D a t a S h e e t , R e v. 1 . 0 , M ar c h 2 00 8 B TS 43 00 S G A Smart High-Side Power Switch A u to m o t i v e P o w e r BTS 4300SGA 1 Overview 3 2 Block Diagram 5 3 3.1 3.2 3.3 Pin Configuration 6 Pin Assignment 6 Pin Definitions and Functions 6 Voltage and Current Definition 7 4 4.1 4.2 4.3 General Product Characteristics 8 Absolute Maximum Ratings 8 Functional Range 9 Thermal Resistance 9 5 5.1 5.2 5.3 5.4 Power Stage 10 Output ON-State Resistance 10 Turn ON / OFF Characteristics 10 Inductive Output Clamp 11 Electrical Characteristics Power Stage 12 6 6.1 6.2 6.3 6.4 6.5 Protection Mechanisms 13 Undervoltage Protection 13 Overvoltage Protection 13 Reverse Polarity Protection 14 Overload Protection 14 Electrical Characteristics Protection Functions 16 7 7.1 7.2 7.2.1 7.2.2 7.3 Diagnostic Mechanism 17 ST Pin 17 ST Signal in Case of Failures 17 Diagnostic in Open Load, Channel OFF 17 ST Signal in case of Over Temperature 19 Electrical Characteristics Diagnostic Functions 20 8 8.1 8.2 Input Pin 21 Input Circuitry 21 Electrical Characteristics 21 9 9.1 Application Information 22 Further Application Information 22 10 Package Outlines 23 11 Revision History 24 Datasheet 2 1.0, 2007-19-12 Smart High-Side Power Switch 1 BTS4300SGA Overview Basic Features • • • • • • • • • • Fit for 12V application One Channel device Very Low Stand-by Current CMOS Compatible Inputs Electrostatic Discharge Protection (ESD) Optimized Electromagnetic Compatibility Logic ground independent from load ground Very low leakage current from OUT to the load in OFF state Green Product (RoHS compliant) AEC Qualified PG-DSO-8-24 Description The BTS4300SGA is a single channel Smart High-Side Power Switch. It is embedded in a PG-DSO-8-24 package, providing protective functions and diagnostics. The power transistor is built by a N-channel power MOSFET with charge pump. The device is monolithically integrated in Smart technology. It is specially designed to drive Relay or LED in the harsh automotive environment. Table 1 Electrical Parameters (short form) Parameter Symbol Value Operating voltage range VSOP VS (AZ) RDS(ON) IL (nom) IL_SCR IS(off) -Vs(REV) 5V .... 34V Over voltage protection Maximum ON State resistance at Tj = 150°C Nominal load current Minimum current limitation Standby current for the whole device with load Maximum reverse battery voltage 41V 600mΩ 0.4A 0.4A 26µA 32V Diagnostic Feature • • Open drain diagnostic output Open load detection in OFF state Type Package Marking BTS4300SGA PG-DSO-8-24 4300SGA Data Sheet 3 Rev. 1.0, 2008-03-18 BTS4300SGA Overview Protection Functions • • • • • • • Short circuit protection Overload protection Current limitation Thermal shutdown with restart Overvoltage protection (including load dump) Loss of ground and loss of battery protection Electrostatic discharge protection (ESD) Application • All types of relays, resistive and capacitive loads Data Sheet 4 Rev. 1.0, 2008-03-18 BTS4300SGA Block Diagram 2 Block Diagram VS voltage sensor internal power supply over temperature driver logic IN gate control & charge pump ESD protection T clamp for inductive load over current switch off OUT open load detection ST GND Figure 1 Data Sheet Block diagram.emf Block diagram for the BTS4300SGA 5 Rev. 1.0, 2008-03-18 BTS4300SGA Pin Configuration 3 Pin Configuration 3.1 Pin Assignment GND 1 8 VS IN 2 7 VS OUT 3 6 VS ST 4 5 VS Figure 2 Pin Configuration 3.2 Pin Definitions and Functions Pin Symbol Function 1 GND Ground; Ground connection 2 IN Input channel; Input signal. Activate the channel in case of logic high level 3 OUT Output; Protected High side power output channel 4 ST Diagnostic feedback; of channel. Open drain. 5, 6, 7, 8 VS Battery voltage; Design the wiring for the simultaneous max. short circuit current and also for low thermal resistance Data Sheet 6 Rev. 1.0, 2008-03-18 BTS4300SGA Pin Configuration 3.3 Voltage and Current Definition Figure 3 shows all terms used in this data sheet, with associated convention for positive values. IS VS VD S VS IIN IN IL OUT VIN VOU T IST ST V ST GND R GND IGN D Voltage and current convention single avec diag.vsd Figure 3 Data Sheet Voltage and current definition 7 Rev. 1.0, 2008-03-18 BTS4300SGA General Product Characteristics 4 General Product Characteristics 4.1 Absolute Maximum Ratings Absolute Maximum Ratings 1) Tj = 25 °C; (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Conditions – Min. Max. – 40 V 0 32 V 0 28 V Voltages 4.1.1 4.1.2 4.1.3 VS Reverse polarity Voltage - VS(REV) Supply voltage for short circuit protection Vbat(SC) Supply voltage RECU = 20mΩ, RCable=16mΩ/m, LCable=1µH/m, l = 0 or 5m 2) see Chapter 6 Input pins 4.1.4 Voltage at INPUT pins 4.1.5 Current through INPUT pins VIN IIN -10 16 V – -5 5 mA – Power stage 4.1.6 Load current | IL | – IL(LIM) A – 4.1.7 Power dissipation (DC), PTOT – 0.8 W 4.1.8 Inductive load switch off energy dissipation, Single pulse EAS – 800 mJ TA=85°C, Tj <150°C Tj=150°C, VS=13.5V, IL = 0.3A Tj Tstg -40 150 °C – -55 150 °C – VESD VESD -1 1 kV HBM3) -5 5 kV HBM3) Temperatures 4.1.9 Junction Temperature 4.1.10 Storage Temperature ESD Susceptibility 4.1.11 ESD Resistivity IN pin 4.1.12 ESD Resistivity all other pins 1) Not subject to production test, specified by design 2) In accordance to AEC Q100-012 and AEC Q101-006 3) ESD susceptibility HBM according to EIA/JESD 22-A 114B Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous repetitive operation. Data Sheet 8 Rev. 1.0, 2008-03-18 BTS4300SGA General Product Characteristics 4.2 Pos. Functional Range Parameter Symbol Limit Values Min. Max. Unit Conditions Operating Voltage VSOP 5 34 V VIN = 4.5V, RL = 47Ω, VDS < 0.5V 4.2.2 Undervoltage shutdown 5 V – Undervoltage restart of charge pump VSUV VS(u cp) – 4.2.3 – 5.5 V – 4.2.4 Operating current IGND 1.3 mA VIN = 5V 4.2.5 Standby current IS(OFF) 26 µA Tj = 150°C, VIN = 0V 4.2.1 – Note: Within the functional range the IC operates as described in the circuit description. The electrical characteristics are specified within the conditions given in the related electrical characteristics table. 4.3 Pos. Thermal Resistance Parameter 4.3.1 Junction to Soldering Point 4.3.2 Junction to Ambient: channel active Symbol RthJC RthJA Limit Values Unit Conditions 15 K/W –1) – K/W with 6cm² cooling area1) Min. Typ. Max. – – – 83 1) Not subject to production test, specified by design Data Sheet 9 Rev. 1.0, 2008-03-18 BTS4300SGA Power Stage 5 Power Stage The power stage is built by an N-channel vertical power MOSFET (DMOS) with charge pump. 5.1 Output ON-State Resistance The ON-state resistance RDS(ON) depends on the supply voltage as well as the junction temperature Tj. Figure 4 shows the dependencies for the typical ON-state resistance. The behavior in reverse polarity is described in Chapter 6.3. 1000 600 900 800 700 400 Rdson (m Ω ) Rdson (m ) 500 300 200 600 500 400 300 100 200 100 0 14 0 12 0 10 0 80 60 40 20 0 -2 0 -4 0 0 0 1 2 3 4 Junction tem perature (°C) Figure 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 Battery voltage (V) Rdson.vsd Typical ON-state resistance A high signal (See Chapter 8) at the input pin causes the power DMOS to switch ON with a dedicated slope, which is optimized in terms of EMC emission. 5.2 Turn ON / OFF Characteristics Figure 5 shows the typical timing when switching a resistive load. IN V IN_H_min VIN_L_max t V OUT 90% VS dV/dt OFF tON 70% VS dV/dt ON 30% VS t OFF 10% VS t Switching times.vsd Figure 5 Data Sheet Turn ON/OFF (resistive) timing 10 Rev. 1.0, 2008-03-18 BTS4300SGA Power Stage 5.3 Inductive Output Clamp When switching OFF inductive loads with high side switches, the voltage VOUT drops below ground potential, because the inductance intends to continue driving the current. To prevent the destruction of the device due to high voltages, there is a voltage clamp mechanism implemented that keeps the negative output voltage at a certain level (VS-VDS(AZ)). Please refers to Figure 6 and Figure 7 for details. Nevertheless, the maximum allowed load inductance is limited. VS V DS IN LOGIC IL V BAT OUT GND VIN VOUT L, RL Output clamp.vsd Figure 6 Output clamp IN t VOUT VS t VS-VDS(AZ) tpeak IL t Switching an inductance.vsd Figure 7 Switching in inductance timing Maximum Load Inductance During demagnetization of inductive loads, energy has to be dissipated in the BTS4300SGA. This energy can be calculated with following equation: V S – V DS ( AZ ) L RL × IL - + I L E = V DS ( AZ ) × -------- × --------------------------------------- + ln -------------------------------------- V S – V DS ( AZ ) RL RL Data Sheet 11 Rev. 1.0, 2008-03-18 BTS4300SGA Power Stage Following equation simplifies under the assumption of RL = 0Ω. VS 2 1 E = --- × LI × 1 – ------------------------------------------ 2 V S – V DS ( AZ ) ) The energy, which is converted into heat, is limited by the thermal design of the component. 5.4 Electrical Characteristics Power Stage Electrical Characteristics: Power stage VS = 13.5V, Tj = -40 °C to +150 °C,(unless otherwise specified). Typical values are given at Tj = 25°C Pos. 5.4.1 Parameter ON-state resistance per channel Symbol RDS(ON) Limit Values Min. Typ. Max. – 300 – Unit Conditions mΩ Tj = 25°C, 1) IL = 0.3A, VBB = 9...40V VIN= 5V, See Figure 4 – 480 600 Tj =150°C 5.4.2 Nominal load current IL(nom) 0.4 – – A 5.4.3 Drain to Source Clamping Voltage VDS(AZ) = VS-VOUT VDS(AZ) 41 47 – V 5.4.4 Output leakage current IL(OFF) – – 12 µA 5.4.5 Slew rate ON 10% to 30% VOUT dV/dtON –- –- 2 V/µs 5.4.6 Slew rate OFF 70% to 40% VOUT -dV/dtOFF – – 2 V/µs 5.4.7 Turn-ON time to 90% VOUT Includes propagation delay tON – – 140 µs 5.4.8 Turn-OFF time to 10% VOUTIncludes propagation delay tOFF – – 170 µs TA =85°C1), Tj <150°C IDS = 4mA2) VIN=0V, VOUT = 0V RL=47Ω, Vs=13.5V, See Figure 5 1) Not subject to production test, specified by design 2) Voltage is measured by forcing IDS. Data Sheet 12 Rev. 1.0, 2008-03-18 BTS4300SGA Protection Mechanisms 6 Protection Mechanisms The device provides embedded protective functions. Integrated protection functions are designed to prevent the destruction of the IC from fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are designed for neither continuous nor repetitive operation. 6.1 Undervoltage Protection Below VSOP_min, the under voltage mechanism is met. If the supply voltage is below the under voltage mechanism, the device is OFF (turns OFF). As soon as the supply voltage is above the under voltage mechanism, then the device can be switched ON and the protection functions are operational. 6.2 Overvoltage Protection There is a clamp mechanism for over voltage protection. To guarantee this mechanism operates properly in the application, the current in the zener diode ZDAZ has to be limited by a ground resistor. Figure 8 shows a typical application to withstand overvoltage issues. In case of supply greater than VS(AZ), the power transistor switches ON and the voltage across logic section is clamped. As a result, the internal ground potential rises to VS - VS(AZ). Due to the ESD zener diodes, the potential at pin IN rises almost to that potential, depending on the impedance of the connected circuitry. Integrated resistors are provided at the IN pin to protect the input circuitry from excessive current flow during this condition. VS VBAT IN R ST ZD AZ R IN LOGIC ST OUT ZD ESD GND R GND Overvoltage protection single with diag.vsd Figure 8 Over voltage protection with external components In the case the supply voltage is in between of VS(SC) max and VDS(AZ), the output transistor is still operational and follow the input. If the channel is in ON state, parameters are no longer warranted and lifetime is reduced compared to normal mode. This specially impacts the short circuit robustness, as well as the maximum energy EAS the device can handle. Data Sheet 13 Rev. 1.0, 2008-03-18 BTS4300SGA Protection Mechanisms 6.3 Reverse Polarity Protection In case of reverse polarity, the intrinsic body diode causes power dissipation. The current in this intrinsic body diode is limited by the load itself. Additionally, the current into the ground path and the logical pins has to be limited to the maximum current described in Chapter 4.1, sometimes with an external resistor. Figure 9 shows a typical application. The RGND resistor is used to limit the current in the zener protection of the device. Resistors RIN and RST is used to limit the current in the logic of the device and in the ESD protection stage. The recommended value for RGND is 150Ω, for RST 0/1= 15kΩ. In case the over voltage is not considered in the application, RGND can be replaced by a Shottky diode. Vc cµC Micro controller (e.g. XC22xx) RSTPU R ST VS VBAT ST -VDS(REV) R IN Zdbody IN OUT I L(nom) ZDESD G ND RGND Rev ers e Polarity s ingle with diag.v sd Figure 9 Reverse polarity protection with external components 6.4 Overload Protection In case of overload, or short circuit to ground, the BTS4300SGA offers two protections mechanisms. Current limitation At first step, the instantaneous power in the switch is maintained to a safe level by limiting the current to the maximum current allowed in the switch IL(LIM). During this time, the DMOS temperature is increasing, which affects the current flowing in the DMOS. Thermal protection At thermal shutdown, the device turns OFF and cools down. A restart mechanism is used, after cooling down, the device restarts and limits the current to IL(SCR). Figure 10 shows the behavior of the current limitation as a function of time. Data Sheet 14 Rev. 1.0, 2008-03-18 BTS4300SGA Protection Mechanisms IN t IL IL(LIM) IL(SCr) t ST TdST(+) t Current limitation with diag full . vsd Figure 10 Data Sheet Current limitation function of the time 15 Rev. 1.0, 2008-03-18 BTS4300SGA Protection Mechanisms 6.5 Electrical Characteristics Protection Functions Electrical Characteristics: Protection VS = 13.5V, Tj = -40 °C to +150 °C. Typical values are given at Tj = 25°C Pos. Parameter Symbol Limit Values Unit Conditions Min. Typ. Max. -VDS(REV) – 600 – mV TJ = 150°C VS(AZ) 41 – – V Is = 4mA Reverse polarity 6.5.1 Drain source diode voltage during reverse polarity Overvoltage 6.5.2 Over voltage protection Overload condition 6.5.3 Load current limitation IL(LIM) – – 0.4 – 1.2 – 2 – – A Tj = -40°C, Tj = 25°C, Tj = 150°C, VS = 20V 6.5.4 Repetitive short circuit current limitation IL(SCR) – 1 – A 1) 6.5.5 Thermal shutdown temperature 150 – – °C –1) 6.5.6 Thermal shutdown hysteresis TjSC ∆TJT – 10 – K –1) 1) Not subject to production test, but specified by design Data Sheet 16 Rev. 1.0, 2008-03-18 BTS4300SGA Diagnostic Mechanism 7 Diagnostic Mechanism For diagnosis purpose, the BTS4300SGA provides a status pin. 7.1 ST Pin BTS4300SGA status pin is an open drain, active low circuit. Figure 11 shows the equivalent circuitry. As long as no “hard” failure mode occurs (Short circuit to GND / Over temperature or open load in OFF), the signal is permanently high, and due to a required external pull-up to the logic voltage will exhibit a logic high in the application. A suggested value for the RPU ST is 15kΩ. . VccµC R PU ST R ST ST Channel 0 Diagnostic Logic ZDESD GND Figure 11 Status output circuitry 7.2 ST Signal in Case of Failures ST pin full diag.vsd Table 3 gives a quick reference for the logical state of the ST pin during device operation. Table 3 ST pin truth table Device operation Normal operation Open Load channel Over temp channel Short circuit to GND IN ST L L H H H H L H L H H H L L H H L L L L H H 1) OUT L 1) L VouT < 2V typ. 7.2.1 Diagnostic in Open Load, Channel OFF For open load diagnosis in OFF-state, an external output pull-up resistor (ROL) is recommended. For calculation of the pull-up resistor value, the leakage currents and the open load threshold voltage VOL(OFF) has to be taken into account. Figure 12 gives a sketch of the situation and Figure 13 shows the typical timing diagram. Ileakage defines the leakage current in the complete system, including IL(OFF) (see Chapter 5.4) and external leakages e.g due to humidity, corrosion, etc... in the application. Data Sheet 17 Rev. 1.0, 2008-03-18 BTS4300SGA Diagnostic Mechanism To reduce the stand-by current of the system, an open load resistor switch SOL is recommended. If the channel is OFF, the output is no longer pulled down by the load and VOUT voltage rises to nearly VS. This is recognized by the device as open load. The voltage threshold is given by VOL(OFF). In that case, the ST signal is switched to a logical low VSTL. Vbat SOL VS IL(OL) R OL OUT OL comp. Ileakage GND V OL( OFF) Rleakage R GND Open Load in OFF .vsd Figure 12 Open load detection in OFF electrical equivalent circuit IN t V OUT VOL(OFF) IL t t ST V ST(HIGH) VST(LOW) t Diagnostic In Open load full diag.vs Figure 13 Data Sheet ST in open load condition 18 Rev. 1.0, 2008-03-18 BTS4300SGA Diagnostic Mechanism 7.2.2 ST Signal in case of Over Temperature In case of over temperature, the junction temperature reaches the thermal shutdown temperature TjSC. In that case, the ST signal is stable and remains to toggling between VST(L) and VST(H). Figure 14 gives a sketch of the situation. IN t V OUT t ST t T JSC ∆T JSC TJ t Diagnostic In Overload full toggling.vs Figure 14 Sense signal in overtemperature condition . Data Sheet 19 Rev. 1.0, 2008-03-18 BTS4300SGA Diagnostic Mechanism 7.3 Electrical Characteristics Diagnostic Functions Electrical Characteristics: Diagnostics VS = 13.5V, Tj = -40 °C to +150 °C, (unless otherwise specified) Typical values are given at Vs = 13.5V, Tj = 25°C Pos. Parameter Symbol Limit Values Unit Conditions Min. Typ. Max. – 3.0 – V VIN = 0V – 5 – µA included in the standby current Load condition threshold for diagnostic 7.3.1 Open Load detection voltage 7.3.1 Open load detection current VOL(OFF) IL(OL) IS(OFF) ST pin 7.3.2 7.3.3 Status output (open drain) High level; Zener limit voltage VST (HIGH) Status output (open drain) Low level VST (LOW) 5.4 6.1 – V IST = +1,6mA1), Zener Limit voltage – – 0.6 V IST =+1,6mA1) – 300 600 µs –2) – 2.8 – V – Diagnostic timing 7.3.4 Status invalid after positive input tdST(+) slope 7.3.5 Short circuit detection voltage VOUT (SC) 1) If ground resistor RGND is used, the voltage drop across this resistor has to be added 2) Not subject to production test, specified by design Data Sheet 20 Rev. 1.0, 2008-03-18 BTS4300SGA Input Pin 8 Input Pin 8.1 Input Circuitry The input circuitry is CMOS compatible. The concept of the Input pin is to react to voltage transition and not to voltage threshold. With the Schmidt trigger, it is impossible to have the device in an un-defined state, if the voltage on the input pin is slowly increasing or decreasing. The output is either OFF or ON but cannot be in an linear or undefined state. The input circuitry is compatible with PWM applications. Figure 15 shows the electrical equivalent input circuitry. The pull down current source ensures the channel is OFF with a floating input. IN RI II To driver’s logic ESD Input circuitry.vsd Figure 15 Input pin circuitry 8.2 Electrical Characteristics Electrical Characteristics: Diagnostics VS = 13.5V, Tj = -40 °C to +150 °C, Typical values are given at Vs = 13.5V, Tj = 25°C Pos. Parameter Symbol Limit Values Unit Conditions Min. Typ. Max. – – 0.8 V –1) 2.2 – – V –1) – 0.3 – V –2) 1 – 30 µA 1 – 30 µA VIN= 0.7V VIN= 5V 1.5 3.5 5 kΩ See Figure 15 INput pins characteristics 8.2.1 Low level input voltage 8.2.2 High level input voltage 8.2.3 Input voltage hysteresis 8.2.4 Low level input current 8.2.5 High level input current 8.2.6 Input resistance VIN(L) VIN(H) VIN(HYS) IIN(L) IIN(H) RI 1) If ground resistor RGND is used, the voltage drop across this resistor has to be added 2) Not subject to production test, specified by design Data Sheet 21 Rev. 1.0, 2008-03-18 BTS4300SGA Application Information 9 Application Information Note: The following information is given as a hint for the implementation of the device only and shall not be regarded as a description or warranty of a certain functionality, condition or quality of the device. VBAT VDD VDD RPUST VBAT_SW R IN Vdd ROL Vs OUT Microcontroller (e.g. XC22xx) IN IN ST OUT RST GND GND R GND Application example single avec diag.vsd IS Figure 16 Application diagram with BTS4300SGA Note: This is a very simplified example of an application circuit. The function must be verified in the real application. 9.1 • Further Application Information For further information you may visit http://www.infineon.com/ Data Sheet 22 Rev. 1.0, 2008-03-18 BTS4300SGA Package Outlines 10 Package Outlines 1.27 0.1 0.41 +0.1 -0.05 +0.05 -0.01 0.2 C 0.64 ±0.25 0.2 M A C x8 8 5 Index Marking 1 4 5 -0.21) 8˚ MAX. 4 -0.21) 1.75 MAX. 0.1 MIN. (1.5) 0.33 ±0.08 x 45˚ 6 ±0.2 A Index Marking (Chamfer) 1) Figure 17 Does not include plastic or metal protrusion of 0.15 max. per side PG-DSO-8-24 (Plastic Dual Small Outline Package) Green Product (RoHS compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pbfree finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). Data Sheet 23 Rev. 1.0, 2008-03-18 BTS4300SGA Revision History 11 Revision History Version Date Changes 1.0 2008-03-18 Creation of the data sheet Data Sheet 24 Rev. 1.0, 2008-03-18 Edition 2008-03-18 Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.