BTS432E2 E3062A Data Sheet (215 KB, EN)

PROFET® BTS 432 E2
Smart Highside Power Switch
Product Summary
VLoad dump
80
Vbb-VOUT Avalanche Clamp
58
Vbb (operation)
4.5 ... 42
Vbb (reverse)
-32
RON
38
IL(SCp)
44
IL(SCr)
35
IL(ISO)
11
Features
• Load dump and reverse battery protection1)
• Clamp of negative voltage at output
• Short-circuit protection
• Current limitation
• Thermal shutdown
• Diagnostic feedback
• Open load detection in ON-state
• CMOS compatible input
• Electrostatic discharge (ESD) protection
• Loss of ground and loss of Vbb protection2)
• Overvoltage protection
• Undervoltage and overvoltage shutdown with autorestart and hysteresis
• Green Product (RoHS compliant)
• AEC qualified
PG-TO220-5-11
V
V
V
V
mΩ
A
A
A
PG-TO263-5-2
5
1
Standard
5
SMD
Application
• µC compatible power switch with diagnostic feedback
for 12 V and 24 V DC grounded loads
• All types of resistive, inductive and capacitve loads
• Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, integrated in Smart SIPMOS chip on chip technology. Providing protective functions.
R bb
Voltage
Overvoltage
Current
Gate
source
protection
limit
protection
+ V bb
3
V Logic
2
Charge pump
sensor
Level shifter
Limit for
unclamped
ind. loads
Rectifier
IN
OUT
5
Temperature
sensor
Open load
ESD
4
Voltage
Logic
Load
detection
ST
Short circuit
detection
GND

PROFET
1
Signal GND
1)
2)
Load GND
No external components required, reverse load current limited by connected load.
Additional external diode required for charged inductive loads
Data Sheet
1 of 14
2010-Jan-26
PROFET® BTS 432 E2
Pin
Symbol
Function
1
GND
Logic ground
2
IN
Input, activates the power switch in case of logical high signal
3
Vbb
Positive power supply voltage,
the tab is shorted to this pin
4
ST
Diagnostic feedback, low on failure
5
OUT
(Load, L)
Output to the load
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Supply voltage (overvoltage protection see page 3)
Load dump protection VLoadDump = UA + Vs, UA = 13.5 V
RI= 2 Ω, RL= 1.1 Ω, td= 200 ms, IN= low or high
Load current (Short-circuit current, see page 4)
Operating temperature range
Storage temperature range
Power dissipation (DC)
Inductive load switch-off energy dissipation,
single pulse
Tj=150 °C:
Electrostatic discharge capability (ESD)
(Human Body Model)
Input voltage (DC)
Current through input pin (DC)
Current through status pin (DC)
Symbol
Vbb
Vs3)
Values
IL
Tj
Tstg
Ptot
self-limited
-40 ...+150
-55 ...+150
125
A
°C
1.7
2.0
J
kV
-0.5 ... +6
±5.0
±5.0
V
mA
≤1
≤ 75
typ. 33
K/W
EAS
VESD
VIN
IIN
IST
63
66.5
Unit
V
V
W
see internal circuit diagrams page 6...
Thermal resistance
3)
4)
chip - case:
junction - ambient (free air):
SMD version, device on pcb4):
RthJC
RthJA
VS is setup without DUT connected to the generator per ISO 7637-1 and DIN 40839
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.
Data Sheet
2
2010-Jan-26
PROFET® BTS 432 E2
Electrical Characteristics
Parameter and Conditions
Symbol
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Values
min
typ
max
Unit
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
IL = 2 A
Tj=25 °C: RON
--
30
38
mΩ
IL(ISO)
9
55
11
70
--
A
IL(GNDhigh)
--
--
1
mA
ton
toff
50
10
160
--
300
80
µs
dV /dton
0.4
--
2.5
V/µs
-dV/dtoff
1
--
5
V/µs
Vbb(on)
Vbb(under)
Vbb(u rst)
Vbb(ucp)
4.5
2.4
---
---6.5
42
4.5
4.5
7.5
V
V
V
V
∆Vbb(under)
--
0.2
--
V
Vbb(over)
Vbb(o rst)
∆Vbb(over)
Vbb(AZ)
--0.2
-67
12
18
6
52
----
V
V
V
V
25
60
--
µA
IL(off)
42
42
-60
63
----
IGND
--
1.1
--
mA
Tj=150 °C:
Nominal load current (pin 3 to 5)
ISO Proposal: VON = 0.5 V, TC = 85 °C
Output current (pin 5) while GND disconnected or
GND pulled up, VIN= 0, see diagram page 7,
Tj =-40...+150°C
Turn-on time
to 90% VOUT:
Turn-off time
to 10% VOUT:
RL = 12 Ω, Tj =-40...+150°C
Slew rate on
10 to 30% VOUT, RL = 12 Ω, Tj =-40...+150°C
Slew rate off
70 to 40% VOUT, RL = 12 Ω, Tj =-40...+150°C
Operating Parameters
Operating voltage 5)
Tj =-40...+150°C:
Undervoltage shutdown
Tj =-40...+150°C:
Undervoltage restart
Tj =-40...+150°C:
Undervoltage restart of charge pump
see diagram page 12
Tj =-40...+150°C:
Undervoltage hysteresis
∆Vbb(under) = Vbb(u rst) - Vbb(under)
Overvoltage shutdown
Tj =-40...+150°C:
Overvoltage restart
Tj =-40...+150°C:
Overvoltage hysteresis
Tj =-40...+150°C:
6
)
Overvoltage protection
Tj =-40°C:
Tj =25...+150°C:
Ibb=40 mA
Standby current (pin 3)
Tj=-40...+25°C:
VIN=0
Tj=150°C:
Leakage output current (included in Ibb(off))
VIN=0
Operating current (Pin 1)7), VIN=5 V
5)
6)
7)
Ibb(off)
µA
At supply voltage increase up to Vbb= 6.5 V typ without charge pump, VOUT ≈Vbb - 2 V
see also VON(CL) in table of protection functions and circuit diagram page 7. Meassured without load.
Add IST, if IST > 0, add IIN, if VIN>5.5 V
Data Sheet
3
2010-Jan-26
PROFET® BTS 432 E2
Parameter and Conditions
Symbol
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Protection Functions8)
Initial peak short circuit current limit (pin 3 to 5)9),
IL(SCp)
( max 400 µs if VON > VON(SC) )
Tj =-40°C:
Tj =25°C:
Tj =+150°C:
Repetitive short circuit current limit
IL(SCr)
Tj = Tjt (see timing diagrams, page 10)
Short circuit shutdown delay after input pos. slope
VON > VON(SC),
Tj =-40..+150°C: td(SC)
Values
min
typ
max
--24
-44
--
74
---
A
22
35
--
A
80
--
400
µs
VON(CL)
--
58
--
V
VON(SC)
Tjt
∆Tjt
EAS
ELoad12
ELoad24
-150
---
8.3
-10
--
---1.7
1.3
1.0
V
°C
K
J
---
-120
32
--
V
Ω
2
2
---
900
750
mA
min value valid only, if input "low" time exceeds 30 µs
Output clamp (inductive load switch off)
at VOUT = Vbb – VON(CL), IL= 30 mA
Short circuit shutdown detection voltage
(pin 3 to 5)
Thermal overload trip temperature
Thermal hysteresis
Inductive load switch-off energy dissipation10),
Tj Start = 150 °C, single pulse
Vbb = 12 V:
Vbb = 24 V:
Reverse battery (pin 3 to 1) 11)
Integrated resistor in Vbb line
Diagnostic Characteristics
Open load detection current
(on-condition)
8)
9)
Unit
-Vbb
Rbb
Tj=-40 °C: IL (OL)
Tj=25..150°C:
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
Short circuit current limit for max. duration of 400 µs, prior to shutdown (see td(SC) page 4)
While demagnetizing load inductance, dissipated energy in PROFET is EAS= ∫ VON(CL) * iL(t) dt, approx.
VON(CL)
2
EAS= 1/2 * L * IL * (
), see diagram page 8.
VON(CL) - Vbb
11) Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load.
Reverse current IGND of ≈ 0.3 A at Vbb= -32 V through the logic heats up the device. Time allowed under
these condition is dependent on the size of the heatsink. Reverse IGND can be reduced by an additional
external GND-resistor (150 Ω). Input and Status currents have to be limited (see max. ratings page 2 and
circuit page 7).
10)
Data Sheet
4
2010-Jan-26
PROFET® BTS 432 E2
Parameter and Conditions
Symbol
Values
min
typ
max
VIN(T+)
1.5
--
2.4
V
VIN(T-)
1.0
--
--
V
-1
0.5
--
-30
V
µA
10
25
50
µA
80
200
400
µs
td(ST)
350
--
1600
µs
VST(high)
VST(low)
5.4
--
6.1
--
-0.4
V
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Input and Status Feedback12)
Input turn-on threshold voltage
Unit
Tj =-40..+150°C:
Input turn-off threshold voltage
Tj =-40..+150°C:
Input threshold hysteresis
Off state input current (pin 2)
∆ VIN(T)
VIN = 0.4 V: IIN(off)
On state input current (pin 2)
VIN = 3.5 V: IIN(on)
Status invalid after positive input slope
(short circuit)
Tj=-40 ... +150°C:
Status invalid after positive input slope
(open load)
Tj=-40 ... +150°C:
Status output (open drain)
Zener limit voltage Tj =-40...+150°C, IST = +1.6 mA:
ST low voltage Tj =-40...+150°C, IST = +1.6 mA:
12)
td(ST SC)
If a ground resistor RGND is used, add the voltage drop across this resistor.
Data Sheet
5
2010-Jan-26
PROFET® BTS 432 E2
Truth Table
Input-
Output
Status
Level
level
432E2
Normal
operation
Open load
L
H
L
H
L
H
H
H
H
L
Short circuit
to GND
Short circuit
to Vbb
Overtemperature
Undervoltage
Overvoltage
L
H
L
H
L
H
L
H
L
H
13)
H
L
L
H
H
L
L
L
L
L
L
H
L
H
H (L14)
L
L
H
H
H
H
L = "Low" Level
H = "High" Level
Terms
Input circuit (ESD protection)
Ibb
I IN
2
V
13)
14)
IN
VST
bb
IN
Vbb
IN
IL
PROFET
I ST
V
R
3
4
OUT
I
ESDZDI1 ZDI2
VON
5
I
I
GND
ST
GND
1
R
IGND
ZDI1 6.1 V typ., ESD zener diodes are not designed for
continuous current
VOUT
GND
Power Transistor off, high impedance
Low resistance short Vbb to output may be detected by no-load-detection
Data Sheet
6
2010-Jan-26
PROFET® BTS 432 E2
Status output
Overvolt. and reverse batt. protection
+5V
R ST(ON)
GND
+ V bb
V
ST
R IN
R bb
Z
IN
Logic
ESDZD
V
R ST ST
PROFET
GND
ESD-Zener diode: 6.1 V typ., max 5 mA;
RST(ON) < 250 Ω at 1.6 mA, ESD zener diodes are not
designed for continuous current
OUT
R GND
Signal GND
Rbb = 120 Ω typ., VZ +Rbb*40 mA = 67 V typ., add
RGND, RIN, RST for extended protection
Short Circuit detection
Fault Condition: VON > 8.3 V typ.; IN high
Open-load detection
+ V bb
ON-state diagnostic condition: VON < RON * IL(OL); IN
high
V
ON
+ V bb
OUT
Logic
unit
Short circuit
detection
VON
ON
OUT
Open load
detection
Logic
unit
Inductive and overvoltage output clamp
+ V bb
V
Z
V
ON
GND disconnect
OUT
GND
3
VON clamped to 58 V typ.
2
IN
Vbb
PROFET
4
V
bb
V
IN
V
ST
OUT
5
ST
GND
1
V
GND
Any kind of load. In case of Input=high is VOUT ≈ VIN - VIN(T+) .
Due to VGND >0, no VST = low signal available.
Data Sheet
7
2010-Jan-26
PROFET® BTS 432 E2
GND disconnect with GND pull up
3
3
2
IN
Vbb
high
2
PROFET
4
OUT
IN
PROFET
5
ST
4
GND
V
bb
V
IN ST
OUT
5
ST
GND
1
1
V
Vbb
V
V
GND
bb
Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND >0, no VST = low signal available.
Inductive Load switch-off energy
dissipation
Vbb disconnect with charged inductive
load
E bb
E AS
3
high
2
IN
Vbb
IN
PROFET
4
OUT
5
PROFET
ST
=
GND
V
ST
GND
1
ELoad
Vbb
OUT
EL
ER
bb
Energy dissipated in PROFET EAS = Ebb + EL - ER.
2
ELoad < EL, EL = 1/2 * L * I L
Data Sheet
8
2010-Jan-26
PROFET® BTS 432 E2
Options Overview
all versions: High-side switch, Input protection, ESD protection, load dump and
reverse battery protection , protection against loss of ground
Type
Logic version
BTS 432E2
Overtemperature protection
Tj >150 °C, latch function15)16)
Tj >150 °C, with auto-restart on cooling
Short-circuit to GND protection
switches off when VON>8.3 V typ.15)
(when first turned on after approx. 200 µs)
E
X
X
Open load detection
in OFF-state with sensing current 30 µA typ.
in ON-state with sensing voltage drop across
power transistor
X
Undervoltage shutdown with auto restart
X
Overvoltage shutdown with auto restart
X
Status feedback for
overtemperature
short circuit to GND
short to Vbb
X
X
-17)
open load
X
undervoltage
-
overvoltage
-
Status output type
CMOS
Open drain
X
Output negative voltage transient limit
(fast inductive load switch off)
to Vbb - VON(CL)
X
Load current limit
high level (can handle loads with high inrush currents)
X
medium level
low level (better protection of application)
15)
Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT ≠
0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch
between turn on and td(SC).
16) With latch function. Reseted by a) Input low, b) Undervoltage, c) Overvoltage
17) Low resistance short V to output may be detected by no-load-detection
bb
Data Sheet
9
2010-Jan-26
PROFET® BTS 432 E2
Timing diagrams
Figure 2b: Switching an inductive load
Figure 1a: Vbb turn on:
IN
V
bb
IN
t d(bb IN)
td(ST)
ST
*)
V
V
OUT
OUT
A
I
ST open drain
L
IL(OL)
t
t
A
in case of too early VIN=high the device may not turn on (curve A)
td(bb IN) approx. 150 µs
Figure 2a: Switching a lamp,
*) if the time constant of load is too large, open-load-status may
occur
Figure 3a: Turn on into short circuit,
IN
IN
ST
ST
V
V
OUT
OUT
td(SC)
I
I
L
L
t
t
td(SC) approx. 200µs if Vbb - VOUT > 8.3 V typ.
Data Sheet
10
2010-Jan-26
PROFET® BTS 432 E2
Figure 4a: Overtemperature:
Reset if Tj <Tjt
Figure 3b: Turn on into overload,
IN
IN
IL
ST
I L(SCp)
IL(SCr)
V
OUT
T
ST
J
t
t
Heating up may require several milliseconds , Vbb - VOUT < 8.3 V
typ.
Figure 5a: Open load: detection in ON-state, turn
on/off to open load
Figure 3c: Short circuit while on:
IN
IN
ST
ST
V
V OUT
IL
t
d(ST)
OUT
I
**)
L
open
t
t
**) current peak approx. 20 µs
Data Sheet
11
2010-Jan-26
PROFET® BTS 432 E2
Figure 6b: Undervoltage restart of charge pump
Figure 5b: Open load: detection in ON-state, open
load occurs in on-state
VON [V]
VON(CL)
V on
IN
off
td(ST OL1)
t d(OL ST2)
ST
V
V
OUT
off
V
V
bb(u rst)
I
normal
open
L
normal
V
V
bb(o rst)
bb(u cp)
bb(under)
t
bb(over)
on
V bb
Vbb [V]
td(ST OL1) = tbd µs typ., td(ST OL2) = tbd µs typ
charge pump starts at Vbb(ucp) =6.5 V typ.
Figure 6a: Undervoltage:
Figure 7a: Overvoltage:
IN
IN
V bb
Vbb
V
bb(under)
V ON(CL)
Vbb(over)
V bb(o rst)
Vbb(u cp)
V
bb(u rst)
V
OUT
V OUT
ST open drain
ST
t
Data Sheet
t
12
2010-Jan-26
PROFET® BTS 432 E2
Package and Ordering Code
All dimensions in mm
PG-TO220-5-11
SMD PG-TO263-5-2
BTS 432 E2
BTS432E2 E3062A
4.4
10 ±0.2
3.7 ±0.3
5 x 0.8 ±0.1
1)
3.9 ±0.4
M
A C
B
0.05
2.4
0.1
4.7 ±0.5
9.25 ±0.2
9.25 ±0.2
0...0.15
0.25
A
8.5 1)
0...0.15
C
0.5 ±0.1
4 x 1.7
(15)
2.8 ±0.2
8.6 ±0.3
0.05
2.4
1.6 ±0.3
1 ±0.3
1.27 ±0.1
10.2 ±0.3
1)
12.95
17 ±0.3
15.65 ±0.3
0...0.3
1.27 ±0.1
0...0.3
4.4
1.3 ±0.3
8.5 1)
3.7 -0.15
2.7 ±0.3
A
7.55 1)
10 ±0.2
9.9 ±0.2
5 x 0.8 ±0.1
0.5 ±0.1
4 x 1.7
8.4 ±0.4
0.25
M
A B
8˚ MAX.
0.1 B
Typical
All metal surfaces tin plated, except area of cut.
1) Typical
Metal surface min. X = 7.25, Y = 6.9
All metal surfaces tin plated, except area of cut.
GPT09062
Green Product
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pbfree finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
Revision History
Version
Date
Changes
Rev. 1.1
Rev. 1.0
2010-01-26
2009-11-12
Page 13: Package drawing for PG-TO220-5-11 corrected.
RoHS-compliant version of BTS432E2
Removal of straight lead package variant E3043
Page 1, page 13: RoHS compliance statement and Green product feature added
Page 1, page 13: Change to RoHS compliant packages; PG-TO220-5-11 for
standard (staggered) variant; PG-TO263-5-2 for E3062A variant.
Page 2: Thermal resistance junction to ambient for SMD version set to typically
33K/W.
Page 2: Pin marking removed.
Page 6, 9: Discontinued variants removed from truth table & options overview.
Legal disclaimer updated
Data Sheet
13
2010-Jan-26
PROFET® BTS 432 E2
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
Data Sheet
14
2010-Jan-26
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