BSC039N06NS Data Sheet (558 KB, EN)

Type
BSC039N06NS
OptiMOSTM Power-Transistor
Features
Product Summary
• Optimized for high performance SMPS, e.g. sync. rec.
• 100% avalanche tested
• Superior thermal resistance
• N-channel
1)
• Qualified according to JEDEC for target applications
VDS
60
V
RDS(on),max
3.9
mW
ID
100
A
QOSS
32
nC
QG(0V..10V)
27
nC
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
PG-TDSON-8
Type
Package
Marking
BSC039N06NS
PG-TDSON-8
039N06NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
V GS=10 V, T C=25 °C
100
V GS=10 V, T C=100 °C
65
V GS=10 V, T C=25 °C,
R thJA =50K/W 2)
19
Unit
A
Pulsed drain current3)
I D,pulse
T C=25 °C
400
Avalanche energy, single pulse4)
E AS
I D=50 A, R GS=25 W
50
mJ
Gate source voltage
V GS
±20
V
1)
J-STD20 and JESD22
Device on 40 x 40 x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
2)
3)
See figure 3 for more detailed information
4)
See figure 13 for more detailed information
Rev.2.1
page 1
2012-12-07
BSC039N06NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot
Value
T C=25 °C
69
T A=25 °C,
T j, T stg
-55 ... 150
IEC climatic category; DIN IEC 68-1
Parameter
W
2.5
R thJA=50 K/W 2)
Operating and storage temperature
Unit
°C
55/150/56
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
1.8
top
-
-
20
6 cm2 cooling area2)
-
-
50
Thermal characteristics
Thermal resistance, junction - case
Device on PCB
R thJC
R thJA
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
60
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=36 µA
2.1
2.8
3.3
Zero gate voltage drain current
I DSS
V DS=60 V, V GS=0 V,
T j=25 °C
-
0.5
1
V DS=60 V, V GS=0 V,
T j=125 °C
-
10
100
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
10
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=50 A
-
3.3
3.9
mW
V GS=6 V, I D=12.5 A
-
4.8
5.9
-
1.6
2.4
W
42
85
-
S
Gate resistance
RG
Transconductance
g fs
Rev.2.1
|V DS|>2|I D|R DS(on)max,
I D=50 A
page 2
2012-12-07
BSC039N06NS
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
2000
2500
-
490
613
Dynamic characteristics
Input capacitance
C iss
V GS=0 V, V DS=30 V,
f =1 MHz
pF
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
22
44
Turn-on delay time
t d(on)
-
12
-
Rise time
tr
-
12
-
Turn-off delay time
t d(off)
-
20
-
Fall time
tf
-
7
-
Gate to source charge
Q gs
-
9
-
Gate charge at threshold
Q g(th)
-
5
-
Gate to drain charge
Q gd
-
5
7
Switching charge
Q sw
-
9
-
Gate charge total
Qg
-
27
32
Gate plateau voltage
V plateau
-
4.8
-
V
Gate charge total, sync. FET
Q g(sync)
V DS=0.1 V,
V GS=0 to 10 V
-
24
-
nC
Output charge
Q oss
V DD=30 V, V GS=0 V
-
32
-
-
-
100
-
-
400
-
0.9
1.2
V
-
32
51
ns
-
28
-
nC
V DD=30 V, V GS=10 V,
I D=50 A, R G,ext=3 W
ns
Gate Charge Characteristics5)
V DD=30 V, I D=50 A,
V GS=0 to 10 V
nC
Reverse Diode
Diode continuous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
5)
A
T C=25 °C
V GS=0 V, I F=50 A,
T j=25 °C
V R=30 V, I F=50 A,
di F/dt =100 A/µs
See figure 16 for gate charge parameter definition
Rev.2.1
page 3
2012-12-07
BSC039N06NS
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
80
120
100
60
ID [A]
Ptot [W]
80
40
60
40
20
20
0
0
0
25
50
75
100
125
150
175
0
25
50
TC [°C]
75
100
125
150
175
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
10
103
limited by on-state
resistance
1 µs
10 µs
102
1
0.5
101
ZthJC [K/W]
ID [A]
100 µs
1 ms
10 ms
0.2
0.1
DC
0.05
0.1
0.02
100
0.01
single pulse
10-1
10-1
100
101
102
VDS [V]
Rev.2.1
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
tp [s]
page 4
2012-12-07
BSC039N06NS
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
400
8
5V
360
5.5 V
6V
7
7V
10 V
320
6
7V
280
RDS(on) [mW]
ID [A]
240
200
6V
160
120
5.5 V
5
4
10 V
3
2
80
5V
1
40
0
0
0.0
0.5
1.0
1.5
2.0
0
50
100
150
VDS [V]
200
250
300
350
400
ID [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
400
120
360
320
280
80
gfs [S]
ID [A]
240
200
160
40
120
80
40
150 °C
25 °C
0
0
0
2
4
6
8
VGS [V]
Rev.2.1
0
20
40
60
80
100
ID [A]
page 5
2012-12-07
BSC039N06NS
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=50 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
7
5
6.5
6
4
5.5
5
max
3
4
3.5
VGS(th) [V]
RDS(on) [mW]
4.5
typ
3
360 mA
36 µA
2
2.5
2
1.5
1
1
0.5
0
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
Tj [°C]
Tj [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
104
103
10000
Ciss
102
IF [A]
1000
C [pF]
103
Coss
25 °C
102
101
Crss
100
10
0
20
40
60
VDS [V]
Rev.2.1
150 °C
101
100
0
0.5
1
1.5
2
VSD [V]
page 6
2012-12-07
BSC039N06NS
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 W
V GS=f(Q gate); I D=50 A pulsed
parameter: T j(start)
parameter: V DD
100
12
30 V
10
12 V
10
125 °C
25 °C
8
VGS [V]
IAV [A]
100 °C
48 V
1
6
4
2
0.1
1
10
100
0
1000
0
10
tAV [µs]
20
30
Qgate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
70
V GS
Qg
VBR(DSS) [V]
66
62
V gs(th)
58
54
Q g(th)
Q sw
Q gs
50
-60
-20
20
60
100
140
Q gate
Q gd
180
Tj [°C]
Rev.2.1
page 7
2012-12-07
BSC039N06NS
PG-TDSON-8 (SuperSO8)
Rev.2.1
page 8
2012-12-07
BSC039N06NS
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2011 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev.2.1
page 9
2012-12-07
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