ZXMC3AMC

A Product Line of
Diodes Incorporated
ZXMC3AMC
30V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
•
•
•
•
•
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ID max
Device
RDS(on) max
V(BR)DSS
TA = 25°C
(Notes 4 & 7)
Q1
120mΩ @ VGS = 10V
3.7A
180mΩ @ VGS = 4.5V
3.0A
210mΩ @ VGS = -10V
-2.7A
330mΩ @ VGS = -4.5V
-2.2A
30V
Q2
-30V
Mechanical Data
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•
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Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
•
•
•
•
Low profile package, for thin applications
Low RθJA, thermally efficient package
2
6mm footprint, 50% smaller than TSOP6 and SOT23-6
Low on-resistance
Fast switching speed
“Lead-Free”, RoHS Compliant (Note 1)
Halogen and Antimony Free. "Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
MOSFET gate drive
LCD backlight inverters
Motor control
Portable applications
Case: DFN3020B-8
Terminals: Pre-Plated NiPdAu leadframe
Nominal package height: 0.8mm
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Solderable per MIL-STD-202, Method 208
Weight: 0.013 grams (approximate)
D1
DFN3020B-8
D2
D2
D1
D1
G2
G1
D1
D2
D2
S2
S1
G2
Top View
Bottom View
S2
G1
S1
Bottom View
Pin-Out
Pin 1
Q1 N-Channel
Q2 P-Channel
Equivalent Circuit
Ordering Information (Note 3)
Part Number
ZXMC3AMCTA
Notes:
Marking
C01
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
3000
1. No purposefully added lead
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
C01
ZXMC3AMC
Document number: DS35088 Rev. 1 - 2
C01 = Product Type Marking Code
Top view, Dot Denotes Pin 1
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A Product Line of
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ZXMC3AMC
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
VGS = 10V
Pulsed Drain Current
VGS = 10V
Continuous Source Current (Body diode)
Pulse Source Current (Body diode)
(Notes 4 & 7)
TA = 70°C (Notes 4 & 7)
(Notes 3 & 7)
(Notes 6 & 7)
(Notes 4 & 7)
(Notes 6 & 7)
ID
IDM
IS
ISM
N-channel – Q1 P-channel – Q2
-30
30
±20
±20
3.7
-2.7
3.0
-2.2
2.9
-2.1
13
-9.2
3.2
-2.8
13
-9.2
Unit
N-channel – Q1 P-channel – Q2
1.50
12
2.45
19.6
1.13
9
1.70
13.6
83.3
51.0
111
73.5
17.1
-55 to +150
Unit
V
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
(Notes 3 & 7)
Power Dissipation
Linear Derating Factor
(Notes 4 & 7)
PD
(Notes 5 & 7)
(Notes 5 & 8)
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
Notes:
(Notes 3 & 7)
(Notes 4 & 7)
(Notes 5 & 7)
(Notes 5 & 8)
(Notes 7 & 9)
RθJA
RθJL
TJ, TSTG
W
mW/°C
°C/W
°C
2
3. For a device surface mounted on 28mm x 28mm (8cm ) FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition. The heatsink is split in half with the exposed drain pads connected to each half.
4. Same as note (3) except the device is measured at t < 5 sec.
5. Same as note (3), except the device is surface mounted on 31mm x 31mm (10cm2) FR4 PCB with high coverage of single sided 1oz copper.
6. Same as note (3), except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.
7. For a dual device with one active die.
8. For dual device with 2 active die running at equal power.
9. Thermal resistance from junction to solder-point (at the end of the drain lead).
ZXMC3AMC
Document number: DS35088 Rev. 1 - 2
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ZXMC3AMC
RDS(ON)
10
-ID Drain Current (A)
ID Drain Current (A)
Thermal Characteristics
Limited
1
DC
1s
100ms
100m
Limited
1
DC 1s
100ms
8 sq cm 2oz Cu
One active die
Single Pulse, Tamb=25°C
1ms
100us
1
10ms
10m
P-channel Safe Operating Area
60
D=0.5
40
Single Pulse
D=0.05
D=0.1
1m
10m 100m
1
10
100
1k
Max Power Dissipation (W)
Thermal Resistance (°C/W)
8 sq cm 2oz Cu
One active die
0
100µ
2.0
10 sq cm 1oz Cu
Two active die
1.5
8 sq cm 2oz Cu
One active die
10 sq cm 1oz Cu
One active die
1.0
0.5
0.0
0
Pulse Width (s)
75
100
125
150
225
T amb=25°C
2oz Cu
Two active die
T j max=150°C
Continuous
2oz Cu
One active die
1.5
1.0
1oz Cu
One active die
0.5
0.0
0.1
1
1oz Cu
Two active die
10
100
Thermal Resistance (°C/W)
PD Dissipation (W)
2.0
50
Temperature (°C)
3.5
2.5
25
Derating Curve
Transient Thermal Impedance
3.0
10
-VDS Drain-Source Voltage (V)
90
D=0.2
100us
1
10
N-channel Safe Operating Area
20
1ms
8 sq cm 2oz Cu
One active die
Single Pulse, Tamb=25°C
VDS Drain-Source Voltage (V)
80
RDS(ON)
100m
10ms
10m
10
200
ZXMC3AMC
Document number: DS35088 Rev. 1 - 2
1oz Cu
Two active die
150
125
100
75
50
2oz Cu
One active die
2oz Cu
Two active die
25
0
0.1
Board Cu Area (sqcm)
Power Dissipation v Board Area
1oz Cu
One active die
175
1
10
100
Board Cu Area (sqcm)
Thermal Resistance v Board Area
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ZXMC3AMC
Electrical Characteristics – Q1 N-Channel @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
30
-
-
0.5
±100
V
μA
nA
ID = 250μA, VGS = 0V
VDS = 30V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS(th)
1.0
RDS (ON)
-
gfs
VSD
trr
Qrr
-
3.0
0.120
0.180
0.95
-
V
Static Drain-Source On-Resistance (Note 10)
0.100
0.140
3.5
0.85
17.7
13.0
S
V
ns
nC
ID = 250μA, VDS = VGS
VGS = 10V, ID = 2.5A
VGS = 4.5V, ID = 2.0A
VDS = 10V, ID = 2.5A
IS = 1.7A, VGS = 0V
Ciss
Coss
Crss
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
-
190
38
20
2.3
3.9
0.6
0.9
1.7
2.3
6.6
2.9
-
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
Forward Transconductance (Note 10 & 11)
Diode Forward Voltage (Note 10)
Reverse Recover Time (Note 11)
Reverse Recover Charge (Note 11)
DYNAMIC CHARACTERISTICS (Note 11)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 12)
Total Gate Charge (Note 12)
Gate-Source Charge (Note 12)
Gate-Drain Charge (Note 12)
Turn-On Delay Time (Note 12)
Turn-On Rise Time (Note 12)
Turn-Off Delay Time (Note 12)
Turn-Off Fall Time (Note 12)
Notes:
Ω
Test Condition
IS = 2.5A, di/dt= 100A/µs
VDS = 25V, VGS = 0V,
f = 1.0MHz
VGS = 4.5V
VGS = 10V
VDS = 15V
ID = 2.5A
VDS = 15V, ID = 2.5A
VGS = 10V, RG = 6Ω
10. Measured under pulsed conditions. Width ≤ 300µs. Duty cycle ≤ 2%.
11. For design aid only, not subject to production testing.
12. Switching characteristics are independent of operating junction temperature.
ZXMC3AMC
Document number: DS35088 Rev. 1 - 2
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A Product Line of
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ZXMC3AMC
Typical Electrical Characteristics – Q1 N-Channel
10V
7V
T = 150°C
5V
4.5V
ID Drain Current (A)
ID Drain Current (A)
T = 25°C
10
4V
3.5V
1
3V
VGS
0.1
2.5V
0.1
1
10
5V
4.5V
4V
3.5V
3V
2.5V
VGS
0.1
2V
10
0.1
1
10
VDS Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
1.6
VDS = 10V
T = 150°C
1
T = 25°C
0.1
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Normalised RDS(on) and VGS(th)
10
ID Drain Current (A)
7V
1
VDS Drain-Source Voltage (V)
VGS = 10V
1.4
1.0
3.5V
VGS
4V
4.5V
1
5V
7V
0.1
10V
T = 25°C
0.1
1
ID Drain Current (A)
10
On-Resistance v Drain Current
ZXMC3AMC
Document number: DS35088 Rev. 1 - 2
VGS(th)
0.8
VGS = VDS
0.6
0.4
-50
ID = 250uA
0
50
100
150
Normalised Curves v Temperature
ISD Reverse Drain Current (A)
3V
RDS(on)
Tj Junction Temperature (°C)
Typical Transfer Characteristics
2.5V
ID = 2.5A
1.2
VGS Gate-Source Voltage (V)
RDS(on) Drain-Source On-Resistance (W)
10V
10
T = 150°C
1
T = 25°C
0.1
0.4
0.6
0.8
1.0
1.2
VSD Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
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ZXMC3AMC
Typical Electrical Characteristics – Q1 N-Channel - Continued
10
VGS = 0V
250
f = 1MHz
200
CISS
150
COSS
CRSS
100
50
0
0.1
1
10
VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
VGS Gate-Source Voltage (V)
C Capacitance (pF)
300
ID = 2.5A
8
6
VDS = 15V
4
2
0
0
1
2
3
4
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
Test Circuits
Current
regulator
QG
50k
12V
VG
Q GS
Same as
D.U.T
Q GD
V DS
IG
D.U.T
ID
V GS
Charge
Basic gate charge waveform
Gate charge test circuit
V DS
90%
RD
V GS
V DS
RG
VDD
10%
V GS
td(on)
tr
t(on)
td(off)
tr
t(on)
Switching time waveforms
ZXMC3AMC
Document number: DS35088 Rev. 1 - 2
Switching time test circuit
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ZXMC3AMC
Electrical Characteristics – Q2 P-Channel @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
-30
-
-
-0.5
±100
V
μA
nA
ID = -250μA, VGS = 0V
VDS = -30V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS(th)
-1.0
RDS (ON)
-
gfs
VSD
trr
Qrr
-
-3.0
0.210
0.330
-0.95
-
V
Static Drain-Source On-Resistance (Note 13)
0.150
0.280
2.48
-0.85
18.6
14.8
S
V
ns
nC
ID = -250μA, VDS = VGS
VGS = -10V, ID = -1.4A
VGS = -4.5V, ID = -1.1A
VDS = -15V, ID = -1.4A
IS = -1.1A, VGS = 0V
Ciss
Coss
Crss
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
-
206
59.3
49.2
3.8
6.4
0.69
2.0
1.5
2.8
11.3
7.5
-
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
Forward Transconductance (Note 13 & 14)
Diode Forward Voltage (Note 13)
Reverse Recover Time (Note 14)
Reverse Recover Charge (Note 14)
DYNAMIC CHARACTERISTICS (Note 14)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 15)
Total Gate Charge (Note 15)
Gate-Source Charge (Note 15)
Gate-Drain Charge (Note 15)
Turn-On Delay Time (Note 15)
Turn-On Rise Time (Note 15)
Turn-Off Delay Time (Note 15)
Turn-Off Fall Time (Note 15)
Notes:
Ω
Test Condition
IS = -0.95A, di/dt = 100A/µs
VDS = -15V, VGS = 0V,
f = 1.0MHz
VGS = -4.5V
VGS = -10V
VDS = -15V
ID = -1.4A
VDS = -15V, ID = -1A
VGS = -10V, RG = 6Ω
13. Measured under pulsed conditions. Width ≤ 300µs. Duty cycle ≤ 2%.
14. For design aid only, not subject to production testing.
15. Switching characteristics are independent of operating junction temperature.
ZXMC3AMC
Document number: DS35088 Rev. 1 - 2
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ZXMC3AMC
Typical Electrical Characteristics – Q2 P-Channel
10V
T = 25°C
7V
10
5V
4V
3.5V
3V
1
2.5V
2V
0.1
-VGS
-ID Drain Current (A)
-ID Drain Current (A)
10
10V
T = 150°C
5V
4V
3.5V
3V
1
2V
-VGS
0.1
1.5V
0.01
0.01
0.1
1
10
0.1
-VDS Drain-Source Voltage (V)
1
10
-VDS Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
1.4
Normalised RDS(on) and VGS(th)
-ID Drain Current (A)
-VDS = 10V
1
T = 150°C
T = 25°C
0.1
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VGS = -10V
ID = - 1.4A
1.2
1.0
VGS(th)
0.8
VGS = VDS
ID = -250uA
0.6
-50
-VGS Gate-Source Voltage (V)
-VGS
2.5V
3V
T = 25°C
3.5V
4V
5V
1
7V
10V
0.1
1
1
0.1
T = 25°C
Document number: DS35088 Rev. 1 - 2
0.4
0.6
0.8
1.0
1.2
1.4
-VSD Source-Drain Voltage (V)
-ID Drain Current (A)
ZXMC3AMC
150
T = 150°C
10
On-Resistance v Drain Current
100
10
0.01
0.1
50
Normalised Curves v Temperature
-ISD Reverse Drain Current (A)
RDS(on) Drain-Source On-Resistance (Ω)
2V
0
Tj Junction Temperature (°C)
Typical Transfer Characteristics
10
RDS(on)
Source-Drain Diode Forward Voltage
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ZXMC3AMC
Typical Electrical Characteristics – Q2 P-Channel - Continued
10
VGS = 0V
CISS
300
250
-VGS Gate-Source Voltage (V)
C Capacitance (pF)
350
f = 1MHz
COSS
200
150
100
CRSS
50
1
10
-VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
ID = -1.4A
8
6
4
2
VDS = -15V
0
0
1
2
3
4
5
6
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
Test Circuits
Current
regulator
QG
12V
VG
QGS
50k
0.2␮F
Same as
D.U.T
QGD
VDS
IG
D.U.T
ID
VGS
Charge
Gate charge test circuit
Basic gate charge waveform
VDS
90%
RD
VGS
VDS
RG
VDD
10%
VGS
tr
td(off)
t(on)
tr
t(on)
Switching time waveforms
ZXMC3AMC
Document number: DS35088 Rev. 1 - 2
Pulse width ⬍ 1␮S
Duty factor 0.1%
td(on)
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Switching time test circuit
December 2010
© Diodes Incorporated
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ZXMC3AMC
Package Outline Dimensions
A
DFN3020B-8
Dim Min Max Typ
A
0.77 0.83 0.80
A1
0
0.05 0.02
A3
0.15
b
0.25 0.35 0.30
D
2.95 3.075 3.00
D2 0.82 1.02 0.92
D4 1.01 1.21 1.11
e
0.65
E
1.95 2.075 2.00
E2 0.43 0.63 0.53
L
0.25 0.35 0.30
Z
0.375
All Dimensions in mm
A3
A1
D
D4
D4
D2
E
E2
Z
b
e
L
Suggested Pad Layout
C
X
Y1
G1
G
Y2
Y
X1
ZXMC3AMC
Document number: DS35088 Rev. 1 - 2
Dimensions
C
G
G1
X
X1
Y
Y1
Y2
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Value (in mm)
0.650
0.285
0.090
0.400
1.120
0.730
0.500
0.365
December 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMC3AMC
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2010, Diodes Incorporated
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ZXMC3AMC
Document number: DS35088 Rev. 1 - 2
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