DMN6070SFCL

DMN6070SFCL
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
ADVANCE INFORMATION
60V
Features and Benefits
RDS(ON) max
ID max
TA = +25°C
•
Typical off board profile of 0.5mm - ideally suited for thin
85 mΩ @ VGS = 10V
3.0A
•
applications
Low RDS(ON) – minimizes conduction losses
120 mΩ @ VGS = 4V
2.5A
•
PCB footprint of 2.56mm
•
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
•
Halogen and Antimony Free. “Green” Device (Note 3)
•
Qualified to AEC-Q101 standards for High Reliability
Description
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
2
Mechanical Data
•
•
Case: X1-DFN1616-6 Type E
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Applications
•
Moisture Sensitivity: Level 1 per J-STD-020
•
Power Management Functions
•
•
Analog Switch
•
Lead Free Plating (NiPdAu Finish over Copper leadframe)
Terminals: Solderable per MIL-STD-202, Method 208 e4
•
Weight: 0.04 grams (approximate)
X1-DFN1616-6
Type E
D
Pin 1
G
S
Top View
Bottom View
Top View
Pin-Out
Device Symbol
Ordering Information (Note 4)
Product
DMN6070SFCL-7
Notes:
Reel size (inches)
7
Tape Width (mm)
8
Quantity per Reel
3,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
N60 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
N60
YM
Date Code Key
Year
Code
Month
Code
2011
Y
Jan
1
2012
Z
Feb
2
DMN6070SFCL
Document number: DS36502 Rev. 3 - 2
Mar
3
2013
A
Apr
4
May
5
2014
B
Jun
6
1 of 5
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2015
C
Jul
7
Aug
8
2016
D
Sep
9
Oct
O
2017
E
Nov
N
Dec
D
March 2014
© Diodes Incorporated
DMN6070SFCL
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Symbol
Value
Units
Drain-Source Voltage
Characteristic
VDSS
60
V
Gate-Source Voltage
VGSS
±20
V
ID
3.0
2.5
A
IDM
10
A
ADVANCE INFORMATION
Continuous Drain Current (Note 6) VGS = 10V
TA = +25°C
TA = +70°C
Steady
State
Pulsed Drain Current (10μs pulse, Duty cycle = 1%)
Thermal Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Symbol
(Note 5)
(Note 6)
(Note 5)
Value
0.6
1.8
200
PD
RθJA
(Note 6)
Operating and Storage Temperature Range
Units
W
W
°C/W
67
-55 to +150
TJ, TSTG
°C
Electrical Characteristics N-CHANNEL (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
BVDSS
60
—
—
V
VGS = 0V, ID = 250μA
Zero Gate Voltage Drain Current TJ = +25°C
IDSS
—
—
1.0
µA
VDS = 60V, VGS = 0V
Gate-Source Leakage
IGSS
—
—
±100
nA
VGS = ±16V, VDS = 0V
VGS(th)
1
V
VDS = VGS, ID = 250μA
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
RDS (ON)
—
—
3
67
85
74
120
mΩ
VGS = 10V, ID = 1.5A
VGS = 4V, ID = 0.5A
Forward Transfer Admittance
|Yfs|
—
2.6
—
S
VDS = 5V, ID = 1.5A
Diode Forward Voltage
VSD
—
0.7
1.2
V
VGS = 0V, IS = 3A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Ciss
—
606
—
pF
Output Capacitance
Coss
—
32.6
—
pF
Reverse Transfer Capacitance
Crss
—
24.6
—
pF
Gate Resistance
Rg
—
1.5
—
Ω
Total Gate Charge (VGS =10V)
Qg
—
12.3
—
nC
Total Gate Charge (VGS =4.5V)
Qg
—
5.6
—
nC
Gate-Source Charge
Qgs
—
1.7
—
nC
Gate-Drain Charge
Qgd
—
1.9
—
nC
Turn-On Delay Time
tD(on)
—
3.5
—
ns
Turn-On Rise Time
tr
—
4.1
—
ns
Turn-Off Delay Time
tD(off)
—
35
—
ns
tf
—
11
—
ns
Turn-Off Fall Time
Notes:
VDS = 20V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VDS = 30V, ID = 3A
VGS = 10V, VDS = 30V,
RG = 20Ω, RL = 50Ω
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMN6070SFCL
Document number: DS36502 Rev. 3 - 2
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March 2014
© Diodes Incorporated
DMN6070SFCL
15.0
12
VGS = 4V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
VDS = 5V
VGS = 5V
12.0
9.0
VGS = 3.5V
VGS = 3.0V
6.0
9
6
T A = 150°C
T A = 85°C
T A = 25°C
3
3.0
TA = 125°C
TA = -55°C
VGS = 2.5V
0.0
0
1
2
3
4
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0.12
VGS = 4V
0.09
VGS = 10V
0.06
0.03
0
0
3
6
9
12
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
15
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
2.4
2.0
VGS = 10V
ID = 3A
1.6
VGS = 4V
ID = 3A
1.2
0.8
0.4
-50
0
5
0.15
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
ADVANCE INFORMATION
15
VGS = 10V
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5 On-Resistance Variation with Temperature
DMN6070SFCL
Document number: DS36502 Rev. 3 - 2
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0
0.5
1 1.5 2 2.5 3 3.5 4 4.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
5
0.3
VGS = 4V
0.25
TA = 150°C
0.2
0.15
TA = 125°C
TA = 85°C
0.1
T A = 25°C
0.05
TA = -55°C
0
0
3
6
9
12
ID, DRAIN CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
15
0.2
0.18
0.16
0.14
VGS = 4V
ID = 1A
0.12
0.1
0.08
VGS = 10V
ID = 3A
0.06
0.04
0.02
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 6 On-Resistance Variation with Temperature
March 2014
© Diodes Incorporated
20
2
15
IS, SOURCE CURRENT (A)
VGS(th), GATE THRESHOLD VOLTAGE (V)
2.5
ID = 1mA
ID = 250µA
1.5
1
TA = 150°C
T A = 125°C
10
TA = 25°C
T A = 85°C
5
TA = -55°C
0.5
-50
0
10000
10
1000
Ciss
100
Coss
Crss
10
1
VGS GATE THRESHOLD VOLTAGE (V)
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
CT, JUNCTION CAPACITANCE (pF)
ADVANCE INFORMATION
DMN6070SFCL
f = 1MHz
0
10
20
30
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
40
0
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
9
8
7
6
VDS = 30V
ID = 3 A
5
4
3
2
1
0
0
2
4
6
8
10
12
Qg, TOTAL GATE CHARGE (nC)
Figure 10 Gate Charge
14
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A1
A3
X1-DFN1616-6
Type E
Dim
Min Max Typ
A
0.47 0.53 0.50
A1
0
0.05 0.02
A3
—
—
0.13
b
0.20 0.30 0.25
b1
0.10 0.30 0.20
D
1.55 1.65 1.60
D2
0.57 0.77 0.67
E
1.55 1.65 1.60
E2
1.30 1.50 1.40
e
—
—
0.50
L
0.25 0.35 0.30
L1
0.52 0.72 0.62
Z
—
—
0.175
All Dimensions in mm
A
D
D2
b1
E
E2
L1
L(2X)
e
Z(4X)
DMN6070SFCL
Document number: DS36502 Rev. 3 - 2
b(6X)
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DMN6070SFCL
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version.
X3
Y (2x)
ADVANCE INFORMATION
Dimensions
C
X
X1
X2
X3
Y
Y1
Y2
Y1
Y2
X2
X1
X (6x)
Value
(in mm)
0.500
0.300
0.200
0.720
0.400
0.475
0.620
1.900
C
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
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DMN6070SFCL
Document number: DS36502 Rev. 3 - 2
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March 2014
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