DMN2300UFD

A Product Line of
Diodes Incorporated
DMN2300UFD
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
V(BR)DSS
RDS(on) Max
20V
200mΩ @ VGS = 4.5V
260mΩ @ VGS = 2.5V
400mΩ @ VGS = 1.8V
500mΩ @ VGS = 1.5V
•
•
•
•
•
•
ID max
TA = 25°C
(Notes 4)
1.73A
1.50A
1.27A
1.15A
Low Gate Threshold Voltage
Fast Switching Speed
“Lead Free”, RoHS Compliant (Note 1)
Halogen and Antimony Free. "Green" Device (Note 2)
ESD Protected Gate 2KV
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
•
•
•
•
•
Load switch
•
Case: X1-DFN1212-3
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish ۛ NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.005 grams (approximate)
Drain
X1-DFN1212-3
Body
Diode
Gate
Gate
Protection
Diode
Top View
Bottom View
Source
Equivalent Circuit
Pin-out Top view
Ordering Information (Note 3)
Part Number
DMN2300UFD-7
Notes:
Marking
KS2
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
3000
1. No purposefully added lead
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
KS2 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2011
Y
Jan
1
2012
Z
Feb
2
DMN2300UFD
Datasheet Number: DS35443 Rev. 2 - 2
Mar
3
2013
A
Apr
4
May
5
2014
B
Jun
6
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2015
C
Jul
7
Aug
8
2016
D
Sep
9
Oct
O
2017
E
Nov
N
Dec
D
September 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMN2300UFD
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Steady
State
Continuous Drain Current
TA = 25°C (Note 4)
TA = 85°C (Note 4)
TA = 25°C (Note 5)
Value
20
±8
1.73
1.34
1.21
6.0
ID
Pulsed Drain Current (Note 6)
IDM
Unit
V
V
A
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Symbol
(Note 4)
(Note 5)
(Note 4)
(Note 5)
PD
RθJA
Operating and Storage Temperature Range
Notes:
Value
0.96
0.47
130
265
-55 to +150
TJ, TSTG
Unit
W
W
°C/W
°C/W
°C
4. For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of 2oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
5. Same as note 4, except the device is mounted on minimum recommended pad layout.
6. Device mounted on minimum recommended pad layout test board, 10µs pulse duty cycle = 1%.
Thermal Characteristics
10
ID(A) @PW =1ms
Single Pulse
RθJA = 136°C/W
RθJA (t) = RθJA*r(t)
T J - T A = P*R θJA
9
8
RDS(ON)
Limited
I
D (A
)@
P
W=
ID, DRAIN CURRENT (A)
P(pk), PEAK TRANSIENT POWER (W)
10
7
6
5
4
3
10
0µ
1
@
A)
I D(
A)
I D(
0.1
=1
W
@P
0s
)@
(A
s
=1
PW
ID
@
A)
I D(
=1
PW
00
@
A)
I D(
0.01
2
s
DC
ms
=1
PW
0m
s
TJ(MAX) = 150°C
TA = 25°C
Single Pulse
1
0
0.0001 0.001
0.01 0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Fig. 1 Single Pulse Maximum Power Dissipation
DMN2300UFD
Datasheet Number: DS35443 Rev. 2 - 2
0.001
0.1
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ID(A) @
PW=10µs
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 2 SOA, Safe Operation Area
100
September 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMN2300UFD
r(t), TRANSIENT THERMAL RESISTANCE
1
D = 0.7
D = 0.5
D = 0.3
D = 0.9
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
RθJA(t) = r(t) * RθJA
RθJA = 136°C/W
Duty Cycle, D = t1/ t2
D = 0.005
D = Single Pulse
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIMES (sec)
Fig. 3 Transient Thermal Resistance
10
100
1,000
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
20
-
-
1
±10
V
μA
μA
VGS = 0V, ID = 250μA
VDS = 20V, VGS = 0V
VGS = ±8V, VDS = 0V
VGS(th)
0.45
-
V
Static Drain-Source On-Resistance
RDS (ON)
-
-
|Yfs|
VSD
40
-
0.7
0.95
200
260
400
500
1.2
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 900mA
VGS = 2.5V, ID = 800mA
VGS = 1.8V, ID = 700mA
VGS = 1.5V, ID = 200mA
VDS = 3V, ID = 300mA
VGS = 0V, IS = 300mA
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
-
67.62
9.74
7.58
68.51
0.89
0.14
0.16
4.92
6.93
21.71
10.62
2
-
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (Note 8)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
mΩ
mS
V
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
Test Condition
VDS = 25V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VGS = 4.5V, VDS = 15V,
ID = 1A
VDS = 10V, ID = 1A
VGS = 10V, RG = 6Ω
7. Short duration pulse test used to minimize self-heating effect.
8. Guarantee by design.
DMN2300UFD
Datasheet Number: DS35443 Rev. 2 - 2
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© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMN2300UFD
2.0
2.0
VGS = 4.5V
VDS = 5V
VGS = 2.5V
1.5
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
VGS = 2.0V
VGS = 1.8V
VGS = 1.5V
1.0
0.5
1.5
1.0
TA = 150°C
0.5
TA = 85°C
TA = 125°C
TA = 25°C
VGS = 1.2V
TA = -55°C
0
1
2
3
4
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 4 Typical Output Characteristic
VGS = 1.5V
0.8
0.6
0.4
VGS = 1.8V
VGS = 2.5V
0.2
VGS = 4.5V
0
0.4
0.8
1.2
1.6
ID, DRAIN-SOURCE CURRENT (A)
Fig. 6 Typical On-Resistance
vs. Drain Current and Gate Voltage
2
VGS = 1.8V
0.5
TA = 150°C
0.4
0.3
T A = 85°C
T A = 25°C
0.2
TA = -55°C
0.1
0
0
0.2
0.4
0.6
0.8
1
Datasheet Number: DS35443 Rev. 2 - 2
3
0.6
VGS = 4.5V
0.5
0.4
0.3
TA = 125°C
TA = 150°C
0.2
TA = 85°C
TA = 25°C
0.1
0
0
TA = -55°C
0.2
0.4
0.6
0.8
1
0.6
TA = 150°C
VGS = 1.5V
0.5
TA =
T A = 85
0.4
°C
125
°C
°C
T A = 25
0.3
TA = -55°C
0.2
0.1
0
0
0.2
0.4
0.6
0.8
1
ID, DRAIN CURRENT (A)
Fig. 9 Typical On-Resistance
vs. Drain Current and Temperature
ID, DRAIN CURRENT (A)
Fig. 8 Typical On-Resistance
vs. Drain Current and Temperature
DMN2300UFD
0.5
1
1.5
2
2.5
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 5 Typical Transfer Characteristic
ID, DRAIN CURRENT (A)
Fig. 7 Typical On-Resistance
vs. Drain Current and Temperature
0.6
TA = 125°C
0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
1
0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
5
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0
0
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© Diodes Incorporated
A Product Line of
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DMN2300UFD
RDSON, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
VGS = 2.5V
ID = 500mA
1.5
VGS = 4.5V
ID = 1.0A
1.3
VGS = 1.8V
ID = 100mA
1.1
VGS = 1.5V
ID = 50mA
0.9
0.7
0.5
-50
0.6
RDSON , DRAIN-SOURCE ON-RESISTANCE (Ω)
1.7
0.5
0.4
0.3
0.2
0
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 10 On-Resistance Variation with Temperature
VGS = 4.5V
ID = 1.0A
VGS = 2.5V
ID = 500mA
0.1
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 11 On-Resistance Variation with Temperature
2.0
1.2
1.0
IS, SOURCE CURRENT (A)
VGS(TH), GATE THRESHOLD VOLTAGE (V)
VGS = 1.8V
ID = 100mA
VGS = 1.5V
ID = 50mA
ID = 1mA
0.8
0.6
ID = 250µA
0.4
1.6
1.2
TA = 25°C
0.8
0.4
0.2
0
0
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 12 Gate Threshold Variation vs. Ambient Temperature
0
0.2
0.4
0.6
0.8
1.0
1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 13 Diode Forward Voltage vs. Current
100,000
1,000
IGSS, LEAKAGE CURRENT (nA)
IDSS, LEAKAGE CURRENT (nA)
T A = 125°C
100
T A = 85°C
10
TA = 25°C
TA = -55°C
1
2
4
6
8 10 12 14 16 18
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 14 Typical Leakage Current
vs. Drain-Source Voltage
DMN2300UFD
Datasheet Number: DS35443 Rev. 2 - 2
20
5 of 7
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10,000
TA = 150°C
T A = 125°C
1,000
T A = 85°C
TA = 25°C
100
TA = -55°C
10
1
2
4
6
8
10
12
VGS, GATE-SOURCE VOLTAGE (V)
Fig.15 Leakage Current vs. Gate-Source Voltage
September 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMN2300UFD
VGS, GATE-SOURCE VOLTAGE (V)
8
VDS = 15V
ID = 1A
6
4
2
0
0
0.5
1
1.5
2
2.5
Qg, TOTAL GATE CHARGE (nC)
Fig. 16 Gate-Charge Characteristics
3
Package Outline Dimensions
A
X1-DFN1212-3
Dim Min Max Typ
A 0.47 0.53 0.50
A1
0 0.05 0.02
A3
0.13
b 0.27 0.37 0.32
b1 0.17 0.27 0.22
D 1.15 1.25 1.20
E 1.15 1.25 1.20
e
0.80
L 0.25 0.35 0.30
All Dimensions in mm
A3
A1
D
e
b1
(2x)
E
L
b
Suggested Pad Layout
X
Y
X1
(2x)
Y2
Y1
(2x)
Dimensions
C
X
X1
Y
Y1
Y2
Value (in mm)
0.80
0.42
0.32
0.50
0.50
1.50
C
DMN2300UFD
Datasheet Number: DS35443 Rev. 2 - 2
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© Diodes Incorporated
A Product Line of
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DMN2300UFD
MPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
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Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
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LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2011, Diodes Incorporated
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DMN2300UFD
Datasheet Number: DS35443 Rev. 2 - 2
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September 2011
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