BSZ028N04LS Data Sheet (1.4 MB, EN)

BSZ028N04LS
MOSFET
OptiMOSTMPower-MOSFET,40V
TSDSON-8FL
(enlarged source interconnection)
Features
•OptimizedforhighperformanceSMPS,e.g.sync.rec.
•Verylowon-resistanceRDS(on)@VGS=4.5V
•100%avalanchetested
•Superiorthermalresistance
•N-channel
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
•Highersolderjointreliabilitywithenlargedsourceinterconnection
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
40
V
RDS(on),max
2.8
mΩ
ID
40
A
QOSS
28
nC
QG(0V..10V)
32
nC
S1
8D
S2
7D
S3
6D
G4
5D
Type/OrderingCode
Package
Marking
RelatedLinks
BSZ028N04LS
PG-TSDSON-8 FL
028N04L
-
1)
J-STD20 and JESD22
Final Data Sheet
1
Rev.2.1,2016-06-09
OptiMOSTMPower-MOSFET,40V
BSZ028N04LS
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.2.1,2016-06-09
OptiMOSTMPower-MOSFET,40V
BSZ028N04LS
1Maximumratings
atTA=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Values
Unit
Note/TestCondition
40
40
40
40
21
A
VGS=10V,TC=25°C
VGS=10V,TC=100°C
VGS=4.5V,TC=25°C
VGS=4.5V,TC=100°C
VGS=10V,TA=25°C,RthJA=60K/W1)
-
160
A
TC=25°C
-
-
100
mJ
ID=20A,RGS=25Ω
VGS
-20
-
20
V
-
Power dissipation
Ptot
-
-
63
2.1
W
TC=25°C
TA=25°C,RthJA=60K/W1)
Operating and storage temperature
Tj,Tstg
-55
-
150
°C
IEC climatic category;
DIN IEC 68-1: 55/150/56
Unit
Note/TestCondition
Min.
Typ.
Max.
ID
-
-
ID,pulse
-
Avalanche energy, single pulse
EAS
Gate source voltage
Continuous drain current
Pulsed drain current2)
3)
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case
Device on PCB,
6 cm2 cooling area1)
Values
Min.
Typ.
Max.
RthJC
-
1.2
2
K/W
-
RthJA
-
-
60
K/W
-
1)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
See Diagram 3 for more detailed information
3)
See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.2.1,2016-06-09
OptiMOSTMPower-MOSFET,40V
BSZ028N04LS
3Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=1mA
-
2
V
VGS=4.5V,TC=100°C
-
0.1
10
1
100
µA
VDS=40V,VGS=0V,Tj=25°C
VDS=40V,VGS=0V,Tj=125°C
IGSS
-
10
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
2.2
2.7
2.8
3.8
mΩ
VGS=10V,ID=20A
VGS=4.5V,ID=20A
Gate resistance1)
RG
-
0.9
1.8
Ω
-
Transconductance
gfs
50
100
-
S
|VDS|>2|ID|RDS(on)max,ID=20A
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
40
-
Gate threshold voltage
VGS(th)
1.2
Zero gate voltage drain current
IDSS
Gate-source leakage current
Table5Dynamiccharacteristics
Parameter
Symbol
Values
Min.
Typ.
Max.
Ciss
-
2300
3220
pF
VGS=0V,VDS=20V,f=1MHz
Coss
-
640
900
pF
VGS=0V,VDS=20V,f=1MHz
Reverse transfer capacitance
Crss
-
52
104
pF
VGS=0V,VDS=20V,f=1MHz
Turn-on delay time
td(on)
-
5
-
ns
VDD=20V,VGS=10V,ID=20A,
RG,ext=1.6Ω
Rise time
tr
-
4
-
ns
VDD=20V,VGS=10V,ID=20A,
RG,ext=1.6Ω
Turn-off delay time
td(off)
-
37
-
ns
VDD=20V,VGS=10V,ID=20A,
RG,ext=1.6Ω
Fall time
tf
-
4
-
ns
VDD=20V,VGS=10V,ID=20A,
RG,ext=1.6Ω
Unit
Note/TestCondition
Input capacitance1)
1)
Output capacitance
1)
Table6Gatechargecharacteristics2)
Parameter
Symbol
Gate to source charge
Gate charge at threshold
Values
Min.
Typ.
Max.
Qgs
-
5.5
-
nC
VDD=20V,ID=20A,VGS=0to10V
Qg(th)
-
3.6
-
nC
VDD=20V,ID=20A,VGS=0to10V
Gate to drain charge
Qgd
-
5.1
7.1
nC
VDD=20V,ID=20A,VGS=0to10V
Switching charge
Qsw
-
6.9
-
nC
VDD=20V,ID=20A,VGS=0to10V
Gate charge total
Qg
-
32
45
nC
VDD=20V,ID=20A,VGS=0to10V
Gate plateau voltage
Vplateau
-
2.4
-
V
VDD=20V,ID=20A,VGS=0to10V
Gate charge total
Qg
-
16
22
nC
VDD=20V,ID=20A,VGS=0to4.5V
Gate charge total, sync. FET
Qg(sync)
-
13
-
nC
VDS=0.1V,VGS=0to4.5V
Qoss
-
28
39
nC
VDD=20V,VGS=0V
1)
1)
1)
1)
Output charge
1)
2)
Defined by design. Not subject to production test
See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.2.1,2016-06-09
OptiMOSTMPower-MOSFET,40V
BSZ028N04LS
Table7Reversediode
Parameter
Symbol
Diode continuous forward current
Diode pulse current
Values
Unit
Note/TestCondition
40
A
TC=25°C
-
160
A
TC=25°C
-
0.81
1
V
VGS=0V,IF=20A,Tj=25°C
trr
-
24
48
ns
VR=20V,IF=20A,diF/dt=400A/µs
Qrr
-
57
-
nC
VR=20V,IF=20A,diF/dt=400A/µs
Min.
Typ.
Max.
IS
-
-
IS,pulse
-
VSD
Reverse recovery time
Reverse recovery charge
Diode forward voltage
1)
1)
Defined by design. Not subject to production test
Final Data Sheet
5
Rev.2.1,2016-06-09
OptiMOSTMPower-MOSFET,40V
BSZ028N04LS
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Draincurrent
70
50
60
40
30
40
ID[A]
Ptot[W]
50
30
20
20
10
10
0
0
40
80
120
0
160
0
40
80
TC[°C]
120
160
TC[°C]
Ptot=f(TC)
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
3
101
10
102
10 µs
1 µs
0.5
100
0.2
100 µs
ZthJC[K/W]
ID[A]
0.1
1 ms
101
10 ms
DC
0.05
10-1
0.02
0.01
single pulse
100
10-1
10-1
10-2
100
101
102
10-3
10-6
10-5
10-4
VDS[V]
10-2
10-1
100
tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp
Final Data Sheet
10-3
ZthJC=f(tp);parameter:D=tp/T
6
Rev.2.1,2016-06-09
OptiMOSTMPower-MOSFET,40V
BSZ028N04LS
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.drain-sourceonresistance
160
7
5V
10 V
140
4V
6
4.5 V
3.5 V
2.8 V
3.2 V
3V
3.2 V
120
5
100
RDS(on)[mΩ]
ID[A]
3V
80
60
4
3.5 V
4V
3
4.5 V
5V
2.8 V
40
1
20
0
10 V
2
0.0
0.2
0.4
0.6
0.8
0
1.0
0
40
VDS[V]
80
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
Diagram8:Typ.forwardtransconductance
160
160
120
120
gfs[S]
ID[A]
ID=f(VDS);Tj=25°C;parameter:VGS
80
40
160
30
40
80
40
25 °C
150 °C
0
120
ID[A]
0
1
2
3
4
0
0
VGS[V]
20
ID[A]
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Final Data Sheet
10
gfs=f(ID);Tj=25°C
7
Rev.2.1,2016-06-09
OptiMOSTMPower-MOSFET,40V
BSZ028N04LS
Diagram9:Drain-sourceon-stateresistance
Diagram10:Typ.gatethresholdvoltage
6
2.5
5
2.0
4
3
VGS(th)[V]
RDS(on)[mΩ]
1.5
max
typ
1.0
2
0.5
1
0
-60
-20
20
60
100
140
0.0
-60
180
-20
20
Tj[°C]
60
100
140
180
Tj[°C]
RDS(on)=f(Tj);ID=20A;VGS=10V
VGS(th)=f(Tj);VGS=VDS;ID=250µA
Diagram11:Typ.capacitances
Diagram12:Forwardcharacteristicsofreversediode
4
103
10
25 °C
150 °C
25 °C, max
150°C, max
Ciss
103
102
IF[A]
C[pF]
Coss
102
101
101
Crss
0
10
20
30
40
100
0.0
VDS[V]
1.0
1.5
VSD[V]
C=f(VDS);VGS=0V;f=1MHz
Final Data Sheet
0.5
IF=f(VSD);parameter:Tj
8
Rev.2.1,2016-06-09
OptiMOSTMPower-MOSFET,40V
BSZ028N04LS
Diagram13:Avalanchecharacteristics
Diagram14:Typ.gatecharge
2
10
12
20 V
10
8V
32 V
25 °C
101
VGS[V]
IAV[A]
8
100 °C
6
125 °C
4
2
100
100
101
102
103
0
0
tAV[µs]
10
20
30
40
Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
VGS=f(Qgate);ID=20Apulsed;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Gate charge waveforms
46
44
42
VBR(DSS)[V]
40
38
36
34
32
30
-60
-20
20
60
100
140
180
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA
Final Data Sheet
9
Rev.2.1,2016-06-09
OptiMOSTMPower-MOSFET,40V
BSZ028N04LS
5PackageOutlines
Figure1OutlinePG-TSDSON-8FL,dimensionsinmm/inches
Final Data Sheet
10
Rev.2.1,2016-06-09
OptiMOSTMPower-MOSFET,40V
BSZ028N04LS
RevisionHistory
BSZ028N04LS
Revision:2016-06-09,Rev.2.1
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.1
2016-06-09
Insert max values and update footnotes
TrademarksofInfineonTechnologiesAG
AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™,
EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™,
ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™,
PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™,
SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™.
TrademarksupdatedAugust2015
OtherTrademarks
Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.
WeListentoYourComments
Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously
improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to:
[email protected]
Publishedby
InfineonTechnologiesAG
81726München,Germany
©2016InfineonTechnologiesAG
AllRightsReserved.
LegalDisclaimer
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With
respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout
limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
Information
Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
TechnologiesOffice(www.infineon.com).
Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
Final Data Sheet
11
Rev.2.1,2016-06-09
Similar pages