Si4838DY New Product Vishay Siliconix N-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 12 rDS(on) (W) ID (A) 0.003 @ VGS = 4.5 V 25 0.004 @ VGS = 2.5 V 20 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 12 Gate-Source Voltage VGS "8 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current (10 ms Pulse Width) IS TA = 25_C TA = 70_C Operating Junction and Storage Temperature Range PD V 25 17 20 13 IDM Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa ID A 60 2.9 1.3 3.5 1.6 2.2 1 TJ, Tstg Unit W _C -55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction Junction-to-Ambient to Ambienta Maximum Junction-to-Foot (Drain) Symbol t v 10 sec Steady State Steady State RthJA RthJF Typical Maximum 29 35 67 80 13 16 Unit _C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71359 S-03662—Rev. C, 14-Apr-03 www.vishay.com 1 Si4838DY New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max VGS(th) VDS = VGS, ID = 250 mA 0.6 IGSS VDS = 0 V, VGS = "8 V "100 VDS = 9.6 V, VGS = 0 V 1 VDS = 9.6 V, VGS = 0 V, TJ = 55_C 5 Unit Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea VDS w 5 V, VGS = 4.5 V rDS(on) Forward Transconductancea Diode Forward Voltagea V 30 nA mA A VGS = 4.5 V, ID = 25 A 0.0024 0.003 VGS = 2.5 V, ID = 20 A 0.0031 0.004 gfs VDS = 6 V, ID = 25 A 80 VSD IS = 2.9 A, VGS = 0 V 0.75 1.1 40 60 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance RG Turn-On Delay Time nC 6.7 9.2 1.7 2.9 td(on) 40 60 tr 40 60 140 210 70 100 50 80 Rise Time Turn-Off Delay Time VDS = 6 V, VGS = 4.5 V, ID = 25 A 1.0 VDD = 6 V, RL = 6 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr IF = 2.9 A, di/dt = 100 A/ms W ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 60 60 VGS = 5 thru 2 V 50 I D - Drain Current (A) I D - Drain Current (A) 50 40 30 20 10 40 30 TC = 125_C 20 25_C 10 1.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) www.vishay.com 2 3.0 0 0.0 -55_C 0.5 1.0 1.5 2.0 VGS - Gate-to-Source Voltage (V) Document Number: 71359 S-03662—Rev. C, 14-Apr-03 Si4838DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Capacitance 7500 0.004 6000 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) On-Resistance vs. Drain Current 0.005 VGS = 2.5 V 0.003 VGS = 4.5 V 0.002 0.001 Ciss 4500 3000 Coss Crss 1500 0.000 0 0 10 20 30 40 50 60 0 2 ID - Drain Current (A) Gate Charge 8 10 12 On-Resistance vs. Junction Temperature 1.6 VDS = 6 V ID = 25 A 4 r DS(on) - On-Resistance ( W) (Normalized) V GS - Gate-to-Source Voltage (V) 6 VDS - Drain-to-Source Voltage (V) 5 3 2 1 0 0 9 18 27 36 1.2 1.0 0.8 0.6 -50 45 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.015 r DS(on) - On-Resistance ( W ) 60 TJ = 150_C 10 TJ = 25_C 0.012 0.009 0.006 ID = 25 A 0.003 0.000 1 0.00 VGS = 4.5 V ID = 25 A 1.4 Qg - Total Gate Charge (nC) I S - Source Current (A) 4 0.2 0.4 0.6 0.8 VSD - Source-to-Drain Voltage (V) Document Number: 71359 S-03662—Rev. C, 14-Apr-03 1.0 1.2 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) www.vishay.com 3 Si4838DY New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power 0.4 60 50 ID = 250 mA -0.0 40 Power (W) V GS(th) Variance (V) 0.2 -0.2 -0.4 30 20 -0.6 10 -0.8 -1.0 -50 -25 0 25 50 75 100 125 150 0 10 - 2 10 - 1 TJ - Temperature (_C) 1 10 100 600 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 67_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 www.vishay.com 4 10 - 3 10 - 2 10 - 1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71359 S-03662—Rev. C, 14-Apr-03