VISHAY SI4406DY

Si4406DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
D TrenchFETr Power MOSFET
D Optimized for “Low Side” Synchronous
Rectifier Operation
D 100% RG Tested
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
ID (A)
0.0045 @ VGS = 10 V
20
0.0055 @ VGS = 4.5 V
17
APPLICATIONS
D DC/DC Converters
D Synchronous Rectifiers
D
SO-8
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
G
Top View
S
Ordering Information: Si4406DY
Si4406DY-T1 (with Tape and Reel)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
"20
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
TA = 70_C
Pulsed Drain Current (10 ms Pulse Width)
IS
TA = 25_C
TA = 70_C
Operating Junction and Storage Temperature Range
PD
V
20
13
15
10
IDM
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
ID
A
60
2.9
1.3
3.5
1.6
2.2
1
TJ, Tstg
Unit
W
_C
-55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction
Junction-to-Ambient
to Ambienta
Maximum Junction-to-Foot (Drain)
Symbol
t v 10 sec
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
29
35
67
80
13
16
Unit
_C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71824
S-03951—Rev. C, 26-May-03
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2-1
Si4406DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
VGS(th)
VDS = VGS, ID = 250 mA
1.0
1.95
3.0
V
IGSS
VDS = 0 V, VGS = "20 V
"100
nA
VDS = 24 V, VGS = 0 V
1
VDS = 24 V, VGS = 0 V, TJ = 55_C
5
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
VDS w 5 V, VGS = 10 V
rDS(on)
Forward Transconductancea
Diode Forward Voltagea
mA
30
A
VGS = 10 V, ID = 20 A
0.0035
0.0045
VGS = 4.5 V, ID = 19 A
0.0043
0.0055
gfs
VDS = 15 V, ID = 20 A
95
VSD
IS = 2.9 A, VGS = 0 V
0.72
1.1
34
50
W
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
RG
Turn-On Delay Time
nC
15
10
1.3
2.2
td(on)
21
35
tr
15
25
100
150
30
45
50
80
Rise Time
Turn-Off Delay Time
VDS = 15 V, VGS = 4.5 V, ID = 20 A
0.5
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
IF = 2.9 A, di/dt = 100 A/ms
W
ns
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
60
60
VGS = 10 thru 4 V
50
I D - Drain Current (A)
I D - Drain Current (A)
50
40
30
20
3V
10
40
30
20
TC = 125_C
10
25_C
-55_C
0
0
1
2
3
4
VDS - Drain-to-Source Voltage (V)
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2-2
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VGS - Gate-to-Source Voltage (V)
Document Number: 71824
S-03951—Rev. C, 26-May-03
Si4406DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.010
7000
0.008
5600
C - Capacitance (pF)
r DS(on) - On-Resistance ( W )
Ciss
0.006
VGS = 4.5 V
0.004
VGS = 10 V
0.002
4200
2800
Coss
1400
Crss
0.000
0
0
10
20
30
40
50
0
6
Gate Charge
24
30
On-Resistance vs. Junction Temperature
6
1.8
VDS = 15 V
ID = 20 A
5
r DS(on) - On-Resistance ( W)
(Normalized)
V GS - Gate-to-Source Voltage (V)
18
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
4
3
2
1
VGS = 10 V
ID = 20 A
1.6
1.4
1.2
1.0
0.8
0
0
10
20
30
40
0.6
-50
50
-25
0
Source-Drain Diode Forward Voltage
50
75
100
125
150
On-Resistance vs. Gate-to-Source Voltage
0.020
r DS(on) - On-Resistance ( W )
50
TJ = 150_C
10
TJ = 25_C
0.016
ID = 20 A
0.012
0.008
0.004
0.000
1
0.00
25
TJ - Junction Temperature (_C)
Qg - Total Gate Charge (nC)
I S - Source Current (A)
12
0.2
0.4
0.6
0.8
VSD - Source-to-Drain Voltage (V)
Document Number: 71824
S-03951—Rev. C, 26-May-03
1.0
1.2
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
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2-3
Si4406DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.6
60
ID = 250 mA
50
0.2
40
Power (W)
V GS(th) Variance (V)
0.4
-0.0
-0.2
30
20
-0.4
10
-0.6
-0.8
-50
-25
0
25
50
75
100
125
150
0
10 - 2
10 - 1
TJ - Temperature (_C)
1
10
100
600
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 67_C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10 - 4
10 - 3
10 - 2
10 - 1
1
Square Wave Pulse Duration (sec)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 - 4
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2-4
10 - 3
10 - 2
10 - 1
Square Wave Pulse Duration (sec)
1
10
Document Number: 71824
S-03951—Rev. C, 26-May-03