DMN2300UFB

A Product Line of
Diodes Incorporated
DMN2300UFB
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
V(BR)DSS
RDS(on)
ID max
TA = +25°C
20V
175mΩ @ VGS= 4.5V
240mΩ @ VGS= 2.5V
360mΩ @ VGS= 1.8V
1.30A
1.11A
0.91A









Footprint of just 0.6mm2 – thirteen times smaller than SOT23
0.5mm profile – ideal for low profile applications
On resistance <200mΩ @ VGS = 4.5V
Low Gate Threshold Voltage
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
ESD Protected Gate 2KV
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
Mechanical Data
This MOSFET is designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it


Case: X1-DFN1006-3
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper Leadframe; Solderable
per MIL-STD-202, Method 208 e4
ideal for high efficiency power management applications.



Load Switch

Weight: 0.001 grams (Approximate)
Drain
X1-DFN1006-3
Body
Diode
S
Gate
D
G
ESD PROTECTED TO 2kV
Bottom View
Top View
Internal Schematic
Gate
Protection
Diode
Source
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMN2300UFB-7
DMN2300UFB-7B
Notes:
Marking
NI
NI
Reel size (inches)
7
7
Tape width (mm)
8
8
Quantity per reel
3,000
10,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
DMN2300UFB
Document number: DS35235 Rev. 2 - 2
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A Product Line of
Diodes Incorporated
DMN2300UFB
Marking Information
From date code 1527 (YYWW),
this changes to:
NI
NI
Top View
Bar Denotes Gate and Source Side
Top View
Dot Denotes Drain Side
NI
NI
NI
NI
NI
NI
DMN2300UFB-7
NI
Top View
Bar Denotes Gate and Source Side
NI = Part Marking Code
DMN2300UFB
Document number: DS35235 Rev. 2 - 2
NI
NI
NI
DMN2300UFB-7B
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A Product Line of
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DMN2300UFB
Maximum Ratings (@TA = +25°C unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Symbol
VDSS
VGSS
Value
20
±8
Unit
V
V
ID
1.32
0.94
1.78
A
IDM
8
A
Value
0.468
1.2
267
104
-55 to +150
Unit
W
W
°C/W
°C/W
°C
TA = +25°C (Note 5)
TA = +85°C (Note 5)
TA = +25°C (Note 6)
Steady
State
Pulsed Drain Current (Note 7)
Thermal Characteristics (@TA = +25°C unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Electrical Characteristics
Symbol
PD
PD
RθJA
RθJA
TJ, TSTG
(@TA = +25°C unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
20
-
-
1
10
V
µA
µA
VGS(th)
RDS (ON)
|Yfs|
VSD
0.7
0.95
175
240
360
1.2
V
Static Drain-Source On-Resistance
0.45
40
-
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
-
67.62
9.74
7.58
68.51
0.89
0.14
0.16
4.92
6.93
21.71
10.62
-
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
mΩ
mS
V
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
Test Condition
VGS = 0V, ID = 10μA
VDS = 20V, VGS = 0V
VGS = ±8V, VDS = 0V
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 300mA
VGS = 2.5V, ID = 250mA
VGS = 1.8V, ID = 100mA
VDS = 3V, ID = 30mA
VGS = 0V, IS = 300mA
VDS = 20V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VGS = 4.5V, VDS = 10V,
ID = 1A
VDS = 10V, ID = 1A
VGS = 4.5V, RG = 6Ω
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 25mm X 25mm square copper plate.
7. Device mounted on minimum recommended pad layout test board, 10µs pulse duty cycle = 1%.
8. Short duration pulse test used to minimize self-heating effect.
DMN2300UFB
Document number: DS35235 Rev. 2 - 2
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DMN2300UFB
2.0
2.0
VGS = 4.5V
VDS = 5V
VGS = 2.5V
VGS = 1.8V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
VGS = 2.0V
1.5
VGS = 1.5V
1.0
0.5
1.5
1.0
TA = 150°C
0.5
TA = 125°C
VGS = 1.2V
TA = 85°C
TA = 25°C
TA = -55°C
0
1
2
3
4
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
0.4
0.3
0.2
VGS = 2.5V
VGS = 4.5V
0.1
0
0
0.4
0.8
1.2
1.6
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
VGS = 2.5V
ID = 500mA
1.2
1.0
0.8
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
DMN2300UFB
Document number: DS35235 Rev. 2 - 2
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0.5
1
1.5
2
2.5
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
3
0.8
VGS = 4.5V
0.6
0.4
TA = 125°C
TA = 150°C
0.2
TA = 85°C
TA = 25°C
TA = -55°C
0
0
RDSON, DRAIN-SOURCE ON-RESISTANCE ()
RDSON, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
VGS = 4.5V
ID = 1.0A
0.6
-50
0
2
1.6
1.4
0
5
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0
0.25
0.5 0.75 1
1.25 1.5 1.75
ID, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
2
0.8
0.6
0.4
VGS = 2.5V
ID = 500mA
0.2
VGS = 4.5V
ID = 1.0A
0
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
June 2015
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A Product Line of
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DMN2300UFB
2.0
VGS(TH), GATE THRESHOLD VOLTAGE (V)
1.2
1.0
IS, SOURCE CURRENT (A)
1.6
ID = 1mA
0.8
0.6
ID = 250µA
0.4
1.2
TA = 25°C
0.8
0.4
0.2
0
0
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
1,000
0
0.2
0.4
0.6
0.8
1.0
V SD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.2
100,000
IGSS, LEAKAGE CURRENT (nA)
IDSS, LEAKAGE CURRENT (nA)
T A = 125°C
100
T A = 85°C
10
TA = 25°C
TA = -55°C
1
2
4
6
8
10 12 14 16 18
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Leakage Current
vs. Drain-Source Voltage
10,000
20
TA = 150°C
TA = 125°C
1,000
TA = 85°C
TA = 25°C
100
TA = -55°C
10
1
2
4
6
8
10
12
VGS, GATE-SOURCE VOLTAGE (V)
Fig.10 Leakage Current vs. Gate-Source Voltage
VGS, GATE-SOURCE VOLTAGE (V)
8
VDS = 15V
ID = 1A
6
4
2
0
0
0.5
1
1.5
2
2.5
Qg, TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
DMN2300UFB
Document number: DS35235 Rev. 2 - 2
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r(t), TRANSIENT THERMAL RESISTANCE
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
RJA (t) = r(t) * R JA
RJA = 262°C/W
D = 0.02
0.01 D = 0.01
P(pk)
t2
TJ - TA = P * RJA(t)
Duty Cycle, D = t 1/t2
D = 0.005
D = Single Pulse
0.001
0.00001
0.0001
DMN2300UFB
Document number: DS35235 Rev. 2 - 2
t1
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (s)
Fig. 12 Transient Thermal Response
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10
100
1,000
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A Product Line of
Diodes Incorporated
DMN2300UFB
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
A
A1
Seating Plane
D
b
Pin #1 ID
e
E b2
X1-DFN1006-3
Dim Min Max Typ
A 0.47 0.53 0.50
A1 0.00 0.05 0.03
b
0.10 0.20 0.15
b2 0.45 0.55 0.50
D 0.95 1.075 1.00
E 0.55 0.675 0.60
e
0.35
L1 0.20 0.30 0.25
L2 0.20 0.30 0.25
L3
0.40
z
0.02 0.08 0.05
All Dimensions in mm
z
L3
L2
L1
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
C
Y
Dimensions
C
G1
G2
X
X1
Y
Y1
Y1
G2
X
Value (in mm)
0.70
0.30
0.20
0.40
1.10
0.25
0.70
G1
X1
DMN2300UFB
Document number: DS35235 Rev. 2 - 2
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IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
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indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for
use provided in the labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
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DMN2300UFB
Document number: DS35235 Rev. 2 - 2
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