ds32120

DMC4040SSD
40V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
ID Max (A)
Device
V(BR)DSS
RDS(ON) Max
TA = +25°C
(Notes 6 & 8)
NEW PRODUCT
Q1
25mΩ @ VGS= 10V
7.5
40mΩ @ VGS= 4.5V
6.2
25mΩ @ VGS= -10V
-7.3
45mΩ @ VGS= -4.5V
-5.7
40V
Q2

Matched N & P RDS(ON) – Minimizes Power Losses




Fast Switching – Minimizes Switching Losses
Dual Device – Reduces PCB Area
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
-40V
Description
Mechanical Data
This MOSFET is designed to ensure that RDS(ON) of N and P channel


FET are matched to minimize losses in both arms of the bridge. The
DMC4040SSD is optimized for use in a 3-phase brushless DC motor
circuit (BLDC), and CCFL backlighting.
Applications





Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (Approximate)
3-Phase BLDC Motor
CCFL Backlighting
SO-8
D1
S1
D1
G1
D1
S2
D2
G2
D2
D2
G1
G2
S1
S2
Q2 P-Channel
Q1 N-Channel
Top View
Top View
Equivalent Circuit
Ordering Information (Note 4)
Product
DMC4040SSD-13
Notes:
Marking
C4040SD
Reel Size (inches)
13
Tape Width (mm)
12
Quantity per Reel
2,500
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
DMC4040SSD
Document number: DS32120 Rev. 3 - 2
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DMC4040SSD
Marking Information
NEW PRODUCT
C4040SD
YY WW
= Manufacturer’s Marking
C4040SD = Product Type Marking Code
YYWW = Date Code Marking
YY or YY= Year (ex: 10 = 2010)
WW = Week (01 - 53)
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
VGS = 10V
Pulsed Drain Current
VGS = 10V
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
(Notes 6 & 8)
TA = +70°C (Notes 6 & 8)
(Notes 5 & 8)
(Notes 5 & 9)
(Notes 7 & 8)
(Notes 6 & 8)
(Notes 7 & 8)
ID
IDM
IS
ISM
N-Channel - Q1
40
20
7.5
5.8
5.7
6.8
29.0
3.0
29.0
P-Channel - Q2
-40
20
-7.5
-5.8
-5.7
-6.8
-29.0
-3.0
-29.0
Unit
N-Channel - Q1 P-Channel - Q2
1.25
10
1.8
14.3
2.14
17.2
100
70
58
51
-55 to +150
Unit
V
A
Thermal Characteristics
Characteristic
Symbol
(Notes 5 & 8)
Power Dissipation
Linear Derating Factor
(Notes 5 & 9)
PD
(Notes 6 & 8)
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
Notes:
(Notes 5 & 8)
(Notes 5 & 9)
(Notes 6 & 8)
(Notes 5 & 10)
RθJA
RθJL
TJ, TSTG
W
mW/°C
°C/W
°C
5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
6. Same as note (5), except the device is measured at t  10 sec.
7. Same as note (5), except the device is pulsed with D = 0.02 and pulse width 300µs.
8. For a dual device with one active die.
9. For a device with two active die running at equal power.
10. Thermal resistance from junction to solder-point (at the end of the drain lead).
DMC4040SSD
Document number: DS32120 Rev. 3 - 2
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DMC4040SSD
Thermal Characteristics (Continued)
1
DC
-ID Drain Current (A)
ID Drain Current (A)
10
Limited
1s
100ms
100m
1ms
100us
10
Limited
1
DC
1s
100ms
1
VDS Drain-Source Voltage (V)
One active die
D=0.5
Single Pulse
D=0.2
20
D=0.05
0
100µ
D=0.1
1m
10m 100m
1
10
100
1k
Max Power Dissipation (W)
Thermal Resistance (°C/W)
R(theta junction-to-ambient), RJA
40
1
10
P-channel Safe Operating Area
80
60
100us
-VDS Drain-Source Voltage (V)
N-channel Safe Operating Area
100
1ms
One active die
0.1
10
10ms
Single Pulse
T amb= 25°C
10m
One active die
0.1
RDS(ON)
100m
10ms
Single Pulse
T amb= 25°C
10m
2.0
1.5
Two active die
One active die
1.0
0.5
0.0
Pulse Width (s)
0
25
50
75
100
125
150
Temperature (°C)
Transient Thermal Impedance
Maximum Power (W)
NEW PRODUCT
RDS(ON)
Derating Curve
Single Pulse
T amb= 25°C
100
One active die
10
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Power Dissipation
DMC4040SSD
Document number: DS32120 Rev. 3 - 2
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DMC4040SSD
NEW PRODUCT
Electrical Characteristics
(Q1 N-Channel) (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
40






1.0
100
V
µA
nA
ID = 250µA, VGS= 0V
VDS= 40V, VGS= 0V
VGS= 20V, VDS= 0V
VGS(th)
0.8
RDS(ON)

Forward Transconductance (Notes 11 & 12)
Diode Forward Voltage (Note 11)
DYNAMIC CHARACTERISTICS (Note 12)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (Note 13)
Total Gate Charge (Note 13)
Gate-Source Charge (Note 13)
Gate-Drain Charge (Note 13)
Turn-On Delay Time (Note 13)
Turn-On Rise Time (Note 13)
Turn-Off Delay Time (Note 13)
Turn-Off Fall Time (Note 13)
Gfs
VSD


1.8
0.025
0.040

1.0
V
Static Drain-Source On-Resistance (Note 11)
1.3
0.013
0.028
12.6
0.7
ID= 250µA, VDS= VGS
VGS= 10V, ID= 3A
VGS= 4.5V, ID= 3A
VDS= 5V, ID= 3A
IS= 1A, VGS= 0V
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf












1,790
160
120
1.03
16.0
37.6
7.8
6.6
8.1
15.1
24.3
5.3












Ω
S
V
pF
Ω
nC
nS
Test Condition
VDS= 20V, VGS= 0V
f= 1MHz
VDS= 0V, VGS= 0V, f= 1MHz
VGS= 4.5V
VDS= 20V
ID= 3A
VGS= 10V
VDD= 20V, VGS= 10V
ID= 3A
Electrical Characteristics (Q2 P-Channel) (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
-40






-1.0
100
V
µA
nA
ID = -250µA, VGS = 0V
VDS = -40V, VGS = 0V
VGS = 20V, VDS = 0V
VGS(th)
RDS(ON)
Forward Transconductance (Notes 11 & 12)
Diode Forward Voltage (Note 11)
DYNAMIC CHARACTERISTICS (Note 12)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (Note 13)
Total Gate Charge (Note 13)
Gate-Source Charge (Note 13)
Gate-Drain Charge (Note 13)
Turn-On Delay Time (Note 13)
Turn-On Rise Time (Note 13)
Turn-Off Delay Time (Note 13)
Turn-Off Fall Time (Note 13)
Gfs
VSD


-1.3
0.018
0.030
16.6
-0.7
-1.8
0.025
0.045
–
-1.0
V
Static Drain-Source On-Resistance (Note 11)
-0.8

ID = -250µA, VDS = VGS
VGS = -10V, ID = -3A
VGS = -4.5V, ID = -3A
VDS = -5V, ID = -3A
IS = -1A, VGS = 0V
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf












1,643
179
128
6.43
14.0
33.7
5.5
7.3
6.9
14.7
53.7
30.9












Notes:
Ω
S
V
pF
Ω
nC
nS
Test Condition
VDS = -20V, VGS = 0V
f = 1MHz
VDS = 0V, VGS = 0V, f = 1MHz
VGS = -4.5V
VDS = -20V
ID = -3A
VGS = -10V
VDD = -20V, VGS = -10V
ID = -3A
11. Measured under pulsed conditions. Pulse width  300µs; duty cycle  2%
12. For design aid only, not subject to production testing.
13. Switching characteristics are independent of operating junction temperatures.
DMC4040SSD
Document number: DS32120 Rev. 3 - 2
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DMC4040SSD
Typical Characteristics (Q1 N-Channel)
30
30
VGS = 8.0V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
VGS = 4.5V
20
VDS = 5V
25
15
VGS = 4.0V
10
20
15
10
VGS = 3.5V
TA = 150°C
5
5
VGS = 2.5V
0.5
1
1.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
2
0.06
0.05
0.04
0.03
VGS = 4.5V
0.02
VGS = 10V
0.01
0
0
5
10
15
20
25
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
TA = 85°C
TA = 25°C
TA = -55°C
0
0
T A = 125°C
VGS = 3.0V
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0
30
0
1
2
3
4
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
5
0.04
VGS = 10V
0.03
TA = 150°C
0.02
TA = 125°C
TA = 85°C
TA = 25°C
0.01
TA = -55°C
0
0
1.7
5
10
15
20
25
ID, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
30
0.06
RDSON, DRAIN-SOURCE ON-RESISTANCE ()
RDSON, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
NEW PRODUCT
25
VGS = 10V
ID = 20A
1.5
1.3
VGS = 4.5V
ID = 10A
1.1
0.9
0.7
0.5
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
DMC4040SSD
Document number: DS32120 Rev. 3 - 2
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0.05
0.04
VGS = 4.5V
ID = 10A
0.03
0.02
VGS = 10V
ID = 20A
0.01
0
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
September 2015
© Diodes Incorporated
20
2.7
18
2.4
16
IS, SOURCE CURRENT (A)
VGS(TH), GATE THRESHOLD VOLTAGE (V)
3.0
2.1
1.8
ID = 1mA
1.5
1.2
ID = 250µA
0.9
0.6
12
10
8
6
4
0
0.2
0
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0.4
0.6
0.8
1.0
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.2
10,000
IDSS, LEAKAGE CURRENT (nA)
10,000
C, CAPACITANCE (pF)
TA = 25°C
14
2
0.3
Ciss
1,000
Coss
Crss
100
1,000
T A = 150°C
TA = 125°C
100
TA = 85°C
10
TA = 25°C
f = 1MHz
10
1
0
5
10
15
20
25
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Total Capacitance
30
0
5
10
15
20
25
30
35
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Leakage Current
vs. Drain-Source Voltage
40
10
VGS, GATE-SOURCE VOLTAGE (V)
NEW PRODUCT
DMC4040SSD
VDS = 20V
ID = 12A
8
6
4
2
0
0
5
10
15
20
25
30
35
Qg, TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
DMC4040SSD
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DMC4040SSD
30
25
25
-ID, DRAIN CURRENT (A)
-ID, DRAIN CURRENT (A)
30
20
15
10
5
VDS = -5V
T A = 85°C
T A = 25°C
20
TA = 150°C
TA = 125°C
TA = -55°C
15
10
5
0
0
0.5
1
1.5
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 Typical Output Characteristic
2
0.05
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0
0.04
VGS = -4.5V
0.03
0.02
VGS = -10V
0.01
0
0
5
10
15
20
25
-ID, DRAIN-SOURCE CURRENT (A)
Fig. 14 Typical On-Resistance
vs. Drain Current and Gate Voltage
30
0
1
2
3
4
-V GS, GATE-SOURCE VOLTAGE (V)
Fig. 13 Typical Transfer Characteristic
5
0.04
VGS = -10V
0.03
TA = 150°C
TA = 125°C
TA = 85°C
0.02
TA = 25°C
TA = -55°C
0.01
0
0
5
10
15
20
25
-ID, DRAIN CURRENT (A)
Fig. 15 Typical On-Resistance
vs. Drain Current and Temperature
30
0.06
R DSON, DRAIN-SOURCE ON-RESISTANCE ()
1.7
RDSON, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
NEW PRODUCT
Typical Characteristics (Q2 P-Channel)
VGS = -10V
ID = -20A
1.5
1.3
VGS = -4.5V
ID = -10A
1.1
0.9
0.7
0.5
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 16 On-Resistance Variation with Temperature
DMC4040SSD
Document number: DS32120 Rev. 3 - 2
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0.05
0.04
VGS = -4.5V
ID = -10A
0.03
0.02
VGS = -10V
ID = -20A
0.01
0
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 17 On-Resistance Variation with Temperature
September 2015
© Diodes Incorporated
DMC4040SSD
-VGS(TH), GATE THRESHOLD VOLTAGE (V)
20
-IS, SOURCE CURRENT (A)
18
1.5
ID = -1mA
1.0
ID = -250µA
0.5
16
TA = 25°C
14
12
10
8
6
4
2
0
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 18 Gate Threshold Variation vs. Ambient Temperature
-IDSS, LEAKAGE CURRENT (nA)
C, CAPACITANCE (pF)
0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 19 Diode Forward Voltage vs. Current
10,000
10,000
Ciss
1,000
Coss
Crss
100
TA = 150°C
1,000
TA = 125°C
100
TA = 85°C
10
TA = 25°C
10
1
0
5
10
15
20
25
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 20 Typical Total Capacitance
30
0
5
10
15
20
25
30
35
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 21 Typical Leakage Current
vs. Drain-Source Voltage
40
10
-VGS, GATE-SOURCE VOLTAGE (V)
NEW PRODUCT
2.0
VDS = -20V
ID = -12A
8
6
4
2
0
0
5
10
15
20
25
30
35
Qg, TOTAL GATE CHARGE (nC)
Fig. 22 Gate-Charge Characteristics
DMC4040SSD
Document number: DS32120 Rev. 3 - 2
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DMC4040SSD
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
0.254
SO-8
NEW PRODUCT
E1 E
SO-8
Dim
Min
Max
A
—
1.75
A1
0.10
0.20
A2
1.30
1.50
A3
0.15
0.25
b
0.3
0.5
D
4.85
4.95
E
5.90
6.10
E1
3.85
3.95
e
1.27 Typ
h
—
0.35
L
0.62
0.82
0°
8°

All Dimensions in mm
Gauge Plane
Seating Plane
A1
L
Detail ‘A’
7°~9°
h
45°
Detail ‘A’
A2 A A3
b
e
D
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
SO-8
X
Dimensions Value (in mm)
X
0.60
Y
1.55
C1
5.4
C2
1.27
C1
C2
Y
DMC4040SSD
Document number: DS32120 Rev. 3 - 2
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DMC4040SSD
IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
NEW PRODUCT
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
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Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
www.diodes.com
DMC4040SSD
Document number: DS32120 Rev. 3 - 2
10 of 10
www.diodes.com
September 2015
© Diodes Incorporated
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