VISHAY TSKS5400S

TSKS5400S
Vishay Semiconductors
GaAs Infrared Emitting Diode in Side View Package
Description
TSKS5400S is a standard GaAs infrared emitting
diode in a flat sideview, molded plastic package. A
small recessed spherical lens provides an improved
radiant intensity in a low profile package.
The device diode is package compatible to
TEKT5400S, phototransistor and to TEKS5400
photodetector, allowing the user to assemble his own
optical sensor.
14 354
Features
Side view package with spherical lens
Radiation direction perpendicular to mounting
direction
Angle of half sensitivity ϕ = ± 30°
Peak wavelength λP = 950 nm
Package compatible to TEKT5400S
Order Instruction
Ordering Code
Remarks
TSKS5400S
2000 pcs in Plastic Bags
TSKS5400S–ASZ
2.54 mm Pin distance (lead to lead), height of taping 16 mm
Absolute Maximum Ratings
Tamb = 25°C
Parameter
Symbol
Value
Unit
Reverse voltage
VR
6
V
Forward current
IF
100
mA
Surge forward current
Test Conditions
tp 100 µs
IFSM
2
A
Power dissipation
PV
170
mW
Junction temperature
Tj
100
°C
Operating temperature range
Tstg
–25...+85
°C
Storage temperature range
Tstg
–40...+100
°C
Tsd
260
°C
RthJA
450
k/W
Soldering temperature
Thermal resistance junction/ ambient
Document Number 81074
Rev. 1, 30–Apr–02
t 5 s, 2 mm from body
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TSKS5400S
Vishay Semiconductors
Basic Characteristics
Tamb = 25°C
Parameter
Forward voltage
Reverse voltage
Junction capacitance
Radiant intensity
Radiant power
Temp. coefficient of φe
Angle of half sensitivity
Peak wavelength
Spectral bandwidth
Rise time
Fall time
Test Conditions
IF = 100 mA, tp 20 ms
IR = 10 µA
VR =0 V, f = 1 MHz, E = 0
IF = 50 mA, tp 20 ms
IF = 50 mA, tp 20 ms
IF = 50 mA
Symbol
VF
VVR
Cj
Ie
φe
TKφe
ϕ
λp
∆λ
tr
tf
IF = 50 mA
IF = 50 mA
IF = 1 A, tp/T = 0.01, tp 10 µs
IF = 1 A, tp/T = 0.01, tp 10 µs
Min.
Typ.
1.3
Max.
1.7
6
50
2
7
10
–1.0
±30
950
50
400
450
Unit
V
V
pF
mW/ sr
mW
%K
°
nm
nm
ns
ns
Typical Characteristics (Tamb = 25C, unless otherwise specified)
104
IF – Forward Current ( mA )
P V – Power Dissipation ( mW )
200
150
RthJA
100
50
103
102
101
100
0
10–1
0
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20
40
60
80
Tamb – Ambient Temperature ( °C )
0
100
94 7996 e
Figure 1. Power Dissipation vs. Ambient Temperature
2
3
4
VF – Forward Voltage ( V )
Figure 3. Forward Current vs. Forward Voltage
1.5
V F –Forward Voltage ( V )
125
I F – Forward Current ( mA )
1
100
RthJA
75
50
25
1.4
IF = 10 mA
1.3
1.2
1.1
1.0
0.9
0
0
14847
20
40
60
80
Tamb – Ambient Temperature ( °C )
100
Figure 2. Forward Current vs. Ambient Temperature
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14347
0.8
–45 –30 –15 0 15 30 45 60 75 90
Tamb – Ambient Temperature ( °C )
Figure 4. Forward Voltage vs. Ambient Temperature
Document Number 81074
Rev. 1, 30–Apr–02
TSKS5400S
Vishay Semiconductors
1.25
e rel – Relative Radiant Power
I e – Radiant Intensity ( mW/sr )
100
10
1
tp/T = 0.001
tp = 100 s
0.1
1.0
0.75
0.5
0.25
IF = 100 mA
0.01
100
94 7913 e
101
102
103
IF – Forward Current ( mA )
0
900
104
Figure 5. Radiant Intensity vs. Forward Current
Figure 8. Relative Radiant Power vs. Wavelength
I e rel – Relative Radiant Intensity
0°
e – Radiant Power ( mW )
100.0
10.0
1.0
1000
950
– Wavelength ( nm )
94 7994 e
10
°
20
°
30°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
0.1
1
13718
0.6
10
100
1000
IF – Forward Current ( mA )
0.4
0.2
0
0.2
0.4
0.6
14349
Figure 6. Radiant Power vs. Forward Current
Figure 9. Relative Radiant Intensity vs.
Angular Displacement
1.6
1.4
IF = 10 mA
I e rel ; e rel
1.2
1.0
0.8
0.6
0.4
0.2
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0.0
–45 –30 –15 0 15 30 45 60 75
Tamb – Ambient Temperature ( °C )
90
Figure 7. Relative Radiant Intensity vs.
Ambient Temperature
Document Number 81074
Rev. 1, 30–Apr–02
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TSKS5400S
Vishay Semiconductors
Dimensions of TSKS5400S in mm
14307
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Document Number 81074
Rev. 1, 30–Apr–02
TSKS5400S
Vishay Semiconductors
Tape and Ammopack Standards
Kennzeichnung:
Barcode–Etikett siehe 5.6.4
Labeling:
Barcode–label see 5.6.4
16716
Document Number 81074
Rev. 1, 30–Apr–02
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TSKS5400S
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone
depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their
use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs
listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances
and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the
buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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Document Number 81074
Rev. 1, 30–Apr–02