DMC2020USD

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DMC2020USD
20V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
•
•
•
•
•
•
•
•
ID Max
Device
V(BR)DSS
RDS(on) max
TA = 25°C
(Notes 3 & 5)
Q1
Q2
20mΩ @ VGS = 4.5V
8.5A
28mΩ @ VGS = 2.5V
7.2A
33mΩ @ VGS = -4.5V
-6.8A
45mΩ @ VGS = -2.5V
-5.8A
20V
-20V
Mechanical Data
•
•
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
•
•
•
•
Reduced footprint with two discretes in a single SO8
Low gate drive
Low input capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected up to 2kV
“Lead Free”, RoHS Compliant (Note 1)
Halogen and Antimony Free. "Green" Device (Note 1)
Motor control
DC-DC Converters
Power management functions
Notebook Computers and Printers
•
•
•
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Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (approximate)
Drain
Drain
SO-8
S1
ESD PROTECTED TO 2kV
Top View
D1
G1
D1
S2
D2
G2
D2
Body
Diode
Gate
Body
Diode
Gate
Gate
Protection
Diode
Source
Q1 N-Channel
Gate
Protection
Diode
Source
Q2 P-Channel
Equivalent Circuit
Top View
Ordering Information (Note 1)
Product
DMC2020USD-13
Notes:
Marking
C2020UD
Reel size (inches)
13
Tape width (mm)
12
Quantity per reel
2,500
1. No purposefully added lead. Diodes Inc.'s "Green" policy and packaging details can be found on our website at http://www.diodes.com.
Marking Information
C2020UD
YY WW
DMC2020USD
Document number: DS32121 Rev. 4 - 2
= Manufacturer’s Marking
C2020UD = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01 - 53)
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Maximum Ratings @TA = 25°C unless otherwise specified
Symbol
N-Channel - Q1
P-Channel - Q2
Drain-Source Voltage
Characteristic
VDSS
20
-20
Gate-Source Voltage
VGSS
±10
±10
(Notes 3 & 5)
8.5
-6.8
TA = 70°C (Notes 3 & 5)
6.8
-5.4
6.5
7.8
-5.2
-6.3
33.6
-26.8
Continuous Drain Current
VGS = 4.5V
Pulsed Drain Current
VGS = 4.5V
(Notes 2 & 5)
(Notes 2 & 6)
(Notes 4 & 5)
ID
IDM
Continuous Source Current (Body diode)
(Notes 3 & 5)
IS
4.0
-4.0
Pulsed Source Current (Body diode)
(Notes 4 & 5)
ISM
33.6
-26.8
Units
V
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
(Notes 2 & 5)
Power Dissipation
Linear Derating Factor
(Notes 2 & 6)
PD
N-Channel - Q1 P-Channel - Q2
1.25
10
1.8
14.3
Thermal Resistance, Junction to Ambient
(Notes 2 & 5)
(Notes 2 & 6)
(Notes 3 & 5)
RθJA
100
70
58
Thermal Resistance, Junction to Lead
(Notes 5 & 7)
RθJL
51
TJ, TSTG
-55 to +150
Notes:
W
mW/°C
2.14
17.2
(Notes 3 & 5)
Operating and Storage Temperature Range
Unit
°C/W
°C
2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
3. Same as note (2), except the device is measured at t ≤ 10 sec.
4. Same as note (2), except the device is pulsed with D = 0.02 and pulse width 300µs.
5. For a dual device with one active die.
6. For a device with two active die running at equal power.
7. Thermal resistance from junction to solder-point (at the end of the drain lead).
DMC2020USD
Document number: DS32121 Rev. 4 - 2
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Thermal Characteristics
10
RDS(ON)
Limited
-ID Drain Current (A)
ID Drain Current (A)
RDS(ON)
DC
1
1s
100ms
100m
10ms
10m
100us
1s
100ms
1
1ms
100us
One active die
0.1
10
10ms
Single Pulse
T amb= 25°C
10m
One active die
0.1
DC
1
100m
1ms
Single Pulse
T amb= 25°C
Limited
10
VDS Drain-Source Voltage (V)
1
10
-VDS Drain-Source Voltage (V)
N-channel Safe Operating Area
P-channel Safe Operating Area
80
60
25 mm x 25 mm
1oz FR4
One active die
D=0.5
40
Single Pulse
D=0.2
20
D=0.05
0
100µ
D=0.1
1m
10m 100m
1
10
100
1k
Max Power Dissipation (W)
Thermal Resistance (°C/W)
2.0
100
25 mm x 25 mm
1oz FR4
1.5
Two active die
One active die
1.0
0.5
0.0
0
Pulse Width (s)
50
75
100
125
150
Temperature (°C)
Transient Thermal Impedance
Maximum Power (W)
25
Derating Curve
Single Pulse
T amb= 25°C
100
One active die
25 mm x 25 mm
1oz FR4
10
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Power Dissipation
DMC2020USD
Document number: DS32121 Rev. 4 - 2
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Electrical Characteristics – Q1 N-CHANNEL
@TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
20
-
-
1.0
±10
V
μA
μA
VGS = 0V, ID = 250μA
VDS = 20V, VGS = 0V
VGS = ±10V, VDS = 0V
VGS(th)
0.5
RDS (ON)
-
Forward Transfer Admittance (Notes 8 & 9)
Diode Forward Voltage (Note 8)
Continuous Source Current
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (Note 10)
Total Gate Charge (Note 10)
Gate-Source Charge (Note 10)
Gate-Drain Charge (Note 10)
Turn-On Delay Time (Note 10)
Turn-On Rise Time (Note 10)
Turn-Off Delay Time (Note 10)
Turn-Off Fall Time (Note 10)
|Yfs|
VSD
IS
-
1.5
20
28
1.2
1.8
V
Static Drain-Source On-Resistance (Note 8)
1.1
13
18
16
0.7
-
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 7A
VGS = 2.5V, ID = 3A
VDS = 5V, ID = 9.4A
VGS = 0V, IS = 1.3A
-
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
-
1149
157
142
1.51
6.0
11.6
2.7
3.4
11.67
12.49
35.89
12.33
-
mΩ
S
V
A
pF
Ω
nC
ns
Test Condition
VDS = 10V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VGS = 2.5V
VGS = 4.5V
VDS = 10V
ID = 9.4A
VGS = 4.5V, VDS = 10V,
RG = 6Ω , ID = 1A
8. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
9. For design aid only, not subject to production testing.
10. Switching characteristics are independent of operating junction temperatures.
Notes:
Typical Characteristics – Q1 N-CHANNEL
20
30
VGS = 10V
VGS = 4.5V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
25
VGS = 4.0V
20
VGS = 3.5V
VGS = 3.0V
VGS = 2.5V
15
VGS = 2.0V
10
15
VDS = 5V
10
T A = 150°C
5
TA = 125°C
TA = 85°C
5
VGS = 1.8V
0
0
0.5
1
1.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
DMC2020USD
Document number: DS32121 Rev. 4 - 2
TA = 25°C
TA = -55°C
0
2
0
0.5
1
1.5
2
2.5
VGS, GATE SOURCE VOLTAGE (V)
3
Fig. 2 Typical Transfer Characteristics
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0.04
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
DMC2020USD
0.03
0.02
VGS = 2.5V
0.01
0
VGS = 4.5V
0
5
10
15
20
25
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
0.03
0.02
1.2
VGS = 4.5V
ID = 10A
VGS = 2.5V
ID = 5A
0.6
-50
TA = 125°C
T A = 85°C
T A = -55°C
0
5
10
15
20
ID, DRAIN CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
0.04
0.03
VGS = 2.5V
ID = 5A
0.02
VGS = 4.5V
ID = 10A
0.01
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
30
1.6
1.4
25
IS, SOURCE CURRENT (A)
VGS(TH), GATE THRESHOLD VOLTAGE (V)
T A = 25°C
0.01
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
1.2
20
ID = 1mA
1.0
0.8
T A = 150°C
0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.4
0.8
VGS = 4.5V
30
1.6
1.0
0.04
T A = 25°C
15
ID = 250µA
0.6
10
0.4
5
0.2
0
0
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
DMC2020USD
Document number: DS32121 Rev. 4 - 2
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0
0.2
0.4
0.6
0.8
1.0
1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
February 2011
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IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA)
10,000
C, CAPACITANCE (pF)
f = 1MHz
1,000
Ciss
Coss
Crss
100
10
0
4
8
12
16
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Capacitance
100,000
10,000
20
1,000
TA = 150°C
T A = 125°C
100
TA = 85°C
10
TA = 25°C
1
0
5
10
15
20
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Drain-Source Leakage Current
vs. Drain-Source Voltage
VGS, GATE-SOURCE VOLTAGE (V)
10
VDS = 10V
ID = 9.4A
8
6
4
2
0
0
5
10
15
20
25
Qg, TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Source Voltage vs. Total Gate Charge
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Electrical Characteristics – Q2 P-CHANNEL
@TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
-20
-
-
-1.0
±10
V
μA
μA
VGS = 0V, ID = -250μA
VDS = -20V, VGS = 0V
VGS = ±8V, VDS = 0V
VGS(th)
-0.4
RDS (ON)
-
Forward Transfer Admittance (Note 11 & 12)
Diode Forward Voltage (Note 11)
Continuous Source Current
DYNAMIC CHARACTERISTICS (Note 12)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (Note 13)
Total Gate Charge (Note 13)
Gate-Source Charge (Note 13)
Gate-Drain Charge (Note 13)
Turn-On Delay Time (Note 13)
Turn-On Rise Time (Note 13)
Turn-Off Delay Time (Note 13)
Turn-Off Fall Time (Note 13)
|Yfs|
VSD
IS
-
-1.0
33
45
-1.0
-1.8
V
Static Drain-Source On-Resistance (Note 11)
-0.7
26
33
14
-0.7
-
VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -6A
VGS = -2.5V, ID = -3A
VDS = -5V, ID = -4A
VGS = 0V, IS = -1A
-
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
-
1610
157
145
9.45
8.0
15.4
2.5
3.3
16.8
12.4
94.1
42.4
-
mΩ
S
V
A
pF
Ω
nC
ns
Test Condition
VDS = -10V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VGS = -2.5V
VDS = -10V
ID = -4A
VGS = -4.5V
VGS = -4.5V, VDS = -10V,
RG = 6Ω , ID = -1A
11. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
12. For design aid only, not subject to production testing.
13. Switching characteristics are independent of operating junction temperatures.
Notes:
Typical Characteristics – Q2 P-CHANNEL
20
30
VGS = -10V
VDS = -5V
VGS = -3.0V
VGS = -4.5V
VGS = -4.0V
20
VGS = -2.5V
-ID, DRAIN CURRENT (A)
25
-ID, DRAIN CURRENT (A)
VGS = -3.5V
VGS = -2.0V
15
10
VGS = -1.8V
15
10
TA = 150°C
5
T A = 125°C
5
TA = 85°C
0
0
0
0.5
1.0
1.5
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 Typical Output Characteristics
DMC2020USD
Document number: DS32121 Rev. 4 - 2
2.0
T A = 25°C
TA = -55°C
0
0.5
1
1.5
2
2.5
-VGS, GATE SOURCE VOLTAGE (V)
3
Fig. 13 Typical Transfer Characteristics
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0.06
0.05
0.04
-VGS = 2.5V
0.03
-VGS = 4.5V
0.02
0.01
0
0
5
10
15
20
25
-ID, DRAIN-SOURCE CURRENT (A)
Fig. 14 Typical On-Resistance
vs. Drain Current and Gate Voltage
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.4
1.2
-VGS = 4.5V
-ID = 10A
0.8
-VGS = 2.5V
-ID = 5A
0.6
-50
0.04
TA = 125°C
0.02
0
0.04
0.03
0.01
-IS, SOURCE CURRENT (A)
VGS(TH), GATE THRESHOLD VOLTAGE (V)
-VGS = 4.5V
-ID = 10A
0.02
0
-50
20
TA = 25°C
15
10
5
0
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 18 Gate Threshold Variation vs. Ambient Temperature
Document number: DS32121 Rev. 4 - 2
-VGS = 2.5V
-ID = 5A
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 17 On-Resistance Variation with Temperature
0.2
DMC2020USD
5
10
15
20
-ID, DRAIN CURRENT (A)
Fig. 15 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
0.05
25
-I D = 250µA
0
0.06
1.0
0.4
TA = -55°C
0.01
30
-I D = 1mA
TA = 85°C
TA = 25°C
1.2
0.6
TA = 150°C
0.03
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 16 On-Resistance Variation with Temperature
0.8
VGS = 4.5V
0.05
30
1.6
1.0
0.06
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
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0
0
0.2
0.4
0.6
0.8
1.0
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 19 Diode Forward Voltage vs. Current
1.2
February 2011
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-IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA)
DMC2020USD
10,000
C, CAPACITANCE (pF)
f = 1MHz
Ciss
1,000
Coss
100
Crss
10
0
4
8
12
16
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 20 Typical Capacitance
100,000
10,000
20
TA = 150°C
TA = 125°C
1,000
100
TA = 85°C
10
TA = 25°C
1
0
5
10
15
20
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 21 Typical Drain-Source Leakage Current
vs. Drain-Source Voltage
-VGS, GATE-SOURCE VOLTAGE (V)
10
VDS = -10V
ID = -4A
8
6
4
2
0
0
5
10
15
20
25
30
35
Qg, TOTAL GATE CHARGE (nC)
Fig. 22 Gate-Source Voltage vs. Total Gate Charge
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h x 45°
Package Outline Dimensions
DIM
Inches
Millimeters
DIM
Inches
Min.
Millimeters
Max.
Max.
Min.
Max.
A
0.053
0.069
1.35
1.75
e
A1
0.004
0.010
0.10
0.25
b
0.013
0.020
0.33
0.51
D
0.189
0.197
4.80
5.00
c
0.008
0.010
0.19
0.25
H
0.228
0.244
5.80
6.20
θ
0°
8°
0°
8°
E
0.150
0.157
3.80
4.00
h
0.010
0.020
0.25
0.50
L
0.016
0.050
0.40
1.27
-
-
-
-
-
0.050 BSC
Min.
Max.
Min.
1.27 BSC
Suggested Pad Layout
1.52
0.060
7.0
0.275
4.0
0.155
0.6
0.024
1.27
0.050
mm
inches
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IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2011, Diodes Incorporated
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