1200V,V G E =0V
µA
T j =2 5 °C
-
-
100
T j =1 5 0° C
-
-
400
-
-
100
nA
6
-
S
pF
Gate-emitter leakage current
IGES
V C E =0V,V G E =20V
Transconductance
gfs
V C E = 20 V , I C = 8 A
Input capacitance
Ciss
V C E = 25 V ,
-
720
870
Output capacitance
Coss
V G E = 0V ,
-
60
75
Reverse transfer capacitance
Crss
f= 1 MH z
-
40
50
Gate charge
QGate
V C C = 96 0 V, I C =8 A
-
70
90
nC
-
7
-
nH
-
75
-
A
Dynamic Characteristic
V G E = 15 V
LE
Internal emitter inductance
measured 5mm (0.197 in.) from case
2)
Short circuit collector current
IC(SC)
V G E = 15 V ,t S C ≤ 10 µs
10 0 V≤ V C C ≤ 12 0 0 V,
T j ≤ 1 5 0° C
1)
2
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70µm thick) copper area for
collector connection. PCB is vertical without blown air.
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
2
Rev. 2_2
Apr 07
SGB07N120
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
Value
min.
typ.
max.
-
27
35
-
29
38
-
440
570
-
21
27
-
0.6
0.8
-
0.4
0.55
-
1.0
1.35
Unit
IGBT Characteristic
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
T j =2 5 °C ,
V C C = 80 0 V, I C = 8 A,
V G E = 15 V /0 V ,
R G = 47 Ω,
1)
L σ =1 8 0n H,
1)
C σ = 4 0p F
Energy losses include
“tail” and diode
reverse recovery.
ns
mJ
Switching Characteristic, Inductive Load, at Tj=150 °C
Parameter
Symbol
Conditions
Value
min.
typ.
max.
Unit
IGBT Characteristic
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
1)
T j =1 5 0° C
V C C = 80 0 V,
I C = 8 A,
V G E = 15 V /0 V ,
-
30
36
-
26
31
-
490
590
R G = 47 Ω,
1)
L σ =1 8 0n H,
1)
C σ = 4 0p F
-
30
36
-
1.0
1.2
-
0.7
0.9
-
1.7
2.1
Energy losses include
“tail” and diode
reverse recovery.
ns
mJ
Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E.
Power Semiconductors
3
Rev. 2_2
Apr 07
SGB07N120
35A
Ic
tp=5µs
30A
15µs
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
10A
25A
TC=80°C
20A
15A
TC=110°C
10A
5A
0A
10Hz
Ic
100Hz
50µs
200µs
1A
1ms
DC
0.1A
1kHz
10kHz
1V
100kHz
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj ≤ 150°C, D = 0.5, VCE = 800V,
VGE = +15V/0V, RG = 47Ω)
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25°C, Tj ≤ 150°C)
150W
20A
IC, COLLECTOR CURRENT
Ptot, POWER DISSIPATION
125W
100W
75W
50W
15A
10A
5A
25W
0W
25°C
50°C
75°C
100°C
0A
25°C
125°C
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(Tj ≤ 150°C)
Power Semiconductors
50°C
75°C
100°C
125°C
TC, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(VGE ≤ 15V, Tj ≤ 150°C)
4
Rev. 2_2
Apr 07
25A
25A
20A
20A
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
SGB07N120
VGE=17V
15V
13V
11V
9V
7V
15A
10A
5A
0A
0V
1V
2V
3V
4V
5V
6V
15A
TJ=+150°C
TJ=+25°C
TJ=-40°C
5A
7V
9V
11V
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE
IC, COLLECTOR CURRENT
20A
5V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
(VCE = 20V)
Power Semiconductors
5A
1V
2V
3V
4V
5V
6V
7V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristics
(Tj = 150°C)
25A
0A
3V
10A
0A
0V
7V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
(Tj = 25°C)
10A
15A
VGE=17V
15V
13V
11V
9V
7V
6V
IC=16A
5V
4V
IC=8A
3V
IC=4A
2V
1V
0V
-50°C
0°C
50°C
100°C
150°C
Tj, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(VGE = 15V)
5
Rev. 2_2
Apr 07
SGB07N120
000ns
td(off)
t, SWITCHING TIMES
t, SWITCHING TIMES
td(off)
tf
100ns
td(on)
100ns
tf
td(on)
tr
tr
10ns
0Ω
10ns
0A
5A
10A
15A
20A
IC, COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, RG = 4 7Ω,
dynamic test circuit in Fig.E )
20Ω
40Ω
60Ω
80Ω
100Ω
RG, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, IC = 8A,
dynamic test circuit in Fig.E )
t, SWITCHING TIMES
td(off)
100ns
tr
td(on)
tf
10ns
-50°C
0°C
50°C
100°C
VGE(th), GATE-EMITTER THRESHOLD VOLTAGE
6V
4V
max.
3V
typ.
2V
min.
1V
0V
-50°C
150°C
Tj, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 800V,
VGE = +15V/0V, IC = 8A, RG = 47Ω,
dynamic test circuit in Fig.E )
Power Semiconductors
5V
0°C
50°C
100°C
150°C
Tj, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(IC = 0.3mA)
6
Rev. 2_2
Apr 07
SGB07N120
2.5mJ
E, SWITCHING ENERGY LOSSES
5mJ
4mJ
Ets*
Eon*
3mJ
Eoff
2mJ
1mJ
*) Eon and Ets include losses
due to diode recovery.
E, SWITCHING ENERGY LOSSES
*) Eon and Ets include losses
due to diode recovery.
0mJ
0A
5A
10A
15A
2.0mJ
1.5mJ
Eon*
Eoff
1.0mJ
0.5mJ
0.0mJ
0Ω
20A
IC, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, RG = 4 7Ω,
dynamic test circuit in Fig.E )
Ets*
20Ω
40Ω
60Ω
80Ω
100Ω
RG, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, IC = 8A,
dynamic test circuit in Fig.E )
2.0mJ
Ets*
1.5mJ
Eon*
1.0mJ
Eoff
0.5mJ
0.0mJ
-50°C
0
10 K/W
ZthJC, TRANSIENT THERMAL IMPEDANCE
E, SWITCHING ENERGY LOSSES
*) Eon and Ets include losses
due to diode recovery.
D=0.5
0.2
-1
10 K/W
0.1
0.05
R,(K/W)
0.1020
0.40493
0.26391
0.22904
0.02
-2
10 K/W
0.01
R1
single pulse
0°C
50°C
100°C
-3
10 K/W
1µs
150°C
10µs
100µs
R2
C 1 = τ 1 / R 1 C 2 = τ 2 /R 2
1ms
10ms 100ms
1s
tp, PULSE WIDTH
Tj, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, VCE = 800V,
VGE = +15V/0V, IC = 8A, RG = 47Ω,
dynamic test circuit in Fig.E )
Power Semiconductors
τ, (s)
0.77957
0.21098
0.01247
0.00092
Figure 16. IGBT transient thermal
impedance as a function of pulse width
(D = tp / T)
7
Rev. 2_2
Apr 07
SGB07N120
20V
Ciss
15V
C, CAPACITANCE
VGE, GATE-EMITTER VOLTAGE
1nF
UCE=960V
10V
5V
100pF
Coss
Crss
0V
0nC
20nC
40nC
60nC
QGE, GATE CHARGE
Figure 17. Typical gate charge
(IC = 8A)
80nC
0V
20V
30V
150A
IC(sc), SHORT CIRCUIT COLLECTOR CURRENT
tsc, SHORT CIRCUIT WITHSTAND TIME
30µs
25µs
20µs
15µs
10µs
5µs
0µs
10V
10V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a
function of collector-emitter voltage
(VGE = 0V, f = 1MHz)
11V
12V
13V
14V
50A
0A
10V
15V
VGE, GATE-EMITTER VOLTAGE
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(VCE = 1200V, start at Tj = 25°C)
Power Semiconductors
100A
12V
14V
16V
18V
20V
VGE, GATE-EMITTER VOLTAGE
Figure 20. Typical short circuit collector
current as a function of gate-emitter voltage
(100V ≤ VCE ≤ 1200V, TC = 25°C, Tj ≤ 150°C)
8
Rev. 2_2
Apr 07
SGB07N120
PG-TO263-3-2
Power Semiconductors
9
Rev. 2_2
Apr 07
SGB07N120
i,v
tr r =tS +tF
diF /dt
Qr r =QS +QF
IF
tS
QS
Ir r m
tr r
tF
QF
10% Ir r m
dir r /dt
90% Ir r m
t
VR
Figure C. Definition of diodes
switching characteristics
τ1
τ2
r1
r2
τn
rn
Tj (t)
p(t)
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent
circuit
Figure B. Definition of switching losses
Power Semiconductors
Figure E. Dynamic test circuit
Leakage inductance Lσ =180nH,
and stray capacity Cσ =40pF.
10
Rev. 2_2
Apr 07
SGB07N120
Edition 2006-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 4/27/07.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Power Semiconductors
11
Rev. 2_2
Apr 07