MCP16331 High-Voltage Input Integrated Switch Step-Down Regulator Features: General Description: • • • • • The MCP16331 is a highly integrated, high-efficiency, fixed frequency, step-down DC-DC converter in a popular 6-pin SOT-23 or 8-pin TDFN 2x3 package that operates from input voltage sources up to 50V. Integrated features include a high side switch, fixed frequency Peak Current Mode Control, internal compensation, peak current limit and overtemperature protection. Minimal external components are necessary to develop a complete step-down DC-DC converter power supply. High converter efficiency is achieved by integrating the current-limited, low-resistance, high-speed N-Channel MOSFET and associated drive circuitry. High switching frequency minimizes the size of external filtering components resulting in a small solution size. The MCP16331 can supply 500 mA of continuous current while regulating the output voltage from 2.0V to 24V. An integrated, high-performance peak current mode architecture keeps the output voltage tightly regulated, even during input voltage steps and output current transient conditions that are common in power systems. The EN input is used to turn the device on and off. While off, only a few µA of current are consumed from the input for power shedding and load distribution applications. This pin is internally pulled up, so the device will start even if the EN pin is left floating. Output voltage is set with an external resistor divider. The MCP16331 is offered in a space saving 6-Lead SOT-23 and 8-Lead 2x3 TDFN surface mount package. • • • • • • • • • • • • • • Up to 96% Efficiency Input Voltage Range: 4.4V to 50V Output Voltage Range: 2.0V to 24V 2% Output Voltage Accuracy Qualification: AEC-Q100 Rev. G, Grade 1(-40oC to 125oC) Integrated N-Channel Buck Switch: 600 m Minimum 500 mA Output Current Over All Input Voltage Range (See Figure 2-9 for Maximum Output Current vs. VIN) - Up to 1.2A Output Current at 3.3V and 5V VOUT, VIN>12V, SOT-23 package at 25oC ambient temperature - Up to 0.8A Output Current at 12V VOUT, VIN>18V, SOT-23 package at 25oC ambient temperature 500 kHz Fixed Frequency Adjustable Output Voltage Low Device Shutdown Current Peak Current Mode Control Internal Compensation Stable with Ceramic Capacitors Internal Soft-Start Internal Pull-Up on EN Cycle-by-Cycle Peak Current Limit Undervoltage Lockout (UVLO): 4.1V to Start; 3.6V to Stop Overtemperature Protection Available Package: 6-Lead SOT-23, 8-Lead 2x3 TDFN Applications: • PIC® MCU/dsPIC® DSC Microcontroller Bias Supply • 48V, 24V and 12V Industrial Input DC-DC Conversion • Set-Top Boxes • DSL Cable Modems • Automotive • AC/DC Adapters • SLA Battery Powered Devices • AC-DC Digital Control Power Source • Power Meters • Consumer • Medical and Health Care • Distributed Power Supplies 2014 Microchip Technology Inc. Package Type MCP16331 6-Lead SOT-23 BOOST 1 6 SW GND 2 5 VIN VFB 3 4 EN MCP16331 8-Lead 2x3 TDFN* SW 1 EN 2 NC 3 NC 4 8 VIN EP 9 7 BOOST 6 VFB 5 GND * Includes Exposed Thermal Pad (EP); see Table 3-1 DS20005308B-page 1 MCP16331 Typical Applications 1N4148 VIN 4.5V to 50V CBOOST L 1 100 nF 15 µH BOOST SW VIN CIN 2x10 µF EN VOUT 3.3V at 500 mA 100V Schottky Diode 31.6 k COUT 2 X10 µF 20 pF optional VFB GND 10 k 1N4148 VIN 6.0V to 50V BOOST VIN CIN 2x10 µF CBOOST L1 100 nF 22 µH SW 100V Schottky Diode 52.3 k EN VFB GND Note: VOUT 5.0V at 500 mA COUT 2 X10 µF 20 pF optional 10 k EN has an internal pull up, so the device will start even if the EN pin is left floating 100 VOUT=5V 90 Efficiency (%) 80 VOUT=3.3V 70 60 50 40 30 20 10 VIN=12V 0 10 DS20005308B-page 2 100 Output Current (mA) 1000 2014 Microchip Technology Inc. MCP16331 1.0 † Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings † VIN, SW ............................................................... -0.5V to 54V BOOST – GND ................................................... -0.5V to 60V BOOST – SW Voltage........................................ -0.5V to 6.0V VFB Voltage ........................................................ -0.5V to 6.0V EN Voltage ............................................. -0.5V to (VIN + 0.3V) Output Short Circuit Current ................................. Continuous Power Dissipation ....................................... Internally Limited Storage Temperature ................................... -65oC to +150oC Ambient Temperature with Power Applied ... -40oC to +125oC Operating Junction Temperature.................. -40oC to +160oC ESD Protection on All Pins: HBM..................................................................... 4 kV MM ......................................................................300V DC CHARACTERISTICS Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VIN = VEN = 12V, VBOOST - VSW = 3.3V, VOUT = 3.3V, IOUT = 100 mA, L = 15 µH, COUT = CIN = 2 X 10 µF X7R Ceramic Capacitors Boldface specifications apply over the TA range of -40°C to +125°C. Parameters Sym. Min. Typ. Max. Units Conditions Input Voltage VIN 4.4 — 50 V Feedback Voltage VFB 0.784 0.800 0.816 V VOUT 2.0 — 24 V Note 1, Note 3 Feedback Voltage Line Regulation VFB/VFB)/VIN| — 0.002 0.1 %/V VIN = 5V to 50V Feedback Voltage Load Regulation VFB/VFB| — 0.13 0.35 % IOUT= 50 mA to 500 mA Output Voltage Adjust Range Feedback Input Bias Current Note 1 IFB — +/- 3 — nA Undervoltage Lockout Start UVLOSTRT — 4.1 4.4 V VIN Rising Undervoltage Lockout Stop UVLOSTOP 3 3.6 — V VIN Falling Undervoltage Lockout Hysteresis UVLOHYS — 0.5 — V Switching Frequency fSW 425 500 550 kHz Maximum Duty Cycle DCMAX 90 93 — % VIN = 5V; VFB = 0.7V; IOUT = 100 mA Minimum Duty Cycle DCMIN — 1 — % Note 4 NMOS Switch On Resistance RDS(ON) — 0.6 — VBOOST - VSW = 5V, Note 3 NMOS Switch Current Limit IN(MAX) — 1.3 — A VBOOST - VSW = 5V, Note 3 Quiescent Current IQ — 1 1.7 mA VIN = 12V; Note 2 Quiescent Current - Shutdown IQ — 6 10 A VOUT = EN = 0V Output Current IOUT 500 — — mA Note 1; see Figure 2-9 EN Input Logic High VIH 1.9 — — V Note 1: 2: 3: 4: The input voltage should be > output voltage + headroom voltage; higher load currents increase the input voltage necessary for regulation. See characterization graphs for typical input to output operating voltage range. VBOOST supply is derived from VOUT. Determined by characterization, not production tested. This is ensured by design. 2014 Microchip Technology Inc. DS20005308B-page 3 MCP16331 DC CHARACTERISTICS (CONTINUED) Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VIN = VEN = 12V, VBOOST - VSW = 3.3V, VOUT = 3.3V, IOUT = 100 mA, L = 15 µH, COUT = CIN = 2 X 10 µF X7R Ceramic Capacitors Boldface specifications apply over the TA range of -40°C to +125°C. Parameters Sym. Min. EN Input Logic Low Typ. Max. Units Conditions VIL — — 0.4 V IENLK — 0.007 0.5 µA VIN = EN = 5V Soft-Start Time tSS — 600 — µs EN Low-to-High, 90% of VOUT Thermal Shutdown Die Temperature TSD — 160 — C Note 3 TSDHYS — 30 — C Note 3 EN Input Leakage Current Die Temperature Hysteresis Note 1: 2: 3: 4: The input voltage should be > output voltage + headroom voltage; higher load currents increase the input voltage necessary for regulation. See characterization graphs for typical input to output operating voltage range. VBOOST supply is derived from VOUT. Determined by characterization, not production tested. This is ensured by design. TEMPERATURE SPECIFICATIONS Electrical Specifications: Parameters Sym. Min. Typ. Max. Units Conditions Operating Junction Temperature Range TJ -40 — +125 °C Storage Temperature Range TA -65 — +150 °C Maximum Junction Temperature TJ — — +160 °C Thermal Resistance, 6L-SOT-23 JA — 190.5 — °C/W EIA/JESD51-3 Standard Thermal Resistance, 8L-2x3 TDFN JA — 52.5 — °C/W EIA/JESD51-3 Standard Temperature Ranges Steady State Transient Package Thermal Resistances DS20005308B-page 4 2014 Microchip Technology Inc. MCP16331 2.0 TYPICAL PERFORMANCE CURVES The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Note: Unless otherwise indicated, VIN = EN = 12V, COUT = CIN = 2 X10 µF, L = 15 µH, VOUT = 3.3V, ILOAD = 100 mA, TA = +25°C, 6-Lead SOT-23 package. 100 100 VIN = 6V 90 90 80 70 60 VIN = 12V VIN = 24V 50 40 30 20 10 0 VIN = 48V 70 Efficiency (%) Efficiency (%) 80 VIN = 48V 60 50 40 30 20 10 1 10 100 0 1000 1 IOUT (mA) FIGURE 2-1: IOUT. 1000 3.3V VOUT Efficiency vs. FIGURE 2-4: IOUT. 24V VOUT Efficiency vs. 100 90 90 VIN = 12V 80 70 VIN = 24V 60 50 VIN = 48V 40 Efficiency (%) 80 Efficiency (%) 100 IOUT (mA) 100 IOUT= 500 mA 70 60 IOUT= 100 mA 50 40 30 30 20 20 10 IOUT= 10 mA 10 0 1 10 100 0 1000 6 IOUT (mA) FIGURE 2-2: 5V VOUT Efficiency vs. IOUT. 100 100 90 90 80 80 VIN = 48V 70 VIN = 24V 60 50 40 10 10 100 1000 FIGURE 2-3: 12V VOUT Efficiency vs. IOUT. 2014 Microchip Technology Inc. 26 30 VIN (V) 34 38 42 46 50 3.3V VOUT Efficiency vs. IOUT = 500 mA IOUT = 100 mA 40 20 IOUT (mA) 22 50 30 10 18 60 20 1 14 70 30 0 10 FIGURE 2-5: VIN. Efficiency (%) Efficiency (%) 10 IOUT = 10 mA 0 6 10 FIGURE 2-6: 14 18 22 26 30 VIN (V) 34 38 42 46 50 5V VOUT Efficiency vs. VIN. DS20005308B-page 5 MCP16331 Note: Unless otherwise indicated, VIN = EN = 12V, COUT = CIN = 2 X10 µF, L = 15 µH, VOUT = 3.3V, ILOAD = 100 mA, TA = +25°C, 6-Lead SOT-23 package. 100 0.83 IOUT = 500 mA 90 IOUT = 100 mA Feedback Voltage (V) Efficiency (%) 80 70 60 50 IOUT = 10 mA 40 30 20 0.82 0.81 0.8 VIN =12V VOUT = 3.3V IOUT = 100 mA 0.79 10 0.78 0 14 18 22 26 FIGURE 2-7: 30 34 VIN (V) 38 42 46 -40 -25 -10 5 50 12V VOUT Efficiency vs. VIN. FIGURE 2-10: 100 Peak Current Limit (A) IOUT = 100 mA 80 Efficiency (%) VFB vs. Temperature. 1.8 90 IOUT = 500 mA 70 60 IOUT = 10 mA 50 40 30 20 1.6 VOUT = 5V 1.4 1.2 VOUT = 3.3V 1 VOUT = 12V 0.8 0.6 0.4 0.2 10 0 0 26 30 34 FIGURE 2-8: 38 VIN (V) 42 46 -40 -25 -10 50 24V VOUT Efficiency vs. VIN. 1400 5 FIGURE 2-11: Temperature. 20 35 50 65 80 Temperature (°C) 95 110 125 Peak Current Limit vs. 1.2 VOUT = 5V 1200 Switch RDSON (Ω) 1 VOUT = 3.3V 1000 IOUT (mA) 20 35 50 65 80 95 110 125 Temperature (°C) 800 VOUT = 12V VOUT = 24V 600 400 0.8 0.6 0.4 VIN = 6V VOUT=VBOOST= 3.3V IOUT = 200 mA 0.2 200 0 0 6 10 14 18 FIGURE 2-9: DS20005308B-page 6 22 26 30 VIN (V) 34 38 42 Max IOUT vs. VIN. 46 50 -40 -25 -10 FIGURE 2-12: Temperature. 5 20 35 50 65 80 95 110 125 Temperature (°C) Switch RDSON vs. 2014 Microchip Technology Inc. MCP16331 Note: Unless otherwise indicated, VIN = EN = 12V, COUT = CIN = 2 X10 µF, L = 15 µH, VOUT = 3.3V, ILOAD = 100 mA, TA = +25°C, 6-Lead SOT-23 package. 0.8 3.295 Switch RDSON (Ω) 0.75 0.7 VIN = 6V VOUT= 3.3V VOUT(V) 0.65 VOUT = 3.3V IOUT=100 mA 3.29 0.6 3.285 3.28 0.55 0.5 3.275 0.45 3.27 0.4 2.5 3 3.5 4 VBOOST (V) FIGURE 2-13: 4.5 5 5 5.5 Switch RDSON vs. VBOOST. 20 25 VIN(V) 30 35 40 45 50 VOUT vs VIN. 1.2 4.6 No Load Input Current (mA) Input Voltage (V) 15 FIGURE 2-16: 5 VIN = 12V VOUT = 3.3V 1.1 UVLO START 4.2 3.8 UVLO STOP 3.4 1 0.9 0.8 3 -40 -25 -10 5 FIGURE 2-14: Temperature. -40 -25 -10 20 35 50 65 80 95 110 125 Temperature (°C) Undervoltage Lockout vs. 7 1.3 1.2 UP 1.1 DOWN 1 6.5 Shutdown Current (µA) VIN = 12V VOUT = 3.3V IOUT = 100 mA 5 FIGURE 2-17: Temperature. 1.4 Enable Voltage (V) 10 20 35 50 65 80 Temperature (°C) 95 110 125 Input Quiescent Current vs. VIN = 12V VOUT = 3.3V 6 5.5 5 4.5 4 0.9 -40 -25 -10 FIGURE 2-15: Temperature. 5 20 35 50 65 80 95 110 125 Temperature (°C) EN Threshold Voltage vs. 2014 Microchip Technology Inc. -40 -25 -10 FIGURE 2-18: Temperature. 5 20 35 50 65 80 Temperature (°C) 95 110 125 Shutdown Current vs. DS20005308B-page 7 MCP16331 Note: Unless otherwise indicated, VIN = EN = 12V, COUT = CIN = 2 X10 µF, L = 15 µH, VOUT = 3.3V, ILOAD = 100 mA, TA = +25°C, 6-Lead SOT-23 package. Switching Frequency (kHz) 525 1.9 VOUT = 3.3V No Load Input Current (mA) 1.7 1.5 1.3 1.1 0.9 0.7 0.5 5 10 15 FIGURE 2-19: VIN. 20 25 30 VIN (V) 35 40 45 475 VIN = 12V VOUT = 3.3V IOUT = 200 mA 450 50 Input Quiescent Current vs. 500 -40 -25 -10 FIGURE 2-22: Temperature. 5 20 35 50 65 80 95 110 125 Temperature (°C) Switching Frequency vs. 4.3 18 VOUT=3.3V 15 To Start 4.1 VIN (V) Shutdown Current (µA) VOUT = 3.3V 12 3.9 9 To Stop 3.7 6 3 3.5 5 10 15 FIGURE 2-20: 20 25 30 VIN (V) 35 40 45 50 Shutdown Current vs. VIN. 0 0.1 FIGURE 2-23: Output Current. 0.2 0.3 Output Current (A) 0.4 0.5 Minimum Input Voltage vs Output Current (mA) 20 15 VOUT = 3.3V 10 VOUT = 5V 5 0 5 10 15 FIGURE 2-21: Threshold vs VIN. DS20005308B-page 8 20 25 30 VIN (V) 35 40 45 50 PWM/Skipping IOUT 2014 Microchip Technology Inc. MCP16331 Note: Unless otherwise indicated, VIN = EN = 12V, COUT = CIN = 2 X10 µF, L = 15 µH, VOUT = 3.3V, ILOAD = 100 mA, TA = +25°C, 6-Lead SOT-23 package. VIN = 12V VOUT = 3.3V IOUT = 300 mA VOUT 20 mV/div AC coupled VIN = 12V VOUT = 3.3V IOUT = 200 mA VOUT 1V/div IL 200 mA/div EN 2V/div SW 10V/div 2 µs/div FIGURE 2-24: Waveforms. 80 µs/div Heavy Load Switching VIN = 48V VOUT = 3.3V IOUT = 5 mA VOUT 20 mV/div AC coupled FIGURE 2-27: Startup from EN. VIN = 12V VOUT = 3.3V IOUT 200 mA/div Load Step from 100 mA to 500 mA IL 50 mA/div SW 20V/div VOUT 50 mV/div AC coupled 10 µs/div FIGURE 2-25: Waveforms. 200 µs/div Light Load Switching FIGURE 2-28: VOUT = 3.3V IOUT = 200 mA VIN = 36V VOUT = 3.3V IOUT = 200 mA VOUT 100 mV/div AC coupled VOUT 1V/div VIN 10V/div VIN 20V/div Line Step from 5V to 24V 200 µs/div 80 µs/div FIGURE 2-26: Load Transient Response. Startup from VIN. 2014 Microchip Technology Inc. FIGURE 2-29: Line Transient Response. DS20005308B-page 9 MCP16331 3.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 3-1. TABLE 3-1: PIN FUNCTION TABLE MCP16331 Symbol Description 6 SW Output switch node, connects to the inductor, freewheeling diode and the bootstrap capacitor. 2 4 EN Enable pin. There is an internal pull up on the VIN. To turn the device off, connect EN to GND. 3 — NC Not connected 4 — NC Not connected 5 2 GND Ground pin 6 3 VFB Output voltage feedback pin. Connect VFB to an external resistor divider to set the output voltage. 7 1 BOOST 8 5 VIN Boost voltage that drives the internal NMOS control switch. A bootstrap capacitor is connected between the BOOST and SW pins. Input supply voltage pin for power and internal biasing. 9 — EP Exposed Thermal Pad TDFN SOT-23 1 3.1 Switch Node (SW) The switch node pin is connected internally to the NMOS switch, and externally to the SW node consisting of the inductor and Schottky diode. The external Schottky diode should be connected close to the SW node and GND. 3.2 Enable Pin (EN) The EN pin is a logic-level input used to enable or disable the device switching, and lower the quiescent current while disabled. By default the MCP16331 is enabled through an internal pull-up. To turn off the device, the EN pin must be pulled low. 3.3 3.6 Power Supply Input Voltage Pin (VIN) Connect the input voltage source to VIN. The input source should be decoupled to GND with a 4.7 µF - 20 µF capacitor, depending on the impedance of the source and output current. The input capacitor provides current for the switch node and a stable voltage source for the internal device power. This capacitor should be connected as close as possible to the VIN and GND pins. 3.7 Exposed Thermal Pad Pin (EP) There is an internal electrical connection between the EP and GND pin for the TDFN package. Ground Pin (GND) The ground or return pin is used for circuit ground connection. The length of the trace from the input cap return, output cap return and GND pin should be made as short as possible to minimize the noise on the GND pin. 3.4 Feedback Voltage Pin (VFB) The VFB pin is used to provide output voltage regulation by using a resistor divider. The VFB voltage will be 0.8V typical with the output voltage in regulation. 3.5 Boost Pin (BOOST) The supply for the floating high side driver used to turn the integrated N-Channel MOSFET on and off is connected to the boost pin. DS20005308B-page 10 2014 Microchip Technology Inc. MCP16331 NOTES: 2014 Microchip Technology Inc. DS20005308B-page 11 MCP16331 4.0 DETAILED DESCRIPTION 4.1.4 4.1 Device Overview Enable input is used to disable the device, while connected to GND. If disabled, the MCP16331 device consumes a minimal current from the input. The MCP16331 is a high input voltage step-down regulator, capable of supplying 500 mA to a regulated output voltage from 2.0V to 24V. Internally, the trimmed 500 kHz oscillator provides a fixed frequency, while the Peak Current Mode Control architecture varies the duty cycle for output voltage regulation. An internal floating driver is used to turn the high-side integrated N-Channel MOSFET on and off. The power for this driver is derived from an external boost capacitor (CBOOST) whose energy is supplied from a fixed voltage ranging between 3.0V and 5.5V, typically the input or output voltage of the converter. For applications with an output voltage outside of this range, 12V for example, the boost capacitor bias can be derived from the output using a simple Zener diode regulator. 4.1.1 INTERNAL REFERENCE VOLTAGE VREF An integrated precise 0.8V reference combined with an external resistor divider sets the desired converter output voltage. The resistor divider range can vary without affecting the control system gain. High-value resistors consume less current, but are more susceptible to noise. 4.1.2 4.1.5 ENABLE INPUT SOFT START The internal reference voltage rate of rise is controlled during startup, minimizing the output voltage overshoot and the inrush current. 4.1.6 UNDERVOLTAGE LOCKOUT An integrated Undervoltage Lockout (UVLO) prevents the converter from starting until the input voltage is high enough for normal operation. The converter will typically start at 4.1V and operate down to 3.6V. Hysteresis is added to prevent starting and stopping during start-up as a result of loading the input voltage source. 4.1.7 OVERTEMPERATURE PROTECTION Overtemperature protection limits the silicon die temperature to +160°C by turning the converter off. The normal switching resumes at +130°C. INTERNAL COMPENSATION All control system components necessary for stable operation over the entire device operating range are integrated, including the error amplifier and inductor current slope compensation. To add the proper amount of slope compensation, the inductor value changes along with the output voltage (see Table 5-1). 4.1.3 EXTERNAL COMPONENTS External components consist of: • • • • • • input capacitor output filter (inductor and capacitor) freewheeling diode boost capacitor boost blocking diode resistor divider The selection of the external inductor, output capacitor, input capacitor and freewheeling diode is dependent upon the output voltage, input voltage and the maximum output current. DS20005308B-page 12 2014 Microchip Technology Inc. MCP16331 VIN BG REF CIN VOUT VREG Boost Pre Charge SS OVERTEMP VREF RTOP + Amp - FB S - PWM Latch Comp RCOMP VREF EN HS Drive SW + + SHDN all blocks GND L Schottky Diode R Precharge Overtemp CCOMP + - Boost Diode CBOOST 500 kHz OSC + RBOT BOOST VOUT COUT CS RSENSE Slope Comp GND Note: EN has an internal pull up, so the device will start even if the EN pin is left floating. FIGURE 4-1: 4.2 4.2.1 MCP16331 Block Diagram. Functional Description STEP-DOWN OR BUCK CONVERTER The MCP16331 is a non-synchronous, step-down or buck converter capable of stepping input voltages ranging from 4.4V to 50V down to 2.0V to 24V for VIN > VOUT. The integrated high side switch is used to chop or modulate the input voltage using a controlled duty cycle for output voltage regulation. High efficiency is achieved by using a low-resistance switch, low forward drop diode, low equivalent series resistance, inductor and capacitor. When the switch is turned on, a DC voltage is applied across the inductor (VIN - VOUT), resulting in a positive linear ramp of inductor current. When the switch turns off, the applied inductor voltage is equal to -VOUT, resulting in a negative linear ramp of inductor current (ignoring the forward drop of the Schottky diode). 2014 Microchip Technology Inc. For steady-state, continuous inductor current operation, the positive inductor current ramp must equal the negative current ramp in magnitude. While operating in steady state, the switch duty cycle must be equal to the relationship of VOUT/VIN for constant output voltage regulation, under the condition that the inductor current is continuous, or never reaches zero. For discontinuous inductor current operation, the steady-state duty cycle will be less than VOUT/VIN to maintain voltage regulation. The average of the chopped input voltage or SW node voltage is equal to the output voltage, while the average of the inductor current is equal to the output current. DS20005308B-page 13 MCP16331 4.2.3 IL SW VIN + - Schottky Diode VOUT L COUT IL IOUT 0 VIN SW VOUT on on on off off Continuous Inductor Current Mode IL 0 IOUT VIN SW on on off off on Discontinuous Inductor Current Mode FIGURE 4-2: 4.2.2 Step-Down Converter. PEAK CURRENT MODE CONTROL The MCP16331 integrates a Peak Current Mode Control architecture, resulting in superior AC regulation while minimizing the number of voltage loop compensation components and their size for integration. Peak Current Mode Control takes a small portion of the inductor current, replicates it and compares this replicated current sense signal with the output of the integrated error voltage. In practice, the inductor current and the internal switch current are equal during the switch-on time. By adding this peak current sense to the system control, the step-down power train system is reduced from a 2nd order to a 1st order. This reduces the system complexity and increases its dynamic performance. PULSE-WIDTH MODULATION (PWM) The internal oscillator periodically starts the switching period, which in MCP16331’s case occurs every 2 µs or 500 kHz. With the integrated switch turned on, the inductor current ramps up until the sum of the current sense and slope compensation ramp exceeds the integrated error amplifier output. The error amplifier output slews up or down to increase or decrease the inductor peak current feeding into the output LC filter. If the regulated output voltage is lower than its target, the error amplifier output rises. This results in an increase in the inductor current to correct for error in the output voltage. The fixed frequency duty cycle is terminated when the sensed inductor peak current summed with the internal slope compensation exceeds the output voltage of the error amplifier. The PWM latch is set by turning off the internal switch and preventing it from turning on until the beginning of the next cycle. An overtemperature signal or boost cap undervoltage can also reset the PWM latch to terminate the cycle. When working close to the boundary conduction threshold, a jitter on the SW node may occur, reflecting in the output voltage. Although the low-frequency output component is very small, it may be desirable to completely eliminate this component. To achieve this, different methods can be applied to reduce or completely eliminate this component. In addition to a very good layout, a capacitor in parallel with the top feedback resistor or an RC snubber between the SW node and GND can be added. Typical values for the snubber are 680 pF and 430, while the capacitor in parallel with the top feedback resistor can use values from 10 pF to 47 pF. Using such a snubber eliminates the ringing on the SW node, but decreases the overall efficiency of the converter. For Pulse-Width Modulation (PWM) duty cycles that exceed 50%, the control system can become bimodal where a wide pulse followed by a short pulse repeats instead of the desired fixed-pulse width. To prevent this mode of operation, an internal compensating ramp is summed into the current shown in Figure 4-2. DS20005308B-page 14 2014 Microchip Technology Inc. MCP16331 4.2.4 HIGH SIDE DRIVE The MCP16331 features an integrated high-side N-Channel MOSFET for high-efficiency step-down power conversion. An N-Channel MOSFET is used for its low resistance and size (instead of a P-Channel MOSFET). A gate drive voltage above the input is necessary to turn on the high side N-Channel. The high side drive voltage should be between 3.0V and 5.5V. The N-Channel source is connected to the inductor and Schottky diode, or switch node. When the switch is off, the boost cap voltage is replenished, typically from the output voltage for 3V to 5V output applications. A boost-blocking diode is used to prevent current flow from the boost cap back into the output during the internal switch-on time. Prior to startup, the boost cap has no stored charge to drive the switch. An internal regulator is used to “precharge” the boost cap. Once precharged, the switch is turned on and the inductor current flows. When the switch turns off, the inductor current freewheels through the Schottky diode, providing a path to recharge the boost cap. Worst-case conditions for recharge occur when the switch turns on for a very short duty cycle at light load, limiting the inductor current ramp. In this case, there is a small amount of time for the boost capacitor to recharge. For high input voltages there is enough precharge current to replace the boost cap charge. For input voltages above 5.5V typical, the MCP16331 device will regulate the output voltage with no load. After starting, the MCP16331 will regulate the output voltage until the input voltage decreases below 4V. See Figure 2-23 for device range of operation over input voltage, output voltage and load. 4.2.5 ALTERNATIVE BOOST BIAS For 3.0V to 5.0V output voltage applications, the boost supply is typically the output voltage. For applications with VOUT < 3.0V or VOUT > 5.0V, an alternative boost supply can be used. Alternative boost supplies can be from the input, input derived, output derived or an auxiliary system voltage. For low-voltage output applications with unregulated input voltage, a shunt regulator derived from the input can be used to derive the boost supply. For applications with high-output voltage or regulated highinput voltage, a series regulator can be used to derive the boost supply. In case the boost is biased from an external source while in shutdown, the device will draw slightly higher current. 2014 Microchip Technology Inc. DS20005308B-page 15 MCP16331 Boost Diode C1 VZ = 5.1V BOOST RSH CB EN VIN L 2V VIN 12V VOUT MCP16331 SW COUT FW Diode CIN RTOP FB GND RBOT 3.0V to 5.5V External Supply Boost Diode BOOST CB EN VIN L 2V VIN 12V VOUT MCP16331 SW COUT FW Diode CIN GND RTOP FB RBOT FIGURE 4-3: Shunt and External Boost Supply. Shunt Boost Supply Regulation is used for low-output voltage converters operating from a wide ranging input source. A regulated 3.0V to 5.5V supply is needed to provide high-side drive bias. The shunt uses a Zener diode to clamp the voltage within the 3.0V to 5.5V range using the resistance shown in Figure 4-3. To calculate the shunt resistance, the boost drive current can be estimated using Equation 4-1. DS20005308B-page 16 IBOOST_TYP for 3.3V Boost Supply = 0.6 mA IBOOST_TYP for 5.0V Boost Supply = 0.8 mA. EQUATION 4-1: BOOST CURRENT I BOOST = I BOOST_TYP 1.5 mA 2014 Microchip Technology Inc. MCP16331 To calculate the shunt resistance, the maximum IBOOST and IZ current are used at the minimum input voltage (Equation 4-2). EQUATION 4-2: VZ and IZ can be found on the Zener diode manufacturer’s data sheet. Typically, IZ = 1 mA. SHUNT RESISTANCE V INMIN – V Z R SH = -----------------------------I Boost + I Z Boost Diode VZ = 7.5V BOOST CB EN VIN L MCP16331 12V VIN 15V to 50V VOUT SW COUT FW Diode CIN RTOP FB GND RBOT Boost Diode BOOST VZ = 7.5V CB EN VIN SW 2V VIN 12V VOUT L MCP16331 COUT FW Diode CIN GND RTOP FB RBOT FIGURE 4-4: Series Regulator Boost Supply. Series regulator applications use a Zener diode to drop the excess voltage. The series regulator bias source can be input or output voltage derived, as shown in Figure 4-4. The boost supply must remain between 3.0V and 5.5V at all times for proper circuit operation. 2014 Microchip Technology Inc. DS20005308B-page 17 MCP16331 5.0 APPLICATION INFORMATION 5.1 Typical Applications The MCP16331 step-down converter operates over a wide input voltage range, up to 50V maximum. Typical applications include generating a bias or VDD voltage for the PIC® microcontroller product line, digital control system bias supply for AC-DC converters, 24V industrial input and similar applications. 5.2 Adjustable Output Voltage Calculations To calculate the resistor divider values for the MCP16331, Equation 5-1 can be used. RTOP is connected to VOUT, RBOT is connected to GND and both are connected to the VFB input pin. EQUATION 5-1: R TOP V OUT = R BOT ------------- – 1 V FB EXAMPLE 5-1: VOUT = 3.3V VFB = 0.8V RBOT = 10 k RTOP = 31.25 k (standard value = 31.6 k) VOUT = 3.328V (using standard value) EXAMPLE 5-2: VOUT = 5.0V VFB = 0.8V RBOT = 10 k RTOP = 52.5 k (standard value = 52.3 k) VOUT = 4.98V (using standard value) The transconductance error amplifier gain is controlled by its internal impedance. The external divider resistors have no effect on system gain so a wide range of values can be used. A 10 k resistor is recommended as a good trade-off for quiescent current and noise immunity. DS20005308B-page 18 5.3 General Design Equations The step-down converter duty cycle can be estimated using Equation 5-2, while operating in Continuous Inductor Current Mode. This equation also counts the forward drop of the freewheeling diode and internal N-Channel MOSFET switch voltage drop. As the load current increases, the switch voltage drop and diode voltage drop increase, requiring a larger PWM duty cycle to maintain the output voltage regulation. Switch voltage drop is estimated by multiplying the switch current times the switch resistance or RDSON. EQUATION 5-2: CONTINUOUS INDUCTOR CURRENT DUTY CYCLE V OUT + V Diode D = ------------------------------------------------------ V IN – I SW R DSON The MCP16331 device features an integrated slope compensation to prevent the bimodal operation of the PWM duty cycle. Internally, half of the inductor current down slope is summed with the internal current sense signal. For the proper amount of slope compensation, it is recommended to keep the inductor down-slope current constant by varying the inductance with VOUT, where K = 0.22V/µH. EQUATION 5-3: K = V OUT L TABLE 5-1: RECOMMENDED INDUCTOR VALUES VOUT K LSTANDARD 2.0V 0.20 10 µH 3.3V 0.22 15 µH 5.0V 0.23 22 µH 12V 0.21 56 µH 15V 0.22 68 µH 24V 0.24 100 µH 2014 Microchip Technology Inc. MCP16331 5.4 Input Capacitor Selection 5.6 Inductor Selection The step-down converter input capacitor must filter the high-input ripple current, as a result of pulsing or chopping the input voltage. The MCP16331 input voltage pin is used to supply voltage for the power train and as a source for internal bias. A low Equivalent Series Resistance (ESR), preferably a ceramic capacitor, is recommended. The necessary capacitance is dependent upon the maximum load current and source impedance. Three capacitor parameters to keep in mind are the voltage rating, equivalent series resistance and the temperature rating. For wide temperature-range applications, a multi-layer X7R dielectric is mandatory, while for applications with limited temperature range, a multilayer X5R dielectric is acceptable. Typically, input capacitance between 4.7 µF and 20 µF is sufficient for most applications. The MCP16331 is designed to be used with small surface mount inductors. Several specifications should be considered prior to selecting an inductor. To optimize system performance, the inductance value is determined by the output voltage (Table 5-1) so the inductor ripple current is somewhat constant over the output voltage range. The input capacitor voltage rating should be a minimum of VIN plus margin. Table 5-2 contains the recommended range for the input capacitor value. VOUT = 3.3V 5.5 Output Capacitor Selection The output capacitor helps in providing a stable output voltage during sudden load transients, and reduces the output voltage ripple. As with the input capacitor, X5R and X7R ceramic capacitors are well suited for this application. The amount and type of output capacitance and equivalent series resistance will have a significant effect on the output ripple voltage and system stability. The range of the output capacitance is limited due to the integrated compensation of the MCP16331. The output voltage capacitor voltage rating should be a minimum of VOUT, plus margin. Table 5-2 contains the recommended range for the input and output capacitor value: TABLE 5-2: EQUATION 5-4: INDUCTOR RIPPLE CURRENT V –V L IN OUT IL = --------------------------- t ON EXAMPLE 5-3: VIN = 12V IOUT = 500 mA EQUATION 5-5: INDUCTOR PEAK CURRENT IL I LPK = -------- + I OUT 2 Inductor ripple current = 319 mA Inductor peak current = 660 mA For the example above, an inductor saturation rating of minimum 660 mA is recommended. Low DCR inductors result in higher system efficiency. A trade-off between size, cost and efficiency is made to achieve the desired results. CAPACITOR VALUE RANGE Parameter Min. Max. CIN 4.7 µF none COUT 20 µF — 2014 Microchip Technology Inc. DS20005308B-page 19 MCP16331 ME3220-153 15 0.52 0.90 3.2x2.5x2.0 ME3220-223 22 0.787 0.71 3.2x2.5x2.0 LPS4414-153 15 0.440 0.92 4.4x4.4x1.4 LPS4414-223 22 0.59 0.74 4.4x4.4x1.4 LPS6235-153 15 0.125 2.00 6.2x6.2x3.5 LPS6235-223 22 0.145 1.7 6.2x6.2x3.5 MSS6132-153 15 0.106 1.56 6.1x6.1x3.2 MSS6132-223 22 0.158 1.22 6.1x6.1x3.2 MSS7341-153 15 0.055 1.78 6.6x6.6x4.1 MSS7341-223 22 0.082 1.42 6.6x6.6x4.1 15 0.700 0.62 3.0x3.0x1.5 LPS3015-223 22 0.825 0.5 3.0x3.0x1.5 0.575 0.75 2.8x2.8x2.8 ISAT (A) Size WxLxH (mm) Part Number Value (µH) ISAT (A) MCP16331 RECOMMENDED 5V INDUCTORS DCR () TABLE 5-4: Value (µH) MCP16331 RECOMMENDED 3.3V INDUCTORS DCR () TABLE 5-3: Size WxLxH (mm) Coilcraft® Coilcraft® LPS3015-153 Wurth Elektronik Part Number ® Wurth Elektronik 744025150 15 744042150 7447779115 ® 0.400 0.900 2.8x2.8x2.8 744025220 22 15 0.22 0.75 4.8x4.8x1.8 744042220 22 0.3 0.6 4.8x4.8x1.8 15 0.081 2.2 7.3x7.3x4.5 7447779122 22 0.11 1.7 7.3x7.3x4.5 Coiltronics® Cooper Bussman® SD12-150R 15 0.408 0.692 5.2x5.2x1.2 SD12-220-R 22 0.633 0.574 5.2x5.2x1.2 SD3118-150-R SD52-150-R 15 0.44 0.75 3.2x3.2x1.8 SD3118-220-R 22 0.676 0.61 3.2x3.2x1.8 15 0.161 0.88 5.2x5.5.2.0 SD52-220-R 22 0.204 0.73 5.2x5.2x2 Sumida® Sumida® CDPH4D19FNP -150MC 15 0.075 0.66 5.2x5.2x2.0 CDPH4D19FNP -220MC 22 0.135 0.54 5.2x5.2x2 CDRH3D16/ HPNP-150MC 15 0.410 0.65 4.0x4.0x1.8 CDRH3D16/ HPNP-220MC 22 0.61 0.55 4.0x4.0x1.8 22 0.15 0.85 6.3x6.3x3 TDK - EPCOS® B82462G4153M TDK - EPCOS® 15 0.097 1.05 6.3x6.3x3 82462G4223M 5.7 Freewheeling Diode The freewheeling diode creates a path for inductor current flow after the internal switch is turned off. The average diode current is dependent upon output load current at duty cycle (D). The efficiency of the converter is a function of the forward drop and speed of the freewheeling diode. A low forward drop Schottky diode is recommended. The current rating and voltage rating of the diode is application dependent. The diode voltage rating should be a minimum of VIN, plus margin. The average diode current can be calculated using Equation 5-6. EQUATION 5-6: DIODE AVERAGE CURRENT I DAVG = 1 – D I OUT DS20005308B-page 20 2014 Microchip Technology Inc. MCP16331 the measured efficiency, the internal power dissipation is estimated by Equation 5-7. This power dissipation includes all internal and external component losses. For a quick internal estimate, subtract the estimated Schottky diode loss and inductor DCR loss from the PDIS calculation in Equation 5-7. EXAMPLE 5-4: IOUT = 0.5A VIN = 15V VOUT = 5V D = 5/15 IDAVG = 333 mA EQUATION 5-7: A 0.5A to 1A Diode is recommended. TABLE 5-5: App FREEWHEELING DIODES Manufacturer Part Number Rating 12 VIN 500 mA Diodes Inc. DFLS120L-7 20V, 1A 24 VIN 100 mA Diodes Inc. B0540Ws-7 40V, 0.5A 18 VIN 500 mA Diodes Inc. B130L-13-F 30V, 1A 48 VIN 500 mA Diodes Inc. B1100 5.8 The difference between the first term, input power, and the second term, power delivered, is the total system power dissipation. The freewheeling Schottky diode losses are determined by calculating the average diode current and multiplying by the diode forward drop. The inductor losses are estimated by PL = IOUT2 x LDCR. 100V, 1A DIODE POWER DISSIPATION ESTIMATE PDiode = VF 1 – D I OUT Boost Diode A standard 1N4148 ultra-fast diode is recommended for its recovery speed, high voltage blocking capability, availability and cost. The voltage rating required for the boost diode is VIN. For low-boost voltage applications, a small Schottky diode with the appropriately rated voltage can be used to lower the forward drop increasing the boost supply for gate drive. Boost Capacitor The boost capacitor is used to supply current for the internal high side drive circuitry that is above the input voltage. The boost capacitor must store enough energy to completely drive the high-side switch on and off. A 0.1 µF X5R or X7R capacitor is recommended for all applications. The boost capacitor maximum voltage is 5.5V, so a 6.3V or 10V rated capacitor is recommended. 5.10 OUT I OUT V - – V OUT I OUT = PDis -----------------------------Efficiency EQUATION 5-8: The boost diode is used to provide a charging path from the low-voltage gate drive source while the switch node is low. The boost diode blocks the high voltage of the switch node from feeding back into the output voltage when the switch is turned on, forcing the switch node high. 5.9 TOTAL POWER DISSIPATION ESTIMATE EXAMPLE 5-5: VIN = 10V VOUT = 5.0V IOUT = 0.4A Efficiency = 90% Total System Dissipation = 222 mW LDCR = 0.15 PL = 24 mW Diode VF = 0.50 D = 50% PDiode = 125 mW MCP16331 internal power dissipation estimate: PDIS - PL - PDIODE = 73 mW JA = 198°C/W Estimated Junction Temperature Rise = +14.5°C Thermal Calculations The MCP16331 is available in 6-lead SOT-23 and 8lead TDFN packages. By calculating the power dissipation and applying the package thermal resistance (JA), the junction temperature is estimated. To quickly estimate the internal power dissipation for the switching step-down regulator, an empirical calculation using measured efficiency can be used. Given 2014 Microchip Technology Inc. DS20005308B-page 21 MCP16331 5.11 PCB Layout Information Good printed circuit board layout techniques are important to any switching circuitry, and switching power supplies are no different. When wiring the switching high-current paths, short and wide traces should be used. Therefore, it is important that the input and output capacitors be placed as close as possible to the MCP16331 to minimize the loop area. The feedback resistors and feedback signal should be routed away from the switching node and the switching current loop. When possible, ground planes and traces should be used to help shield the feedback signal and minimize noise and magnetic interference. DS20005308B-page 22 A good MCP16331 layout starts with CIN placement. CIN supplies current to the input of the circuit when the switch is turned on. In addition to supplying highfrequency switch current, CIN also provides a stable voltage source for the internal MCP16331 circuitry. Unstable PWM operation can result if there are excessive transients or ringing on the VIN pin of the MCP16331 device. In Figure 5-1, CIN is placed close to pin 5. A ground plane on the bottom of the board provides a low resistive and inductive path for the return current. The next priority in placement is the freewheeling current loop formed by D1, COUT and L, while strategically placing COUT return close to CIN return. Next, the boost capacitor should be placed between the boost pin and the switch node pin SW. This leaves space close to the MCP16331 VFB pin to place RTOP and RBOT. RTOP and RBOT are routed away from the Switch node so noise is not coupled into the high-impedance VFB input. 2014 Microchip Technology Inc. MCP16331 Bottom Plane is GND Bottom Trace RBOT RTOP 10 Ohm MCP16331 C 1 B DB VIN VOUT D1 L 2 x CIN GND COUT COUT 4 BOOST EN GND DB 1 CB VIN 5 4V to 50V CIN MCP16331 SW L 6 VIN COUT FB 3 2 Value CIN 2 x 10 µF COUT 2 x 10 µF L 15 µH RTOP 31.2 k RBOT 10 k D1 B1100 DB 1N4148 CB 100 nF FIGURE 5-1: 10 D1 GND Component VOUT 3.3V RTOP RBOT *Note: A 10 resistor is used with network analyzer, to measure system gain and phase. MCP16331 SOT-23-6 Recommended Layout, 500 mA Design. 2014 Microchip Technology Inc. DS20005308B-page 23 MCP16331 Bottom Plane is GND MCP16331 RBOT RTOP DB VIN VOUT CB CIN GND GND COUT D1 4 GND BOOST EN DB 1 CB VIN 4V to 50V CIN Component Value CIN 1 µF COUT 10 µF L 15 µH RTOP 31.2 k RBOT 10 k D1 STPS0560Z DB 1N4148 CB 100 nF FIGURE 5-2: DS20005308B-page 24 5 VIN MCP16331 SW VOUT L 6 3.3V COUT D1 GND 2 FB 3 RTOP RBOT Compact MCP16331 SOT-23-6 D2 Recommended Layout, Low Current Design. 2014 Microchip Technology Inc. MCP16331 MCP16331 CSNUB RSNUB RTOP RBOT L CIN COUT D1 CB DB VIN VOUT GND 2 BOOST EN DB 7 CB VIN 4V to 50V CIN 8 VIN MCP16331 Value CIN 2x10 µF COUT 2x10 µF L 22 µH RTOP 31.2 k RBOT 10 k D1 MBRS1100 DB 1N4148WS CB 100 nF CTOP 20 pF CSNUB 430 pF RSNUB 680 FIGURE 5-3: 1 CSNUB D1 GND 5 Component SW Note: FB 6 VOUT 3.3V L RSNUB COUT RTOP CTOP Optional RBOT Red represents top layer pads and traces and blue represents bottom layer pads and traces. On the bottom layer, a GND plane should be placed, which is not represented in the example above for visibility reasons. MCP16331 TDFN-8 Recommended Layout Design. 2014 Microchip Technology Inc. DS20005308B-page 25 MCP16331 6.0 TYPICAL APPLICATION CIRCUITS Boost Diode BOOST CB EN VIN L MCP16331 3.3V VIN 4.5V to 50V VOUT SW COUT FW Diode CIN GND RTOP FB RBOT Component Value Manufacturer CIN 2 x 10 µF TDK COUT 2 x 10 µF Taiyo Yuden 15 µH Coilcraft® MSS6132-153ML MSS6132 15 µH shielded power inductor 31.6 k Panasonic®-ECG ERJ-3EKF3162V Res. 31.6 KΩ 1/10W 1% 0603 SMD RBOT 10 k Panasonic-ECG ERJ-3EKF1002V Res. 10.0 KΩ 1/10W 1% 0603 SMD FW Diode B1100 Diodes® Inc. B1100-13-F L RTOP Part Number C5750X7S2A106M2 Capacitor, 10µF, 100V, X7S, 2220 30KB JMK212B7106KG-T Cap. 10 µF 6.3V ceramic X7R 0805 10% Boost Diode 1N4148 Diodes Inc. 1N4448WS-7-F CB 100 nF AVX® Corporation 0603YC104KAT2A FIGURE 6-1: DS20005308B-page 26 Comment Schottky, 100V, 1A, SMA Diode switch 75V 200 mW SOD-323 Cap. 0.1 µF 16V ceramic X7R 0603 10% Typical Application 50V VIN to 3.3V VOUT. 2014 Microchip Technology Inc. MCP16331 Boost Diode BOOST CB EN VIN MCP16331 15V to 50V DZ L VOUT SW 12V VIN COUT FW Diode CIN GND RTOP FB RBOT Component Value Manufacturer Part Number Comment CIN 2 x 10 µF TDK COUT 2 x 10 µF Taiyo Yuden JMK212B7106KG-T Cap. ceramic 10 µF 25V X7R 10% 1206 C5750X7S2A106M230KB Capacitor, 10µF, 100V, X7S, 2220 L 56 µH Coilcraft MSS7341-563ML MSS7341 56 µH shielded power inductor RTOP 140 k Panasonic-ECG ERJ-3EKF3162V Res. 140 KΩ 1/10W 1% 0603 SMD RBOT 10 k Panasonic-ECG ERJ-3EKF1002V FW Diode B1100 Diodes Inc. B1100-13-F Boost Diode 1N4148 Diodes Inc. 1N4448WS-7-F CB 100 nF AVX Corp. 0603YC104KAT2A Cap. 0.1 µF 16V ceramic X7R 0603 10% DZ 7.5V Zener Diodes Inc. MMSZ5236BS-7-F Diode Zener 7.5V 200 mW SOD-323 FIGURE 6-2: Res. 10.0 KΩ 1/10W 1% 0603 SMD Diode Schottky 100V 1A SMB Diode switch 75V 200 mW SOD-323 Typical Application 15V-50V Input; 12V Output. 2014 Microchip Technology Inc. DS20005308B-page 27 MCP16331 DZ Boost Diode BOOST CB EN VIN 12V L MCP16331 VOUT SW 2V VIN COUT FW Diode CIN GND RTOP FB RBOT Component CIN Value Manufacturer Part Number Comment 2 x 10 µF Taiyo Yuden JMK212B7106KG-T Cap. ceramic 10 µF 25V X7R 10% 1206 COUT 22 µF Taiyo Yuden JMK316B7226ML-T Cap. ceramic 22 µF 6.3V X7R 1206 L 10 µH Coilcraft MSS4020-103ML 10 µH shielded power inductor RTOP 15 k Panasonic-ECG ERJ-3EKF1502V Res.15.0 KΩ 1/10W 1% 0603 SMD RBOT 10 k Panasonic-ECG ERJ-3EKF1002V FW Diode PD3S Diodes Inc. PD3S120L-7 Boost Diode 1N4148 Diodes Inc. 1N4448WS-7-F CB 100 nF AVX Corp. 0603YC104KAT2A Cap. 0.1 µF 16V ceramic X7R 0603 10% DZ 7.5V Zener Diodes Inc. MMSZ5236BS-7-F Diode Zener 7.5V 200 mW SOD-323 FIGURE 6-3: DS20005308B-page 28 Res. 10.0 KΩ 1/10W 1% 0603 SMD Diode Schottky 1A 20V POWERDI323 Diode switch 75V 200 mW SOD-323 Typical Application 12V Input; 2V Output at 500 mA. 2014 Microchip Technology Inc. MCP16331 Boost Diode DZ CZ BOOST RZ CB EN VIN L MCP16331 SW 2.5V VIN 10V to 16V VOUT COUT FW Diode CIN GND RTOP FB RBOT Component CIN COUT L RTOP RBOT Value Manufacturer Part Number Comment 2 x 10 µF Taiyo Yuden JMK212B7106KG-T Cap. ceramic 10 µF 25V X7R 10% 1206 22 µF Taiyo Yuden JMK316B7226ML-T Cap. ceramic 22 µF 6.3V X7R 1206 12 µH Coilcraft LPS4414-123MLB LPS4414 12 µH shielded power inductor 21.5 k Panasonic-ECG ERJ-3EKF2152V Res. 21.5 KΩ 1/10W 1% 0603 SMD 10 k Panasonic-ECG ERJ-3EKF1002V DFLS120 Diodes Inc. DFLS120L-7 Boost Diode 1N4148 Diodes Inc. 1N4448WS-7-F CB 100 nF AVX Corp. 0603YC104KAT2A Cap. 0.1 µF 16V ceramic X7R 0603 10% DZ 7.5V Zener Diodes Inc. MMSZ5236BS-7-F Diode Zener 7.5V 200 mW SOD-323 CZ 1 µF Taiyo Yuden LMK107B7105KA-T Cap. ceramic 1.0UF 10V X7R 0603 RZ 1 k Panasonic-ECG ERJ-8ENF1001V FW Diode FIGURE 6-4: Res. 10.0 KΩ 1/10W 1% 0603 SMD Diode Schottky 20V 1A POWERDI123 Diode switch 75V 200 mW SOD-323 Res. 1.00K Ohm 1/4W 1% 1206 SMD Typical Application 10V to 16V VIN to 2.5V VOUT. 2014 Microchip Technology Inc. DS20005308B-page 29 MCP16331 Boost Diode EN BOOST CB L VIN 4V to 50V MCP16331 VOUT SW 3.3V VIN COUT FW Diode CIN GND RTOP FB RBOT Component CIN COUT L RTOP RBOT Value Manufacturer Part Number 2 x 10 µF TDK 10 µF Taiyo Yuden JMK107BJ106MA-T Comment C5750X7S2A106M230KB Capacitor, 10 µF, 100V, X7S, 2220 Cap. ceramic 10 µF 6.3V X5R 0603 15 µH Coilcraft LPS3015-153MLB Inductor power 15 µH 0.61A SMD 31.6 k Panasonic-ECG ERJ-2RKF3162X Res. 31.6 KΩ 1/10W 1% 0402 SMD 10 k Panasonic-ECG ERJ-3EKF1002V BAT46WH NXP BAT46WH Boost Diode 1N4148 Diodes Inc. 1N4448WS-7-F Diode switch 75V 200 mW SOD-323 CB 100 nF TDK Corp. C1005X5R0J104M Cap. ceramic 0.10 µF 6.3V X5R 0402 FW Diode FIGURE 6-5: DS20005308B-page 30 Res. 10.0 KΩ 1/10W 1% 0603 SMD BAT46WH - DIODE, SCHOTTKY, 100V, 0.25A, SOD123F Typical Application 4V to 50V VIN to 3.3V VOUT at 150 mA. 2014 Microchip Technology Inc. MCP16331 7.0 PACKAGING INFORMATION 7.1 Package Marking Information 6-Lead SOT-23 Example XXNN MF25 8-Lead TDFN (2x3x0.75 mm) Example ACD 415 25 Legend: XX...X Y YY WW NNN e3 * Note: Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code Pb-free JEDEC® designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3) can be found on the outer packaging for this package. In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. 2014 Microchip Technology Inc. DS20005308B-page 31 MCP16331 /$ !$%$ 0".!1 !!$ 20 &$$"$ $$ ,33... 3 0 b 4 N E E1 PIN 1 ID BY LASER MARK 1 2 3 e e1 D A A2 c φ L A1 L1 4$! !5 $! 6% 9&2! 55## 6 6 67 8 2$ )*+ 7%$!"5"2$ *+ 7-:$ ; ""200!! < ; ) $"&& ; ) 7-="$ # ; ""20="$ # ; < 7-5$ ; /$5$ 5 ; /$ $ 5 ) ; < /$ > ; > 5"0!! < ; 5"="$ 9 ; ) !!"#"$%" "&! $%!!"&! $%!!!$'" !"$ #() *+, *! !$'$-%!..$%$$! !" . +<* DS20005308B-page 32 2014 Microchip Technology Inc. MCP16331 Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging 2014 Microchip Technology Inc. DS20005308B-page 33 MCP16331 Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging DS20005308B-page 34 2014 Microchip Technology Inc. MCP16331 Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging 2014 Microchip Technology Inc. DS20005308B-page 35 MCP16331 ! " # $%&'())*+,-./"# /$ !$%$ 0".!1 !!$ 20 &$$"$ $$ ,33... 3 0 DS20005308B-page 36 2014 Microchip Technology Inc. MCP16331 APPENDIX A: REVISION HISTORY Revision B (October 2014) The following is a list of modifications: 1. Added edits to incorporate the AEC-Q100 qualification. Revision A (June 2014) • Original Release of this Document. 2014 Microchip Technology Inc. DS20005308B-page 37 MCP16331 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. [X](1) X /XX Device Tape and Reel Option Temperature Range Package Device: MCP16331: High-Voltage Input Integrated Switch StepDown Regulator MCP16331T: High-Voltage Input Integrated Switch StepDown Regulator (Tape and Reel) Tape and Reel Option: T Temperature Range: E Package: CH = Plastic SOT-23, 6-lead MNY*= Plastic Dual Flat TDFN, 8-lead Examples: a) b) MCP16331T-E/CH: Tape and Reel, Extended Temperature, 6LD SOT-23 package MCP16331T-E/MNY: Tape and Reel, Extended Temperature, 8LD TDFN package = Tape and Reel(1) = -40°C to +125°C Note 1: * Y = Nickel palladium gold manufacturing designator. Only available on the TDFN package. DS20005308B-page 38 Tape and Reel identifier only appears in the catalog part number description. This identifier is used for ordering purposes and is not printed on the device package. Check with your Microchip Sales Office for package availability with the Tape and Reel option. 2014 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet. • Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. • There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. • Microchip is willing to work with the customer who is concerned about the integrity of their code. • Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, dsPIC, FlashFlex, flexPWR, JukeBlox, KEELOQ, KEELOQ logo, Kleer, LANCheck, MediaLB, MOST, MOST logo, MPLAB, OptoLyzer, PIC, PICSTART, PIC32 logo, RightTouch, SpyNIC, SST, SST Logo, SuperFlash and UNI/O are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. The Embedded Control Solutions Company and mTouch are registered trademarks of Microchip Technology Incorporated in the U.S.A. Analog-for-the-Digital Age, BodyCom, chipKIT, chipKIT logo, CodeGuard, dsPICDEM, dsPICDEM.net, ECAN, In-Circuit Serial Programming, ICSP, Inter-Chip Connectivity, KleerNet, KleerNet logo, MiWi, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, MultiTRAK, NetDetach, Omniscient Code Generation, PICDEM, PICDEM.net, PICkit, PICtail, RightTouch logo, REAL ICE, SQI, Serial Quad I/O, Total Endurance, TSHARC, USBCheck, VariSense, ViewSpan, WiperLock, Wireless DNA, and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. Silicon Storage Technology is a registered trademark of Microchip Technology Inc. in other countries. GestIC is a registered trademarks of Microchip Technology Germany II GmbH & Co. KG, a subsidiary of Microchip Technology Inc., in other countries. All other trademarks mentioned herein are property of their respective companies. © 2014, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. ISBN: 978-1-63276-694-6 QUALITY MANAGEMENT SYSTEM CERTIFIED BY DNV == ISO/TS 16949 == 2014 Microchip Technology Inc. Microchip received ISO/TS-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company’s quality system processes and procedures are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified. 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