DMS3019SSD

DMS3019SSD
ASYMMETRIC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Mechanical Data
•
•
•
•
•
•
DIOFET utilize a unique patented process to monolithically
integrate a MOSFET and a Schottky in a single die to deliver:
•
Low RDS(on) – minimizes conduction loss
•
Low VSD – reducing the losses due to body diode
construction
•
Low Qrr – lower Qrr of the integrated Schottky reduces body
diode switching losses
•
Low gate capacitance (Qg/Qgs) ratio – reduces risk of shootthrough or cross conduction currents at high frequencies
•
Avalanche rugged – IAR and EAR rated
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
•
•
•
D2
G2
D2
S2/D1
G1
S2/D1
S1
S2/D1
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Weight: 0.072 grams (approximate)
Q1
Q2
D1
D2
G1
G2
S1
S2
N-Channel MOSFET +
Integrated Schottky Diode
Top View
Internal Schematic
Top View
N-Channel MOSFET
Ordering Information (Note 3)
Part Number
DMS3019SSD-13
Notes:
Case
SO-8
Packaging
2500 / Tape & Reel
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
Top View
8
5
Logo
S3019SD
Part no.
YY WW
Week: 01 ~ 53
Year: “09” = 2009
1
DMS3019SSD
Document number: DS35053 Rev. 2 - 2
4
1 of 10
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October 2010
© Diodes Incorporated
DMS3019SSD
Maximum Ratings – Q1 @TA = 25°C unless otherwise specified
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 4) VGS = 10V
Steady
State
Continuous Drain Current (Note 5) VGS = 10V
Steady
State
Continuous Drain Current (Note 5) VGS = 4.5V
Steady
State
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
Pulsed Drain Current (Note 6)
Avalanche Current (Notes 6 & 7)
Repetitive Avalanche Energy (Notes 6 & 7) L = 0.3mH
ID
Value
30
±12
7.0
5.6
ID
9.0
7.0
ID
IDM
IAR
EAR
8.0
6.5
40
13
25.4
Unit
V
V
A
A
A
A
A
mJ
Maximum Ratings – Q2 @TA = 25°C unless otherwise specified
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 4) VGS = 10V
Steady
State
Continuous Drain Current (Note 5) VGS = 10V
Steady
State
Continuous Drain Current (Note 5) VGS = 4.5V
Steady
State
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
Pulsed Drain Current (Note 6)
Avalanche Current (Notes 6 & 7)
Repetitive Avalanche Energy (Notes 6 & 7) L = 0.1mH
ID
Value
30
±20
5.7
4.6
ID
7.0
5.6
Unit
V
V
A
A
EAR
6.0
4.7
40
16
12.8
A
A
mJ
Symbol
PD
RθJA
PD
RθJA
TJ, TSTG
Value
1.19
107
1.79
70
-55 to +150
Unit
W
°C/W
W
°C/W
°C
ID
ID
IAR
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 4)
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 5)
Operating and Storage Temperature Range
Notes:
4. Device mounted on FR-4 substrate PC board, with minimum recommended pad layout. The value in any given application depends on the user’s specific
board design. Device contains two active die running at equal power.
5. Device mounted on 1 inch x 1 inch FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Device contains two active die running
at equal power.
6. Repetitive rating, pulse width limited by junction temperature.
7. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = 25°C
DMS3019SSD
Document number: DS35053 Rev. 2 - 2
2 of 10
www.diodes.com
October 2010
© Diodes Incorporated
DMS3019SSD
Electrical Characteristics – Q1 @ TA = 25°C unless otherwise stated
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
30
-
-
0.1
±100
V
mA
nA
VGS = 0V, ID = 1mA
VDS = 30V, VGS = 0V
VGS = ±12V, VDS = 0V
VGS(th)
1.0
-
2.4
V
RDS (ON)
-
10
12
15
18
mΩ
|Yfs|
VSD
-
5
0.4
1
S
V
VDS = VGS, ID = 250μA
VGS = 10V, ID = 9A
VGS = 4.5V, ID = 7A
VDS = 5V, ID = 9A
VGS = 0V, IS = 1A
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
-
1932
154
121
2.7
18.1
42.0
4.5
4.0
6.16
7.22
36.76
5.38
-
pF
Ω
nC
ns
Test Condition
VDS = 15V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VDS = 15V, VGS = 4.5V, ID = 9A
VDS = 15V, VGS = 10V, ID = 9A
VGS = 10V, VDS = 15V,
RG = 3Ω, RL = 1.7Ω
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
30
30
VGS = 4.5V
VGS = 3.5V
20
ID , DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
25
VGS = 4.0V
25
VGS = 3.0V
15
VGS = 2.5V
10
VDS = 5V
20
15
VGS = 150°C
10
VGS = 125°C
VGS = 85°C
5
5
VGS = 25°C
VGS = 2.0V
0
VGS = 2.2V
VGS = -55°C
0
0
0.5
1
1.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
DMS3019SSD
Document number: DS35053 Rev. 2 - 2
2
0
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0.5
1
1.5
2
2.5
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
3
October 2010
© Diodes Incorporated
0.04
0.03
0.02
VGS = 4.5V
0.01
VGS = 10V
0
0
5
10
15
20
25
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
RDSON, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
VGS = 4.5V
0.03
VGS = 4.5V
ID = 10A
1.4
VGS = 10V
ID = 20A
1.2
1.0
0.8
TA = 125°C
TA = 85°C
TA = -55°C
0
0
5
10
15
20
25
ID, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
30
0.03
0.02
VGS = 4.5V
ID = 10A
0.01
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
VGS = 10V
ID = 20A
0
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
20
3.0
2.5
16
2.0
ID = 100mA
1.0
0.5
0
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
DMS3019SSD
Document number: DS35053 Rev. 2 - 2
IS, SOURCE CURRENT (A)
VGS(TH), GATE THRESHOLD VOLTAGE (V)
TA = 25°C
0.01
Fig. 5 On-Resistance Variation with Temperature
1.5
TA = 150°C
0.02
30
1.6
0.6
-50
0.04
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0.05
RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
DMS3019SSD
TA = 25°C
12
8
4
0
0
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0.2
0.4
0.6
0.8
1.0
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.2
October 2010
© Diodes Incorporated
DMS3019SSD
10,000
10,000
f = 1MHz
IDSS, LEAKAGE CURRENT (µA)
C, CAPACITANCE (pF)
T A = 125°C
Ciss
1,000
Coss
Crss
100
10
1,000
TA = 85°C
100
10
TA = 25°C
1
0
5
10
15
20
25
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Total Capacitance
0
30
10
20
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Leakage Current
vs. Drain-Source Voltage
30
VGS, GATE-SOURCE VOLTAGE (V)
10
VDS = 15V
ID = 12.7A
8
6
4
2
0
0
5
10 15 20 25 30 35 40
Qg, TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
DMS3019SSD
Document number: DS35053 Rev. 2 - 2
45
5 of 10
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October 2010
© Diodes Incorporated
DMS3019SSD
Electrical Characteristics – Q2 @ TA = 25°C unless otherwise stated
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
30
-
-
1.0
±100
V
μA
nA
VGS = 0V, ID = 250μA
VDS = 30V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS(th)
1.0
-
2.4
V
RDS (ON)
-
15
25
23
33
mΩ
|Yfs|
VSD
-
2.5
0.65
1.0
S
V
VDS = VGS, ID = 250μA
VGS = 10V, ID = 10A
VGS = 4.5V, ID = 7.5A
VDS = 5V, ID = 10A
VGS = 0V, IS = 1A
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
0.4
-
478.9
96.7
61.4
1.1
5.0
10.5
1.8
1.6
2.9
7.9
14.6
3.1
1.6
-
pF
Ω
nC
ns
Test Condition
VDS = 15V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VDS = 15V, VGS = 4.5V, ID = 10A
VDS = 15V, VGS = 10V, ID = 10A
VGS = 10V, VDS = 15V,
RG = 3Ω, RL = 1.5Ω
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
20
30
VGS = 10V
VDS = 5V
VGS = 4.5V
20
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
25
VGS = 4.0V
VGS = 3.5V
15
10
5
15
10
VGS = 150°C
VGS = 125°C
VGS = 85°C
5
VGS = 3.0V
VGS = 25°C
VGS = 2.5V
VGS = -55°C
0
0
0
0.5
1
1.5 2 2.5 3 3.5 4 4.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 Typical Output Characteristic
DMS3019SSD
Document number: DS35053 Rev. 2 - 2
5
0
6 of 10
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0.5
1
1.5
2
2.5
3
3.5
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 13 Typical Transfer Characteristic
4
October 2010
© Diodes Incorporated
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0.05
0.04
0.03
VGS = 4.5V
0.02
VGS = 10V
0.01
0
0
5
10
15
20
25
ID, DRAIN-SOURCE CURRENT (A)
Fig. 14 Typical On-Resistance
vs. Drain Current and Gate Voltage
RDSON, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.7
VGS = 4.5V
ID = 5A
1.5
VGS = 10V
ID = 10A
1.3
1.1
0.9
0.7
0.5
-50
0.04
VGS = 10V
0.03
TA = 85°C
0.02
TA = 25°C
TA = -55°C
0.01
0
0
5
10
15
20
25
ID, DRAIN CURRENT (A)
Fig. 15 Typical On-Resistance
vs. Drain Current and Temperature
30
0.06
0.05
0.04
VGS = 4.5V
ID = 5A
0.03
0.02
VGS = 10V
ID = 10A
0.01
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
0
-50
Fig. 16 On-Resistance Variation with Temperature
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 17 On-Resistance Variation with Temperature
20
2.0
18
1.8
16
1.6
ID = 1mA
1.4
1.2
ID = 250µA
1.0
IS, SOURCE CURRENT (A)
VGS(TH), GATE THRESHOLD VOLTAGE (V)
TA = 150°C
TA = 125°C
30
RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
DMS3019SSD
14
12
TA = 25°C
10
8
6
4
0.8
2
0.6
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 18 Gate Threshold Variation vs. Ambient Temperature
DMS3019SSD
Document number: DS35053 Rev. 2 - 2
0
0.2
7 of 10
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0.4
0.6
0.8
1.0
1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 19 Diode Forward Voltage vs. Current
October 2010
© Diodes Incorporated
DMS3019SSD
10,000
1,000
f = 1MHz
100
IDSS, LEAKAGE CURRENT (nA)
C, CAPACITANCE (pF)
Ciss
Coss
Crss
T A = 150°C
1,000
T A = 125°C
100
T A = 85°C
10
TA = 25°C
1
10
0
5
10
15
20
25
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 20 Typical Total Capacitance
0
30
5
10
15
20
25
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 21 Typical Leakage Current
vs. Drain-Source Voltage
30
VGS, GATE-SOURCE VOLTAGE (V)
10
8
VDS = 15V
ID = 10A
6
4
2
0
0
2
4
6
8
10
Qg, TOTAL GATE CHARGE (nC)
Fig. 22 Gate-Charge Characteristics
12
r(t), TRANSIENT THERMAL RESISTANCE
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
RθJA (t) = r(t) * R θJA
RθJA = 113°C/W
D = 0.02
0.01
P(pk)
D = 0.01
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t 1/t2
D = 0.005
D = Single Pulse
0.001
0.00001
0.0001
DMS3019SSD
Document number: DS35053 Rev. 2 - 2
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (s)
Fig. 23 Transient Thermal Response
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10
100
1,000
October 2010
© Diodes Incorporated
DMS3019SSD
0.254
Package Outline Dimensions
E1 E
A1
L
SO-8
Dim
Min
Max
A
1.75
A1
0.10
0.20
A2
1.30
1.50
A3
0.15
0.25
b
0.3
0.5
D
4.85
4.95
E
5.90
6.10
E1
3.85
3.95
e
1.27 Typ
h
0.35
L
0.62
0.82
0°
8°
θ
All Dimensions in mm
Gauge Plane
Seating Plane
Detail ‘A’
7°~9°
h
45°
Detail ‘A’
A2 A A3
b
e
D
Suggested Pad Layout
X
C1
C2
Dimensions
X
Y
C1
C2
Value (in mm)
0.60
1.55
5.4
1.27
Y
DMS3019SSD
Document number: DS35053 Rev. 2 - 2
9 of 10
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October 2010
© Diodes Incorporated
DMS3019SSD
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2010, Diodes Incorporated
www.diodes.com
DMS3019SSD
Document number: DS35053 Rev. 2 - 2
10 of 10
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October 2010
© Diodes Incorporated
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