IDP20C65D2 Data Sheet (1.7 MB, EN)

Diode
RapidSwitchingEmitterControlledDiode
IDP20C65D2
EmitterControlledDiodeRapid2CommonCathodeSeries
Datasheet
IndustrialPowerControl
IDP20C65D2
EmitterControlledDiodeRapid2CommonCathodeSeries
RapidSwitchingEmitterControlledDiode
Features:
A1 C1 C2 A2
A2
A1
•QualifiedaccordingtoJEDECfortargetapplications
•650VEmitterControlledtechnology
•Fastrecovery
•Softswitching
•Lowreverserecoverycharge
•Lowforwardvoltageandstableovertemperature
•175°Cjunctionoperatingtemperature
•Easyparalleling
•Pb-freeleadplating;RoHScompliant
C
Applications:
•BoostdiodeinCCMPFC
Packagepindefinition:
•Pin1-anode(A1)
•Pin2andbackside-cathode(C)
•Pin3-anode(A2)
Key Performance and Package Parameters
Type
IDP20C65D2
Vrrm
If
Vf, Tvj=25°C
Tvjmax
Marking
Package
650V
2x 10A
1.6V
175°C
C20ED2
PG-TO220-3
2
Rev.2.1,2014-09-18
IDP20C65D2
EmitterControlledDiodeRapid2CommonCathodeSeries
Table of Contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings (electrical parameters per diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistances (per diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
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Rev.2.1,2014-09-18
IDP20C65D2
EmitterControlledDiodeRapid2CommonCathodeSeries
Maximum Ratings (electrical parameters per diode)
For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in this datasheet.
Parameter
Symbol
Value
Unit
Repetitivepeakreversevoltage,Tvj≥25°C
VRRM
650
V
Diodeforwardcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
IF
20.0
10.0
A
Diodepulsedcurrent,tplimitedbyTvjmax
IFpuls
30.0
A
Diode surge non repetitive forward current
TC=25°C,tp=8.3ms,sinehalfwave
IFSM
PowerdissipationTC=25°C
Ptot
68.0
W
Operating junction temperature
Tvj
-40...+175
°C
Storage temperature
Tstg
-55...+150
°C
A
60.0
Soldering temperature,
wave soldering 1.6 mm (0.063 in.) from case for 10s
°C
260
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
0.6
Nm
Thermal Resistances (per diode)
Parameter
Characteristic
Symbol Conditions
Max. Value
Unit
Diode thermal resistance,1)
junction - case
Rth(j-c)
2.20
K/W
Thermal resistance
junction - ambient
Rth(j-a)
62
K/W
Electrical Characteristics (per diode), at Tvj = 25°C, unless otherwise specified
Parameter
Symbol Conditions
Value
min.
typ.
max.
Unit
Static Characteristic
Diode forward voltage
VF
IF=10.0A
Tvj=25°C
Tvj=175°C
-
1.60
1.65
2.20
-
V
Reverse leakage current2)
IR
VR=650V
Tvj=25°C
Tvj=175°C
-
4.0
250.0
40.0
-
µA
Electrical Characteristic, at Tvj = 25°C, unless otherwise specified
Parameter
Symbol Conditions
Value
min.
typ.
max.
-
7.0
-
Unit
Dynamic Characteristic
Internal emitter inductance
measured 5mm (0.197 in.) from
case
1)
2)
LE
nH
Please be aware that in non standard load conditions, due to high Rth(j-c), Tvj close to Tvjmax can be reached.
Reverse leakage current per diode specified for operating conditions with zero voltage applied to the other diode.
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Rev.2.1,2014-09-18
IDP20C65D2
EmitterControlledDiodeRapid2CommonCathodeSeries
Switching Characteristics (per diode), Inductive Load
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
Tvj=25°C,
VR=400V,
IF=10.0A,
diF/dt=1000A/µs,
Lσ=30nH,
Cσ=40pF,
switch IKW50N65H5
-
28
-
ns
-
0.16
-
µC
-
8.6
-
A
-
-740
-
A/µs
Tvj=25°C,
VR=400V,
IF=10.0A,
diF/dt=350A/µs,
Lσ=30nH,
Cσ=40pF,
switch IKW50N65H5
-
50
-
ns
-
0.13
-
µC
-
4.3
-
A
-
-130
-
A/µs
Diode Characteristic, at Tvj = 25°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Switching Characteristics (per diode), Inductive Load
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
Tvj=175°C,
VR=400V,
IF=10.0A,
diF/dt=1000A/µs,
Lσ=30nH,
Cσ=40pF,
switch IKW50N65H5
-
35
-
ns
-
0.23
-
µC
-
11.3
-
A
-
-730
-
A/µs
Tvj=125°C,
VR=400V,
IF=10.0A,
diF/dt=350A/µs,
Lσ=30nH,
Cσ=40pF,
switch IKW50N65H5
-
54
-
ns
-
0.18
-
µC
-
5.0
-
A
-
-190
-
A/µs
Diode Characteristic, at Tvj = 175°C/125°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
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Rev.2.1,2014-09-18
IDP20C65D2
EmitterControlledDiodeRapid2CommonCathodeSeries
Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W]
70
Ptot,POWERDISSIPATION[W]
60
50
40
30
20
10
0
25
50
75
100
125
150
1
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
0.1
i:
1
2
3
4
5
6
ri[K/W]: 0.022723 0.47244 0.90303 0.744775 0.052669
1.6E-3
τi[s]:
8.0E-6
1.2E-4
6.7E-4
4.5E-3
0.05602283 2.034609
0.01
1E-6
175
1E-5
TC,CASETEMPERATURE[°C]
Figure 1. Power dissipation per diode as a function of
case temperature
(Tvj≤175°C)
0.01
0.1
0.30
Tj=25°C, IF = 10A
Tj=175°C, IF = 10A
Tj=25°C, IF = 10A
Tj=175°C, IF = 10A
Qrr,REVERSERECOVERYCHARGE[µC]
60
trr,REVERSERECOVERYTIME[ns]
0.001
Figure 2. Diode transient thermal impedance per diode
as a function of pulse width
(D=tp/T)
70
50
40
30
20
10
0
1E-4
tp,PULSEWIDTH[s]
0
500
1000
1500
2000
2500
0.25
0.20
0.15
0.10
0.05
0.00
3000
diF/dt,DIODECURRENTSLOPE[A/µs]
0
500
1000
1500
2000
2500
3000
diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 3. Typical reverse recovery time as a function of Figure 4. Typical reverse recovery charge per diode as
diode current slope
a function of diode current slope
(VR=400V)
(VR=400V)
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Rev.2.1,2014-09-18
IDP20C65D2
EmitterControlledDiodeRapid2CommonCathodeSeries
25
0
Tj=25°C, IF = 10A
Tj=175°C, IF = 10A
-250
20
dIrr/dt,diodepeakrateoffallofIrr[A/µs]
Irr,REVERSERECOVERYCURRENT[A]
Tj=25°C, IF = 10A
Tj=175°C, IF = 10A
15
10
-500
-750
-1000
5
0
-1250
0
500
1000
1500
2000
2500
-1500
3000
0
diF/dt,DIODECURRENTSLOPE[A/µs]
500
1000
1500
2000
2500
3000
diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 5. Typical reverse recovery current per diode as Figure 6. Typical diode peak rate of fall of rev. rec.
a function of diode current slope
current per diode as a function of diode
(VR=400V)
current slope
(VR=400V)
30
2.50
Tj=25°C
Tj=175°C
IF=5A
IF=10A
IF=20A
2.25
VF,FORWARDVOLTAGE[V]
IF,FORWARDCURRENT[A]
25
20
15
10
2.00
1.75
1.50
1.25
1.00
5
0.75
0
0.0
0.5
1.0
1.5
2.0
0.50
2.5
VF,FORWARDVOLTAGE[V]
25
50
75
100
125
150
175
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 7. Typical diode forward current per diode as a
function of forward voltage
Figure 8. Typical diode forward voltage as a function of
junction temperature
7
Rev.2.1,2014-09-18
IDP20C65D2
EmitterControlledDiodeRapid2CommonCathodeSeries
PG-TO220-3
8
Rev.2.1,2014-09-18
IDP20C65D2
EmitterControlledDiodeRapid2CommonCathodeSeries
vGE(t)
90% VGE
a
a
10% VGE
b
b
t
iC(t)
90% IC
90% IC
10% IC
10% IC
t
vCE(t)
t
td(off)
tf
td(on)
t
tr
vGE(t)
90% VGE
10% VGE
t
iC(t)
CC
2% IC
t
vCE(t)
t2
E =
off
∫V
t
CE
t4
x IC x d t
E
1
t1
on
=
∫V
t
CE x IC x d t
2% VCE
3
t2
t3
t4
9
t
Rev.2.1,2014-09-18
IDP20C65D2
Emitter Controlled Diode Rapid 2 Common Cathode Series
Revision History
IDP20C65D2
Revision: 2014-09-18, Rev. 2.1
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.1
2014-09-18
Final data sheet
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Published by
Infineon Technologies AG
81726 Munich, Germany
81726 München, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.
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For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon
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The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems
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10
Rev. 2.1, 2014-09-18