DMP2039UFDE4

DMP2039UFDE4
25V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
Features and Benefits
ID
RDS(on) max
TA = 25°C
26mΩ @ VGS = -4.5V
-7.3
40mΩ @ VGS = -1.8V
-6.0
-25V
•
Low RDS(ON) – ensures on state losses are minimized
•
•
•
•
•
•
•
0.4mm profile – ideal for low profile applications
2
PCB footprint of 4mm
Low Input Capacitance
ESD Protected Gate
Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
Mechanical Data
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
•
•
•
•
•
Load Switching
Battery Management Application
Power Management Functions
•
•
•
•
Case: X2-DFN2020-6
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.006 grams (approximate)
Drain
X2-DFN2020-6
Gate
Gate
Protection
Diode
Bottom View
ESD PROTECTED
Top View
Source
Equivalent Circuit
Bottom View
Internal Schematic
Ordering Information (Note 3)
Part Number
DMP2039UFDE4-7
Notes:
Case
X2-DFN2020-6
Packaging
3,000/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
PD
Date Code Key
Year
Code
Month
Code
2011
Y
Jan
1
2012
Z
Feb
2
DMP2039UFDE4
Document number: DS35675 Rev. 3 - 2
Mar
3
YM
Marking Information
PD = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
Dot Denotes Pin 1
2013
A
Apr
4
May
5
2014
B
Jun
6
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2015
C
Jul
7
Aug
8
2016
D
Sep
9
Oct
O
2017
E
Nov
N
Dec
D
March 2012
© Diodes Incorporated
DMP2039UFDE4
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = -4.5V
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
Steady
State
t<5s
Continuous Drain Current (Note 5) VGS = -1.8V
Steady
State
t<5s
ID
-9.2
-7.3
A
ID
-6.0
-4.7
A
Units
V
V
A
-7.6
-6.0
-60
-2.0
ID
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Continuous Source-Drain Diode Current
Thermal Characteristics
ID
Value
-25
±8
-7.3
-5.8
IDM
IS
A
A
A
@TA = 25°C unless otherwise specified
Characteristic
Symbol
TA = 25°C
TA = 70°C
Steady state
t<5s
TA = 25°C
TA = 70°C
Steady state
t<5s
Steady state
Total Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient (Note 4)
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Value
0.69
0.44
182
113
2.4
1.5
52
33
9.1
-55 to +150
Units
W
°C/W
W
°C/W
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
-25
⎯
⎯
⎯
⎯
⎯
⎯
-1
±10
µA
VGS(th)
Static Drain-Source On-Resistance
RDS (ON)
|Yfs|
VSD
-0.4
⎯
⎯
⎯
⎯
⎯
⎯
⎯
19
24
29
35
14
-0.7
-1.0
26
33
40
70
⎯
-1.0
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2530
203
177
9.1
28.2
48.7
3.2
5.0
15.1
23.5
137.6
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
V
µA
V
mΩ
mS
V
pF
pF
pF
Ω
Test Condition
VGS = 0V, ID = -250μA
VDS = -25V, VGS = 0V
VGS = ±8.0V, VDS = 0V
VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -6.4A
VGS = -2.5V, ID = -4.8A
VGS = -1.8V, ID = -2.5A
VGS = -1.5V, ID = -1.5A
VDS = -5V, ID = -4A
VGS = 0V, IS = -1A
VDS = -15V, VGS = 0V
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1.0MHz
nC
VDS = -15V, ID = -4.0A
nS
VDD = -15V, VGS = -4.5V, RG = 1Ω,
ID = -4.0A
4. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
6. Short duration pulse test used to minimize self-heating effect
7. Guaranteed by design. Not subject to production testing.
DMP2039UFDE4
Document number: DS35675 Rev. 3 - 2
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© Diodes Incorporated
DMP2039UFDE4
20
20
VGS = 8.0V
VGS = 4.5V
VGS = 2.0V
12
-ID, DRAIN CURRENT (A)
-ID, DRAIN CURRENT (A)
16
VGS = 1.5V
VGS = 1.8V
8
4
0
10
5
TA = 150°C
0
TA = 125°C
1
2
3
4
-VDS, DRAIN -SOURCE VOLTAGE(V)
Fig. 1 Typical Output Characteristics
0.06
0.05
0.04
0.03
0.02
0.01
0
1
2
3
4
5
6
7
8
-ID, DRAIN SOURCE CURRENT
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
9
0
10
RDS(on), DRAIN-SOURCE ON-RESISTANCE (Ω)
1.5
1.3
1.1
0.9
0.7
0.5
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
DMP2039UFDE4
Document number: DS35675 Rev. 3 - 2
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TA = 85°C
TA = 25°C
T A = -55°C
0
5
1.7
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (Normalized)
15
VGS = 1.2V
RDS(ON), DRAIN-SOURCE ON-RESISTANCE(Ω)
RDS(ON),DRAIN-SOURCE ON-RESISTANCE(Ω)
VDS = -5.0V
VGS = 2.5V
0.5
1.0
1.5
2.0
2.5
-VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
3.0
0.04
VGS = -4.5V
TA = 150 °C
0.03
TA = 125°C
T A = 85°C
0.02
T A = 25°C
TA = -55°C
0.01
0
0
4
8
12
16
-ID, DRAIN SOURCE CURRENT (A)
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
20
0.06
0.05
0.04
VGS = -2.5V
ID = -5A
0.03
VGS = -4.5V
ID = -10A
0.02
0.01
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
March 2012
© Diodes Incorporated
DMP2039UFDE4
20
18
1.2
16
-IS, SOURCE CURRENT (A)
VGS(TH), GATE THRESHOLD VOLTAGE(V)
1.4
1.0
0.8
0.6
0.4
14
12
10
8
6
4
0.2
2
0
-50
0
0.4
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0.6
0.8
1.0
1.2
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
100,000
-IDSS, LEAKAGE CURRENT (nA)
CT, JUNCTION CAPACITANCE (pF)
f = 1MHz
Ciss
Coss
Crss
10,000
TA = 150°C
1,000
TA = 125°C
100
TA = 85°C
10
T A = 25°C
0
5
10
15
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
1
20
5
10
15
20
25
-VDS, DRAIN-SOURCE VOLTAGE(V)
Fig. 10 Typical Drain-Source Leakage Current vs. Voltage
8
0
100
6
-ID, DRAIN CURRENT (A)
-VGS, GATE-SOURCE VOLTAGE (V)
PW = 10µs
RDS(on)
Limited
4
2
0
10
DC
1
PW = 10s
PW = 1s
PW = 100ms
PW = 10ms
0.1 TJ(max) = 150°C
TA = 25°C
VGS = -8V
Single Pulse
DUT on 1 * MRP Board
0
5
10 15 20 25 30 35 40 45 50
Qg, TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
DMP2039UFDE4
Document number: DS35675 Rev. 3 - 2
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0.01
0.01
PW = 1ms
PW = 100µs
0.1
1
10
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 SOA, Safe Operation Area
100
March 2012
© Diodes Incorporated
DMP2039UFDE4
r(t), TRANSIENT THERMAL RESISTANCE
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
R θJA(t) = r(t) * R θJA
R θJA = 178°C/W
Duty Cycle, D = t1/ t2
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIMES (sec)
Fig. 13 Transient Thermal Resistance
10
100
1,000
Package Outline Dimensions
A1
A3
A
D
e
L
D2
E
E2
L1
Z(3X)
DMP2039UFDE4
Document number: DS35675 Rev. 3 - 2
e
X2-DFN2020-6
Dim
Min
Max
Typ
A
0.40
−
−
A1
0
0.05
0.03
A3
0.13
−
−
b
0.25
0.35
0.30
D
1.95
2.05
2.00
D2
0.85
1.05
0.95
E
1.95
2.05
2.00
E2
1.40
1.60
1.50
e
0.65
−
−
L
0.25
0.35
0.30
L1
1.35
1.45
1.40
Z
0.20
−
−
All Dimensions in mm
b(6X)
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DMP2039UFDE4
Suggested Pad Layout
X2
X1
Y
Dimensions
Y3
Y2
Y1
X (6x)
C
X
X1
X2
Y
Y1
Y2
Y3
Value
(in mm)
0.650
0.400
1.050
1.700
0.500
1.600
1.600
2.300
C
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DMP2039UFDE4
Document number: DS35675 Rev. 3 - 2
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© Diodes Incorporated
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