bc856w.pdf

BC856W ... BC859W
BC856W ... BC859W
Surface Mount General Purpose Si-Epi-Planar Transistors
Si-Epi-Planar Universaltransistoren für die Oberflächenmontage
PNP
PNP
Version 2011-07-11
2
±0.1
0.3
1
±0.1
Type
Code
1
1.25±0.1
2.1±0.1
3
2
1.3
Dimensions - Maße [mm]
1=B
2=E
3=C
Power dissipation – Verlustleistung
200 mW
Plastic case
Kunststoffgehäuse
SOT-323
Weight approx. – Gewicht ca.
0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25°C)
Grenzwerte (TA = 25°C)
BC856W
BC857W
BC858W
BC859W
Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open
- VCEO
65 V
45 V
30 V
Collector-Base-voltage – Kollektor-Basis-Spannung
E open
- VCBO
80 V
50 V
30 V
Emitter-Base-voltage – Emitter-Basis-Spannung
C open
- VEBO
5V
Power dissipation – Verlustleistung
Ptot
200 mW 1)
Collector current – Kollektorstrom (dc)
- IC
100 mA
Peak Collector current – Kollektor-Spitzenstrom
- ICM
200 mA
Peak Base current – Basis-Spitzenstrom
- IBM
200 mA
Peak Emitter current – Emitter-Spitzenstrom
IEM
200 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
DC current gain – Kollektor-Basis-Stromverhältnis
- VCE = 5 V, - IC = 10 µA
Group A
Group B
Group C
HFE
hFE
hFE
–
–
–
140
250
480
–
–
–
- VCE = 5 V, - IC = 2 mA
Group A
Group B
Group C
HFE
hFE
hFE
125
220
420
180
290
520
250
475
800
–
–
75 mV
250 mV
300 mV
650 mV
Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung 2)
- IC = 10 mA, - IB = 0.5 mA
- IC = 100 mA, - IB = 5 mA
1
2
- VCEsat
- VCEsat
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1
BC856W ... BC859W
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
- VBEsat
- VBEsat
–
–
700 mV
850 mV
–
–
- VBE
- VBE
600 mV
–
650 mV
–
750 mV
820 mV
- ICBO
- ICBO
–
–
–
–
15 nA
5 µA
- IEBO
–
–
100 nA
fT
100 MHz
–
–
CCBO
–
–
4.5 pF
CEBO
–
10 pF
15 pF
F
F
–
–
–
1 dB
10 dB
4 dB
Base-Emitter saturation voltage – Basis-Sättigungsspannung 2)
- IC = 10 mA, - IB = 0.5 mA
- IC = 100 mA, - IB = 5 mA
Base-Emitter-voltage – Basis-Emitter-Spannung 2)
- VCE = 5 V, - IC = 2 mA
- VCE = 5 V, - IC = 10 mA
Collector-Base cutoff current – Kollektor-Basis-Reststrom
- VCB = 30 V, (E open)
- VCE = 30 V, Tj = 125°C, (E open)
Emitter-Base cutoff current
- VEB = 5 V, (C open)
Gain-Bandwidth Product – Transitfrequenz
- VCE = 5 V, - IC = 10 mA, f = 100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE =ie = 0, f = 1 MHz
Emitter-Base Capacitance – Emitter-Basis-Kapazität
- VEB = 0.5 V, IC = ic = 0, f = 1 MHz
Noise figure – Rauschzahl
- VCE = 5 V, - IC = 200 µA, RG = 2 kΩ
f = 1 kHz, Δf = 200 Hz
BC856W ... BC858W
BC859W
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
Marking of available current gain
groups per type
Stempelung der lieferbare Stromverstärkungsgruppen pro Typ
2
1
2
< 620 K/W 1)
BC846W ... BC849W
BC856AW = 3A
BC857AW = 3E
BC858AW = 3J
BC856BW = 3B
BC857BW = 3F
BC858BW = 3K
BC859BW = 4B
BC857CW = 3G
BC858CW = 3L
BC859CW = 4C
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
http://www.diotec.com/
© Diotec Semiconductor AG
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