bc556.pdf

BC556 ... BC559
BC556 ... BC559
General Purpose Si-Epitaxial PlanarTransistors
Si-Epitaxial Planar-Transistoren für universellen Einsatz
PNP
PNP
Version 2006-05-31
Power dissipation – Verlustleistung
18
9
16
CBE
2 x 2.54
Dimensions - Maße [mm]
500 mW
Plastic case
Kunststoffgehäuse
TO-92
(10D3)
Weight approx. – Gewicht ca.
0.18 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings (TA = 25°C)
Grenzwerte (TA = 25°C)
BC556
BC557
BC558/559
Collector-Emitter-voltage
E-B short
- VCES
80 V
50 V
30 V
Collector-Emitter-voltage
B open
- VCEO
65 V
45 V
30 V
Collector-Base-voltage
E open
- VCBO
80 V
50 V
30 V
Emitter-Base-voltage
C open
- VEB0
5V
Power dissipation – Verlustleistung
Ptot
500 mW 1)
Collector current – Kollektorstrom (dc)
- IC
100 mA
Peak Collector current – Kollektor-Spitzenstrom
- ICM
200 mA
Peak Base current – Basis-Spitzenstrom
- IBM
200 mA
Peak Emitter current – Emitter-Spitzenstrom
IEM
200 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Group A
Group B
Group C
DC current gain – Kollektor-Basis-Stromverhältnis 2)
- VCE = 5 V, - IC = 10 µA
hFE
typ. 90
typ. 150
typ. 270
- VCE = 5 V, - IC = 2 mA
hFE
110 ... 220
200 ... 450
420 ... 800
- VCE = 5 V, - IC = 100 mA
hFE
typ. 120
typ. 200
typ. 400
h-Parameters at/bei - VCE = 5 V, - IC = 2 mA, f = 1 kHz
1
Small signal current gain
Kleinsignal-Stromverstärkung
hfe
typ. 220
typ. 330
typ. 600
Input impedance – Eingangs-Impedanz
hie
1.6 ... 4.5 kΩ
3.2 ...8.5 kΩ
6 ... 15 kΩ
Output admittance – Ausgangs-Leitwert
hoe
18 < 30 µS
30 < 60 µS
60 < 110 µS
Reverse voltage transfer ratio
Spannungsrückwirkung
hre
typ. 1.5*10-4
typ. 2*10-4
typ. 3*10-4
Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
© Diotec Semiconductor AG
http://www.diotec.com/
1
BC556 ... BC559
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom
- VCE = 80 V, (B-E short)
- VCE = 50 V, (B-E short)
- VCE = 30 V, (B-E short)
BC546
BC547
BC548 / BC549
- ICES
- ICES
- ICES
–
–
–
0.2 nA
0.2 nA
0.2 nA
15 nA
15 nA
15 nA
- VCE = 80 V, Tj = 125°C, (B-E short)
- VCE = 50 V, Tj = 125°C, (B-E short)
- VCE = 30 V, Tj = 125°C, (B-E short)
BC546
BC547
BC548 / BC549
- ICES
- ICES
- ICES
–
–
–
–
–
–
4 µA
4 µA
4 µA
–
–
80 mV
250 mV
300 mV
650 mV
- VBEsat
- VBEsat
–
–
700 mV
900 mV
–
–
- VBE
- VBE
600 mV
–
660 mV
–
750 mV
800 mV
fT
–
150 MHz
–
CCBO
–
3.5 pF
6 pF
CEB0
–
10 pF
–
F
F
–
–
2 dB
1 dB
10 dB
4 dB
Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg 2)
- IC = 10 mA, - IB = 0.5 mA
- IC = 100 mA, - IB = 5 mA
- VCEsat
- VCEsat
Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung 2)
- IC = 10 mA, - IB = 0.5 mA
- IC = 100 mA, - IB = 5 mA
Base-Emitter-voltage – Basis-Emitter-Spannung 2)
- VCE = 5 V, - IC = 2 mA
- VCE = 5 V, - IC = 10 mA
Gain-Bandwidth Product – Transitfrequenz
- VCE = 5 V, - IC = 10 mA, f = 100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE =ie = 0, f = 1 MHz
Emitter-Base Capacitance – Emitter-Basis-Kapazität
- VEB = 0.5 V, IC = ic = 0, f = 1 MHz
Noise figure – Rauschzahl
- VCE = 5 V, - IC = 200 µA, RG = 2 kΩ
f = 1 kHz, Δf = 200 Hz
BC556 ... BC558
BC559
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
Available current gain groups per type
Lieferbare Stromverstärkungsgruppen pro Typ
2
1
2
RthA
< 200 K/W 1)
BC546 ... BC549
BC556A
BC557A
BC558A
BC556B
BC557B
BC558B
BC559B
BC557C
BC558C
BC559C
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
http://www.diotec.com/
© Diotec Semiconductor AG
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