RQK0604IGDQA Silicon N Channel MOS FET Power Switching REJ03G1496-0100 Rev.1.00 Jan 15, 2007 Features • Low on-resistance RDS(on) = 111 mΩ typ.(at VGS = 4.5 V, ID = 1 A) • Low drive current • High speed switching • VDSS ≥ 60 V and capable of 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 D 3 2 G 1 1. Source 2. Gate 3. Drain 2 S 1 Note: Marking is “IG“. Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse) Note1 IDR Pch Note2 Tch Tstg Notes: 1. PW ≤ 10 µs, Duty cycle ≤ 1% 2. When using the glass epoxy board (FR-4 40 × 40 × 1 mm) Rev.1.00 Jan 15, 2007 page 1 of 7 Ratings 60 ±12 2 8 2 0.8 150 –55 to +150 Unit V V A A A W °C °C RQK0604IGDQA Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Gate to source leak current Drain to source leak current Gate to source cutoff voltage Drain to source on state resistance Drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn - on delay time Rise time Turn - off delay time Fall time Symbol V(BR)DSS V(BR)GSS V(BR)GSS IGSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf Min 60 +12 –12 — — — 0.4 — — 3 — — — — — — — Typ — — — — — — — 111 129 6 320 38 20 12 35 36 3.7 Max — — — +10 –10 1 1.4 144 180 — — — — — — — — Unit V V V µA µA µA V mΩ mΩ S pF pF pF ns ns ns ns Total gate charge Gate to Source charge Gate to drain charge Body - drain diode forward voltage Notes: 3. Pulse test Qg Qgs Qgd VDF — — — — 3.4 0.6 1.0 0.8 — — — — nC nC nC V Rev.1.00 Jan 15, 2007 page 2 of 7 Test conditions ID = 10 mA, VGS = 0 IG = +100 µA, VDS = 0 IG = –100 µA, VDS = 0 VGS = +10 V, VDS = 0 VGS = –10 V, VDS = 0 VDS = 60 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 1 A, VGS = 4.5 V Note3 ID = 1 A, VGS = 2.5 V Note3 ID = 1 A, VDS = 10 V Note3 VDS = 10 V VGS = 0 f = 1 MHz ID = 1 A VGS = 10 V RL = 10 Ω Rg = 4.7 Ω VDD = 10 V VGS = 4.5 V ID = 2 A IF = 2 A, VGS = 0 Note3 RQK0604IGDQA Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating 100 Test Condition : When using the glass epoxy board (FR-4 40 x 40 x 1 mm) 0.8 30 Drain Current ID (A) Channel Dissipation Pch (W) 1 0.6 0.4 0.2 3 PW 1 DC 0.3 1 = µs m s Op at ion Operation in this area is limited by RDS(on) 0.03 0 s 10 er 0.1 10 m 0.01 0.003 Ta = 25°C 1shot pulse 0.001 0.01 0.03 0.1 0.3 0 0 25 50 75 100 125 150 175 Ambient Temperature 1 3 10 30 100 Drain to Source Voltage VDS (V) Ta (°C) Typical Output Characteristics Typical Transfer Characteristics (1) 10 10 3V 5V 8 VDS = 10 V Pulse Test 2.2 V 2.4 V Drain Current ID (A) Drain Current ID (A) 10 µs 10 2V 7, 10 V 6 1.8 V Pulse Test Tc = 25°C 4 1.6 V 2 1.4 V 8 6 4 75°C 2 25°C Tc = –25°C VGS = 0 V 0 2 4 6 8 0 10 Drain to Source Voltage VDS (V) 1 2 3 4 Gate to Source Voltage VGS (V) 1 Drain Current ID (A) VDS = 10 V Pulse Test 0.1 0.01 Tc = 75°C 0.001 25°C 0.0001 –25°C 0.00001 0 0.5 1 1.5 Gate to Source Voltage VGS (V) Rev.1.00 Jan 15, 2007 page 3 of 7 2 Gate to Source Cutoff Voltage VGS(off) (V) Gate to Source Cutoff Voltage vs. Typical Transfer Characteristics (2) Case Temperature 10 ID = 10 mA 1 1 mA 0.1 mA VDS = 10 V Pulse Test 0 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) RQK0604IGDQA 500 Pulse Test Tc = 25°C 400 300 2A 200 1.5 A 1A 100 ID = 0.5 A 0 2 4 6 8 10 Static Drain to Source on State Resistance vs. Drain Current Drain to Source On State Resistance RDS(on) (mΩ) Drain to Source Voltage VDS(on) (mV) Drain to Source Saturation Voltage vs. Gate to Source Voltage 1000 Pulse Test Tc = 25°C 2.5 V 100 VGS = 10 V 10 0.1 Drain Current ID (A) Static Drain to Source on State Resistance vs. Case Temperature (2) Drain to Source on State Resistance RDS(on) (mΩ) ID = 2 A 1.5 A 150 1A 0.5 A 100 50 –25 Pulse Test VGS = 4.5 V 0 25 50 75 100 125 150 250 Pulse Test VGS = 2.5 V ID = 2 A 200 1.5 A 150 1A 0.5 A 100 50 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) Case Temperature Tc (°C) Forward Transfer Admittance vs. Drain Current Zero Gate Voltage Drain current vs. Case Temperature 100 Pulse Test VDS = 10 V –25°C 10 1 25°C Tc = 75°C 0.1 0.01 0.01 0.1 1 Drain Current ID (A) Rev.1.00 Jan 15, 2007 page 4 of 7 10 Zero Gate Voltage Drain current IDSS (nA) Forward Transfer Admittance |yfs| (S) Drain to Source on State Resistance RDS(on) (mΩ) Static Drain to Source on State Resistance vs. Case Temperature (1) 200 10 1 Gate to Source Voltage VGS (V) 250 4.5 V 10000 1000 Pulse Test VGS = 0 V VDS = 60 V 100 10 1 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) RQK0604IGDQA Switching Characteristics 16 VDD = 10 V 25 V 60 12 50 V VGS VDD = 50 V 40 8 25 V 10V 20 4 ID = 2.0 A Tc = 25°C 0 VDS 0 2 4 6 1000 Switching Time t (ns) 80 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) Dynamic Input Characteristics td(off) 10 td(on) 0.1 10 1 Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage Input Capacitance vs. Gate to Source Voltage 700 VGS = 0 V f = 1 MHz 650 Ciss2 (pF) Ciss 100 600 550 500 Coss 450 VDS = 0 V f = 1 MHz Crss 10 0 10 20 30 40 50 2 4 6 8 10 Gate to Source Voltage VGS (V) Reverse Drain Current vs. Source to Drain Voltage Body-Drain Diode Forward Voltage vs. Case Temperature 8 10 V 6 4.5 V 4 2.5 V VGS = –2.5 V, –4.5 V, –10 V 2 VGS = 0 V 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Rev.1.00 Jan 15, 2007 page 5 of 7 Body-Drain Diode Forward Voltage VSDF (V) Drain to Source Voltage VDS (V) Pulse Test Tc = 25°C 0 400 –10 –8 –6 –4 –2 0 60 10 Reverse Drain Current IDR (A) tf tr Gate Charge Qg (nc) 1000 Ciss1, Coss, Crss (pF) 100 1 0.01 0 10 8 VGS = 4.5 V, VDD = 10 V Rg = 4.7 Ω, duty ≤ 1 % Tc = 25°C 0.7 VGS = 0 0.6 0.5 ID = 10 mA 0.4 0.3 1 mA 0.2 0.1 0 –25 0 25 50 75 100 125 150 Case Temperature Tc (°C) RQK0604IGDQA Switching Time Test Circuit 90% Vout Monitor Vin Monitor Rg Waveform D.U.T. RL Vin Vout Vin 10 V VDD = 10 V 10% 10% 90% td(on) Rev.1.00 Jan 15, 2007 page 6 of 7 10% tr 90% td(off) tf RQK0604IGDQA Package Dimensions JEITA Package Code SC-59A Package Name MPAK RENESAS Code PLSP0003ZB-A D Previous Code MPAK(T) / MPAK(T)V A Q e E c HE L A MASS[Typ.] 0.011g LP L1 A3 A x M S A b Reference Dimension in Millimeters Symbol Min Nom Max e A2 A e1 A1 S b I1 c b2 A-A Section Pattern of terminal position areas A A1 A2 A3 b c D E e HE L L1 LP x b2 e1 I1 Q 1.0 0 1.0 0.35 0.1 2.7 1.35 2.2 0.35 0.15 0.25 1.1 0.25 0.4 0.16 1.5 0.95 2.8 Rev.1.00 Jan 15, 2007 page 7 of 7 Quantity 3000 pcs. 0.5 0.26 3.1 1.65 3.0 0.75 0.55 0.65 0.05 0.55 1.95 1.05 0.3 Ordering Information Part No. RQK0604IGDQATL-E 1.3 0.1 1.2 Shipping Container φ178 mm reel, 8 mm Emboss taping Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. 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