Download Spec Sheet

850 EVO mSATA Solid State Drives
250 GB
500 GB
1 TB (1,000 GB)
MZ-M5E250BW
MZ-M5E500BW
MZ-M5E1T0BW
Improved speed
and performance,
ready to install
The advanced consumer SSD in an mSATA form factor,
powered by exclusive Samsung V-NAND technology.
• SATA 6Gb/s SSD for Client PCs
• mSATA
• Samsung Magician Software for
SSD management
• Samsung V-NAND
• Samsung Data Migration Software
Key features
V-NAND technology in the Samsung 850 EVO mSATA SSD
Samsung’s unique V-NAND flash memory architecture is a breakthrough in
overcoming the density, performance and endurance limitations of today’s
conventional planar NAND architecture. V-NAND is fabricated by stacking
cell layers vertically, rather than decreasing the cells’ dimensions to fit into
increasingly smaller form factors. The result is higher density and better
performance with a smaller footprint.
Optimized performance for everyday computing
Powered by Samsung’s cutting-edge V-NAND technology, the 850
EVO mSATA delivers top-class sequential and random read and write
performance to optimize everyday computing. The 850 EVO mSATA
seamlessly integrates V-NAND memory, a MGX controller, DRAM
memory and Samsung Magician software for high optimization. Like
the 2.5" form factor, the 850 EVO mSATA maximizes the user experience
with a trace-based benchmark, giving you form factor flexibility for SATA
6Gb/s interfaces.
Reinforcement of TurboWrite technology
Samsung was the first to introduce TurboWrite technology to sequential
write performance. With TurboWrite Technology, write speeds have been
significantly accelerated during data transfer by creating a high-performance
write buffer in an SSD. If a consecutive write operation (i.e. no idle time)
exceeds the size of a buffer, the transfer will exit TurboWrite and be
processed at “After TurboWrite” speeds. But since the buffer size is more
than sufficient for everyday computer use, users experience accelerated
speeds for most workloads.
Guaranteed endurance and reliability for maximum use
The 850 EVO mSATA Series delivers guaranteed endurance and reliability by
doubling the TeraBytes Written (TBW) compared to the previous generation
840 EVO Series. The 850 EVO mSATA Series is backed by an industry-leading
5 year warranty or 75TBW (250 GB)/150TBW (500 GB, 1 TB). With twice
the endurance of a typical NAND flash SSD, the 850 EVO mSATA Series
will keep working as long as you do.
Enhanced reliability with improved sustained performance
The 850 EVO mSATA Series boasts dependable performance up to 40%
longer than the 840 EVO Series, with minimized performance degradation.
You can use it every day, knowing it will perform at the highest levels for years.
Advanced data encryption
Self-Encrypting Drive (SED) security technology helps keep your data
safe. An AES 256-bit hardware-based encryption engine secures your
data without any of the performance degradation you might experience
with software-based encryption. The 850 EVO mSATA is compliant with
advanced security management solutions (TCG Opal and IEEE 1667),
and you can erase or initialize data with the PSID crypto erase service.
SSD sales:
Efficient power management for all PC applications
1-866-SAM4BIZ
samsung.com/ssd
samsung.com/samsungssd
Since V-NAND uses half the power of 2D planar NAND, you save up to 50%
more power during write operations than with the 840 EVO Series. And with
a highly efficient 2mW Device Sleep feature and a controller optimized for
V-NAND, you get longer battery life.
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Samsung 850 EVO mSATA
Solid State Drives
MZ-M5E250BW
MZ-M5E500BW
MZ-M5E1T0BW
Usage Application
Client PCs
Client PCs
Client PCs
Capacity1
250GB
500GB
1TB (1,000GB)
Dimensions (WxHxD)
(29.85±0.15) x (50.80±0.15) x Max 3.85 (mm) / 1.18" x 2.00" x 0.15"
(29.85±0.15) x (50.80±0.15) x Max 3.85 (mm) / 1.18" x 2.00" x 0.15"
(29.85±0.15) x (50.80±0.15) x Max 3.85 (mm) / 1.18" x 2.00" x 0.15"
Interface
SATA 6Gb/s (Compatible with SATA 3Gb/s and SATA 1.5Gb/s)
SATA 6Gb/s (Compatible with SATA 3Gb/s and SATA 1.5Gb/s)
SATA 6Gb/s (Compatible with SATA 3Gb/s and SATA 1.5Gb/s)
Form Factor
mSATA
mSATA
mSATA
Controller
Samsung MGX Controller
Samsung MGX Controller
Samsung MGX Controller
NAND Flash Memory
Samsung V-NAND Flash
Samsung V-NAND Flash
Samsung V-NAND Flash
DRAM Cache Memory
512MB LPDDR3
512MB LPDDR3
1GB LPDDR3
Sequential Read (Max.):
540 MB/s
540 MB/s
540 MB/s
Sequential Write3 (Max.):
520 MB/s
520 MB/s
520 MB/s
4KB Random Read (QD1)(Max.):
10,000 IOPS
10,000 IOPS
10,000 IOPS
4KB Random Write (QD1)(Max.):
40,000 IOPS
40,000 IOPS
40,000 IOPS
4KB Random Read (QD32)(Max.):
97,000 IOPS
97,000 IOPS
97,000 IOPS
4KB Random Write (QD32)(Max.):
88,000 IOPS
88,000 IOPS
88,000 IOPS
Data Security
AES 256-bit Full Disk Encryption (FDE)
TCG/Opal V2.0, Encrypted Drive (IEEE1667)
AES 256-bit Full Disk Encryption (FDE)
TCG/Opal V2.0, Encrypted Drive (IEEE1667)
AES 256-bit Full Disk Encryption (FDE)
TCG/Opal V2.0, Encrypted Drive (IEEE1667)
Weight (Max.)
8.5g
8.5g
8.5g
Reliability (MTBF)
1.5 Million Hours
1.5 Million Hours
1.5 Million Hours
TBW (Terabytes Written)
75TBW
150TBW
150TBW
Active Read/Write (Average/Max):
2.3W / 2.7W
2.3W / 2.7W
2.3W / 2.7W
Idle (Max.):
50mW
50mW
50mW
Device Sleep (Typ.):
2mW
2mW
3mW
TRIM (Required OS Support), Garbage Collection, S.M.A.R.T
TRIM (Required OS Support), Garbage Collection, S.M.A.R.T
TRIM (Required OS Support), Garbage Collection, S.M.A.R.T
Operating:
0°C to 70°C
0°C to 70°C
0°C to 70°C
Non-Operating:
-40°C to 85°C
-40°C to 85°C
-40°C to 85°C
Humidity
5% to 95%, Non-Condensing
5% to 95%, Non-Condensing
5% to 95%, Non-Condensing
Vibration (Non-Operating)
20~2000Hz, 20G
20~2000Hz, 20G
20~2000Hz, 20G
Shock (Non-Operating)
1500G, Duration 0.5m Sec, 3 Axis
1500G, Duration 0.5m Sec, 3 Axis
1500G, Duration 0.5m Sec, 3 Axis
Warranty
5 Years Limited
5 Years Limited
5 Years Limited
Performance2
Power
Consumption4
Supporting Features
Temperature
1GB = 1,000,000,000 bytes. Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise).
1
Sequential performance measurements based on CrystalDiskMark v.3.0.1. Random performance measurements based on Iometer 1.1.0. Performance may vary based on SSD’s firmware version, system hardware and configuration. Test system configuration: Intel Core i7-4790K @ 4.0GHz,
DDR3 1600MHz 8GB, OS: Windows 7 Ultimate x64 SP1, IRST 13.0.3.1001, Chipset: Intel® Z97PRO.
2
Sequential Write performance measurements based on TurboWrite technology. The sequential write performances after TurboWrite region are 300MB/s (250GB) and 500MB/s (500GB).
3
Power consumption measured with Iometer 1.1.0 with Intel i7-4770K, DDR3 8GB, Intel® DH87RL, OS: Windows 7 Ultimate x64 SP1.
4
Learn more
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Product support 1-866-SAM4BIZ
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©2016 Samsung Electronics America, Inc. Samsung is a registered mark of Samsung Electronics Corp., Ltd. Specifications and design are subject to change without notice. Non-metric weights and measurements are approximate. All brand, product, service names and
logos are trademarks and or registered trademarks of their respective manufacturers and companies. See samsung.com for detailed information. Printed in USA. SSD-850EVOMSATADSHT-JUN16T
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