AUIPS6121R Data Sheet (743 KB, EN)

Automotive grade
AUIPS6121R
CURRENT SENSE HIGH SIDE SWITCH
Features









Product Summary
Suitable for 12V systems
Over current shutdown
Over temperature shutdown
Current sensing
Active clamp
Low current
Reverse battery
ESD protection
Optimized Turn On/Off for EMI
Rds(on)
5.8m max.
Vclamp
39V typ.
Current shutdown 65A min.
Package
Applications


Glow plug
PTC
Description
The AUIPS6121R is a fully protected four terminal high
side switch. It features current sensing, over-current, overtemperature, ESD protection and drain to source active
clamp. Shutdown type of protection provides a good
reliability under short circuit condition. The Ifb pin provides
both an analog feedback during normal operation and a
digital flag when the part is in protection mode.
DPak – 5Leads
Ordering Information
Standard Pack
Base Part Number
Package Type
Complete Part Number
Form
AUIPS6121R
D-Pak-5-Leads
Tube
Tape and reel left
1
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Quantity
75
AUIPS6121R
3000
AUIPS6121RTRL
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Typical Connection
Vcc
In
AUIPS6121R
Battery
Ifb
Current feedback
Out
10k
Input
*
On
Load
Rifb
Logic
Ground
Off
Power
Ground
* The diode on the bipolaire NPN is necessary for reverse battery protection.
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Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. (Tambient=25°C unless
otherwise specified).
Symbol
Parameter
Min.
Vout
Vcc-Vin max.
Iifb, max.
Vcc sc
Maximum output voltage
Maximum Vcc voltage
Maximum feedback current
Maximum Vcc voltage with short circuit protection see page 7
Maximum power dissipation (internally limited by thermal protection)
Rth=50°C/W Dpack 6cm² footprint
Max. operating junction temperature
Max. storage junction temperature
Vcc-39 Vcc+0.3
-18
39
-50
10

22
Pd
Tj max.

Max.
Units
V
mA
V
W
-40
-55
2.5
150
150
Typ.
Max.
Units
70
50
1.2



°C/W
Min.
Max.
Units

12
A

50
Hz
°C
Thermal Characteristics
Symbol
Parameter
Rth1
Rth2
Rth3
Thermal resistance junction to ambient Dpak Std footprint
Thermal resistance junction to ambient Dpak 6cm² footprint
Thermal resistance junction to case Dpak
Recommended Operating Conditions
These values are given for a quick design.
Symbol
Parameter
Iout
Continuous output current, Tambient=85°C, Tj=150°C
Rth=50°C/W, Dpak 6cm² footprint
Maximum frequency
F
3
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Static Electrical Characteristics
Tj=-40°C..150°C, Vcc=6..18V (unless otherwise specified)
Symbol
Parameter
Min.
Typ.
Max.

Operating voltage range
5.8
35

ON state resistance Tj=25°C
4.8
5.8

ON state resistance Tj=150°C (2)
7.5
9

Icc off
Supply leakage current
1
3

Iout off
Output leakage current
1
3
Iin on
Input current when device on
1
2.7
6
V clamp
Vcc to Vout clamp voltage
37
39
44
Vih(1)
High level Input threshold voltage
4.5
5.4
6.2
Vil(1)
Low level Input threshold voltage
4
5
5.8

Rds(on) rev Reverse On state resistance Tj=25°C
6
8

Forward body diode voltage Tj=25°C
0.8
0.9
Vf

Forward body diode voltage Tj=125°C
0.6
0.8
Rin
Input resistor
115
200
300
(1) Input thresholds are measured directly between the input pin and the tab.
(2) Guaranteed by design
Vcc op.
Rds(on)
Units
Test Conditions
V
m
µA
mA
V
Ids=10A
Vin=Vcc=14V,Vifb=Vgnd
Vout=Vgnd, Tj=25°C
Vcc-Vin=14V
Id=20mA
m
Isd=10A, Vin-Vcc>8V
V
If=10A

Built-in resistor
Switching Electrical Characteristics
Vcc=14V, Resistive load=1, Tj=25°C
Symbol
Parameter
Tdon
Tr
Tdoff
Tf
Turn on delay time
Rise time from 20% to 80% of Vcc
Turn off delay time
Fall time from 80% to 20% of Vcc
Min.
Typ.
Max.
Units
20
15
20
15
50
35
100
35
150
100
250
100
µs
Min.
Typ.
Max.
Units
150
65
165
90

120
°C
A
15
20
27
mA
18
12
0.3
20
26
0.7
22
60
2
V
Test Conditions
See fig. 1
Protection Characteristics
Tj=-40°C..150°C, Vcc=6..18V (unless otherwise specified)
Symbol
Parameter
Tsd
Isd
Over temperature threshold(2)
Over-current shutdown
Ifb after an over-current or an overI fault
temperature (latched)
OV
Over-voltage protection
Psd rst
Time to reset Psd
Psd_UV
Time to shutdown when Vcc-Out=UV (3)
(3) See explanation page 8
Test Conditions
See fig. 3
Vcc-Vin
ms
Current Sensing Characteristics
Tj=-40°C..150°C, Vcc=6..18V (unless otherwise specified), Vcc-Vifb>3.5V
Symbol
Parameter
Min.
Typ.
Max.
Ratio
I load / Ifb current ratio
5000
6300
7600
Ratio_Cold
Ratio_Hot
I offset
Ifb leakage
Ratio drift between 25°C to -40°C
Ratio drift between 25°C to 125°C
Load current offset
Ifb leakage current
-2.2
3
0
0.5
2.1
7.7
0.15
25
4
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-6.6
-1.6
-0.15
0
Units
%
A
µA
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Test Conditions
Iload=60A at Vcc=14V,
Iload=30A at Vcc=6V,
after 1.5ms,See page 7
Ratio@-40°[email protected]°
[email protected]°[email protected]°
After 1.5ms
Iout=0A, Vcc-Vin=14V
June 23, 2015
Lead Assignments
3- Vcc
1- In
2- Ifb
3- Vcc
4- Out
5- Out
12
45
DPak
Functional Block Diagram
All values are typical
VCC
Charge
Pump
Vih=5.4V
75V
2.7mA
36V
75V
Vcc-Vin<OV
+
-
Driver
Reset
Set
Latch
40V
Q
200 Ω
Iout> 90A
Reverse
Battery
Protection
Diag
+
Tj> 165°C
Over power
shut down
IN
5
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IFB OUT
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Truth Table
Op. Conditions
Normal mode
Normal mode
Open load
Open load
Short circuit to GND
Short circuit to GND
Over temperature
Over temperature
Input
H
L
H
L
H
L
H
L
Output
L
H
L
H
L
L
L
L
Ifb pin voltage
0V
I load x Rfb / Ratio
0V
Ifb leakage x Rifb
0V
I fault x Rifb(latched)
0V
I fault x Rifb (latched)
Operating voltage
Maximum Vcc voltage : this is the maximum voltage before the breakdown of the IC process.
Operating voltage : This is the Vcc range in which the functionality of the part is guaranteed. The AEC-Q100 qualification
is run at the maximum operating voltage specified in the datasheet.
Reverse battery
During the reverse battery the Mosfet is turned on if the input pin is powered with a diode in parallel of the input transistor.
Power dissipation in the IPS : P = Rdson rev * I load² + Vcc² / 200ohm ( internal input resistor ).
If the power dissipation is too high in Rifb, a diode in serial can be added to block the current.
Active clamp
The purpose of the active clamp is to limit the voltage across the MOSFET to a value below the body diode break down
voltage to reduce the amount of stress on the device during switching.
The temperature increase during active clamp can be estimated as follows:
 Tj  PCL  Z TH(t CLAMP )
Where: Z TH( t CLAMP ) is the thermal impedance at tCLAMP and can be read from the thermal impedance curves given in the
data sheets.
PCL  VCL  ICLavg : Power dissipation during active clamp
VCL  39V : Typical VCLAMP value
I
ICLavg  CL : Average current during active clamp
2
t CL 
di

dt
ICL : Active clamp duration
di
dt
VBattery  VCL : Demagnetization current
L
Figure 9 gives the maximum inductance versus the load current in the worst case: the part switches off after an over
temperature detection. If the load inductance exceeds the curve, a freewheeling diode is required.
Over-current protection
The threshold of the over-current protection is set in order to guarantee that the device is able to turn on a load with an
inrush current lower than the minimum of Isd. Nevertheless for high current and high temperature the device may switch
off for a lower current due to the over-temperature protection.
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Current sensing accuracy
Ifb
Ifb2
Ifb1
Ifb leakage
I offset
Iout1
Iout2
Iout
The current sensing is specified by measuring 3 points :
- Ifb1 for Iout1
- Ifb2 for Iout2
- Ifb leakage for Iout=0
The parameters in the datasheet are computed with the following formula :
Ratio = ( Iout2 – Iout1 )/( Ifb2 – Ifb1)
I offset = Ifb1 x Ratio – Iout1
This allows the designer to evaluate the Ifb for any Iout value using :
Ifb = ( Iout + I offset ) / Ratio if Ifb>Ifb leakage
For some applications, a calibration is required. In that case, the accuracy of the system will depends on the variation of
the I offset and the ratio over the temperature range. The ratio variation is given by Ratio_Hot and Ratio_Cold specified in
page 4.
The Ioffset variation depends directly on the Rdson:
I offset@-40°C= I [email protected]°C / 0.8
I [email protected]°C= I [email protected]°C / 1.9
Maximum Vcc voltage with short circuit protection
The maximum Vcc voltage with short circuit is the maximum voltage for which the part is able to protect itself under test
conditions representative of the application. 2 kind of short circuits are considered: terminal and load short circuit.
L supply
5µH
R supply
10mohm
Vcc
IPS Out
TerminalSC
LoadSC
L SC
0.1 µH
L supply + L SC = 5 µH
R SC
10 mohm
100 mohm
L SC
R SC
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Over power shut down protection
Vcc - Source (V)
The AUIPS6121R integrates an over-power protection in order to limit the thermal stress in the mosfet during certain
conditions like overload or under voltage. The power is measured by monitoring the voltage between Vcc and Source.
The device latches more quickly when the power is higher.
40
35
30
25
20
15
10
5
0
VCC
Vref
C
R
Vrc
Psd_UV
+
-
Current proportional
of Vds value
0
1
2
3
When Vrc>Vref:
The device latches
OUT
4
Over power shut down time (ms)
When the device is latched: VRC is discharge with an internal constant (Psd rst).
Typical in low voltage condition with a short circuit on the output, the voltage on the Vcc pin will oscillate around the under
voltage protection and the 'over-current shut down' will not be triggered.
The 'Over power shut down' protection will turn off the part after the time ‘Psd_UV' for preventing thermal stress of the
device.
R
L
Vin-Gnd
Vcc - Out
Vin
Vcc
IN
AUIPS6121R
Ifb
Current feedback
Out
Isdf
Battery
10k
Iout
Input
Rifb
On
Logic
Ground
Off
Power
Ground
Psd_UV
Ifault
Ifb
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T clamp
Vcc-Vin
80%
Vcc-Vin
20%
Ids
80%
Vcc
Vout
20%
Td on
Vds
Td off
Tr
Vds clamp
Tf
See Application Notes to evaluate power dissipation
Figure 2 – Active clamp waveforms
Figure 1 – IN rise time & switching definitions
30
I shutdown
Ids
Tj
Tshutdown
Tsd
165°C
V fault
Vifb
Icc off, supply leakage current (µA)
Vin
25
20
15
10
5
0
-50
0
50
100
150
Tj, junction temperature (°C)
Figure 3 – Protection timing diagram
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Figure 4 – Icc off (µA) VsTj (°C)
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6
5
5
4
4
Vih and Vil (V)
Iccoff, supply current (µA)
6
3
2
1
VIH
3
VIL
2
1
0
0
0
10
20
30
-50
Vcc-Vin, supply voltage (V)
25
50
75
100
125
150
Figure 6 – Vih and Vil (V) VsTj (°C)
100
150 %
100 %
50%
-50
0
50
100
150
Tj, junction temperature (°C)
Figure 7 - Normalized Rds(on) (%) Vs Tj (°C)
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Zth, transient thermal impedance (°C/W)
200 %
Rds(on), Drain-to-Source On Resistance
(Normalized)
0
Tj, junction temperature (°C)
Figure 5 – Icc off (µA) VsVcc-Vin (V)
10
-25
10
1
0.1
0.01
1e-5 1e-4 1e-3 1e-2 1e-1 1e+0 1e+1 1e+2 1e+3
Time (s)
Figure 8 – Transient thermal impedance (°C/W)
Vs time (s)
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100
100
Tsd, time to shutdown(s)
Max. output current (A)
10
10
1
0.1
0.01
'-40°C
'+25°C
0.001
'+125°C
1
1.E-03
0.0001
1.E-02
1.E-01
1.E+00
1.E+01
Inductance (mH)
Figure 9 – Max. Iout (A) Vs inductance (mH)
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0
10
20
30
40
50
60
70
80
90
Iout, output current (A)
Figure 10 – Tsd (s) Vs I out (A)
SMD with 6cm²
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Case Outline 5 Lead – DPAK
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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Tape & Reel
5 Lead – DPAK
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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Part Marking Information
Qualification Information†
Automotive
(per AEC-Q100)
Comments: This family of ICs has passed an Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by extension
of the higher Automotive level.
Qualification Level
Moisture Sensitivity Level
DPAK-5L
Machine Model
ESD
Human Body Model
Charged Device Model
IC Latch-Up Test
RoHS Compliant
†
MSL2,260°C
(per IPC/JEDEC J-STD-020)
Class M3 (+/-300V)
(per AEC-Q100-003)
Class 2 (+/-3000V)
(per AEC-Q100-002)
Class C6 (+/-1000V)
(per AEC-Q100-011)
Class II
(per AEC-Q100-004)
Yes
Qualification standards can be found at International Rectifier’s web site http://www.irf.com/
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services at any time and to discontinue any product or services without notice. Part numbers designated with the “AU”
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