BSZ042N06NS Data Sheet (1.6 MB, EN)

MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSTMPower-Transistor,60V
BSZ042N06NS
DataSheet
Rev.2.3
Final
PowerManagement&Multimarket
OptiMOSTMPower-Transistor,60V
BSZ042N06NS
1Description
TSDSON-8FL
(enlarged source interconnection)
Features
•OptimizedforhighperformanceSMPS,e.g.sync.rec.
•100%avalanchetested
•Superiorthermalresistance
•N-channel
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
•Highersolderjointreliabilityduetoenlargedsourceinterconnection
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
60
V
RDS(on),max
4.2
mΩ
ID
40
A
QOSS
32
nC
QG(0V..10V)
27
nC
S1
8D
S2
7D
S3
6D
G4
5D
Type/OrderingCode
Package
Marking
RelatedLinks
BSZ042N06NS
PG-TSDSON-8 FL
042N06N
-
1)
J-STD20 and JESD22
Final Data Sheet
2
Rev.2.3,2014-11-10
OptiMOSTMPower-Transistor,60V
BSZ042N06NS
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Final Data Sheet
3
Rev.2.3,2014-11-10
OptiMOSTMPower-Transistor,60V
BSZ042N06NS
2Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current
Values
Unit
Note/TestCondition
40
40
17
A
VGS=10V,TC=25°C
VGS=10V,TC=100°C
VGS=10V,TC=25°C,RthJA=60K/W1)
-
160
A
TC=25°C
-
-
130
mJ
ID=20A,RGS=25Ω
VGS
-20
-
20
V
-
Power dissipation
Ptot
-
-
69
2.1
W
TC=25°C
TA=25°C,RthJA=60K/W1)
Operating and storage temperature
Tj,Tstg
-55
-
150
°C
IEC climatic category;
DIN IEC 68-1: 55/150/56
Unit
Note/TestCondition
Min.
Typ.
Max.
ID
-
-
ID,pulse
-
Avalanche energy, single pulse
EAS
Gate source voltage
Pulsed drain current2)
3)
3Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case,
bottom
Device on PCB,
6 cm2 cooling area1)
Values
Min.
Typ.
Max.
RthJC
-
1.1
1.8
K/W
-
RthJA
-
-
60
K/W
-
1)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
See figure 3 for more detailed information
3)
See figure 13 for more detailed information
Final Data Sheet
4
Rev.2.3,2014-11-10
OptiMOSTMPower-Transistor,60V
BSZ042N06NS
4Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=1mA
2.8
3.3
V
VDS=VGS,ID=36µA
-
0.5
10
1
100
µA
VDS=60V,VGS=0V,Tj=25°C
VDS=60V,VGS=0V,Tj=125°C
IGSS
-
10
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
3.4
4.9
4.2
6.3
mΩ
VGS=10V,ID=20A
VGS=6V,ID=5A
Gate resistance1)
RG
-
1.6
2.4
Ω
-
Transconductance
gfs
27
54
-
S
|VDS|>2|ID|RDS(on)max,ID=20A
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
60
-
Gate threshold voltage
VGS(th)
2.1
Zero gate voltage drain current
IDSS
Gate-source leakage current
Table5Dynamiccharacteristics1)
Parameter
Symbol
Input capacitance
Values
Min.
Typ.
Max.
Ciss
-
2000
2500
pF
VGS=0V,VDS=30V,f=1MHz
Output capacitance
Coss
-
490
612.5
pF
VGS=0V,VDS=30V,f=1MHz
Reverse transfer capacitance
Crss
-
22
44
pF
VGS=0V,VDS=30V,f=1MHz
Turn-on delay time
td(on)
-
10
-
ns
VDD=30V,VGS=10V,ID=20A,
RG,ext,ext=1.7Ω
Rise time
tr
-
7
-
ns
VDD=30V,VGS=10V,ID=20A,
RG,ext,ext=1.7Ω
Turn-off delay time
td(off)
-
19
-
ns
VDD=30V,VGS=10V,ID=20A,
RG,ext,ext=1.7Ω
Fall time
tf
-
6
-
ns
VDD=30V,VGS=10V,ID=20A,
RG,ext,ext=1.7Ω
1)
Defined by design. Not subject to production test.
Final Data Sheet
5
Rev.2.3,2014-11-10
OptiMOSTMPower-Transistor,60V
BSZ042N06NS
Table6Gatechargecharacteristics1)
Parameter
Symbol
Gate to source charge
Gate charge at threshold
Values
Unit
Note/TestCondition
-
nC
VDD=30V,ID=20A,VGS=0to10V
5
-
nC
VDD=30V,ID=20A,VGS=0to10V
-
5
7
nC
VDD=30V,ID=20A,VGS=0to10V
Qsw
-
8
-
nC
VDD=30V,ID=20A,VGS=0to10V
Gate charge total
Qg
-
27
32
nC
VDD=30V,ID=20A,VGS=0to10V
Gate plateau voltage
Vplateau
-
4.4
-
V
VDD=30V,ID=20A,VGS=0to10V
Gate charge total, sync. FET
Qg(sync)
-
24
-
nC
VDS=0.1V,VGS=0to10V
Qoss
-
32
40
nC
VDD=30V,VGS=0V
Unit
Note/TestCondition
Min.
Typ.
Max.
Qgs
-
9
Qg(th)
-
Gate to drain charge
Qgd
Switching charge
2)
2)
2)
Output charge
Table7Reversediode
Parameter
Symbol
Diode continuous forward current
Diode pulse current
Diode forward voltage
2)
Reverse recovery time
2)
Reverse recovery charge
1)
2)
Values
Min.
Typ.
Max.
IS
-
-
40
A
TC=25°C
IS,pulse
-
-
160
A
TC=25°C
VSD
-
0.9
1.2
V
VGS=0V,IF=20A,Tj=25°C
trr
-
33
53
ns
VR=30V,IF=20A,diF/dt=100A/µs
Qrr
-
33
-
nC
VR=30V,IF=20A,diF/dt=100A/µs
See ″Gate charge waveforms″ for parameter definition
Defined by design. Not subject to production test.
Final Data Sheet
6
Rev.2.3,2014-11-10
OptiMOSTMPower-Transistor,60V
BSZ042N06NS
5Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Draincurrent
80
50
40
60
ID[A]
Ptot[W]
30
40
20
20
10
0
0
25
50
75
100
125
150
0
175
0
25
50
75
TC[°C]
100
125
150
175
TC[°C]
Ptot=f(TC)
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
3
101
10
102
100
1 µs
0.5
10 µs
ZthJC[K/W]
0.2
ID[A]
100 µs
1
10
1 ms
10 ms
DC
0.1
10
-1
0.05
0.02
0.01
single pulse
100
10-1
10-1
10-2
100
101
102
10-3
10-6
10-5
VDS[V]
10-3
10-2
10-1
tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp
Final Data Sheet
10-4
ZthJC=f(tp);parameter:D=tp/T
7
Rev.2.3,2014-11-10
OptiMOSTMPower-Transistor,60V
BSZ042N06NS
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.drain-sourceonresistance
160
12
10 V 7 V
5V
5.5 V
6V
140
10
120
RDS(on)[mΩ]
ID[A]
8
5.5 V
100
80
60
5V
6V
6
7V
4
10 V
40
2
20
0
0.0
0.5
1.0
1.5
0
2.0
0
40
80
VDS[V]
120
160
ID[A]
ID=f(VDS);Tj=25°C;parameter:VGS
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
Diagram8:Typ.forwardtransconductance
160
120
140
100
120
80
gfs[S]
ID[A]
100
80
60
60
40
40
20
20
0
150 °C
0
2
25 °C
4
6
0
0
VGS[V]
40
60
80
100
ID[A]
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Final Data Sheet
20
gfs=f(ID);Tj=25°C
8
Rev.2.3,2014-11-10
OptiMOSTMPower-Transistor,60V
BSZ042N06NS
Diagram9:Drain-sourceon-stateresistance
Diagram10:Typ.gatethresholdvoltage
8
5
7
4
6
max
3
VGS(th)[V]
RDS(on)[mΩ]
5
4
typ
3
360 µA
36 µA
2
2
1
1
0
-60
-20
20
60
100
140
0
-60
180
-20
20
Tj[°C]
60
100
140
180
Tj[°C]
RDS(on)=f(Tj);ID=20A;VGS=10V
VGS(th)=f(Tj);VGS=VDS
Diagram11:Typ.capacitances
Diagram12:Forwardcharacteristicsofreversediode
4
103
10
25 °C
150 °C
Ciss
3
102
IF[A]
C[pF]
10
Coss
102
101
Crss
101
0
20
40
60
100
0.0
0.5
VDS[V]
C=f(VDS);VGS=0V;f=1MHz
Final Data Sheet
1.0
1.5
2.0
VSD[V]
IF=f(VSD);parameter:Tj
9
Rev.2.3,2014-11-10
OptiMOSTMPower-Transistor,60V
BSZ042N06NS
Diagram13:Avalanchecharacteristics
Diagram14:Typ.gatecharge
102
12
30 V
10
12 V
101
100 °C
25 °C
8
IAV[A]
VGS[V]
125 °C
48 V
100
6
4
2
10-1
100
101
102
103
0
0
tAV[µs]
10
20
30
Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
VGS=f(Qgate);ID=20Apulsed;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Gate charge waveforms
70
66
VBR(DSS)[V]
62
58
54
50
-60
-20
20
60
100
140
180
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA
Final Data Sheet
10
Rev.2.3,2014-11-10
OptiMOSTMPower-Transistor,60V
BSZ042N06NS
6PackageOutlines
Figure1OutlinePG-TSDSON-8FL,dimensionsinmm/inches
Final Data Sheet
11
Rev.2.3,2014-11-10
OptiMOSTMPower-Transistor,60V
BSZ042N06NS
RevisionHistory
BSZ042N06NS
Revision:2014-11-10,Rev.2.3
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.3
2014-11-10
Rev.2.3
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©2014InfineonTechnologiesAG
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LegalDisclaimer
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With
respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout
limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
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Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
Final Data Sheet
12
Rev.2.3,2014-11-10
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