DMN2990UFZ

DMN2990UFZ
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
RDS(ON) max
ID max
TA = +25°C
•
Low Package Profile, 0.42mm Maximum Package Height
•
0.62mm x 0.62mm Package Footprint
0.99Ω @ VGS = 4.5V
250mA
•
Low On-Resistance
1.2Ω @ VGS = 2.5V
230mA
•
Very Low Gate Threshold Voltage, 1.0V Max
1.8Ω @ VGS = 1.8V
180mA
•
ESD Protected Gate
•
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
•
Halogen and Antimony Free. “Green” Device (Note 3)
•
Qualified to AEC-Q101 standards for High Reliability
NEW PRODUCT
ADVANCED INFORMATION
NEW PRODUCT
V(BR)DSS
20V
Features and Benefits
150mA
2.4Ω @ VGS = 1.5V
Description
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
•
•
Case: X2-DFN0606-3
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Applications
•
Moisture Sensitivity: Level 1 per J-STD-020
•
General Purpose Interfacing Switch
•
•
Power Management Functions
Terminals: Finish – NiPdAu over Copper Leadframe
Solderable per MIL-STD-202, Method 208 e4
•
Analog Switch
•
Weight: 0.001 grams (Approximate)
X2-DFN0606-3
ESD PROTECTED
Bottom View
Equivalent Circuit
Top View
Package Pin Configuration
Ordering Information (Note 4)
Part Number
DMN2990UFZ-7B
Notes:
Case
X2-DFN0606-3
Packaging
10K/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
X2-DFN0606-3
6N = Product Type Marking Code
Top View
Bar Denotes Gate
and Source Side
DMN2990UFZ
Document number: DS36693 Rev. 4 - 2
1 of 7
www.diodes.com
January 2015
© Diodes Incorporated
DMN2990UFZ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
NEW PRODUCT
ADVANCED INFORMATION
NEW PRODUCT
Symbol
Value
Units
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
±8
V
ID
250
170
mA
IDM
800
mA
Continuous Drain Current (Note 5) VGS = 4.5V
TA = +25°C
TA = +85°C
Steady
State
Pulsed Drain Current (Note 6)
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Symbol
Value
Total Power Dissipation (Note 5)
Characteristic
Steady state
PD
320
mW
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
RθJA
402
°C/W
TJ, TSTG
-55 to +150
°C
Operating and Storage Temperature Range
Units
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
@TC = +25°C
Symbol
Min
Typ
Max
Unit
Test Condition
BVDSS
20
—
—
V
VGS = 0V, ID = 250μA
IDSS
—
—
100
nA
VDS = 16V, VGS = 0V
IGSS
—
—
±100
nA
VGS = ±5V, VDS = 0V
VGS(th)
0.4
—
1.0
V
VDS = VGS, ID = 250μA
—
0.60
0.99
VGS = 4.5V, ID = 100mA
—
0.75
1.2
VGS = 2.5V, ID = 50mA
—
0.90
1.8
—
1.2
2.4
—
2.0
—
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
RDS(ON)
Ω
VGS = 1.8V, ID = 20mA
VGS = 1.5V, ID = 10mA
VGS = 1.2V, ID = 1mA
Forward Transfer Admittance
|Yfs|
180
—
—
mS
VDS = 10V, ID = 400mA
Diode Forward Voltage
VSD
—
0.6
1.0
V
VGS = 0V, IS = 150mA
Input Capacitance
Ciss
—
28.2
55.2
pF
Output Capacitance
Coss
—
4.0
8.0
pF
Reverse Transfer Capacitance
DYNAMIC CHARACTERISTICS (Note 8)
Crss
—
2.8
5.6
pF
Total Gate Charge
Qg
—
0.5
1.0
nC
Gate-Source Charge
Qgs
—
0.07
0.14
nC
Gate-Drain Charge
Qgd
—
0.07
0.14
nC
Turn-On Delay Time
tD(on)
—
3.5
10
ns
Turn-On Rise Time
tr
—
2.1
10
ns
Turn-Off Delay Time
tD(off)
—
22
35
ns
tf
—
7.7
15
ns
Turn-Off Fall Time
Notes:
VDS = 16V, VGS = 0V,
f = 1.0MHz
VGS = 4.5V, VDS = 10V,
ID = 250mA
VDD = 10V, VGS = 4.5V,
RL = 47Ω, RG = 10Ω,
ID = 200mA
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMN2990UFZ
Document number: DS36693 Rev. 4 - 2
2 of 7
www.diodes.com
January 2015
© Diodes Incorporated
DMN2990UFZ
0.8
0.8
VGS = 4.5V
VGS = 2.0V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
0.7
VGS = 2.5V
0.6
VGS = 1.5V
0.5
0.4
0.3
0.2
VGS = 1.2V
0.1
0.6
0.5
0.4
TA = 150°C
0.3
TA = 125°C
0.2
TA = 85°C
T A = 25°C
0.1
T A = -55°C
VGS = 1.0V
0.0
0
0.5
1
1.5
2
2.5
3
3.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
1.2
VGS = 1.8V
0.9
VGS = 2.5V
0.6
VGS = 4.5V
0.3
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
DMN2990UFZ
Document number: DS36693 Rev. 4 - 2
0
4
1.5
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
NEW PRODUCT
ADVANCED INFORMATION
NEW PRODUCT
0.7
VDS = 5.0V
1
3 of 7
www.diodes.com
0.5
1
1.5
2
2.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
3
5
4
ID = 100mA
3
ID = 50mA
2
1
ID = 20mA
0
0
1
2
3
4
5
6
7
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristics
8
January 2015
© Diodes Incorporated
DMN2990UFZ
0.80
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
2.5
VGS = 4.5V
TA = 150°C
TA = 125°C
T A = 85°C
0.60
TA = 25°C
0.40
TA = -55°C
0.20
2
0
0.1
0.2 0.3 0.4 0.5 0.6 0.7
ID, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
VGS = 4.5V
ID = 300mA
1.5
1
VGS = 2.5V
ID = 150mA
0.5
0.00
0
-50
0.8
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (° C)
Figure 6 On-Resistance Variation with Temperature
1.5
1
VGS(th), GATE THRESHOLD VOLTAGE (V)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
NEW PRODUCT
ADVANCED INFORMATION
NEW PRODUCT
1.00
1.2
VGS = 4.5V
ID = 300mA
0.9
0.6
VGS = 2.5V
ID = 150mA
0.3
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 7 On-Resistance Variation with Temperature
DMN2990UFZ
Document number: DS36693 Rev. 4 - 2
4 of 7
www.diodes.com
0.9
0.8
ID = 1mA
0.7
ID = 250µA
0.6
0.5
0.4
TJ, JUNCTION TEMPERATURE (°C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
January 2015
© Diodes Incorporated
DMN2990UFZ
1
100
CT, JUNCTION CAPACITANCE (pF)
0.9
IS, SOURCE CURRENT (A)
0.7
TA = 150°C
0.6
TA = 125°C
0.5
TA = 25°C
0.3
Ciss
10
TA = 85°C
0.4
T A = -55°C
0.2
Coss
Crss
0.1
f = 1MHz
0
0
8
VGS GATE THRESHOLD VOLTAGE (V)
NEW PRODUCT
ADVANCED INFORMATION
NEW PRODUCT
0.8
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
1
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
VDS = 10V
ID = 250mA
6
4
2
0
0
0.2
0.4
0.6
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
DMN2990UFZ
Document number: DS36693 Rev. 4 - 2
0.8
5 of 7
www.diodes.com
January 2015
© Diodes Incorporated
DMN2990UFZ
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
NEW PRODUCT
ADVANCED INFORMATION
NEW PRODUCT
1
A
A
Seating Plane
D
X2-DFN0606-3
Dim
Min
Max
Typ
A
0.36
0.40
0.39
A1
0
0.05
0.02
b
0.10
0.20
0.15
D
0.57
0.67
0.62
D2
0.155 BSC
D3
0.185 BSC
E
0.57
0.67
0.62
E2
0.40
0.60
0.50
e
0.35 BSC
k
0.16 REF
L
0.09
0.21
0.15
L2
0.11
0.31
0.21
All Dimensions in mm
2
D
3
D
2
/
e
E
2
E
e
k
x
2
b
2
L
︵ ︶
x
2
L
︵ ︶
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X2-DFN0606-3
X
Y
1
Y
C
Dimensions
C
X
X1
X2
Y
Y1
Value (in mm)
0.350
0.280
0.350
0.760
0.200
0.600
1
X
2
X
DMN2990UFZ
Document number: DS36693 Rev. 4 - 2
6 of 7
www.diodes.com
January 2015
© Diodes Incorporated
DMN2990UFZ
IMPORTANT NOTICE
NEW PRODUCT
ADVANCED INFORMATION
NEW PRODUCT
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
www.diodes.com
DMN2990UFZ
Document number: DS36693 Rev. 4 - 2
7 of 7
www.diodes.com
January 2015
© Diodes Incorporated
Similar pages