MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTMPower-Transistor,60V IPA029N06N DataSheet Rev.2.2 Final PowerManagement&Multimarket OptiMOSTMPower-Transistor,60V IPA029N06N 1Description TO-220-FP Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 60 V RDS(on),max 2.9 mΩ ID 84 A QOSS 65 nC QG(0V..10V) 56 nC Drain Pin 2 Gate Pin 1 Source Pin 3 Type/OrderingCode Package Marking RelatedLinks IPA029N06N PG-TO220-FP 029N06N - 1) J-STD20 and JESD22 Final Data Sheet 2 Rev.2.2,2015-04-09 OptiMOSTMPower-Transistor,60V IPA029N06N TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 3 Rev.2.2,2015-04-09 OptiMOSTMPower-Transistor,60V IPA029N06N 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 84 59 A VGS=10V,TC=25°C VGS=10V,TC=100°C - 336 A TC=25°C - - 140 mJ ID=84A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 38 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 Unit Note/TestCondition K/W - Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche energy, single pulse EAS Gate source voltage Pulsed drain current1) 2) 3Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case RthJC Values Min. Typ. Max. - 2.9 3.9 4Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Min. Typ. Max. V(BR)DSS 60 - - V VGS=0V,ID=1mA Gate threshold voltage VGS(th) 2.1 2.8 3.3 V VDS=VGS,ID=75µA Zero gate voltage drain current IDSS - 0.1 10 1 100 µA VDS=60V,VGS=0V,Tj=25°C VDS=60V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 2.6 3.0 2.9 3.5 mΩ VGS=10V,ID=84A VGS=6V,ID=21A Gate resistance3) RG 0.65 1.3 1.95 Ω - Transconductance gfs 75 150 - S |VDS|>2|ID|RDS(on)max,ID=84A 1) See figure 3 for more detailed information See figure 13 for more detailed information 3) Defined by design. Not subject to production test 2) Final Data Sheet 4 Rev.2.2,2015-04-09 OptiMOSTMPower-Transistor,60V IPA029N06N Table5Dynamiccharacteristics1) Parameter Symbol Input capacitance Values Unit Note/TestCondition 5125 pF VGS=0V,VDS=30V,f=1MHz 980 1225 pF VGS=0V,VDS=30V,f=1MHz - 39 78 pF VGS=0V,VDS=30V,f=1MHz td(on) - 16 - ns VDD=30V,VGS=10V,ID=84A, RG,ext=3Ω Rise time tr - 15 - ns VDD=30V,VGS=10V,ID=84A, RG,ext=3Ω Turn-off delay time td(off) - 30 - ns VDD=30V,VGS=10V,ID=84A, RG,ext=3Ω Fall time tf - 11 - ns VDD=30V,VGS=10V,ID=84A, RG,ext=3Ω Unit Note/TestCondition Min. Typ. Max. Ciss - 4100 Output capacitance Coss - Reverse transfer capacitance Crss Turn-on delay time Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Gate charge at threshold Values Min. Typ. Max. Qgs - 19 - nC VDD=30V,ID=84A,VGS=0to10V Qg(th) - 11 - nC VDD=30V,ID=84A,VGS=0to10V Gate to drain charge Qgd - 10 15 nC VDD=30V,ID=84A,VGS=0to10V Switching charge Qsw - 18 - nC VDD=30V,ID=84A,VGS=0to10V Gate charge total Qg - 56 66 nC VDD=30V,ID=84A,VGS=0to10V Gate plateau voltage Vplateau - 4.7 - V VDD=30V,ID=84A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 49 - nC VDS=0.1V,VGS=0to10V Qoss - 65 82 nC VDD=30V,VGS=0V Unit Note/TestCondition 1) 1) Output charge Table7Reversediode Parameter Symbol Diode continuous forward current Diode pulse current Diode forward voltage 1) Reverse recovery time 1) Reverse recovery charge 1) 2) Values Min. Typ. Max. IS - - 32 A TC=25°C IS,pulse - - 336 A TC=25°C VSD - 0.85 1.2 V VGS=0V,IF=32A,Tj=25°C trr - 36 58 ns VR=30V,IF=32A,diF/dt=100A/µs Qrr - 31 - nC VR=30V,IF=32A,diF/dt=100A/µs Defined by design. Not subject to production test See ″Gate charge waveforms″ for parameter definition Final Data Sheet 5 Rev.2.2,2015-04-09 OptiMOSTMPower-Transistor,60V IPA029N06N 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 100 40 80 30 60 ID[A] Ptot[W] 50 20 40 10 20 0 0 25 50 75 100 125 150 175 0 200 0 25 50 75 TC[°C] 100 125 150 175 200 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 1 µs 10 µs 102 0.5 100 ZthJC[K/W] ID[A] 100 µs 1 ms 101 10 ms 0.1 0.05 0.02 10-1 DC 0.2 0.01 100 10-1 10-1 single pulse 100 101 102 10-2 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.2,2015-04-09 OptiMOSTMPower-Transistor,60V IPA029N06N Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 320 8 10 V 7V 6V 280 7 240 6 200 5 5.5 V RDS(on)[mΩ] ID[A] 5V 160 120 5.5 V 4 6V 7V 3 5V 10 V 80 2 40 1 0 0.0 0.5 1.0 1.5 0 2.0 0 40 80 120 VDS[V] 160 200 240 280 320 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 280 160 240 120 200 ID[A] gfs[S] 160 120 80 40 175 °C 40 0 80 25 °C 0 2 4 6 8 0 0 VGS[V] 40 60 80 100 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 20 gfs=f(ID);Tj=25°C 7 Rev.2.2,2015-04-09 OptiMOSTMPower-Transistor,60V IPA029N06N Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 6 5 5 4 4 3 3 VGS(th)[V] RDS(on)[mΩ] max typ 750 µA 75 µA 2 2 1 1 0 -60 -20 20 60 100 140 0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=84A;VGS=10V VGS(th)=f(Tj);VGS=VDS Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 175 °C Ciss 103 102 IF[A] C[pF] Coss 102 101 Crss 101 0 20 40 60 100 0.0 VDS[V] 1.0 1.5 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.5 IF=f(VSD);parameter:Tj 8 Rev.2.2,2015-04-09 OptiMOSTMPower-Transistor,60V IPA029N06N Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 102 12 30 V 10 12 V 25 °C 48 V 100 °C 8 VGS[V] IAV[A] 150 °C 101 6 4 2 100 100 101 102 103 0 0 10 tAV[µs] 20 30 40 50 60 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=84Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Gate charge waveforms 70 66 VBR(DSS)[V] 62 58 54 50 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.2,2015-04-09 OptiMOSTMPower-Transistor,60V IPA029N06N 6PackageOutlines Figure1OutlinePG-TO220-FP,dimensionsinmm/inches Final Data Sheet 10 Rev.2.2,2015-04-09 OptiMOSTMPower-Transistor,60V IPA029N06N RevisionHistory IPA029N06N Revision:2015-04-09,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2014-06-19 Release of Final Version 2.2 2015-04-09 Rev.2.1 WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Publishedby InfineonTechnologiesAG 81726München,Germany ©2015InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.2,2015-04-09