DMN3027LFG

DMN3027LFG
Green
N-CHANNEL ENHANCEMENT MODE MOSFET
®
POWERDI
Product Summary

Low RDS(ON) – ensures on state losses are minimized

Small form factor thermally efficient package enables higher
density end products

Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product

100% UIS (Avalanche) Rated

100% Rg Tested

Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)
making it ideal for high-efficiency power management applications.

Qualified to AEC-Q101 Standards for High Reliability
Applications
Mechanical Data

Backlighting

Case: POWERDI®3333-8

DC-DC Converters


Power Management Functions
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminal Connections: See Diagram Below

Terminals: Finish  Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208

Weight: 0.072 grams (Approximate)
RDS(ON) max
ID
TA = +25°C
18.6mΩ @ VGS = 10V
8.0A
26.5mΩ @ VGS = 4.5V
6.5A
BVDSS
NEW PRODUCT
ADVANCE INFORMATION
Features
30V
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
POWERDI®3333-8
D
Pin 1
S
S
S
G
G
D
D
S
D
D
Top View
Bottom View
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMN3027LFG-7
DMN3027LFG-13
Notes:
Case
POWERDI®3333-8
POWERDI®3333-8
Packaging
2,000 / Tape & Reel
3,000 / Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
N37
N37 = Product Marking Code
YYWW = Date Code Marking
YY = Last Digit of Year (ex: 15 for 2015)
WW = Week Code (01 – 53)
POWERDI is a registered trademark of Diodes Incorporated.
DMN3027LFG
Document number: DS38020 Rev. 3 - 2
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October 2015
© Diodes Incorporated
DMN3027LFG
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
NEW PRODUCT
ADVANCE INFORMATION
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = 10V
Steady
State
Continuous Drain Current (Note 6) VGS = 10V
Steady
State
Continuous Drain Current (Note 6) VGS = 10V
t10s
Continuous Drain Current (Note 6) VGS = 4.5V
Steady
State
Continuous Drain Current (Note 6) VGS = 4.5V
t10s
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
ID
Value
30
±25
5.3
4.2
Unit
V
V
ID
8.0
6.3
A
ID
9.5
7.7
A
ID
6.5
4.9
A
A
IDM
IAR
EAR
7.8
6.2
70
18
16
A
A
mJ
Symbol
PD
RθJA
PD
RθJA
PD
RθJA
TJ, TSTG
Max
1.0
130.6
2.07
62.5
3.0
43.8
-55 to +150
Unit
W
°C/W
W
°C/W
W
°C/W
°C
ID
Pulsed Drain Current (Note 7)
Avalanche Current (Notes 7 & 8)
Repetitive Avalanche Energy (Notes 7 & 8) L = 0.1mH
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5)
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6)
Power Dissipation (Note 6) t10s
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6) t10s
Operating and Storage Temperature Range
Notes:
5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
6. Device mounted on 2” x 2” FR-4 PCB with high coverage 2 oz. Copper, single sided.
7. Repetitive rating, pulse width limited by junction temperature.
8. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C.
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
30
-
-
100
±100
V
nA
nA
VGS = 0V, ID = 250µA
VDS = 30V, VGS = 0V
VGS = ±25V, VDS = 0V
VGS(TH)
RDS(ON)
VSD
1.2
13.5
22
0.7
1.8
18.6
26.5
1.0
V
Static Drain-Source On-Resistance
0.9
-
VDS = VGS, ID = 250μA
VGS = 10V, ID = 10A
VGS = 4.5V, ID = 7.5A
VGS = 0V, IS = 1A
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
-
580
110
70
2.0
5.3
11.3
1.9
1.9
4.4
4.6
19.5
5.8
3.0
-
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge VGS = 4.5V
Total Gate Charge VGS = 10V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
mΩ
V
pF
Test Condition
VDS = 15V, VGS = 0V,
f = 1.0MHz
Ω
VDS = 0V, VGS = 0V, f = 1MHz
VGS = 4.5V, VDS = 15V, ID = 10A
nC
VGS = 10V, VDS = 15V,
ID = 10A
ns
ns
ns
ns
VGS = 10V, VDS = 15V,
RL = 15Ω, RG = 6Ω
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to production testing.
POWERDI is a registered trademark of Diodes Incorporated.
DMN3027LFG
Document number: DS38020 Rev. 3 - 2
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October 2015
© Diodes Incorporated
DMN3027LFG
30.0
30
VDS = 5.0V
VGS = 4.0V
25
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
VGS = 4.5V
25.0
20.0
15.0
VGS = 3.5V
10.0
VGS = 3.0V
5.0
20
15
10
TA = 125℃
5
TA = 150℃
VGS = 2.5V
0
0.0
0.5
1
1.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
0.032
0.028
0.024
0.02
VGS = 4.5V
0.016
0.012
VGS = 10V
0.008
0.004
0
0
5
10
15
20
0
2
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0
25
1.4
1 1.5 2 2.5 3 3.5 4 4.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
TA = 125℃
VGS = 4.5V, ID = 5A
1
TA = 150℃
0.035
0.03
0.025
TA = 85℃
0.02
TA = 25℃
0.015
TA = -55℃
0.01
0.005
0
0
5
10
15
20
ID, DRAIN CURRENT (A)
25
30
Figure 4. Typical On-Resistance vs. Drain Current and
Temperature
0.04
0.035
0.03
VGS = 4.5V, ID = 5A
0.025
1.2
5
VGS = 4.5V
0.04
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(Ω)
VGS = 10V, ID = 10A
TA = 25℃
TA = -55℃
0.5
0.045
30
1.6
TA = 85℃
0.05
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
NEW PRODUCT
ADVANCE INFORMATION
VGS = 10.0V
0.02
0.015
0.8
0.01
VGS = 10V, ID = 10A
0.005
0
0.6
-50
-25
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 5. On-Resistance Variation with Temperature
-50
-25
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Temperature
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DMN3027LFG
Document number: DS38020 Rev. 3 - 2
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30
ID = 1mA
IS, SOURCE CURRENT (A)
VGS(TH), GATE THRESHOLD VOLTAGE (V)
2
1.5
ID = 250μA
1
0.5
25
TA = 25oC
20
15
10
5
0
0
-50
-25
0
25
50
75
100
125
0
150
TJ, JUNCTION TEMPERATURE (℃)
0.2
0.4
0.6
0.8
1
VSD, SOURCE-DRAIN VOLTAGE (V)
1.2
Figure 8. Diode Forward Voltage vs. Current
Figure 7. Gate Threshold Variation vs. Temperature
1000
10000
CT, CAPACITANCE (pF)
IDSS, LEAKAGE CURRENT (nA)
f=1MHz
1000
TA = 150oC
100
TA = 125oC
Ciss
Coss
100
Crss
TA = 85oC
10
TA = 25oC
10
1
0
0
10
20
30
VDS, Drain-SOURCE VOLTAGE (V)
Figure 9. Typical Leakage Current vs. Drain-Source
Voltage
10
4
8
12
16
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Total Capacitance
20
400
P(PK), PEAK TRANSIENT POIWER (W)
VGS GATE VOLTAGE (V)
NEW PRODUCT
ADVANCE INFORMATION
DMN3027LFG
8
6
4
VDS = 15V, ID = 10A
2
0
0
2
4
6
8
10
12
Qg, Gate Charge (nC)
14
16
350
300
Single Pulse
RJA = 60C/W
RJA(t) = r (t) * RJA
TJ - TA = P * RJA(t)
250
200
150
100
50
0
0.0001 0.001 0.01
0.1
1
10
100 1,000
t1, PULSE DURATION TIME (sec)
Fig. 212.
Single
Pulse
Maximum
Figure
Single
Pulse
MaximumPower
PowerDissipation
Dissipation
Figure 11. Gate Charge
POWERDI is a registered trademark of Diodes Incorporated.
DMN3027LFG
Document number: DS38020 Rev. 3 - 2
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DMN3027LFG
100
100
PW =10µs
RDS(ON) Limited
10
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
PW =100µs
PW =1ms
PW =10ms
PW =100ms
PW =1s
1
0.1
TJ(Max) = 150℃ TA = 25℃
Single Pulse
DUT on 1*MRP Board
VGS = 10V
0.01
0.1
PW =10s
DC
PW =100µs
10
PW =1ms
1
PW =10ms
PW =100ms
PW =1s
0.1
TJ(Max) = 150℃ TA = 60℃
Single Pulse
DUT on 1*MRP Board
VGS = 4.5V
PW =10s
DC
0.01
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 13. SOA, Safe Operation Area
100
0.1
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 14. SOA, Safe Operation Area
100
1
r(t), TRANSIENT THERMAL RESISTANCE
NEW PRODUCT
ADVANCE INFORMATION
RDS(ON) Limited
D=0.5
D=0.3
0.1
D=0.7
D=0.9
D=0.1
D=0.05
D=0.02
0.01
D=0.01
D=0.005
RθJA(t) = r(t) * RθJA
RθJA = 60℃/W
Duty Cycle, D = t1 / t2
D=Single Pulse
0.001
1E-05
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Figure 15. Transient Thermal Resistance
10
100
1000
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DMN3027LFG
Document number: DS38020 Rev. 3 - 2
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DMN3027LFG
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
®
NEW PRODUCT
ADVANCE INFORMATION
POWERDI 3333-8
A1
A3
A
Seating Plane
D
L(4x)
D2
1
Pin #1 ID
b2(4x)
E
E2
e1
8
z(4x)
b
POWERDI®3333-8
Dim Min Max Typ
A
0.75 0.85 0.80
A1 0.00 0.05 0.02
A3

 0.203
b
0.27 0.37 0.32
b2
0.20


D
3.25 3.35 3.30
D2 2.22 2.32 2.27
E
3.25 3.35 3.30
E2 1.56 1.66 1.61
e
0.65


e1 0.79 0.89 0.84
L
0.35 0.45 0.40
L1
0.39


z

 0.515
All Dimensions in mm
L1(3x)
e
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
®
POWERDI 3333-8
X3
X2
8
Y2
X1
Y1
Y3
Y
Dimensions Value (in mm)
C
0.650
X
0.420
X1
0.420
X2
0.230
X3
2.370
Y
0.700
Y1
1.850
Y2
2.250
Y3
3.700
1
X
C
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DMN3027LFG
Document number: DS38020 Rev. 3 - 2
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DMN3027LFG
IMPORTANT NOTICE
NEW PRODUCT
ADVANCE INFORMATION
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
www.diodes.com
POWERDI is a registered trademark of Diodes Incorporated.
DMN3027LFG
Document number: DS38020 Rev. 3 - 2
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www.diodes.com
October 2015
© Diodes Incorporated
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