RENESAS BCR25RM-12LB

BCR25RM-12LB
Triac
Medium Power Use
REJ03G1715-0100
Rev.1.00
Jul 10, 2008
Features
•
•
•
•
• The product guaranteed maximum junction
temperature of 150°C
• Insulated Type
• Planar Type
IT (RMS) : 25 A
VDRM: 600 V
IFGTI, IRGTI, IRGTIII: 50 mA
Viso: 2000 V
Outline
RENESAS Package code: PRSS0003ZA-A
(Package name: TO-3PFM)
2
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
3
1
1
2
3
Applications
Contactless AC switch, electric heater control, light dimmer, on/off and speed control of small induction motor, on/off
control of copier lamp
Maximum Ratings
Parameter
Repetitive peak off-state voltage Note1
Non-repetitive peak off-state voltage Note1
Notes: 1. Gate open.
REJ03G1715-0100 Rev.1.00 Jul 10, 2008
Page 1 of 7
Symbol
VDRM
VDSM
Voltage class
12
600
720
Unit
V
V
BCR25RM-12LB
Symbol
Ratings
Unit
RMS on-state current
Parameter
IT (RMS)
25
A
Surge on-state current
ITSM
250
A
I2t
313
A2s
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Viso
5
0.5
10
2
–40 to +150
–40 to +150
5.2
2000
W
W
V
A
°C
°C
g
V
I2t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Mass
Isolation voltage
Conditions
Commercial frequency, sine full wave 360°
conduction, Tc = 96°C
50 Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half wave 50
Hz, surge on-state current
Typical value
Ta = 25°C, AC 1 minute,
T1·T2·G terminal to case
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Symbol
IDRM
VTM
Min.
—
—
Typ.
—
—
Max.
3.0/5.0
1.5
Unit
mA
V
Test conditions
Tj = 125°C /150°C, VDRM applied
Tc = 25°C, ITM = 40 A,
instantaneous measurement
Gate trigger voltageNote2
Ι
ΙΙ
ΙΙΙ
VFGTΙ
VRGTΙ
VRGTΙΙΙ
—
—
—
—
—
—
2.0
2.0
2.0
V
V
V
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Gate trigger curentNote2
Ι
ΙΙ
ΙΙΙ
IFGTΙ
IRGTΙ
IRGTΙΙΙ
—
—
—
—
—
—
50
50
50
mA
mA
mA
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
VGD
Rth (j-c)
0.2/0.1
—
—
—
—
1.7
V
°C/W
Tj = 125°C /150°C, VD = 1/2 VDRM
Junction to caseNote3
(dv/dt)c
10/1
—
—
V/µs
Tj = 125°C /150°C
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
Note4
commutation voltage
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125/150°C
2. Rate of decay of on-state commutating current
(di/dt)c = –13 A/ms
3. Peak off-state voltage
VD = 400 V
REJ03G1715-0100 Rev.1.00 Jul 10, 2008
Page 2 of 7
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
(di/dt)c
Time
Main Voltage
(dv/dt)c
Time
VD
BCR25RM-12LB
Performance Curves
Maximum On-State Characteristics
Rated Surge On-State Current
Surge On-State Current (A)
400
102
Tj = 150°C
101
Tj = 25°C
100
0.5
1.0
1.5
2.0
2.5
3.0
102
VGT = 2.0 V
PGM = 5 W
PG(AV) =
0.5 W
IGM = 2 A
100
7
5
3
2
VGD = 0.1 V
5 7103
2 3
5 7104
103
Typical Example
102
IFGT I
IRGT I
IRGT III
101
-40
0
40
80
120
160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
103
Typical Example
102
101
-40
Gate Trigger Current (Tj = 25°C)
VGM = 10 V
× 100 (%)
Gate Trigger Current vs.
Junction Temperature
0
40
80
120
Junction Temperature (°C)
REJ03G1715-0100 Rev.1.00 Jul 10, 2008
Page 3 of 7
160
Transient Thermal Impedance (°C/W)
Gate Voltage (V)
× 100 (%)
Gate Trigger Voltage (Tj = t°C)
101
Gate Characteristics (I, II and III)
10–1
IFGT I, IRGT I, IRGT III
7
5
1
10 2 3 5 7 102 2 3
Gate Trigger Voltage (Tj = 25°C)
100
Conduction Time (Cycles at 50 Hz)
3
2
3
2
200
On-State Voltage (V)
5
101
7
5
300
0
100
3.5
Gate Trigger Current (Tj = t°C)
On-State Current (A)
103
102
2.0
103
104
100
101
1.8
1.6
1.4
1.2
1.0
0.8
0.6
1.4
1.0
0
10-1
102
Conduction Time (Cycles at 50 Hz)
BCR25RM-12LB
Allowable Case Temperature vs.
RMS On-State Current
Maximum On-State Power Dissipation
160
20
10
360° Conduction
Resistive,
inductive loads
0
10
40
80
60
40
360° Conduction
20 Resistive,
inductive loads
0
0
10
20
30
40
Allowable Ambient Temperature vs.
RMS On-State Current
Allowable Ambient Temperature vs.
RMS On-State Current
160
140
100
Curves apply regardless
of conduction angle
Resistive, inductive loads
Natural convection
80
160 160 t2.3
120
60
Ambient Temperature (°C)
All fins are blackpainted
aluminum and greased
120 120 t2.3
40
100 100 t2.3
20
10
20
30
120
100
80
60
40
20
0
1
2
3
4
5
RMS On-State Current (A)
Breakover Voltage vs.
Junction Temperature
Repetitive Peak Off-State Current vs.
Junction Temperature
Typical Example
102
0
40
80
120
Junction Temperature (°C)
REJ03G1715-0100 Rev.1.00 Jul 10, 2008
Page 4 of 7
160
× 100 (%)
RMS On-State Current (A)
103
101
-40
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
140
0
40
Repetitive Peak Off-State Current (Tj = t°C)
Ambient Temperature (°C)
30
100
RMS On-State Current (A)
0
0
× 100 (%)
20
120
RMS On-State Current (A)
160
Breakover Voltage (Tj = t°C)
Case Temperature (°C)
30
0
Breakover Voltage (Tj = 25°C)
Curves apply
regardless of
conduction angle
140
Repetitive Peak Off-State Current (Tj = 25°C)
On-State Power Dissipation (W)
40
106
Typical Example
105
104
103
102
-40
0
40
80
120
Junction Temperature (°C)
160
BCR25RM-12LB
Latching Current vs.
Junction Temperature
103
103
Latching Current (mA)
Typical Example
102
101
-40
0
40
80
120
T2+, G–
Typical
Example
Distribution
102
101
T2–, G–
Typical
Example
100
-40
160
T2+, G+
Typical
Example
0
40
80
120
160
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj = 125°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj = 150°C)
160
Typical Example
Tj = 125°C
140
120
100
III Quadrant
80
60
40
I Quadrant
20
0
101
102
103
104
Breakover Voltage (dv/dt = xV/µs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/µs)
Junction Temperature (°C)
160
Typical Example
Tj = 150°C
140
120
100
80
III Quadrant
60
40
I Quadrant
20
0
101
102
103
104
Rate of Rise of Off-State Voltage (V/µs)
Rate of Rise of Off-State Voltage (V/µs)
Commutation Characteristics (Tj = 125°C)
Commutation Characteristics (Tj = 150°C)
102
7
5
102
7
5
3
2
Typical Example
Tj = 125°C
IT = 4 A
τ = 500 µs
VD = 200 V
f = 3 Hz
Main Voltage
(dv/dt)c
Time
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
Holding Current (Tj = t°C)
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
Breakover Voltage (dv/dt = xV/µs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/µs)
Holding Current (Tj = 25°C)
× 100 (%)
Holding Current vs.
Junction Temperature
VD
Main Current
IT
(di/dt)c
τ
Time
I Quadrant
101
7
5
3
2
100
7
3
III Quadrant
5 7 101
2 3
5 7 102
2
Rate of Decay of On-State
Commutating Current (A/ms)
REJ03G1715-0100 Rev.1.00 Jul 10, 2008
Page 5 of 7
3
3
2
101
7
5
3
2
Typical Example
Tj = 150°C
IT = 4 A
τ = 500 µs
VD = 200 V
f = 3 Hz
Main Voltage
(dv/dt)c
Time
VD
Main Current
IT
(di/dt)c
τ
Time
III Quadrant
I Quadrant
Minimum
Characteristics
100 Value
7
3 5 7 101
2 3
5 7 102
2
Rate of Decay of On-State
Commutating Current (A/ms)
3
BCR25RM-12LB
Gate Trigger Current (tw)
Gate Trigger Current (DC)
× 100 (%)
Gate Trigger Current vs.
Gate Current Pulse Width
103
7
5
4
3
2
Typical Example
IFGT I
IRGT III
IRGT I
102
7
5
4
3
2
101 0
10
2 3 4 5 7 101
2 3 4 5 7 102
Gate Current Pulse Width (µs)
Gate Trigger Characteristics Test Circuits
6Ω
Recommended Circuit Values Around The Triac
Load
6Ω
C1
A
6V
V
Test Procedure I
V
A
V
330Ω
Test Procedure III
REJ03G1715-0100 Rev.1.00 Jul 10, 2008
Page 6 of 7
C0
R0
330Ω
Test Procedure II
6Ω
6V
R1
A
6V
330Ω
C1 = 0.1 to 0.47µF C0 = 0.1µF
R0 = 100Ω
R1 = 47 to 100Ω
BCR25RM-12LB
Package Dimensions
Previous Code
TO-3PFM / TO-3PFMV
15.6 ± 0.3
+ 0.4
– 0.2
2.0 ± 0.3
2.7 ± 0.3
φ3.2
Unit: mm
5.5 ± 0.3
3.2 ± 0.3
4.0 ± 0.3
2.6
0.86
1.6
0.86
0.66
5.45 ± 0.5
MASS[Typ.]
5.2g
21.0 ± 0.5
RENESAS Code
PRSS0003ZA-A
5.0 ± 0.3
JEITA Package Code
SC-93
5.0 ± 0.3
19.9 ± 0.3
Package Name
TO-3PFM
+ 0.2
– 0.1
0.2
0.9 +– 0.1
5.45 ± 0.5
Order Code
Lead form
Straight type
Standard packing
Magazine (Tube)
Quantity
30
Standard order code
Type name
Note : Please confirm the specification about the shipping in detail.
REJ03G1715-0100 Rev.1.00 Jul 10, 2008
Page 7 of 7
Standard order
code example
BCR25RM-12LB
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Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .7.2