DMN6066SSS

DMN6066SSS
60V N-CHANNEL ENHANCEMENT MODE MOSFET
ADVANCE INFORMATION
Product Summary
V(BR)DSS
60V
Features and Benefits
ID
RDS(on)
TA = +25°C
66mΩ @ VGS = 10V
5.0A
97mΩ @ VGS = 4.5V
4.1A
•
Low on-resistance
•
Fast switching speed
•
•
•
•
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Description and Applications
Mechanical Data
This MOSFET is designed to minimize the on-state resistance and yet
maintain superior switching performance, making it ideal for high
efficiency power management applications.
•
•
•
•
•
•
Motor Control
•
Backlighting
•
DC-DC Converters
•
Power Management Functions
•
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram Below
Terminals: Finish – Tin Finish Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (Approximate)
D
SO-8
G
S
Top View
Top View
Equivalent Circuit
Ordering Information (Notes 4 & 5)
Part Number
DMN6066SSS-13
DMN6066SSSQ-13
Notes:
Compliance
Commercial
Automotive
Case
SO-8
SO-8
Packaging
2,500/Tape & Reel
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SO-8
N6066SS
YY
WW
DMN6066SSS
Document Number DS33047 Rev. 3 - 2
= Manufacturer’s Marking
N6066SS = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01 - 53)
1 of 9
www.diodes.com
April 2015
© Diodes Incorporated
DMN6066SSS
ADVANCE INFORMATION
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Single Pulsed Avalanche Energy
Single Pulsed Avalanche Current
Continuous Drain Current
VGS = 10V
Pulsed Drain Current
VGS = 10V
Continuous Source Current (Body diode)
Pulsed Source Current (Body diode)
(Note 6)
(Note 11)
(Note 11)
(Note 8)
TA = +70°C (Note 8)
(Note 7)
(Note 9)
(Note 8)
(Note 9)
Symbol
VDSS
VGS
EAS
IAS
ID
IDM
IS
ISM
Value
60
±20
37.5
5.0
5.0
4.0
3.7
23
4.0
23
Unit
V
V
mJ
A
Value
1.56
12.5
2.81
22.5
80.0
44.5
37.0
-55 to 150
Unit
A
A
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
Notes:
Symbol
(Note 7)
PD
(Note 8)
(Note 7)
(Note 8)
(Note 10)
RθJA
RθJL
TJ, TSTG
W
mW/°C
°C/W
°C
6. AEC-Q101 VGS maximum is ±16V.
7. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
8. Same as note (7), except the device is measured at t ≤ 10 sec.
9. Same as note (7), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.
10. Thermal resistance from junction to solder-point (at the end of the drain lead).
11. UIS in production with L = 3.0mH, IAS = 5.0A, RG = 25Ω, VDD=50V, starting TJ = +25°C.
DMN6066SSS
Document Number DS33047 Rev. 3 - 2
2 of 9
www.diodes.com
April 2015
© Diodes Incorporated
DMN6066SSS
1.6
RDS(on) Limited
Max Power Dissipation (W)
ID Drain Current (A)
10
1
DC
100m
1s
100ms
10m
10ms
Single Pulse
T amb=25°C
1m
100m
1ms
100µs
1
10
VDS Drain-Source Voltage (V)
1.4
25mm x 25mm
1oz FR4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
20
70
T amb=25°C
60
50
D=0.5
40
30
20
Single Pulse
D=0.2
D=0.05
10
0
100µ
D=0.1
1m
10m 100m
1
10
100 120 140 160
100
1k
Single Pulse
T amb=25°C
10
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Transient Thermal Impedance
Document Number DS33047 Rev. 3 - 2
80
100
Pulse Width (s)
DMN6066SSS
60
Derating Curve
Maximum Power (W)
80
40
Temperature (°C)
Safe Operating Area
Thermal Resistance (°C/W)
ADVANCE INFORMATION
Thermal Characteristics
Pulse Power Dissipation
3 of 9
www.diodes.com
April 2015
© Diodes Incorporated
DMN6066SSS
ADVANCE INFORMATION
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
BVDSS
60


V
ID = 250µA, VGS = 0V
Zero Gate Voltage Drain Current
IDSS


0.5
µA
VDS = 60V, VGS = 0V
Gate-Source Leakage
IGSS


±100
nA
VGS = ±20V, VDS = 0V
VGS(th)
1.0

3.0
V
ID = 250µA, VDS = VGS
Static Drain-Source On-Resistance (Note 12)
RDS (ON)

Forward Transconductance (Notes 12 & 13)
gfs
Diode Forward Voltage (Note 12)
VSD
Reverse Recovery Time (Note 13)
trr
Reverse Recovery Charge (Note 13)
Qrr
Input Capacitance
ON CHARACTERISTICS
Gate Threshold Voltage
0.048
0.066
0.068
0.097

19.2

S
VDS = 15V, ID = 6A

0.89
1.15
V
IS = 4.5A, VGS = 0V
23

ns

19.7

nC
Ciss

502

pF
Output Capacitance
Coss

45.7

pF
Reverse Transfer Capacitance
Crss

27.1

pF
Total Gate Charge (Note 14)
Qg

5.4

nC
Total Gate Charge (Note 14)
Qg

10.3

nC
Gate-Source Charge (Note 14)
Qgs

1.7

nC
Ω
VGS = 10V, ID = 4.5A
VGS = 4.5V, ID = 3.5A
IS = 2.4A, di/dt = 100A/µs
DYNAMIC CHARACTERISTICS (Note 13)
Gate-Drain Charge (Note 14)
Qgd

3.2

nC
Turn-On Delay Time (Note 14)
tD(on)

2.7

ns

ns
Turn-On Rise Time (Note 14)
tr

2.4
Turn-Off Delay Time (Note 14)
tD(off)

14.7

ns
tf

5.4

ns
Turn-Off Fall Time (Note 14)
Notes:
VDS = 30V, VGS = 0V
f = 1MHz
VGS = 4.5V
VGS = 10V
VDS = 30V
ID = 4.5A
VDD = 30V, VGS = 10V
ID = 1A, RG ≅ 6.0Ω
12. Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%.
13. For design aid only, not subject to production testing.
14. Switching characteristics are independent of operating junction temperatures.
DMN6066SSS
Document Number DS33047 Rev. 3 - 2
4 of 9
www.diodes.com
April 2015
© Diodes Incorporated
DMN6066SSS
10V
T = 150°C
4.5V
10
ID Drain Current (A)
ID Drain Current (A)
T = 25°C
4V
3.5V
1
0.1
3V
VGS
0.01
0.1
1
1
VGS
2V
2
3
4
5
VGS Gate-Source Voltage (V)
Typical Transfer Characteristics
Normalised RDS(on) and VGS(th)
T = 25°C
0.01
1
10
2.0
VGS = 10V
1.8
ID = 12A
1.6
RDS(on)
1.4
1.2
1.0
0.8
VGS = VDS
0.6
ID = 250uA
0.4
-50
0
VGS(th)
50
100
150
Tj Junction Temperature (°C)
Normalised Curves v Temperature
100
3V
VGS
10
3.5V
1
4V
4.5V
0.1
10V
T = 25°C
0.01
0.01
0.1
1
10
ID Drain Current (A)
On-Resistance v Drain Current
DMN6066SSS
Document Number DS33047 Rev. 3 - 2
ISD Reverse Drain Current (A)
ID Drain Current (A)
T = 150°C
1
0.1
Output Characteristics
1
1E-3
2.5V
VDS Drain-Source Voltage (V)
VDS = 10V
0.1
3V
0.1
Output Characteristics
10
4.5V
4V
3.5V
0.01
10
10V
10
VDS Drain-Source Voltage (V)
RDS(on) Drain-Source On-Resistance (Ω)
ADVANCE INFORMATION
Typical Characteristics
10
T = 150°C
1
T = 25°C
0.1
Vgs = 0V
0.01
0.2
0.4
0.6
0.8
1.0
VSD Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
5 of 9
www.diodes.com
April 2015
© Diodes Incorporated
DMN6066SSS
VGS = 0V
600
400
f = 1MHz
CISS
COSS
CRSS
200
0
0.1
1
10
VGS Gate-Source Voltage (V)
10
C Capacitance (pF)
ADVANCE INFORMATION
Typical Characteristics (continued)
8
6
4
0
VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
DMN6066SSS
Document Number DS33047 Rev. 3 - 2
VDS = 30V
2
ID = 4.5A
0
2
4
6
8
10
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
6 of 9
www.diodes.com
April 2015
© Diodes Incorporated
DMN6066SSS
Test Circuits
Current
regulator
ADVANCE INFORMATION
QG
50k
12V
VG
QGS
Sameas
D.U.T
QGD
VDS
IG
D.U.T
ID
VGS
Charge
Basic gate charge waveform
Gate charge test circuit
VDS
90%
RD
VGS
VDS
RG
VDD
10%
VGS
t d(on)
tr
t (on)
t d(off)
tr
t (on)
Switching time waveforms
DMN6066SSS
Document Number DS33047 Rev. 3 - 2
Switching time test circuit
7 of 9
www.diodes.com
April 2015
© Diodes Incorporated
DMN6066SSS
Package Outline Dimensions
0.254
ADVANCE INFORMATION
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
E1 E
A1
L
Gauge Plane
Seating Plane
Detail ‘A’
7°~9°
h
45°
Detail ‘A’
A2 A A3
b
e
D
SO-8
Dim
Min
Max
A
1.75
A1
0.10
0.20
A2
1.30
1.50
A3
0.15
0.25
b
0.3
0.5
D
4.85
4.95
E
5.90
6.10
E1
3.85
3.95
e
1.27 Typ
h
0.35
L
0.62
0.82
Θ
0°
8°
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
C1
C2
Dimensions
X
Y
C1
C2
Value (in mm)
0.60
1.55
5.4
1.27
Y
DMN6066SSS
Document Number DS33047 Rev. 3 - 2
8 of 9
www.diodes.com
April 2015
© Diodes Incorporated
DMN6066SSS
ADVANCE INFORMATION
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A.
B.
Life support devices or systems are devices or systems which:
1.
are intended to implant into the body, or
2.
support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
DMN6066SSS
Document Number DS33047 Rev. 3 - 2
9 of 9
www.diodes.com
April 2015
© Diodes Incorporated
Similar pages