BTS307 E3062A Data Sheet (368 KB, EN)

PROFET® BTS307
Smart High-Side Power Switch
Product Summary
Overvoltage protection
Operating voltage
On-state resistance
Load current (ISO)
Features
 Overload protection
 Current limitation
 Short circuit protection
 Thermal shutdown
 Overvoltage protection
 Fast demagnetization of inductive loads
 Reverse battery protection1)
 Open drain diagnostic output
 Open load detection in OFF-state
 CMOS compatible input
 Loss of ground and loss of Vbb protection
 Electrostatic discharge (ESD) protection
Vbb(AZ)
Vbb(on)
RON
IL(ISO)
65
V
5.8 ... 58 V
250 m
1.7
A
PG-TO263-5-2
 Green Product (RoHS compliant)
 AEC Qualified
Application
 C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
 Most suitable for inductive loads
 Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic

feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.
+ V bb
Voltage
source
Overvoltage
protection
Current
limit
3
Gate
protection
V Logic
2
Voltage
Charge pump
sensor
Level shifter
Limit for
unclamped
ind. loads
Rectifier
IN
OUT
5
Temperature
sensor
Open load
ESD
4
Logic
Load
detection
ST
Short circuit
detection

PROFET
GND
1
Signal GND
)
1
Load GND
With external current limit (e.g. resistor RGND=150 ) in GND connection, resistor in series with ST
connection, reverse load current limited by connected load.
Data Sheet
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BTS307
Pin
Symbol
Function
1
GND
-
Logic ground
2
IN
I
Input, activates the power switch in case of logical high signal
3
Vbb
+
Positive power supply voltage,
the tab is shorted to this pin
4
ST
S
Diagnostic feedback
5
OUT
(Load, L)
O
Output to the load
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Supply voltage (overvoltage protection see page 3)
Supply voltage for short circuit protection2)
Tj Start=-40 ...+150°C
Load current (Short circuit current, see page 4)
Operating temperature range
Storage temperature range
Power dissipation (DC), TC  25 °C
Electrostatic discharge capability (ESD)
IN, ST:
(Human Body Model)
all other pins:
Input voltage (DC)
Current through input pin (DC)
Current through status pin (DC)
Symbol
Vbb
Vbb
IL
Tj
Tstg
Ptot
VESD
VIN
IIN
IST
Values
65
40
Unit
V
V
self-limited
-40 ...+150
-55 ...+150
50
1.0
tbd (>1.0)
-0.5 ... +36
2.0
5.0
A
°C
W
kV
V
mA
see internal circuit diagrams page 5
Thermal Characteristics
Parameter and Conditions
Thermal resistance
Symbol
chip - case: RthJC
junction - ambient (free air):
2)
RthJA
min
---
Values
typ max
-2.5
-75
Unit
K/W
Status fault signal in case of short to GND. Internal thermal shutdown after several milliseconds. External
shutdown in response to the status fault signal in less than about 1 ms necessary, if the device is used with
higher Vbb.
Data Sheet
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BTS307
Electrical Characteristics
Parameter and Conditions
Symbol
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Values
min
typ
max
Unit
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
IL = 2 A, Vbb = 24 V
Tj=25 °C: RON
Tj=150 °C:
Nominal load current, ISO Norm (pin 3 to 5)
VON = 0.5 V, TC = 85 °C
Output current (pin 5) while GND disconnected or
GND pulled up, Vbb=32 V, VIN= 0, see diagram
page 6
Turn-on time to 90% VOUT:
Turn-off time to 10% VOUT:
RL = 12 , Vbb = 20V, Tj =-40...+150°C
Slew rate on, 10 to 30% VOUT,
RL = 12 , Vbb = 20V, Tj =-40...+150°C
Slew rate off, 10 to 30% VOUT,
RL = 12 , Vbb = 20V, Tj =-40...+150°C
Operating Parameters
Operating voltage 3)
Tj =-40...+150°C:
Undervoltage shutdown
Tj =-40...+150°C:
Undervoltage restart
Tj =-40...+150°C:
Undervoltage restart of charge pump
see diagram page 10
Tj =-40...+150°C:
Undervoltage hysteresis
Vbb(under) = Vbb(u rst) - Vbb(under)
Overvoltage protection4)
Tj =-40...+150°C:
Ibb=40 mA
Standby current (pin 3),
VIN=0
Tj=-40...+150°C:
5)
Operating current (Pin 1) , VIN=5 V
)
3
4)
)
5
IL(ISO)
IL(GNDhigh)
--
220
250
500
1.4
390
1.7
m
--
--
-1.1
15
20
---
80
70
s
dV /dton
--
--
6
V/s
-dV/dtoff
--
--
7
V/s
Vbb(on)
Vbb(under)
Vbb(u rst)
Vbb(ucp)
5.8
2.7
---
---5.6
58
4.7
4.9
7.5
V
V
V
V
--
0.4
--
V
65
70
--
V
ton
toff
Vbb(under)
Vbb(AZ)
A
Ibb(off)
IGND
A
mA
---
10
2.2
50
--
mA
At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT Vbb - 2 V
See also VON(CL) in table of protection functions and circuit diagram page 6.
Add IST, if IST > 0, add IIN, if VIN>5.5 V
Data Sheet
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BTS307
Parameter and Conditions
Symbol
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Protection Functions6)
Initial peak short circuit current limit (pin 3 to 5)
Tj =-40°C:
Tj =25°C:
Tj =+150°C:
Output clamp (inductive load switch off)
at VOUT = Vbb - VON(CL)
IL= 1 A, Tj =-40..+150°C:
Thermal overload trip temperature
Thermal hysteresis
Reverse battery (pin 3 to 1) 7)
Values
min
typ
max
Unit
IL(SCp)
--4.0
-10
--
19
---
A
59
150
---
--10
--
75
--32
V
°C
K
V
--
6
--
A
2.4
3
4
V
V
VON(SC)
--
2.5
--
RI
--
20
--
k
VIN(T+)
VIN(T-)
 VIN(T)
IIN(off)
1
0.8
-1
--0.5
--
2.5
--30
V
V
V
A
On state input current (pin 2), VIN = 3.5? V
IIN(on)
10
25
70
A
Delay time for status with open load
td(ST OL3)
--
200
--
s
Status output (open drain)
Zener limit voltage Tj =-40...+150°C, IST = +1.6 mA: VST(high)
ST low voltage Tj =-40...+150°C, IST = +1.6 mA: VST(low)
5.4
--
6.1
--
-0.4
V
Diagnostic Characteristics
Open load detection current
IL(off)
(included in standby current Ibb(off))
Open load detection voltage
Short circuit detection voltage
(pin 3 to 5)
VON(CL)
Tjt
Tjt
-Vbb
Tj=-40..150°C: VOUT(OL)
Input and Status Feedback8)
Input resistance
see circuit page 5
Input turn-on threshold voltage
Input turn-off threshold voltage
Input threshold hysteresis
Off state input current (pin 2), VIN = 0.4 V
after Input neg. slope (see diagram page 10)
6)
)
7
8)
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
Requires 150  resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 2 and circuit page 6).
If a ground resistor RGND is used, add the voltage drop across this resistor.
Data Sheet
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BTS307
Truth Table
Input-
Output
level
level
Normal
operation
Open load
Status
BTS307
L
L
L
H
H
H
9
)
L
H
H
H
H
L
L
L
H
L
L
L
H
H
H
H
H
L
L
L
H
L
L
L
L
L
H
L
L
no overvoltage shutdown,
see normal operation
Short circuit
to GND
Short circuit
to Vbb
Overtemperature
Undervoltage
Overvoltage
L = "Low" Level
H = "High" Level
X = don't care
Z = high impedance, potential depends on external circuit
Status signal after the time delay shown in the diagrams (see fig 5. page 10)
Terms
Status output
+5V
Ibb
3
I IN
2
IL
V
IN
VST
OUT
PROFET
I ST
V
R ST(ON)
Vbb
IN
4
VON
5
GND
ST
ESDZD
GND
1
bb
R
IGND
ESD-Zener diode: 6.1 V typ., max 5 mA;
RST(ON) < 0  at 1.6 mA, ESD zener diodes are not to
be used as voltage clamp at DC conditions. Operation
in this mode may result in a drift of the zener voltage
(increase of up to 1 V).
VOUT
GND
Short circuit detection
Input circuit (ESD protection)
R
IN
ST
Fault Signal at ST-Pin: VON > 2.5 V typ, no switch off by
the PROFET itself, external switch off recommended!
I
+ V bb
ESD-ZD I
I
V
ON
I
GND
OUT
ESD zener diodes are not to be used as voltage clamp
at DC conditions. Operation in this mode may result in
a drift of the zener voltage (increase of up to 1 V).
)
9
Logic
unit
Short circuit
detection
Power Transistor off, high impedance, internal pull up current source for open load detection.
Data Sheet
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BTS307
Inductive and overvoltage output clamp
GND disconnect
+ V bb
V
Z
3
+5V
VON
IN
2
12k
PROFET
OUT
V
bb
OUT
5
ST
4
P R OFE T
GND
Vbb
GND
1
V
IN VST
V
GND
VON clamped to -- V typ.
For Vbb=24V and VIN=0V: VST>2.8V @ IST   if pulled up as shown.
Any kind of load. In case of Input=high is VOUT  VIN - VIN(T+) .
Overvolt. and reverse batt. protection
GND disconnect with GND pull up
+ V bb
V
R IN
IN
RI
3
Z2
2
Logic
R ST
IN
Vbb
PROFET
ST
V
Z1
4
P R O FE T
OUT
5
ST
GND
1
GND
R GND
V
Signal GND
V
bb
V
IN ST
V
GND
VZ1 = 6.2 V typ., VZ2 = 70 V typ., RGND = 150 ,
RST= 15 k, RI= 20 k typ.
Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND >0, no VST = low signal available.
Open-load detection
Vbb disconnect with energized inductive
load
OFF-state diagnostic condition: VOUT > 3 V typ.; IN low
3
high
2
IN
Vbb
PROFET
OFF
4
I
Logic
unit
5
ST
GND
1
L(OL)
Open load
detection
OUT
V
V
bb
OUT
Normal load current can be handled by the PROFET
itself.
Signal GND
Data Sheet
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BTS307
Vbb disconnect with charged external
inductive load
Inductive Load switch-off energy
dissipation
E bb
high
2
S
3
IN
Vbb
PROFET
4
E AS
OUT
IN
5
D
ST
PROFET
GND
=
OUT
ST
1
V
ELoad
Vbb
EL
GND
ZL
bb
L
{
RL
ER
If other external inductive loads L are connected to the PROFET,
additional elements like D are necessary.
Energy stored in load inductance:
2
EL = 1/2·L·I L
While demagnetizing load inductance, the energy
dissipated in PROFET is
EAS= Ebb + EL - ER=  VON(CL)·iL(t) dt,
with an approximate solution for RL  0 :
EAS=
Data Sheet
7
IL· L
IL·RL
·(V + |VOUT(CL)|)· ln (1+
)
2·RL bb
|VOUT(CL)|
2013-10-10
BTS307
Options Overview
all versions: High-side switch, Input protection, ESD protection and reverse battery
protection with 150  in GND connection, protection against loss of ground
Type
Logic version
BTS 410D2 410E2 410G2 410H2
Overtemperature protection with hysteresis
Tj >150 °C, latch function10)11)
Tj >150 °C, with auto-restart on cooling
Short circuit to GND protection
D
E
G
X
X
X
X
X
X
X
308
H
X
switches off when VON>3.5 V typ. and Vbb> 8 V
typ10) (when first turned on after approx. 150 s)
switches off when VON>8.5 V typ.10)
(when first turned on after approx. 150 s)
307
X
X
X
Achieved through overtemperature protection
X
Open load detection
in OFF-state with sensing current 6 A typ.
in ON-state with sensing voltage drop across
power transistor
X
X
X
X
X
X
Undervoltage shutdown with auto restart
X
X
X
X
X
X
Overvoltage shutdown with auto restart
X
X
X
X
-
X
X
X
X
X
X
X
X
X
-
X
X
X
-12)
12)
-12)
X
X
X
Status feedback for
overtemperature
short circuit to GND
short to Vbb
-
open load
X
X
X
X
X
X
undervoltage
X
-
-
-
X
-
overvoltage
X
-
-
-
-
-
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
Status output type
CMOS
X
Open drain
Output negative voltage transient limit
(fast inductive load switch off)
to Vbb - VON(CL)
Load current limit
high level (can handle loads with high inrush currents)
low level (better protection of application)
Protection against loss of GND
X
X
) Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (V
OUT 
0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch
between turn on and td(SC).
11)
With latch function. Reseted by a) Input low, b) Undervoltage, c) Overvoltage
12)
Low resistance short Vbb to output may be detected in ON-state by the no-load-detection
10
Data Sheet
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BTS307
Timing diagrams
Figure 3a: Short circuit:
shut down by overtempertature, reset by cooling
Figure 1a: Vbb turn on, :
IN
IN
V
V OUT
t d(bb IN)
bb
normal
operation
V
I
OUT
Output short to GND
I
L
L(SCp)
I
L(SCr)
A
ST open drain
ST
t
t
A
in case of too early VIN=high the device may not turn on (curve A)
td(bb IN) approx. 150 s
Figure 2a: Switching an inductive load,
Heating up requires several milliseconds, depending on external
conditions. External shutdown in response to status fault signal
recommended.
Figure 4a: Overtemperature:
Reset if Tj <Tjt
IN
IN
ST
ST
V
V
OUT
OUT
T
I
J
L
t
t
Data Sheet
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BTS307
Figure 5a: Open load, : detection in OFF-state, turn
on/off to open load
Figure 6a: Undervoltage:
IN
IN
t
d(ST OL3)
ST
V
bb
V
bb(under)
Vbb(u cp)
V
bb(u rst)
V
OUT
V OUT
I
L
normal
open
ST open drain
t
*)
t
td(ST,OL3) depends on external circuitry because of high
impedance
*) IL = 6 A typ
Figure 6b: Undervoltage restart of charge pump
V on
Figure 5b: Open load, : detection in OFF-state, open
load occurs in off-state
ST
V
on-state
off-state
IN
V
OUT
V
V
OUT(OL)
V
I
L
normal
*)
open
bb(u
rst)
bb(u cp)
bb(under)
Vbb
normal
*)
charge pump starts at Vbb(ucp) =5.6 V typ.
t
*) IL = 6 A typ
Data Sheet
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BTS307
Figure 7a: Overvoltage, no shutdown:
IN
Vbb
V
VON(CL)
OUT
VOUT(OL)
ST
t
Data Sheet
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BTS307
Package and Ordering Code
All dimensions in mm
PG-TO263-5-2
BTS307 E3062A
Published by
Infineon Technologies AG,
D-81726 München
© Infineon Technologies AG 201
All Rights Reserved.
Ordering code
SP001104812
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Data Sheet
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2013-10-10
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