BSC097N06NS Data Sheet (483 KB, EN)

Type
BSC097N06NS
OptiMOSTM Power-Transistor
Features
Product Summary
• Optimized for high performance SMPS, e.g. sync. rec.
• 100% avalanche tested
VDS
60
9.7
RDS(on),max
• Superior thermal resistance
• N-channel
1)
• Qualified according to JEDEC for target applications
V
mW
ID
46
A
QOSS
14
nC
QG(0V..10V)
12
nC
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
PG-TDSON-8
Type
Package
Marking
BSC097N06NS
PG-TDSON-8
097N06NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
V GS=10 V, T C=25 °C
46
V GS=10 V, T C=100 °C
29
V GS=10 V, T C=25 °C,
R thJA =50K/W 2)
12
Unit
A
Pulsed drain current3)
I D,pulse
T C=25 °C
184
Avalanche energy, single pulse4)
E AS
I D=30 A, R GS=25 W
13
mJ
Gate source voltage
V GS
±20
V
1)
J-STD20 and JESD22
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
3)
See figure 3 for more detailed information
4)
See figure 13 for more detailed information
Rev.2.0
page 1
2013-10-17
BSC097N06NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot
Value
T C=25 °C
36
T A=25 °C,
T j, T stg
-55 ... 150
IEC climatic category; DIN IEC 68-1
Parameter
W
2.5
R thJA=50 K/W 2)
Operating and storage temperature
Unit
°C
55/150/56
Values
Symbol Conditions
Unit
min.
typ.
max.
bottom
-
-
3.5
top
-
-
20
6 cm2 cooling area2)
-
-
50
Thermal characteristics
Thermal resistance, junction - case
Device on PCB
R thJC
R thJA
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
60
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=14 µA
2.1
2.8
3.3
Zero gate voltage drain current
I DSS
V DS=60 V, V GS=0 V,
T j=25 °C
-
0.1
1
V DS=60 V, V GS=0 V,
T j=125 °C
-
10
100
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
10
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=40 A
-
8.0
9.7
mW
V GS=6 V, I D=10 A
-
12.0
14.6
-
1.1
1.7
W
24
48
-
S
Gate resistance
RG
Transconductance
g fs
Rev.2.0
|V DS|>2|I D|R DS(on)max,
I D=40 A
page 2
2013-10-17
BSC097N06NS
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
860
1075
-
210
263
Dynamic characteristics
Input capacitance
C iss
V GS=0 V, V DS=30 V,
f =1 MHz
pF
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
16
32
Turn-on delay time
t d(on)
-
6
-
Rise time
tr
-
2
-
Turn-off delay time
t d(off)
-
10
-
Fall time
tf
-
2
-
Gate to source charge
Q gs
-
4.5
-
Gate charge at threshold
Q g(th)
-
2.4
-
Gate to drain charge
Q gd
-
2.6
3.7
Switching charge
Q sw
-
4.7
-
Gate charge total
Qg
-
12
15
Gate plateau voltage
V plateau
-
5.2
-
V
Gate charge total, sync. FET
Q g(sync)
V DS=0.1 V,
V GS=0 to 10 V
-
10
-
nC
Output charge
Q oss
V DD=30 V, V GS=0 V
-
14
-
-
-
30
-
-
184
-
1.0
1.2
V
-
33
53
ns
-
30
-
nC
V DD=30 V, V GS=10 V,
I D=40 A,
R G,ext,ext=1.6 W
ns
Gate Charge Characteristics5)
V DD=30 V, I D=40 A,
V GS=0 to 10 V
nC
Reverse Diode
Diode continuous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
5)
A
T C=25 °C
V GS=0 V, I F=30 A,
T j=25 °C
V R=30 V, I F=30 A,
di F/dt =100 A/µs
See figure 16 for gate charge parameter definition
Rev.2.0
page 3
2013-10-17
BSC097N06NS
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
40
60
ID [A]
Ptot [W]
40
20
20
0
0
0
25
50
75
100
125
150
175
0
25
50
TC [°C]
75
100
125
150
175
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
10
103
limited by on-state
resistance
102
0.5
1 µs
1
ZthJC [K/W]
ID [A]
10 µs
100 µs
101
0.1
0.05
0.02
1 ms
0.1
10 ms
10-1
10-1
100
101
102
VDS [V]
Rev.2.0
0.01
single pulse
DC
100
0.2
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
tp [s]
page 4
2013-10-17
BSC097N06NS
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
180
20
5V
150
5.5 V
16
6V
10 V
ID [A]
RDS(on) [mW]
7V
120
90
6V
7V
12
10 V
8
60
5.5 V
4
30
5V
0
0
0.0
0.5
1.0
1.5
2.0
0
30
60
VDS [V]
90
120
150
180
ID [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
180
80
150
60
gfs [S]
ID [A]
120
90
40
60
20
30
150 °C
25 °C
0
0
0
2
4
6
8
VGS [V]
Rev.2.0
0
20
40
60
80
ID [A]
page 5
2013-10-17
BSC097N06NS
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=40 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
20
5
18
16
4
12
3
max
VGS(th) [V]
RDS(on) [mW]
14
10
typ
8
140 mA
14 µA
2
6
4
1
2
0
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
Tj [°C]
Tj [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
104
103
103
10000
102
1000
IF [A]
C [pF]
Ciss
Coss
102
101
100
25 °C
150 °C
101
Crss
100
10
0
20
40
60
VDS [V]
Rev.2.0
0
0.5
1
1.5
2
VSD [V]
page 6
2013-10-17
BSC097N06NS
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 W
V GS=f(Q gate); I D=40 A pulsed
parameter: T j(start)
parameter: V DD
100
12
30 V
10
12 V
48 V
10
125 °C
100 °C
VGS [V]
IAV [A]
8
25 °C
1
6
4
2
0.1
1
10
100
0
1000
0
5
tAV [µs]
10
15
Qgate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
70
V GS
Qg
VBR(DSS) [V]
66
62
V gs(th)
58
54
Q g(th)
Q sw
Q gs
50
-60
-20
20
60
100
140
Q gate
Q gd
180
Tj [°C]
Rev.2.0
page 7
2013-10-17
BSC097N06NS
Package Outline
PG-TDSON-8
PG-TDSON-8: Outline
Rev.2.0
page 8
2013-10-17
BSC097N06NS
Package Footprint
PG-TDSON-8
PG-TDSON-8: Footprint
Rev.2.0
page 9
2013-10-17
BSC097N06NS
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev.2.0
page 10
2013-10-17
Similar pages