BSC014N06NS Data Sheet (551 KB, EN)

Type
BSC014N06NS
OptiMOSTM Power-Transistor
Features
Product Summary
• Optimized for high performance SMPS, e.g. sync. rec.
• 100% avalanche tested
• Superior thermal resistance
• N-channel
1)
• Qualified according to JEDEC for target applications
VDS
60
V
RDS(on),max
1.45
mW
ID
100
A
QOSS
100
nC
89
nC
QG(0V..10V)
• Pb-free lead plating; RoHS compliant
PG-TDSON-8 FL
• Halogen-free according to IEC61249-2-21
enlarged source interconnection
• Higher solder joint reliability due to enlarged source interconnection
Type
Package
Marking
BSC014N06NS
PG-TDSON-8 FL
014N06NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
V GS=10 V, T C=25 °C
100
V GS=10 V, T C=100 °C
100
V GS=10 V, T C=25 °C,
R thJA =50 K/W 2)
Unit
A
30
Pulsed drain current3)
I D,pulse
T C=25 °C
400
Avalanche energy, single pulse4)
E AS
I D=50 A, R GS=25 W
580
mJ
Gate source voltage
V GS
±20
V
1)
J-STD20 and JESD22
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See figure 3 for more detailed information
4)
See figure 13 for more detailed information
Rev.2.1
page 1
2013-01-29
BSC014N06NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot
Value
T C=25 °C
156
T A=25 °C,
T j, T stg
-55 ... 150
IEC climatic category; DIN IEC 68-1
Parameter
W
2.5
R thJA=50 K/W 2)
Operating and storage temperature
Unit
°C
55/150/56
Values
Symbol Conditions
Unit
min.
typ.
max.
bottom
-
-
0.8
top
-
-
20
6 cm2 cooling area2)
-
-
50
Thermal characteristics
Thermal resistance, junction - case
Device on PCB
R thJC
R thJA
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
60
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=120 µA
2.1
2.8
3.3
Zero gate voltage drain current
I DSS
V DS=60 V, V GS=0 V,
T j=25 °C
-
0.5
1
V DS=60 V, V GS=0 V,
T j=125 °C
-
10
100
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
10
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=50 A
-
1.2
1.45
mW
V GS=6 V, I D=12.5 A
-
1.6
2.2
-
2
3
W
75
150
-
S
Gate resistance
RG
Transconductance
g fs
Rev.2.1
|V DS|>2|I D|R DS(on)max,
I D=50 A
page 2
2013-01-29
BSC014N06NS
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
6500
8125
-
1500
1875
Dynamic characteristics
Input capacitance
C iss
V GS=0 V, V DS=30 V,
f =1 MHz
pF
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
59
118
Turn-on delay time
t d(on)
-
23
-
Rise time
tr
-
10
-
Turn-off delay time
t d(off)
-
43
-
Fall time
tf
-
11
-
Gate to source charge
Q gs
-
28
-
Gate charge at threshold
Q g(th)
-
18
-
Gate to drain charge
Q gd
-
16
21
Switching charge
Q sw
-
26
-
Gate charge total
Qg
-
89
104
Gate plateau voltage
V plateau
-
4.3
-
V
Gate charge total, sync. FET
Q g(sync)
V DS=0.1 V,
V GS=0 to 10 V
-
78
-
nC
Output charge
Q oss
V DD=30 V, V GS=0 V
-
100
-
-
-
100
-
-
400
-
0.8
1.2
V
-
52
83
ns
-
139
-
nC
V DD=30 V, V GS=10 V,
I D=30 A,
R G,ext,ext=2 W
ns
Gate Charge Characteristics5)
V DD=30 V, I D=50 A,
V GS=0 to 10 V
nC
Reverse Diode
Diode continuous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
5)
A
T C=25 °C
V GS=0 V, I F=50 A,
T j=25 °C
V R=30 V, I F=50 A,
di F/dt =100 A/µs
See figure 16 for gate charge parameter definition
Rev.2.1
page 3
2013-01-29
BSC014N06NS
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
180
120
160
100
140
80
100
ID [A]
Ptot [W]
120
80
60
60
40
40
20
20
0
0
0
25
50
75
100
125
150
175
0
25
50
TC [°C]
75
100
125
175
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
limited by on-state
resistance
103
150
100
0.5
1 µs
10 µs
102
0.2
100 µs
10-1
0.1
ZthJC [K/W]
ID [A]
1 ms
10 ms
101
DC
0.05
0.02
0.01
10-2
single pulse
100
10-1
10-3
10-1
100
101
102
VDS [V]
Rev.2.1
10-6
10-5
10-4
10-3
10-2
10-1
100
tp [s]
page 4
2013-01-29
BSC014N06NS
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
400
4
10 V
7V
5V
360
5.5 V
6V
5.5 V
320
3
RDS(on) [mW]
280
ID [A]
240
200
5V
160
2
6V
7V
10 V
120
1
80
40
0
0
0.0
0.5
1.0
1.5
2.0
0
50
100
150
VDS [V]
200
250
300
350
400
ID [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
400
250
360
320
200
280
150
gfs [S]
ID [A]
240
200
160
100
120
80
50
150 °C
40
25 °C
0
0
0
2
4
6
20
40
60
80
100
ID [A]
VGS [V]
Rev.2.1
0
page 5
2013-01-29
BSC014N06NS
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=50 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
3
5
2.5
4
3
VGS(th) [V]
RDS(on) [mW]
2
max
1.5
typ
1200 mA
120 µA
2
1
1
0.5
0
0
-60
-20
20
60
100
140
180
-60
-20
20
Tj [°C]
60
100
140
180
Tj [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
104
103
10000
Ciss
Coss
1000
102
IF [A]
C [pF]
103
25 °C
102
150 °C
101
100
Crss
101
100
10
0
20
40
60
VDS [V]
Rev.2.1
0
0.5
1
1.5
VSD [V]
page 6
2013-01-29
BSC014N06NS
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 W
V GS=f(Q gate); I D=50 A pulsed
parameter: T j(start)
parameter: V DD
100
12
30 V
10
25 °C
12 V
48 V
100 °C
8
VGS [V]
IAV [A]
125 °C
10
6
4
2
1
1
10
100
0
1000
0
20
tAV [µs]
40
60
80
100
Qgate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
70
V GS
Qg
VBR(DSS) [V]
66
62
V gs(th)
58
54
Q g(th)
Q sw
Q gs
50
-60
-20
20
60
100
140
Q gate
Q gd
180
Tj [°C]
Rev.2.1
page 7
2013-01-29
BSC014N06NS
Package Outline
PG-TDSON-8 FL
PG-TDSON-8 FL: Outline
Rev.2.1
page 8
2013-01-29
BSC014N06NS
Package Outline
PG-TDSON-8: Tape
Rev.2.1
page 9
2013-01-29
BSC014N06NS
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2012 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev.2.1
page 10
2013-01-29