DMHC4035LSD

DMHC4035LSD
40V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE
Product Summary
Device
RDS(ON) max
ID max
TA = +25°C
•
2 x N + 2 x P channels in a SOIC package
•
Low On-Resistance
45mΩ @ VGS = 10V
4.5A
•
Low Input Capacitance
4A
•
Fast Switching Speed
65mΩ @ VGS = -10V
-3.7A
•
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
100mΩ @ VGS = -4.5V
-2.9A
V(BR)DSS
N-Channel
P-Channel
40V
-40V
58mΩ @ VGS = 4.5V
Description
•
Halogen and Antimony Free. “Green” Device (Note 3)
•
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
This new generation complementary MOSFET H-Bridge features low
•
on-resistance achievable with low gate drive.
•
Case: SO-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Applications
•
Moisture Sensitivity: Level 1 per J-STD-020
•
DC Motor Control
•
Terminal Connections Indicator: See diagram
•
DC-AC Inverters
•
Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
•
Weight: 0.074 grams (approximate)
P2G
SO-8
N2D/P2D
P1G
P1S/P2S
NEW PRODUCT
ADVANCE
INFORMATION
NEW PRODUCT
Features
H-Bridge
N2G
N1S/N2S
N1D/P1D
N1G
Top View
Pin Configuration
Top View
Internal Schematic
Ordering Information (Note 4)
Part Number
DMHC4035LSD-13
Notes:
Compliance
Standard
Case
SO-8
Packaging
2500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
8
5
= Manufacturer’s Marking
C4035LS = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
C4035LS
YY WW
1
DMHC4035LSD
Document number: DS36287 Rev. 1 - 2
4
1 of 9
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January 2014
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DMHC4035LSD
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
PD
1.5
W
RθJA
85
53
°C/W
RθJC
15
TJ, TSTG
-55 to +150
°C
Value
Units
Total Power Dissipation (Note 5)
Steady State
t<10s
NEW PRODUCT
ADVANCE
INFORMATION
NEW PRODUCT
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
Maximum Ratings N-CHANNEL (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Drain-Source Voltage
VDSS
40
V
Gate-Source Voltage
VGSS
±20
V
A
Continuous Drain Current (Note 5) VGS = 10V
Continuous Drain Current (Note 5) VGS = 4.5V
Steady
State
TA = +25°C
TA = +70°C
ID
4.5
3.5
t<10s
TA = +25°C
TA = +70°C
ID
5.8
4.5
A
Steady
State
TA = +25°C
TA = +70°C
ID
4
3.1
A
t<10s
TA = +25°C
TA = +70°C
ID
5.1
4
A
IS
1.5
A
IDM
25
A
Symbol
Value
Units
VDSS
-40
V
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Maximum Ratings P-CHANNEL (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = -10V
Continuous Drain Current (Note 5) VGS = -4.5V
VGSS
±20
V
Steady
State
TA = +25°C
TA = +70°C
ID
-3.7
-2.9
A
t<10s
TA = +25°C
TA = +70°C
ID
-4.8
-3.8
A
Steady
State
TA = +25°C
TA = +70°C
ID
-2.9
-2.3
A
t<10s
TA = +25°C
TA = +70°C
ID
-3.9
-3.0
A
IS
-1.5
A
IDM
-15
A
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Note:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
DMHC4035LSD
Document number: DS36287 Rev. 1 - 2
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January 2014
© Diodes Incorporated
DMHC4035LSD
Electrical Characteristics N-CHANNEL (@TA = +25°C, unless otherwise specified.)
NEW PRODUCT
ADVANCE
INFORMATION
NEW PRODUCT
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
BVDSS
40
—
VGS = 0V, ID = 250μA
IDSS
—
—
—
1
V
Zero Gate Voltage Drain Current
μA
VDS = 40V, VGS = 0V
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
IGSS
—
—
±100
nA
VGS = ±20V, VDS = 0V
V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance
VGS(th)
RDS (ON)
1
—
3
—
26
45
—
35
58
0.7
1
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
VSD
—
Ciss
—
574
—
Output Capacitance
Coss
—
87.8
—
Reverse Transfer Capacitance
Crss
—
38.7
—
Gate resistance
Rg
—
1.6
—
Total Gate Charge (VGS = 4.5V)
Qg
—
5.9
—
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Qg
—
12.5
—
Qgs
—
1.7
—
Gate-Drain Charge
Qgd
—
2.2
—
Turn-On Delay Time
tD(on)
—
3.1
—
mΩ
VGS = 10V, ID = 3.9A
VGS = 4.5V, ID = 3.5A
V
VGS = 0V, IS = 1.25A
pF
VDS = 20V, VGS = 0V,
f = 1MHz
Ω
VDS = 0V, VGS = 0V, f = 1MHz
nC
VDS = 20V, ID = 3.9A
ns
VDD = 20V, VGS = 10V,
RL = 20Ω, RG = 6Ω,
Turn-On Rise Time
tr
—
2.6
—
Turn-Off Delay Time
tD(off)
—
15
—
Turn-Off Fall Time
tf
—
5.5
—
Reverse Recovery Time
trr
—
6.5
—
ns
Reverse Recovery Charge
Qrr
—
1.2
—
nC
IF = 3.9A, di/dt = 500A/μs
Electrical Characteristics P-CHANNEL (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
BVDSS
-40
—
—
V
VGS = 0V, ID = -250μA
Zero Gate Voltage Drain Current
IDSS
—
—
-1
μA
VDS = -40V, VGS = 0V
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
IGSS
—
—
±100
nA
VGS = ±20V, VDS = 0V
V
Static Drain-Source On-Resistance
VGS(th)
RDS (ON)
-1
—
-3
—
49
65
—
73
100
mΩ
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
VSD
—
-0.7
-1.2
V
Ciss
—
587
—
pF
Output Capacitance
Coss
—
88.1
—
pF
Reverse Transfer Capacitance
Crss
—
40.2
—
pF
Gate resistance
Rg
—
12.3
—
Ω
Total Gate Charge (VGS = -4.5V)
Qg
—
5.4
—
nC
Total Gate Charge (VGS = -10V)
Gate-Source Charge
Qg
—
11.1
—
nC
Qgs
—
1.5
—
nC
Gate-Drain Charge
Qgd
—
2
—
nC
Turn-On Delay Time
tD(on)
—
3.6
—
ns
Turn-On Rise Time
tr
—
2.9
—
ns
Turn-Off Delay Time
tD(off)
—
36.3
—
ns
Turn-Off Fall Time
tf
—
15.3
—
ns
Reverse Recovery Time
trr
—
15.5
—
ns
Reverse Recovery Charge
Qrr
—
16.9
—
nC
Notes:
VDS = VGS, ID = -250μA
VGS = -10V, ID = -4.2A
VGS = -4.5V, ID = -3.3A
VGS = 0V, IS = -1A
VDS = -20V, VGS = 0V,
f = 1MHz
VDS = 0V, VGS = 0V, f = 1MHz
VDS = -20V, ID = -4.2A
VDD = -15V, VGS = -10V,
RG = 6Ω, ID = -1A
IF = -4.2A, di/dt = 500A/μs
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
DMHC4035LSD
Document number: DS36287 Rev. 1 - 2
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January 2014
© Diodes Incorporated
DMHC4035LSD
Typical Characteristics - N-CHANNEL
20
18
20
VGS = 3.5V
VGS = 10V
VGS = 5.0V
16
VGS = 4.5V
12
VGS = 4.0V
10
VGS = 3.0V
8
6
VGS = 2.3V
0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0.045
0.04
VGS = 4.5V
0.035
VGS = 10V
0.025
0.02
0.015
0
2
8
6
TA = 150°C
TA = 125°C
4
6
8 10 12 14 16 18
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
TA = 85°C
TA = 25°C
TA = -55°C
0
0.5
1 1.5 2 2.5 3 3.5 4 4.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
5
0.2
0.18
ID = 3.9A
0.16
0.14
ID = 3.5A
0.12
0.1
0.08
0.06
0.04
0.02
20
00
2
4
6
8 10 12 14 16 18
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristics
20
1.8
0.08
VGS = 4.5V
0.06
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
T A = 150°C
0.07
TA = 125°C
TA = 85°C
0.05
TA = 25°C
0.04
0.03
T A = -55°C
0.02
0.01
0
10
0
5
0.05
0.01
12
2
1
2
3
4
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
0.03
14
4
VGS = 2.5V
2
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
14
4
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
NEW PRODUCT
ADVANCE
INFORMATION
NEW PRODUCT
16
0
VDS = 5.0V
18
0
2
4
6
8 10 12 14 16 18
ID, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
DMHC4035LSD
Document number: DS36287 Rev. 1 - 2
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1.6
1.4
VGS = 10 V
ID = 10A
VGS = 5V
ID = 5A
1.2
1
0.8
0.6
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 6 On-Resistance Variation with Temperature
January 2014
© Diodes Incorporated
VGS(th), GATE THRESHOLD VOLTAGE (V)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
2.5
0.08
0.07
0.06
VGS = 5V
ID = 5A
0.05
0.04
VGS = 10 V
ID = 10A
0.03
0.02
0.01
0
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 7 On-Resistance Variation with Temperature
2
ID = 1mA
ID = 250µA
1.5
1
0.5
-50
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
1000
20
C iss
CT, JUNCTION CAPACITANCE (pF)
18
IS, SOURCE CURRENT (A)
16
14
12
TA = 150°C
10
TA = 25°C
8
TA = 125°C
6
4
T A = 85°C
T A = -55°C
2
0
0
100
Coss
C rss
10
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
0
5
10
15
20
25
30
35
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
40
100
10
VDS = 20V
ID = 3.9A
8
ID, DRAIN CURRENT (A)
VGS GATE THRESHOLD VOLTAGE (V)
NEW PRODUCT
ADVANCE
INFORMATION
NEW PRODUCT
DMHC4035LSD
6
4
2
0
0
10
DC
PW = 10s
1
PW = 1s
PW = 100ms
PW = 10ms
0.1 T
J(max) = 150°C
PW = 1ms
PW = 100µs
TA = 25°C
VGS = 4.5V
Single Pulse
DUT on 1 * MRP Board
2
4
6
8
10
12
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
DMHC4035LSD
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0.01
0.1
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
100
January 2014
© Diodes Incorporated
DMHC4035LSD
Typical Characteristics - P-CHANNEL
15
12
-ID, DRAIN CURRENT (A)
-ID, DRAIN CURRENT (A)
VDS = -5.0V
VGS = -3.5V
VGS = -5.0V
12
9
VGS = -3.0V
6
VGS = -2.5V
3
9
6
T A = 150°C
3
T A = 125°C
VGS = -2.0V
0
1
2
3
4
-VDS, DRAIN -SOURCE VOLTAGE (V)
Figure 13 Typical Output Characteristics
5
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0.2
0.18
0.16
0.14
0.12
VGS = -4.5V
0.1
0.08
0.06
VGS = -10V
0.04
0.02
0
0
2
4
6
8 10 12 14 16 18
-ID, DRAIN SOURCE CURRENT (A)
Figure 15 Typical On-Resistance vs.
Drain Current and Gate Voltage
T A = 85°C
TA = 25°C
TA = -55°C
0
0
1
2
3
4
-VGS, GATE-SOURCE VOLTAGE (V)
Figure 14 Typical Transfer Characteristics
5
0.5
ID = -4.2A
0.45
0.4
0.35
0.3
0.25
ID = -3.3A
0.2
0.15
0.1
0.05
20
0
0
2
4
6
8 10 12 14 16 18
-VGS, GATE-SOURCE VOLTAGE (V)
Figure 16 Typical Transfer Characteristics
20
1.8
0.2
VGS = -4.5V
0.18
0.16
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
NEW PRODUCT
ADVANCE
INFORMATION
NEW PRODUCT
15
VGS = -10V
TA = 150°C
0.14
TA = 125°C
0.12
T A = 85°C
0.1
TA = 25°C
0.08
TA = -55°C
0.06
0.04
1.6
VGS = -10V
ID = -10A
1.4
1.2
VGS = -5V
ID = -5A
1
0.8
0.02
0
0
3
6
9
12
-ID, DRAIN SOURCE CURRENT (A)
Figure 17 Typical On-Resistance vs.
Drain Current and Temperature
DMHC4035LSD
Document number: DS36287 Rev. 1 - 2
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0.6
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 18 On-Resistance Variation with Temperature
January 2014
© Diodes Incorporated
2
VGS(TH), GATE THRESHOLD VOLTAGE (V)
RDS(on), DRAIN-SOURCE ON-RESISTANCE (Ω)
0.15
0.12
VGS = -5V
ID = -5A
0.09
VGS = -10V
ID = -10A
0.06
0.03
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 19 On-Resistance Variation with Temperature
1.8
1.6
-ID = 250µA
1.4
-ID = 1mA
1.2
1
0.8
0.6
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Figure 20 Gate Threshold Variation vs. Ambient Temperature
15
1000
CT, JUNCTION CAPACITANCE (pF)
-IS, SOURCE CURRENT (A)
Ciss
12
9
TA= 85°C
6
TA= 25°C
TA= 125°C
TA= 150°C
3
0
TA= -55°C
0
Coss
Crss
0
5
10
15
20
25
30
35
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 22 Typical Junction Capacitance
40
100
-ID, DRAIN CURRENT (A)
8
6
VDS = -20V
ID = -4.2A
4
10
DC
1
PW = 10s
PW = 1s
PW = 100ms
PW = 10ms
0.1 T
J(max) = 150°C
PW = 1ms
PW = 100µs
TA = 25°C
VGS = -4.5V
Single Pulse
DUT on 1 * MRP Board
2
0
100
10
0.3
0.6
0.9
1.2
1.5
-VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 21 Diode Forward Voltage vs. Current
10
-VGS, GATE-SOURCE VOLTAGE (V)
NEW PRODUCT
ADVANCE
INFORMATION
NEW PRODUCT
DMHC4035LSD
0
2
4
6
8
10
Qg, TOTAL GATE CHARGE (nC)
Figure 23 Gate-Charge Characteristics
DMHC4035LSD
Document number: DS36287 Rev. 1 - 2
12
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0.01
0.1
1
10
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 24 SOA, Safe Operation Area
100
January 2014
© Diodes Incorporated
DMHC4035LSD
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
RθJA(t) = r(t) * RθJA
RθJA = 110°C/W
Duty Cycle, D = t1/ t2
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Figure 25 Transient Thermal Resistance
10
100
1000
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
0.254
NEW PRODUCT
ADVANCE
INFORMATION
NEW PRODUCT
1
E1 E
A1
L
SO-8
Dim
Min
Max
A
1.75
A1
0.10
0.20
A2
1.30
1.50
A3
0.15
0.25
b
0.3
0.5
D
4.85
4.95
E
5.90
6.10
E1
3.85
3.95
e
1.27 Typ
h
0.35
L
0.62
0.82
0°
8°
θ
All Dimensions in mm
Gauge Plane
Seating Plane
Detail ‘A’
7°~9°
h
45°
Detail ‘A’
A2 A A3
b
e
D
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
Dimensions
X
Y
C1
C2
C1
C2
Value (in mm)
0.60
1.55
5.4
1.27
Y
DMHC4035LSD
Document number: DS36287 Rev. 1 - 2
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January 2014
© Diodes Incorporated
DMHC4035LSD
IMPORTANT NOTICE
NEW PRODUCT
ADVANCE
INFORMATION
NEW PRODUCT
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
www.diodes.com
DMHC4035LSD
Document number: DS36287 Rev. 1 - 2
9 of 9
www.diodes.com
January 2014
© Diodes Incorporated
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