VISHAY SI7844DP

Si7844DP
New Product
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
ID (A)
rDS(on) (W)
30
0.022 @ VGS = 10 V
10
0.030 @ VGS = 4.5 V
8.5
D1
D1
D2
D2
PowerPAKt
S1
6.15 mm
5.15 mm
1
G1
2
S2
3
G1
G2
G2
4
D1
8
D1
7
D2
6
D2
S1
S2
N-Channel MOSFET
N-Channel MOSFET
5
Bottom View
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
"20
Continuous Drain Current (TJ = 150_C)
_ a
TA = 25_C
TA = 70_C
Pulsed Drain Current
IS
TA = 25_C
Maximum Power Dissipationa
TA = 70_C
Operating Junction and Storage Temperature Range
PD
6.4
8.0
IDM
Continuous Source Current (Diode Conduction)a
V
10
ID
5.1
A
20
2.9
1.1
3.5
1.4
2.2
0.9
TJ, Tstg
Unit
W
_C
–55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol
t v 10 sec
Maximum Junction-to-Ambienta
Maximum Junction-to-Case (Drain)
Steady State
Steady State
RthJA
RthJC
Typical
Maximum
26
35
60
85
3.9
5.5
Unit
_C/W
C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71328
S-02456—Rev. A, 06-Nov-00
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1
Si7844DP
New Product
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
VGS(th)
VDS = VGS, ID = 250 mA
0.8
IGSS
VDS = 0 V, VGS = "20 V
"100
VDS = 24 V, VGS = 0 V
1
VDS = 24 V, VGS = 0 V, TJ = 55_C
5
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
VDS w 5 V, VGS = 10 V
rDS(on)
Forward Transconductancea
Diode Forward Voltagea
V
nA
m
mA
20
A
VGS = 10 V, ID = 10 A
0.018
0.022
VGS = 4.5 V, ID = 8.5 A
0.024
0.030
gfs
VDS = 15 V, ID = 10 A
22
VSD
IS = 2.9 A, VGS = 0 V
0.75
1.2
13
20
W
S
V
Dynamicb
Total Gate Charge
Qg
VDS = 15 V, VGS = 10 V, ID = 10 A
nC
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
2.7
Turn-On Delay Time
td(on)
8
16
10
20
21
40
10
20
40
80
Rise Time
tr
Turn-Off Delay Time
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
2
IF = 2.9 A, di/dt = 100 A/ms
ns
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
20
20
3V
VGS = 10 thru 4 V
16
I D – Drain Current (A)
I D – Drain Current (A)
16
12
8
4
12
8
TC = 125_C
4
25_C
2V
–55_C
0
0.0
0.5
1.0
1.5
2.0
2.5
VDS – Drain-to-Source Voltage (V)
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2
3.0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VGS – Gate-to-Source Voltage (V)
Document Number: 71328
S-02456—Rev. A, 06-Nov-00
Si7844DP
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Capacitance
1000
0.032
800
C – Capacitance (pF)
r DS(on) – On-Resistance ( W )
On-Resistance vs. Drain Current
0.040
VGS = 4.5 V
0.024
VGS = 10 V
0.016
0.008
Ciss
600
400
Coss
Crss
200
0.000
0
0
4
8
12
16
20
0
6
ID – Drain Current (A)
Gate Charge
24
30
On-Resistance vs. Junction Temperature
1.6
VDS = 15 V
ID = 10 A
r DS(on) – On-Resistance ( W)
(Normalized)
V GS – Gate-to-Source Voltage (V)
18
VDS – Drain-to-Source Voltage (V)
10
8
6
4
2
VGS = 10 V
ID = 10 A
1.4
1.2
1.0
0.8
0
0
3
6
9
12
0.6
–50
15
–25
0
Qg – Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
50
75
100
125
150
On-Resistance vs. Gate-to-Source Voltage
0.04
r DS(on) – On-Resistance ( W )
TJ = 150_C
10
TJ = 25_C
1
0.0
25
TJ – Junction Temperature (_C)
20
I S – Source Current (A)
12
ID = 10 A
0.03
0.02
0.01
0.00
0.2
0.4
0.6
0.8
1.0
VSD – Source-to-Drain Voltage (V)
Document Number: 71328
S-02456—Rev. A, 06-Nov-00
1.2
0
2
4
6
8
10
VGS – Gate-to-Source Voltage (V)
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Si7844DP
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.4
100
80
ID = 250 mA
–0.0
Power (W)
V GS(th) Variance (V)
0.2
–0.2
60
40
–0.4
20
–0.6
–0.8
–50
–25
0
25
50
75
100
125
0
0.001
150
0.01
1
0.1
10
Time (sec)
TJ – Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 60_C/W
3. TJM – TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10–4
10–3
10–2
10–1
1
Square Wave Pulse Duration (sec)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Case
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10–5
10–4
10–3
10–2
10–1
1
Square Wave Pulse Duration (sec)
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Document Number: 71328
S-02456—Rev. A, 06-Nov-00