DMN2013UFDE

DMN2013UFDE
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
RDS(ON) MAX
Package
ID
TA = +25°C

0.6mm profile – ideal for low profile applications

PCB footprint of 4mm
11m @ VGS = 4.5V
U-DFN2020-6
10.5A

Low Gate Threshold Voltage
13mΩ @ VGS = 2.5V
U-DFN2020-6
9.4A

ESD Protected Gate
30m @ VGS = 1.8V
U-DFN2020-6
6.5A

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
50mΩ @ VGS = 1.5V
U-DFN2020-6
5.5A

Halogen and Antimony Free. “Green” Device (Note 3)
V(BR)DSS
20V
Features
Description
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
2

Qualified to AEC-Q101 Standards for High Reliability

PPAP Capable (Note 4) Mechanical Data


Case: U-DFN2020-6
Case Material: Molded Plastic, “Green” Molding Compound.
UL
Flammability Classification Rating 94V-0
Applications

General Purpose Interfacing Switch

Power Management Functions

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish – NiPdAu over Copper leadframe. Solderable
Drain
per MIL-STD-202, Method 208 e4

Weight: 0.0065 grams (approximate)
U-DFN2020-6
Gate
Gate
Protection
Diode
ESD PROTECTED
Bottom View
Pin Out
Source
Equivalent Circuit
Ordering Information (Note 5)
Part Number
DMN2013UFDE-7
DMN2013UFDEQ-7
DMN2013UFDE-13
DMN2013UFDEQ-13
Notes:
Compliance
Standard
Automotive
Standard
Automotive
Case
U-DFN2020-6
U-DFN2020-6
U-DFN2020-6
U-DFN2020-6
Quantity per reel
3,000
3,000
10,000
10,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.
5. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
N6
Date Code Key
Year
Code
Month
Code
2011
Y
Jan
1
2012
Z
Feb
2
DMN2013UFDE
Document number: DS35701 Rev. 7 - 2
Mar
3
YM
Marking Information
N6 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
2013
A
Apr
4
May
5
2014
B
Jun
6
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2015
C
Jul
7
Aug
8
2016
D
Sep
9
Oct
O
2017
E
Nov
N
Dec
D
April 2013
© Diodes Incorporated
DMN2013UFDE
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 7) VGS = 4.5V
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Steady
State
t < 10s
Continuous Drain Current (Note 7) VGS = 2.5V
Steady
State
t <1 0s
ID
Value
20
±8
10.5
8.5
ID
12.5
10.0
A
ID
9.4
7.5
A
A
11.2
8.8
80
2.5
ID
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Maximum Body Diode Continuous Current
Units
V
V
IDM
IS
A
A
A
Thermal Characteristics
Characteristic
Symbol
TA = +25°C
TA = +70°C
Steady state
t<10s
TA = +25°C
TA = +70°C
Steady state
t<10s
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
Value
0.66
0.42
189
132
2.03
1.31
61
43
9.3
-55 to +150
PD
RJA
PD
RJA
RJC
TJ, TSTG
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
20
—
—
—
—
—
—
1
±2
V
µA
µA
VGS = 0V, ID = 250μA
VDS = 16V, VGS = 0V
VGS = ±8V, VDS = 0V
VGS(th)
0.5
RDS (ON)
—
|Yfs|
VSD
—
—
1.1
11
13
30
50
—
1.2
V
Static Drain-Source On-Resistance
—
8.4
9.8
12
15
10
—
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 8.5A
VGS = 2.5V, ID = 8.5A
VGS = 1.8V, ID = 1A
VGS = 1.5V, ID = 0.5A
VDS = 5V, ID = 4A
VGS = 0V, IS = 8.5A
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
—
—
—
—
—
—
—
—
—
—
—
—
2453
275
257
1.2
14.3
25.8
1.8
2.1
9.9
24.5
66.4
20.8
—
—
—
—
—
—
—
—
—
—
—
—
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 8V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
m
S
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
Test Condition
VDS = 10V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VDS = 10V, ID = 8.5A
VDS = 10V, ID = 8.5A
VGS = 4.5V, RG = 1.8Ω
6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
8. Short duration pulse test used to minimize self-heating effect
9. Guaranteed by design. Not subject to production testing
DMN2013UFDE
Document number: DS35701 Rev. 7 - 2
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DMN2013UFDE
30
20
VDS = 5.0V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
25
20
15
10
15
10
TA = 150°C
TA = 125°C
5
TA = 85°C
5
T A = 25°C
TA = -55°C
0
0.5
1
1.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig.1 Typical Output Characteristic
0.020
0.015
VGS = 1.5V
0.010
VGS = 1.8V
VGS = 2.5V
VGS = 4.5V
0.005
0
0
4
8
12
16
ID, DRAIN-SOURCE CURRENT
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.6
VGS = 2.5V
ID = 5A
1.2
VGS = 4.5V
ID = 10A
1.0
0.8
0.6
50
VGS, GATE-SOURCE VOLTAGE
Fig.2 Typical Transfer Characteristics
0.020
VGS = 4.5V
0.015
TA = 125°C
0.010
Document number: DS35701 Rev. 7 - 2
TA = 85°C
TA = -55°C
0.005
0
0
5
10
15
ID, DRAIN CURRENT
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
20
0.020
0.015
VGS = 2.5V
ID = 5A
0.010
VGS = 4.5V
ID = 10A
0.005
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Fig. 5 On-Resistance Variation with Temperature
DMN2013UFDE
TA = 150°C
TA = 25°C
20
1.8
1.4
0
2
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0
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0
- 50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Fig. 6 On-Resistance Variation with Temperature
April 2013
© Diodes Incorporated
DMN2013UFDE
20
1.2
IS, SOURCE CURRENT (V)
VGS(th), GATE THRESHOLD VOLTAGE (V)
1.4
1.0
0.8
ID = 1mA
0.6
ID = 250µA
0.4
15
T A = 25°C
10
5
0.2
0
-50
0
10,000
10
VGS GATE THRESHOLD VOLTAGE (V)
CT, JUNCTION CAPACITANCE (pF)
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
Ciss
1,000
Coss
Crss
f = 1MHz
100
0
5
10
15
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
20
0
8
0.2
0.4
0.6
0.8
1.0
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.2
VDS = 10V, ID = 8.5A
6
4
2
0
0
5
10
15
20
25
30
35
Qg, TOTAL GATE CHARGE (nC)
Fig. 10 Gate Charge
40
100
ID, DRAIN CURRENT (A)
RDS(on)
Limited
PW = 100µs
10
DC
1
PW = 10s
PW = 1s
0.1 T
J(max) = 150°C
PW = 100ms
PW = 10ms
PW = 1ms
TA = 25°C
VGS = 8V
Single Pulse
DUT on 1 * MRP Board
0.01
0.01
0.1
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 11 SOA, Safe Operation Area
DMN2013UFDE
Document number: DS35701 Rev. 7 - 2
100
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r(t), TRANSIENT THERMAL RESISTANCE
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
RJA(t) = r(t) * RJA
RJA = 65C/W
Duty Cycle, D = t1/t2
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Fig. 12 Transient Thermal Resistance
10
100
1,000
Package Outline Dimensions
A1
A
A3
D
b1
K1
D2
E E2
L1
L(2X)
K2
Z(4X)
e
b(6X)
U-DFN2020-6
Type E
Dim
Min
Max
Typ
A
0.57
0.63
0.60
A1
0
0.05
0.03
A3
—
—
0.15
b
0.25
0.35
0.30
b1
0.185 0.285 0.235
D
1.95
2.05
2.00
D2
0.85
1.05
0.95
E
1.95
2.05
2.00
E2
1.40
1.60
1.50
e
—
—
0.65
L
0.25
0.35
0.30
L1
0.82
0.92
0.87
K1
—
—
0.305
K2
—
—
0.225
Z
—
—
0.20
All Dimensions in mm
Suggested Pad Layout
Dimensions
Y3 Y2
X2
Y1
X1
X (6x)
DMN2013UFDE
Document number: DS35701 Rev. 7 - 2
C
C
X
X1
X2
Y
Y1
Y2
Y3
Value
(in mm)
0.650
0.400
0.285
1.050
0.500
0.920
1.600
2.300
Y (2x)
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
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final and determinative format released by Diodes Incorporated.
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
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failure of the life support device or to affect its safety or effectiveness.
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
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DMN2013UFDE
Document number: DS35701 Rev. 7 - 2
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