BSC019N04LS Data Sheet (1.4 MB, EN)

BSC019N04LS
MOSFET
OptiMOSTMPower-MOSFET,40V
SuperSO8
8
Features
•OptimizedforhighperformanceSMPS,e.g.sync.rec.
•Verylowon-resistanceRDS(on)@VGS=4.5V
•100%avalanchetested
•Superiorthermalresistance
•N-channel
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
Value
Unit
VDS
40
V
RDS(on),max
1.9
mΩ
ID
100
A
QOSS
37
nC
QG(0V..10V)
41
nC
Type/OrderingCode
Package
BSC019N04LS
PG-TDSON-8
1)
5
6
2
Marking
019N04LS
3
6
5
4
1
Table1KeyPerformanceParameters
Parameter
7
3
2
4
7
8
1
S1
8D
S2
7D
S3
6D
G4
5D
RelatedLinks
-
J-STD20 and JESD22
Final Data Sheet
1
Rev.2.1,2016-05-24
OptiMOSTMPower-MOSFET,40V
BSC019N04LS
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2
Rev.2.1,2016-05-24
OptiMOSTMPower-MOSFET,40V
BSC019N04LS
1Maximumratings
atTA=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Values
Unit
Note/TestCondition
100
98
100
82
27
A
VGS=10V,TC=25°C
VGS=10V,TC=100°C
VGS=4.5V,TC=25°C
VGS=4.5V,TC=100°C
VGS=10V,TA=25°C,RthJA=50K/W1)
-
400
A
TC=25°C
-
-
90
mJ
ID=50A,RGS=25Ω
VGS
-20
-
20
V
-
Power dissipation
Ptot
-
-
78
2.5
W
TC=25°C
TA=25°C,RthJA=50K/W1)
Operating and storage temperature
Tj,Tstg
-55
-
150
°C
IEC climatic category;
DIN IEC 68-1: 55/150/56
Unit
Note/TestCondition
Min.
Typ.
Max.
ID
-
-
ID,pulse
-
Avalanche energy, single pulse
EAS
Gate source voltage
Continuous drain current
Pulsed drain current2)
3)
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case,
bottom
Values
Min.
Typ.
Max.
RthJC
-
1.0
1.6
K/W
-
Thermal resistance, junction - case,
top
RthJC
-
-
20
K/W
-
Device on PCB,
6 cm2 cooling area1)
RthJA
-
-
50
K/W
-
1)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
See Diagram 3 for more detailed information
3)
See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.2.1,2016-05-24
OptiMOSTMPower-MOSFET,40V
BSC019N04LS
3Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=1mA
-
2
V
VDS=VGS,ID=250µA
-
0.1
10
1
100
µA
VDS=40V,VGS=0V,Tj=25°C
VDS=40V,VGS=0V,Tj=125°C
IGSS
-
10
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
1.5
1.9
1.9
2.7
mΩ
VGS=10V,ID=50A
VGS=4.5V,ID=50A
Gate resistance1)
RG
-
0.8
1.6
Ω
-
Transconductance
gfs
95
190
-
S
|VDS|>2|ID|RDS(on)max,ID=50A
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
40
-
Gate threshold voltage
VGS(th)
1.2
Zero gate voltage drain current
IDSS
Gate-source leakage current
Table5Dynamiccharacteristics
Parameter
Symbol
Values
Min.
Typ.
Max.
Ciss
-
2900
4060
pF
VGS=0V,VDS=20V,f=1MHz
Coss
-
840
1180
pF
VGS=0V,VDS=20V,f=1MHz
Reverse transfer capacitance
Crss
-
68
136
pF
VGS=0V,VDS=20V,f=1MHz
Turn-on delay time
td(on)
-
6
-
ns
VDD=20V,VGS=10V,ID=50A,
RG,ext=1.6Ω
Rise time
tr
-
4
-
ns
VDD=20V,VGS=10V,ID=50A,
RG,ext=1.6Ω
Turn-off delay time
td(off)
-
26
-
ns
VDD=20V,VGS=10V,ID=50A,
RG,ext=1.6Ω
Fall time
tf
-
4
-
ns
VDD=20V,VGS=10V,ID=50A,
RG,ext=1.6Ω
Unit
Note/TestCondition
Input capacitance1)
1)
Output capacitance
1)
Table6Gatechargecharacteristics2)
Parameter
Symbol
Gate to source charge
Gate charge at threshold
Values
Min.
Typ.
Max.
Qgs
-
7.6
-
nC
VDD=20V,ID=50A,VGS=0to10V
Qg(th)
-
6.2
-
nC
VDD=20V,ID=50A,VGS=0to10V
Gate to drain charge
Qgd
-
6.7
9.4
nC
VDD=20V,ID=50A,VGS=0to10V
Switching charge
Qsw
-
8.1
-
nC
VDD=20V,ID=50A,VGS=0to10V
Gate charge total
Qg
-
41
57
nC
VDD=20V,ID=50A,VGS=0to10V
Gate plateau voltage
Vplateau
-
2.6
-
V
VDD=20V,ID=50A,VGS=0to10V
Gate charge total
Qg
-
21
29
nC
VDD=20V,ID=50A,VGS=0to4.5V
Gate charge total, sync. FET
Qg(sync)
-
16
-
nC
VDS=0.1V,VGS=0to4.5V
Qoss
-
37
52
nC
VDD=20V,VGS=0V
1)
1)
1)
1)
Output charge
1)
2)
Defined by design. Not subject to production test
See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
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Rev.2.1,2016-05-24
OptiMOSTMPower-MOSFET,40V
BSC019N04LS
Table7Reversediode
Parameter
Symbol
Diode continuous forward current
Diode pulse current
Values
Unit
Note/TestCondition
78
A
TC=25°C
-
400
A
TC=25°C
-
0.84
1
V
VGS=0V,IF=50A,Tj=25°C
trr
-
70
140
ns
VR=20V,IF=50A,diF/dt=400A/µs
Qrr
-
27
-
nC
VR=20V,IF=50A,diF/dt=400A/µs
Min.
Typ.
Max.
IS
-
-
IS,pulse
-
VSD
Reverse recovery time
Reverse recovery charge
Diode forward voltage
1)
1)
Defined by design. Not subject to production test
Final Data Sheet
5
Rev.2.1,2016-05-24
OptiMOSTMPower-MOSFET,40V
BSC019N04LS
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Draincurrent
90
120
80
100
70
80
50
ID[A]
Ptot[W]
60
40
30
60
40
20
20
10
0
0
40
80
120
0
160
0
40
80
TC[°C]
120
160
TC[°C]
Ptot=f(TC)
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
3
101
10
1 µs
10 µs
102
100
100 µs
101
0.2
ZthJC[K/W]
ID[A]
1 ms
0.5
10 ms
DC
0.1
0.05
10-1
0.02
0.01
single pulse
0
10
10-1
10-1
10
100
101
102
-2
10-3
10-6
10-5
10-4
VDS[V]
10-2
10-1
100
tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp
Final Data Sheet
10-3
ZthJC=f(tp);parameter:D=tp/T
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OptiMOSTMPower-MOSFET,40V
BSC019N04LS
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.drain-sourceonresistance
400
5
10 V
350
4V
300
3V
3.5 V
3.2 V
5V
200
RDS(on)[mΩ]
250
ID[A]
2.8 V
4
4.5 V
3.2 V
150
3
3.5 V
4V
4.5 V
2
5V
10 V
3V
100
1
2.8 V
50
0
0
1
0
2
0
50
100
150
VDS[V]
200
250
300
350
400
ID[A]
ID=f(VDS);Tj=25°C;parameter:VGS
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
Diagram8:Typ.forwardtransconductance
400
300
250
320
200
ID[A]
gfs[S]
240
150
160
100
80
150 °C
0
0
1
50
25 °C
2
3
4
5
0
0
VGS[V]
40
60
80
100
ID[A]
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Final Data Sheet
20
gfs=f(ID);Tj=25°C
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Rev.2.1,2016-05-24
OptiMOSTMPower-MOSFET,40V
BSC019N04LS
Diagram9:Drain-sourceon-stateresistance
Diagram10:Typ.gatethresholdvoltage
4
2.5
2.0
3
RDS(on)[mΩ]
1.5
VGS(th)[V]
max
2
typ
250 µA
1.0
1
0.5
0
-60
-20
20
60
100
140
0.0
-60
180
-20
20
Tj[°C]
60
100
140
180
Tj[°C]
RDS(on)=f(Tj);ID=50A;VGS=10V
VGS(th)=f(Tj);VGS=VDS;ID=250µA
Diagram11:Typ.capacitances
Diagram12:Forwardcharacteristicsofreversediode
4
103
10
25 °C
150 °C
25°C,max
150°C,max
Ciss
Coss
102
Crss
102
IF[A]
C[pF]
103
101
0
10
20
101
30
40
100
0.0
VDS[V]
1.0
1.5
VSD[V]
C=f(VDS);VGS=0V;f=1MHz
Final Data Sheet
0.5
IF=f(VSD);parameter:Tj
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Rev.2.1,2016-05-24
OptiMOSTMPower-MOSFET,40V
BSC019N04LS
Diagram13:Avalanchecharacteristics
Diagram14:Typ.gatecharge
2
10
12
20 V
10
8V
32 V
25 °C
8
VGS[V]
IAV[A]
100 °C
1
10
125 °C
6
4
2
100
100
101
102
103
0
0
10
tAV[µs]
20
30
40
50
Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
VGS=f(Qgate);ID=50Apulsed;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Gate charge waveforms
46
44
42
VBR(DSS)[V]
40
38
36
34
32
30
-60
-20
20
60
100
140
180
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA
Final Data Sheet
9
Rev.2.1,2016-05-24
OptiMOSTMPower-MOSFET,40V
BSC019N04LS
5PackageOutlines
Figure1OutlinePG-TDSON-8,dimensionsinmm
Final Data Sheet
10
Rev.2.1,2016-05-24
OptiMOSTMPower-MOSFET,40V
BSC019N04LS
Dimension in mm
Figure2OutlineTape(TDSON-8)
Final Data Sheet
11
Rev.2.1,2016-05-24
OptiMOSTMPower-MOSFET,40V
BSC019N04LS
Figure3OutlineFootprint(TDSON-8)
Final Data Sheet
12
Rev.2.1,2016-05-24
OptiMOSTMPower-MOSFET,40V
BSC019N04LS
RevisionHistory
BSC019N04LS
Revision:2016-05-24,Rev.2.1
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.1
2016-05-24
Update footnotes and insert max values
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respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
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Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
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failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
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Final Data Sheet
13
Rev.2.1,2016-05-24
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