TZX-Series Vishay Semiconductors Small Signal Zener Diodes Features • • • • • • Very sharp reverse characteristic Low reverse current level e2 Very high stability Low noise Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 94 9367 Applications • Voltage stabilization Mechanical Data Case: DO35 Glass case Weight: approx. 125 mg Cathode Band Color: black Packaging codes/options: TAP/10 k per Ammopack (52 mm tape), 30 k/box Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Symbol Value Unit Ptot 500 mW Z-current IZ Ptot/VZ mA Junction temperature Tj 175 °C Tstg - 65 to + 175 °C Power dissipation Test condition l = 4 mm, TL = 25 °C Storage temperature range Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Thermal resistance junction to ambient air l = 4 mm, TL = constant Symbol Value Unit RthJA 300 K/W Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Forward voltage Document Number 85614 Rev. 2.1, 27-Mar-07 Test condition IF = 200 mA Symbol VF Min Typ. Max Unit 1.5 V www.vishay.com 1 TZX-Series Vishay Semiconductors Electrical Characteristics Partnumber Partnumber group TZX2V4 TZX2V7 TZX3V0 TZX3V3 TZX3V6 TZX3V9 TZX4V3 TZX4V7 TZX5V1 TZX5V6 TZX6V2 TZX6V8 Dynamic Resistance Test Current VZ at IZ rZ at IZ IZ mA V V Ω min max max Reverse Leakage Current IR at VR µA V max IR1) at VR1) µA V max TZX2V4A 2.3 2.5 100 5 5 0.5 50 1 TZX2V4B 2.4 2.6 100 5 5 0.5 50 1 TZX2V7A 2.5 2.7 100 5 5 0.5 10 1 TZX2V7B 2.6 2.8 100 5 5 0.5 10 1 TZX2V7C 2.7 2.9 100 5 5 0.5 10 1 TZX3V0A 2.8 3 100 5 5 0.5 6 1 TZX3V0B 2.9 3.1 100 5 5 0.5 6 1 1 TZX3V0C 3 3.2 100 5 5 0.5 6 TZX3V3A 3.1 3.3 100 5 5 1 2 1 TZX3V3B 3.2 3.4 100 5 5 1 2 1 1 TZX3V3C 3.3 3.5 100 5 5 1 2 TZX3V6A 3.4 3.6 100 5 5 1 2 1 TZX3V6B 3.5 3.7 100 5 5 1 2 1 1 TZX3V6C 3.6 3.8 100 5 5 1 2 TZX3V9A 3.7 3.9 100 5 5 1 2 1 TZX3V9B 3.8 4 100 5 5 1 2 1 TZX3V9C 3.9 4.1 100 5 5 1 2 1 TZX4V3A 4 4.2 100 5 5 1.5 1 1 TZX4V3B 4.1 4.3 100 5 5 1.5 1 1 TZX4V3C 4.2 4.4 100 5 5 1.5 1 1 TZX4V3D 4.3 4.5 100 5 5 1.5 1 1 TZX4V7A 4.4 4.6 100 5 5 2 6 2 TZX4V7B 4.5 4.7 100 5 5 2 5 2 TZX4V7C 4.6 4.8 100 5 5 2 4 2 TZX4V7D 4.7 4.9 100 5 5 2 3 2 TZX5V1A 4.8 5 100 5 5 2 2 2 TZX5V1B 4.9 5.1 100 5 5 2 2 2 TZX5V1C 5 5.2 100 5 5 2 2 2 TZX5V1D 5.1 5.3 100 5 5 2 2 2 TZX5V6A 5.2 5.5 40 5 5 2 1 2 TZX5V6B 5.3 5.6 40 5 5 2 1 2 TZX5V6C 5.4 5.7 40 5 5 2 1 2 TZX5V6D 5.5 5.8 40 5 5 2 1 2 TZX5V6E 5.6 5.9 40 5 5 2 1 2 TZX6V2A 5.7 6 15 5 1 3 3 4 TZX6V2B 5.8 6.1 15 5 1 3 3 4 TZX6V2C 6 6.3 15 5 1 3 3 4 TZX6V2D 6.1 6.4 15 5 1 3 3 4 TZX6V2E 6.3 6.6 15 5 1 3 3 4 TZX6V8A 6.4 6.7 15 5 1 3.5 2 4 TZX6V8B 6.6 6.9 15 5 1 3.5 2 4 TZX6V8C 6.7 7 15 5 1 3.5 2 4 TZX6V8D 6.9 7.2 15 5 1 3.5 2 4 www.vishay.com 2 Zener Voltage Document Number 85614 Rev. 2.1, 27-Mar-07 TZX-Series Vishay Semiconductors Partnumber Partnumber group TZX7V5 TZX8V2 TZX9V1 TZX10 TZX11 TZX12 TZX13 TZX14 TZX15 TZX16 TZX18A TZX20A Zener Voltage Dynamic Resistance Test Current VZ at IZ rZ at IZ IZ mA Reverse Leakage Current IR at VR µA V IR1) at VR1) µA V V V Ω min max max TZX7V5A 7 7.3 15 5 1 5 30 6.65 TZX7V5B 7.2 7.6 15 5 1 5 30 6.84 TZX7V5C 7.3 7.7 15 5 1 5 30 6.94 TZX7V5D 7.5 7.9 15 5 1 5 30 7.13 TZX7V5X 7.07 7.45 15 5 1 5 30 6.72 TZX8V2A 7.7 8.1 20 5 1 6.2 0.1 7.32 TZX8V2B 7.9 8.3 20 5 1 6.2 0.1 7.5 TZX8V2C 8.1 8.5 20 5 1 6.2 0.1 7.7 TZX8V2D 8.3 8.7 20 5 1 6.2 0.1 7.98 TZX9V1A 8.5 8.9 20 5 1 6.8 0.04 8.08 TZX9V1B 8.7 9.1 20 5 1 6.8 0.04 8.27 TZX9V1C 8.9 9.3 20 5 1 6.8 0.04 8.46 TZX9V1D 9.1 9.5 20 5 1 6.8 0.04 8.65 TZX9V1E 9.3 9.7 20 5 1 6.8 0.04 8.84 max max TZX10A 9.5 9.9 25 5 1 7.5 0.04 9.03 TZX10B 9.7 10.1 25 5 1 7.5 0.04 9.22 TZX10C 9.9 10.3 25 5 1 7.5 0.04 9.41 TZX10D 10.2 10.6 25 5 1 7.5 0.04 9.69 TZX11A 10.4 10.8 25 5 1 8.2 0.04 9.88 TZX11B 10.7 11.1 25 5 1 8.2 0.04 10.2 TZX11C 10.9 11.3 25 5 1 8.2 0.04 10.4 TZX11D 11.1 11.6 25 5 1 8.2 0.04 10.5 TZX12A 11.4 11.9 35 5 1 9.5 0.04 10.8 TZX12B 11.6 12.1 35 5 1 9.5 0.04 11 TZX12C 11.9 12.4 35 5 1 9.5 0.04 11.3 TZX12D 12.2 12.7 35 5 1 9.5 0.04 11.6 TZX12X 11.44 12.03 35 5 1 9.5 0.04 10.9 11.8 TZX13A 12.4 12.9 35 5 1 10 0.04 TZX13B 12.6 13.1 35 5 1 10 0.04 12 TZX13C 12.9 13.4 35 5 1 10 0.04 12.3 TZX14A 13.2 13.7 35 5 1 11 0.04 12.5 TZX14B 13.5 14 35 5 1 11 0.04 12.8 TZX14C 13.8 14.3 35 5 1 11 0.04 13.1 TZX15A 14.1 14.7 40 5 1 11.5 0.04 13.4 13.8 TZX15B 14.5 15.1 40 5 1 11.5 0.04 TZX15C 14.9 15.5 40 5 1 11.5 0.04 14.2 TZX15X 14.35 15.09 40 5 1 11.5 0.04 13.6 TZX16A 15.3 15.9 45 5 1 12 0.04 14.5 TZX16B 15.7 16.5 45 5 1 12 0.04 14.9 TZX16C 16.3 17.1 45 5 1 12 0.04 15.5 TZX18A 16.9 17.7 55 5 1 13 0.04 16.1 16.6 TZX18B 17.5 18.3 55 5 1 13 0.04 TZX18C 18.1 19 55 5 1 13 0.04 17.2 TZX20A 18.8 19.7 60 2 1 15 0.04 17.9 TZX20B 19.5 20.4 60 2 1 15 0.04 18.5 TZX20C 20.2 21.2 60 2 1 15 0.04 19.2 Document Number 85614 Rev. 2.1, 27-Mar-07 www.vishay.com 3 TZX-Series Vishay Semiconductors Partnumber Partnumber group TZX22 TZX24 TZX27 TZX30 TZX33 TZX36 1) Zener Voltage Dynamic Resistance Test Current VZ at IZ rZ at IZ IZ mA Reverse Leakage Current IR at VR µA V IR1) at VR1) µA V V V Ω min max max TZX22A 20.9 21.9 65 2 1 17 0.04 19.9 TZX22B 21.6 22.6 65 2 1 17 0.04 20.5 TZX22C 22.3 23.3 65 2 1 17 0.04 21.2 TZX24A 22.9 24 70 2 1 19 0.04 21.8 22.4 max max TZX24B 23.6 24.7 70 2 1 19 0.04 TZX24C 24.3 25.5 70 2 1 19 0.04 23.1 TZX24X 22.61 23.77 70 2 1 19 0.04 21.5 TZX27A 25.2 26.6 80 2 1 21 0.04 23.9 TZX27B 26.2 27.6 80 2 1 21 0.04 24.9 TZX27C 27.2 28.6 80 2 1 21 0.04 25.8 TZX27X 26.99 28.39 80 2 1 21 0.04 25.6 TZX30A 28.2 29.6 100 2 1 23 0.04 26.8 TZX30B 29.2 30.6 100 2 1 23 0.04 27.7 TZX30C 30.2 31.6 100 2 1 23 0.04 28.7 TZX30X 29.02 30.51 100 2 1 23 0.04 27.6 TZX33A 31.2 32.6 120 2 1 25 0.04 29.6 30.6 TZX33B 32.2 33.6 120 2 1 25 0.04 TZX33C 33.2 34.5 120 2 1 25 0.04 31.5 TZX36A 34.2 35.7 140 2 1 27 0.04 32.5 33.5 TZX36B 35.3 36.8 140 2 1 27 0.04 TZX36C 36.4 38 140 2 1 27 0.04 34.6 TZX36X 35.36 37.19 140 2 1 27 0.04 33.6 Additional measurement NOTE: Additional measurement of voltage group TZM9V1 to TZX36, IR at 95 % VZmin ≤ 40 nA at Tj = 25 °C Typical Characteristics 500 400 300 l l 200 100 TL = constant 0 0 15 20 I - Lead Length (mm) 95 9611 5 10 Figure 1. Thermal Resistance vs. Lead Length www.vishay.com 4 Ptot - Total Power Dissipation (mW) RthJA - Therm. Resist. Junction Ambient (K/W) Tamb = 25 °C, unless otherwise specified 600 500 400 300 200 100 95 9602 0 0 40 80 120 160 200 Tamb - Ambient Temperature (°C) Figure 2. Total Power Dissipation vs. Ambient Temperature Document Number 85614 Rev. 2.1, 27-Mar-07 TZX-Series Vishay Semiconductors 200 CD - Diode Capacitance (pF) VZ - Voltage Change (mV) 1000 Tj = 25 °C 100 IZ = 5 mA 10 0 5 10 15 100 50 0 25 20 VZ - Z-Voltage (V) 95 9598 10 5 15 25 20 VZ - Z-Voltage (V) 95 9601 Figure 6. Diode Capacitance vs. Z-Voltage Figure 3. Typical Change of Working Voltage under Operating Conditions at Tamb = 25 °C 100 1.3 VZtn = VZt/VZ (25 °C) 1.2 TKVZ = 10 x 10-4/K 8 x 10-4/K 6 x 10-4/K 1.1 -4 4 x 10 /K 2 x 10-4/K 1.0 0 - 2 x 10-4/K - 4 x 10-4/K 0.9 0.8 - 60 95 9599 IF - Forward Current (mA) VZtn - Relative Voltage Change VR = 2 V Tj = 25 °C 0 1 10 Tj = 25 °C 1 0.1 0.01 0.001 0 60 120 180 240 Tj - Junction Temperature (°C) 0 0.2 0.4 0.6 1.0 0.8 VF - Forward Voltage (V) 95 9605 Figure 4. Typical Change of Working Voltage vs. Junction Temperature Figure 7. Forward Current vs. Forward Voltage 15 100 80 10 IZ - Z-Current (mA) TKVZ - Temperature Coefficient of VZ (10-4/K) 150 5 IZ = 5 mA 0 -5 Ptot = 500 mW Tamb = 25 °C 60 40 20 0 0 10 95 9600 20 40 30 VZ - Z-Voltage (V) 50 Figure 5. Temperature Coefficient of Vz vs. Z-Voltage Document Number 85614 Rev. 2.1, 27-Mar-07 0 95 9604 4 6 8 12 20 VZ - Z-Voltage (V) Figure 8. Z-Current vs. Z-Voltage www.vishay.com 5 TZX-Series Vishay Semiconductors Ptot = 500 mW Tamb = 25 °C 40 IZ - Z-Current (mA) rZ - Differential Z-Resistance (Ω) 50 30 20 10 0 15 20 95 9607 25 IZ = 1 mA 100 5 mA 10 10 mA Tj = 25 °C 1 35 30 0 5 95 9606 VZ - Z-Voltage (V) Figure 9. Z-Current vs. Z-Voltage Zthp - Thermal Resistance for Pulse Cond. (KW) 1000 10 15 20 25 VZ - Z-Voltage (V) Figure 10. Differential Z-Resistance vs. Z-Voltage 1000 tP/T = 0.5 100 tP/T = 0.2 Single Pulse 10 RthJA = 300 K/W T = Tjmax - Tamb tP/T = 0.01 tP/T = 0.1 tP/T = 0.02 tP/T = 0.05 1 10-1 iZM = (- VZ + (VZ2 + 4rzj x T/Zthp) 1/2)/(2rzj) 100 95 9603 101 102 tP - Pulse Length (ms) Figure 11. Thermal Response Package Dimensions in millimeters (inches): DO35 3.9 max. (0.154) 26 min. (1.024) 1.5 (0.059) 26 min. (1.024) 1.7 (0.067) 0.55 max. (0.022) Cathode Identification Rev. 6 - Date: 29. January 2007 Document no.: 6.560-5004.02-4 94 9366 www.vishay.com 6 Document Number 85614 Rev. 2.1, 27-Mar-07 TZX-Series Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 85614 Rev. 2.1, 27-Mar-07 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1