Type BSC097N06NS OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested VDS 60 9.7 RDS(on),max • Superior thermal resistance • N-channel 1) • Qualified according to JEDEC for target applications V mW ID 46 A QOSS 14 nC QG(0V..10V) 12 nC • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 PG-TDSON-8 Type Package Marking BSC097N06NS PG-TDSON-8 097N06NS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value V GS=10 V, T C=25 °C 46 V GS=10 V, T C=100 °C 29 V GS=10 V, T C=25 °C, R thJA =50K/W 2) 12 Unit A Pulsed drain current3) I D,pulse T C=25 °C 184 Avalanche energy, single pulse4) E AS I D=30 A, R GS=25 W 13 mJ Gate source voltage V GS ±20 V 1) J-STD20 and JESD22 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) 3) See figure 3 for more detailed information 4) See figure 13 for more detailed information Rev.2.0 page 1 2013-10-17 BSC097N06NS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Power dissipation P tot Value T C=25 °C 36 T A=25 °C, T j, T stg -55 ... 150 IEC climatic category; DIN IEC 68-1 Parameter W 2.5 R thJA=50 K/W 2) Operating and storage temperature Unit °C 55/150/56 Values Symbol Conditions Unit min. typ. max. bottom - - 3.5 top - - 20 6 cm2 cooling area2) - - 50 Thermal characteristics Thermal resistance, junction - case Device on PCB R thJC R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 60 - - Gate threshold voltage V GS(th) V DS=V GS, I D=14 µA 2.1 2.8 3.3 Zero gate voltage drain current I DSS V DS=60 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=60 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=40 A - 8.0 9.7 mW V GS=6 V, I D=10 A - 12.0 14.6 - 1.1 1.7 W 24 48 - S Gate resistance RG Transconductance g fs Rev.2.0 |V DS|>2|I D|R DS(on)max, I D=40 A page 2 2013-10-17 BSC097N06NS Parameter Values Symbol Conditions Unit min. typ. max. - 860 1075 - 210 263 Dynamic characteristics Input capacitance C iss V GS=0 V, V DS=30 V, f =1 MHz pF Output capacitance C oss Reverse transfer capacitance Crss - 16 32 Turn-on delay time t d(on) - 6 - Rise time tr - 2 - Turn-off delay time t d(off) - 10 - Fall time tf - 2 - Gate to source charge Q gs - 4.5 - Gate charge at threshold Q g(th) - 2.4 - Gate to drain charge Q gd - 2.6 3.7 Switching charge Q sw - 4.7 - Gate charge total Qg - 12 15 Gate plateau voltage V plateau - 5.2 - V Gate charge total, sync. FET Q g(sync) V DS=0.1 V, V GS=0 to 10 V - 10 - nC Output charge Q oss V DD=30 V, V GS=0 V - 14 - - - 30 - - 184 - 1.0 1.2 V - 33 53 ns - 30 - nC V DD=30 V, V GS=10 V, I D=40 A, R G,ext,ext=1.6 W ns Gate Charge Characteristics5) V DD=30 V, I D=40 A, V GS=0 to 10 V nC Reverse Diode Diode continuous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 5) A T C=25 °C V GS=0 V, I F=30 A, T j=25 °C V R=30 V, I F=30 A, di F/dt =100 A/µs See figure 16 for gate charge parameter definition Rev.2.0 page 3 2013-10-17 BSC097N06NS 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 40 60 ID [A] Ptot [W] 40 20 20 0 0 0 25 50 75 100 125 150 175 0 25 50 TC [°C] 75 100 125 150 175 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 10 103 limited by on-state resistance 102 0.5 1 µs 1 ZthJC [K/W] ID [A] 10 µs 100 µs 101 0.1 0.05 0.02 1 ms 0.1 10 ms 10-1 10-1 100 101 102 VDS [V] Rev.2.0 0.01 single pulse DC 100 0.2 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 tp [s] page 4 2013-10-17 BSC097N06NS 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 180 20 5V 150 5.5 V 16 6V 10 V ID [A] RDS(on) [mW] 7V 120 90 6V 7V 12 10 V 8 60 5.5 V 4 30 5V 0 0 0.0 0.5 1.0 1.5 2.0 0 30 60 VDS [V] 90 120 150 180 ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 180 80 150 60 gfs [S] ID [A] 120 90 40 60 20 30 150 °C 25 °C 0 0 0 2 4 6 8 VGS [V] Rev.2.0 0 20 40 60 80 ID [A] page 5 2013-10-17 BSC097N06NS 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=40 A; V GS=10 V V GS(th)=f(T j); V GS=V DS 20 5 18 16 4 12 3 max VGS(th) [V] RDS(on) [mW] 14 10 typ 8 140 mA 14 µA 2 6 4 1 2 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 Tj [°C] Tj [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 103 103 10000 102 1000 IF [A] C [pF] Ciss Coss 102 101 100 25 °C 150 °C 101 Crss 100 10 0 20 40 60 VDS [V] Rev.2.0 0 0.5 1 1.5 2 VSD [V] page 6 2013-10-17 BSC097N06NS 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=40 A pulsed parameter: T j(start) parameter: V DD 100 12 30 V 10 12 V 48 V 10 125 °C 100 °C VGS [V] IAV [A] 8 25 °C 1 6 4 2 0.1 1 10 100 0 1000 0 5 tAV [µs] 10 15 Qgate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 70 V GS Qg VBR(DSS) [V] 66 62 V gs(th) 58 54 Q g(th) Q sw Q gs 50 -60 -20 20 60 100 140 Q gate Q gd 180 Tj [°C] Rev.2.0 page 7 2013-10-17 BSC097N06NS Package Outline PG-TDSON-8 PG-TDSON-8: Outline Rev.2.0 page 8 2013-10-17 BSC097N06NS Package Footprint PG-TDSON-8 PG-TDSON-8: Footprint Rev.2.0 page 9 2013-10-17 BSC097N06NS Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.2.0 page 10 2013-10-17