ds32033

A Product Line of
Diodes Incorporated
DMN6068SE
ADVANCE INFORMATION
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
RDS(on)
ID
TA = +25C

100% Unclamped Inductive Switch (UIS) test in production

Low on-resistance
68mΩ @ VGS= 10V
5.6A

Fast switching speed
4.7A

Lead-Free Finish; RoHS compliant (Notes 1 & 2)
V(BR)DSS
60V
Features and Benefits
100mΩ @ VGS= 4.5V
Description
This MOSFET has been designed to minimize the on-state resistance
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data


Case: SOT223
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Applications

Moisture Sensitivity: Level 1 per J-STD-020

Motor Control

Terminals Connections: See diagram below

Transformer Driving Switch

DC-DC Converters

Power Management Functions

Uninterrupted Power Supply

Terminals: Finish - Matte Tin annealed over Copper lead frame.

Solderable per MIL-STD-202, Method 208 e3
Weight: 0.112 grams (approximate)
D
SOT223
G
S
Pin Out - Top View
Top View
Equivalent Circuit
Ordering Information (Note 4 & 5)
Part Number
DMN6068SE-13
DMN6068SEQ-13
Notes:
Qualification
Standard
Automotive
Case
SOT223
SOT223
Packaging
4000 / Tape & Reel
4000 / Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
5. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.
Marking Information
YWW
N6068
DMN6068SE
Document Number DS32033 Rev. 4 - 2
= Manufacturer’s Marking
N6068 = Product Type Marking Code
YWW = Date Code Marking
Y = Year (ex: 9 = 2009)
WW = Week (01 - 53)
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Maximum Ratings (@TA = +25°C, unless otherwise specified.)
ADVANCE INFORMATION
Characteristic
Drain-Source voltage
Symbol
Value
VDSS
60
Unit
V
Gate-Source voltage
(Note 6)
VGS
20
V
Single Pulsed Avalanche Energy
(Note 11)
EAS
37.5
mJ
Single Pulsed Avalanche Current
(Note 11)
IAS
5.0
A
(Note 8)
Continuous Drain current
VGS = 10V
5.6
TA = +70°C (Note 8)
ID
(Note 7)
Pulsed Drain current
A
4.1
IDM
20.8
A
Continuous Source current (Body diode)
(Note 8)
IS
4.9
A
Pulsed Source current (Body diode)
(Note 9)
ISM
20.8
A
Value
Unit
VGS= 10V
(Note 9)
4.5
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power dissipation
Linear derating factor
Symbol
(Note 7)
PD
(Note 8)
2.0
16.0
3.7
29.5
Thermal Resistance, Junction to Ambient
(Note 7)
(Note 8)
RθJA
62.5
34
Thermal Resistance, Junction to Lead
(Note 10)
RθJL
11.5
TJ, TSTG
-55 to +150
Operating and storage temperature range
Notes:
W
mW/°C
°C/W
°C
6. AEC-Q101 VGS maximum is 16V.
7. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
8. Same as note (3), except the device is measured at t  10 sec.
9. Same as note (3), except the device is pulsed with D= 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.
10. Thermal resistance from junction to solder-point (at the end of the drain lead).
11. UIS in production with L = 3.0mH, IAS = 5.0A, RG = 25Ω, VDD=50V, starting TJ = +25°C.
DMN6068SE
Document Number DS32033 Rev. 4 - 2
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Max Power Dissipation (W)
ID Drain Current (A)
RDS(on)
10 Limited
1
DC
1s
100ms
100m
10ms
1ms
Single Pulse
T amb=25°C
10m
100m
100µs
1
10
VDS Drain-Source Voltage (V)
2.0
1.6
1.2
0.8
0.4
0.0
0
20
Safe Operating Area
40
60
80
100 120 140 160
Temperature (°C)
Derating Curve
70
Tamb=25°C
60
Maximum Power (W)
Thermal Resistance (°C/W)
ADVANCE INFORMATION
Thermal Characteristics
50
40
D=0.5
30
20
Single Pulse
D=0.2
D=0.05
10
0
100µ
D=0.1
1m
10m 100m
1
Pulse Width (s)
10
100
1k
100
10
1
100µ
Document Number DS32033 Rev. 4 - 2
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Transient Thermal Impedance
DMN6068SE
Single Pulse
Tamb=25°C
Pulse Power Dissipation
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DMN6068SE
ADVANCE INFORMATION
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
BVDSS
60


V
Zero Gate Voltage Drain Current
IDSS


0.5
µA
VDS = 60V, VGS = 0V
Gate-Source Leakage
IGSS


100
nA
VGS = 20V, VDS = 0V
VGS(th)
1.0

3.0
V
ID = 250µA, VGS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
0.068
RDS (ON)


Forward Transconductance (Notes 12 & 13)
gfs

19.7
Diode Forward Voltage (Note 12)
VSD

0.98
Reverse recovery time (Note 13)
trr

Reverse recovery charge (Note 13)
Qrr

Input Capacitance
Ciss

502

pF
Output Capacitance
Coss

45.7

pF
Reverse Transfer Capacitance
Crss

27.1

pF
Total Gate Charge (Note 14)
Qg

5.55

nC
Static Drain-Source On-Resistance (Note 12)
0.100
Ω
ID = 250µA, VDS= VGS
VGS = 10V, ID = 12A
VGS = 4.5V, ID = 6A

S
VDS = 15V, ID = 12A
1.15
V
IS = 12A, VGS = 0V
145

ns
929

nC
IS = 12A, di/dt= 100A/µs
DYNAMIC CHARACTERISTICS (Note 13)
Total Gate Charge (Note 14)
Qg

10.3

nC
Gate-Source Charge (Note 14)
Qgs

1.6

nC
Gate-Drain Charge(Note 14)
Qgd

3.5

nC
tD(on)

3.6

ns
Turn-On Rise Time (Note 14)
tr

10.8

ns
Turn-Off Delay Time (Note 14)
tD(off)

11.9

ns
tf

8.7

ns
Turn-On Delay Time (Note 14)
Turn-Off Fall Time (Note 14)
Notes:
VDS = 30V, VGS = 0V
f= 1MHz
VGS = 4.5V
VGS = 10V
VDS = 30V
ID = 12A
VDD = 30V, VGS= 10V
ID = 12A, RG  6.0Ω
12. Measured under pulsed conditions. Pulse width  300µs; duty cycle  2%
13. For design aid only, not subject to production testing.
14. Switching characteristics are independent of operating junction temperatures.
DMN6068SE
Document Number DS32033 Rev. 4 - 2
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10V
T = 150°C
5V
10
4.5V
ID Drain Current (A)
ID Drain Current (A)
T = 25°C
4V
1
3.5V
VGS
0.1
3V
0.01
0.1
1
1
VGS
0.01
2
3
4
5
VGS Gate-Source Voltage (V)
Typical Transfer Characteristics
Normalised RDS(on) and VGS(th)
T = 25°C
0.1
1
10
2.0
VGS = 10V
1.8
ID = 12A
1.6
RDS(on)
1.4
1.2
1.0
0.8
0.6
0.4
-50
VGS(th)
VGS = VDS
ID = 250uA
0
50
100
150
Tj Junction Temperature (°C)
Normalised Curves v Temperature
100
3V
VGS
3.5V
10
4V
1
4.5V
5V
0.1
10V
T = 25°C
0.01
0.01
0.1
1
10
ID Drain Current (A)
On-Resistance v Drain Current
DMN6068SE
Document Number DS32033 Rev. 4 - 2
ISD Reverse Drain Current (A)
ID Drain Current (A)
T = 150°C
1
2V
Output Characteristics
1
1E-3
2.5V
VDS Drain-Source Voltage (V)
VDS = 10V
0.1
3V
0.1
Output Characteristics
10
4.5V
4V
3.5V
0.01
10
10V
10
VDS Drain-Source Voltage (V)
RDS(on) Drain-Source On-Resistance ()
ADVANCE INFORMATION
Typical Characteristics
10
1
T = 150°C
T = 25°C
0.1
Vgs = 0V
0.01
0.2
0.4
0.6
0.8
1.0
VSD Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
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VGS = 0V
600
VGS Gate-Source Voltage (V)
C Capacitance (pF)
10
f = 1MHz
CISS
400
COSS
CRSS
200
0
0.1
1
10
8
6
4
VDS = 30V
2
0
ID = 12A
0
VDS - Drain - Source Voltage (V)
20
2
4
6
8
10
Q - Charge (nC)
Capacitance v Drain-Source Voltage
Gate-Source Voltage v Gate Charge
40
Starting T J = 25°C
15
30
10
20
5
10
100µ
1m
EAS Avalanche Energy (mJ)
IAS Avalanche Current (A)
ADVANCE INFORMATION
Typical Characteristics (cont.)
L Inductor (H)
Single-Pulsed Avalanche Rating
DMN6068SE
Document Number DS32033 Rev. 4 - 2
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ADVANCE INFORMATION
Test Circuits
Current
regulator
QG
50k
12V
VG
QGS
Sameas
D.U.T
QGD
VDS
IG
D.U.T
ID
VGS
Charge
Basic gate charge waveform
Gate charge test circuit
VDS
90%
RD
VGS
VDS
RG
VDD
10%
VGS
t d(on)
tr
t (on)
t d(off)
tr
t (on)
Switching time waveforms
DMN6068SE
Document Number DS32033 Rev. 4 - 2
Switching time test circuit
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DMN6068SE
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
D
Q
b1
C
E
SOT223
Dim Min Max Typ
A
1.55 1.65 1.60
A1 0.010 0.15 0.05
b
0.60 0.80 0.70
b1
2.90 3.10 3.00
C
0.20 0.30 0.25
D
6.45 6.55 6.50
E
3.45 3.55 3.50
E1
6.90 7.10 7.00
e
4.60
e1
2.30
L
0.85 1.05 0.95
Q
0.84 0.94 0.89
All Dimensions in mm
E1
Gauge
Plane
0.25
Seating
Plane
e1
L
b
0°
-1
0°
e
A
A1
7°
7°
ADVANCE INFORMATION
Package Outline Dimensions
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X1
Dimensions
X1
X2
Y1
Y2
C1
C2
Y1
C1
Value (in mm)
3.3
1.2
1.6
1.6
6.4
2.3
Y2
X2
DMN6068SE
Document Number DS32033 Rev. 4 - 2
C2
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ADVANCE INFORMATION
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
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indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
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DMN6068SE
Document Number DS32033 Rev. 4 - 2
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