A Product Line of Diodes Incorporated DMN6068SE ADVANCE INFORMATION 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS(on) ID TA = +25C 100% Unclamped Inductive Switch (UIS) test in production Low on-resistance 68mΩ @ VGS= 10V 5.6A Fast switching speed 4.7A Lead-Free Finish; RoHS compliant (Notes 1 & 2) V(BR)DSS 60V Features and Benefits 100mΩ @ VGS= 4.5V Description This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Case: SOT223 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 Motor Control Terminals Connections: See diagram below Transformer Driving Switch DC-DC Converters Power Management Functions Uninterrupted Power Supply Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.112 grams (approximate) D SOT223 G S Pin Out - Top View Top View Equivalent Circuit Ordering Information (Note 4 & 5) Part Number DMN6068SE-13 DMN6068SEQ-13 Notes: Qualification Standard Automotive Case SOT223 SOT223 Packaging 4000 / Tape & Reel 4000 / Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 5. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/. Marking Information YWW N6068 DMN6068SE Document Number DS32033 Rev. 4 - 2 = Manufacturer’s Marking N6068 = Product Type Marking Code YWW = Date Code Marking Y = Year (ex: 9 = 2009) WW = Week (01 - 53) 1 of 9 www.diodes.com September 2013 © Diodes Incorporated A Product Line of Diodes Incorporated DMN6068SE Maximum Ratings (@TA = +25°C, unless otherwise specified.) ADVANCE INFORMATION Characteristic Drain-Source voltage Symbol Value VDSS 60 Unit V Gate-Source voltage (Note 6) VGS 20 V Single Pulsed Avalanche Energy (Note 11) EAS 37.5 mJ Single Pulsed Avalanche Current (Note 11) IAS 5.0 A (Note 8) Continuous Drain current VGS = 10V 5.6 TA = +70°C (Note 8) ID (Note 7) Pulsed Drain current A 4.1 IDM 20.8 A Continuous Source current (Body diode) (Note 8) IS 4.9 A Pulsed Source current (Body diode) (Note 9) ISM 20.8 A Value Unit VGS= 10V (Note 9) 4.5 Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Power dissipation Linear derating factor Symbol (Note 7) PD (Note 8) 2.0 16.0 3.7 29.5 Thermal Resistance, Junction to Ambient (Note 7) (Note 8) RθJA 62.5 34 Thermal Resistance, Junction to Lead (Note 10) RθJL 11.5 TJ, TSTG -55 to +150 Operating and storage temperature range Notes: W mW/°C °C/W °C 6. AEC-Q101 VGS maximum is 16V. 7. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 8. Same as note (3), except the device is measured at t 10 sec. 9. Same as note (3), except the device is pulsed with D= 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature. 10. Thermal resistance from junction to solder-point (at the end of the drain lead). 11. UIS in production with L = 3.0mH, IAS = 5.0A, RG = 25Ω, VDD=50V, starting TJ = +25°C. DMN6068SE Document Number DS32033 Rev. 4 - 2 2 of 9 www.diodes.com September 2013 © Diodes Incorporated A Product Line of Diodes Incorporated DMN6068SE Max Power Dissipation (W) ID Drain Current (A) RDS(on) 10 Limited 1 DC 1s 100ms 100m 10ms 1ms Single Pulse T amb=25°C 10m 100m 100µs 1 10 VDS Drain-Source Voltage (V) 2.0 1.6 1.2 0.8 0.4 0.0 0 20 Safe Operating Area 40 60 80 100 120 140 160 Temperature (°C) Derating Curve 70 Tamb=25°C 60 Maximum Power (W) Thermal Resistance (°C/W) ADVANCE INFORMATION Thermal Characteristics 50 40 D=0.5 30 20 Single Pulse D=0.2 D=0.05 10 0 100µ D=0.1 1m 10m 100m 1 Pulse Width (s) 10 100 1k 100 10 1 100µ Document Number DS32033 Rev. 4 - 2 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance DMN6068SE Single Pulse Tamb=25°C Pulse Power Dissipation 3 of 9 www.diodes.com September 2013 © Diodes Incorporated A Product Line of Diodes Incorporated DMN6068SE ADVANCE INFORMATION Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS 60 V Zero Gate Voltage Drain Current IDSS 0.5 µA VDS = 60V, VGS = 0V Gate-Source Leakage IGSS 100 nA VGS = 20V, VDS = 0V VGS(th) 1.0 3.0 V ID = 250µA, VGS = 0V ON CHARACTERISTICS Gate Threshold Voltage 0.068 RDS (ON) Forward Transconductance (Notes 12 & 13) gfs 19.7 Diode Forward Voltage (Note 12) VSD 0.98 Reverse recovery time (Note 13) trr Reverse recovery charge (Note 13) Qrr Input Capacitance Ciss 502 pF Output Capacitance Coss 45.7 pF Reverse Transfer Capacitance Crss 27.1 pF Total Gate Charge (Note 14) Qg 5.55 nC Static Drain-Source On-Resistance (Note 12) 0.100 Ω ID = 250µA, VDS= VGS VGS = 10V, ID = 12A VGS = 4.5V, ID = 6A S VDS = 15V, ID = 12A 1.15 V IS = 12A, VGS = 0V 145 ns 929 nC IS = 12A, di/dt= 100A/µs DYNAMIC CHARACTERISTICS (Note 13) Total Gate Charge (Note 14) Qg 10.3 nC Gate-Source Charge (Note 14) Qgs 1.6 nC Gate-Drain Charge(Note 14) Qgd 3.5 nC tD(on) 3.6 ns Turn-On Rise Time (Note 14) tr 10.8 ns Turn-Off Delay Time (Note 14) tD(off) 11.9 ns tf 8.7 ns Turn-On Delay Time (Note 14) Turn-Off Fall Time (Note 14) Notes: VDS = 30V, VGS = 0V f= 1MHz VGS = 4.5V VGS = 10V VDS = 30V ID = 12A VDD = 30V, VGS= 10V ID = 12A, RG 6.0Ω 12. Measured under pulsed conditions. Pulse width 300µs; duty cycle 2% 13. For design aid only, not subject to production testing. 14. Switching characteristics are independent of operating junction temperatures. DMN6068SE Document Number DS32033 Rev. 4 - 2 4 of 9 www.diodes.com September 2013 © Diodes Incorporated A Product Line of Diodes Incorporated DMN6068SE 10V T = 150°C 5V 10 4.5V ID Drain Current (A) ID Drain Current (A) T = 25°C 4V 1 3.5V VGS 0.1 3V 0.01 0.1 1 1 VGS 0.01 2 3 4 5 VGS Gate-Source Voltage (V) Typical Transfer Characteristics Normalised RDS(on) and VGS(th) T = 25°C 0.1 1 10 2.0 VGS = 10V 1.8 ID = 12A 1.6 RDS(on) 1.4 1.2 1.0 0.8 0.6 0.4 -50 VGS(th) VGS = VDS ID = 250uA 0 50 100 150 Tj Junction Temperature (°C) Normalised Curves v Temperature 100 3V VGS 3.5V 10 4V 1 4.5V 5V 0.1 10V T = 25°C 0.01 0.01 0.1 1 10 ID Drain Current (A) On-Resistance v Drain Current DMN6068SE Document Number DS32033 Rev. 4 - 2 ISD Reverse Drain Current (A) ID Drain Current (A) T = 150°C 1 2V Output Characteristics 1 1E-3 2.5V VDS Drain-Source Voltage (V) VDS = 10V 0.1 3V 0.1 Output Characteristics 10 4.5V 4V 3.5V 0.01 10 10V 10 VDS Drain-Source Voltage (V) RDS(on) Drain-Source On-Resistance () ADVANCE INFORMATION Typical Characteristics 10 1 T = 150°C T = 25°C 0.1 Vgs = 0V 0.01 0.2 0.4 0.6 0.8 1.0 VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage 5 of 9 www.diodes.com September 2013 © Diodes Incorporated A Product Line of Diodes Incorporated DMN6068SE VGS = 0V 600 VGS Gate-Source Voltage (V) C Capacitance (pF) 10 f = 1MHz CISS 400 COSS CRSS 200 0 0.1 1 10 8 6 4 VDS = 30V 2 0 ID = 12A 0 VDS - Drain - Source Voltage (V) 20 2 4 6 8 10 Q - Charge (nC) Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge 40 Starting T J = 25°C 15 30 10 20 5 10 100µ 1m EAS Avalanche Energy (mJ) IAS Avalanche Current (A) ADVANCE INFORMATION Typical Characteristics (cont.) L Inductor (H) Single-Pulsed Avalanche Rating DMN6068SE Document Number DS32033 Rev. 4 - 2 6 of 9 www.diodes.com September 2013 © Diodes Incorporated A Product Line of Diodes Incorporated DMN6068SE ADVANCE INFORMATION Test Circuits Current regulator QG 50k 12V VG QGS Sameas D.U.T QGD VDS IG D.U.T ID VGS Charge Basic gate charge waveform Gate charge test circuit VDS 90% RD VGS VDS RG VDD 10% VGS t d(on) tr t (on) t d(off) tr t (on) Switching time waveforms DMN6068SE Document Number DS32033 Rev. 4 - 2 Switching time test circuit 7 of 9 www.diodes.com September 2013 © Diodes Incorporated A Product Line of Diodes Incorporated DMN6068SE Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. D Q b1 C E SOT223 Dim Min Max Typ A 1.55 1.65 1.60 A1 0.010 0.15 0.05 b 0.60 0.80 0.70 b1 2.90 3.10 3.00 C 0.20 0.30 0.25 D 6.45 6.55 6.50 E 3.45 3.55 3.50 E1 6.90 7.10 7.00 e 4.60 e1 2.30 L 0.85 1.05 0.95 Q 0.84 0.94 0.89 All Dimensions in mm E1 Gauge Plane 0.25 Seating Plane e1 L b 0° -1 0° e A A1 7° 7° ADVANCE INFORMATION Package Outline Dimensions Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X1 Dimensions X1 X2 Y1 Y2 C1 C2 Y1 C1 Value (in mm) 3.3 1.2 1.6 1.6 6.4 2.3 Y2 X2 DMN6068SE Document Number DS32033 Rev. 4 - 2 C2 8 of 9 www.diodes.com September 2013 © Diodes Incorporated A Product Line of Diodes Incorporated DMN6068SE ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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