BTS4160DGA Data Sheet (863 KB, EN)

D a t a S h e e t , R e v. 1 . 0 , M ar c h 2 00 8
B TS 41 60 DG A
S m a rt H i g h - S i d e P o w e r S w i t c h
A u to m o t i v e P o w e r
BTS4160DGA
1
Overview 3
2
Block Diagram 5
3
3.1
3.2
3.3
Pin Configuration 6
Pin Assignment 6
Pin Definitions and Functions 6
Voltage and Current Definition 7
4
4.1
4.2
4.3
General Product Characteristics 8
Absolute Maximum Ratings 8
Functional Range 9
Thermal Resistance 9
5
5.1
5.2
5.3
5.3.1
5.4
Power Stage 10
Output ON-State Resistance 10
Turn ON / OFF Characteristics 10
Inductive Output Clamp 11
Maximum Load Inductance 12
Electrical Characteristics Power Stage 13
6
6.1
6.2
6.3
6.4
6.5
6.5.1
6.6
Protection Mechanisms 14
Loss of Ground Protection 14
Undervoltage Protection 14
Overvoltage Protection 14
Reverse Polarity Protection 15
Overload Protection 15
Current Limitation 15
Electrical Characteristics Protection Functions 17
7
7.1
7.2
7.2.1
7.2.2
7.3
Diagnostic Mechanism 18
ST 0/1 Pin 18
ST0/1 Signal in Case of Failures 18
Diagnostic in Open Load, Channel OFF 18
ST 0/1 Signal in case of Over Temperature 20
Electrical Characteristics Diagnostic Functions 21
8
8.1
8.2
Input Pins 22
Input Circuitry 22
Electrical Characteristics 22
9
9.1
Application Information 23
Further Application Information 23
10
Package Outlines 24
11
Revision History 25
Data Sheet
2
Rev. 1.0, 2008-03-18
Smart High-Side Power Switch
BTS4160DGA
Two Channel Device
1
Overview
Basic Features
•
•
•
•
•
•
•
•
•
•
Fit for 12V application
Two Channel Device
Very low Stand-by Current
CMOS Compatible Inputs
Electrostatic Discharge Protection (ESD)
Optimized Electromagnetic Compatibility
Logic ground independent from load ground
Very low Leakage Current from OUT to the load in OFF state
Green Product (RoHS compliant)
AEC Qualified
PG-DSO-14-37
Description
The BTS4160DGA is a dual channel Smart High-Side Power Switch. It is embedded in a PG-DSO-14-37 package,
providing protective functions and diagnostics. The power transistor is built by a N-channel power MOSFET with
charge pump. The device is monolithically integrated in Smart technology. It is specially designed to drive relays
as well as resistive loads in the harsh automotive environment.
Table 1
Electrical Parameters (short form)
Parameter
Symbol
Value
Operating voltage range
VSOP
PBULB
VS (AZ)
RDS(ON)
IL (nom)
IL_SCR
IS(off)
-Vs(REV)
5.5V .... 20V
Maximum load per channel
Over voltage protection
Max ON State resistance at Tj = 150°C per channel
Nominal load current (one channel active)
Minimum current limitation
Standby current for the whole device with load
Maximum reverse battery voltage
2 * R5W, relays or LED
43V
320mΩ
1.8A
6.5A
8µA
16V
Diagnostic Feature
•
•
•
Open load in OFF
Feedback of the thermal shutdown in ON state
Diagnostic feedback with open drain output
Type
Package
Marking
BTS4160DGA
PG-DSO-14-37
BTS4160DGA
Data Sheet
3
Rev. 1.0, 2008-03-18
BTS4160DGA
Overview
Protection Functions
•
•
•
•
•
•
•
Short circuit protection
Overload protection
Current limitation
Thermal shutdown
Overvoltage protection (including load dump) with external resistor
Loss of ground and loss of VS protection
Electrostatic discharge protection (ESD)
Application
•
All types of relays and resistive loads
Data Sheet
4
Rev. 1.0, 2008-03-18
BTS4160DGA
Block Diagram
2
Block Diagram
Channel 0
VS
voltage sensor
internal
power
supply
over
temperature
driver
logic
IN0
gate control
&
charge pump
ESD
protection
T
clamp for
inductive load
over current
switch off
OUT 0
open load detection
ST 0
VS
Channel 1
T
IN1
Control and protection circuit equivalent to channel 0
ST 1
OUT 1
GND
Figure 1
Data Sheet
Block diagram .emf
Block diagram for the BTS4160DGA
5
Rev. 1.0, 2008-03-18
BTS4160DGA
Pin Configuration
3
Pin Configuration
3.1
Pin Assignment
Vs
1
14 Vs
GND
2
13
OUT0
IN0
3
12
OUT0
ST0
4
11
NC
IN1
5
10
OUT1
ST1
6
9
OUT1
Vs
7
8
Vs
Pinout SO14 full diag.vsd
Figure 2
Pin Configuration
3.2
Pin Definitions and Functions
Pin
Symbol
Function
2
GND
Ground; Ground connection
3
IN0
Input channel 0
Input signal for channel 0. Activate the channel in case of logic high level
4
ST 0
Diagnostic feedback; Channel 0. Open drain
5
IN1
Input channel 1
Input signal for channel 1. Activate the channel in case of logic high level
6
ST 1
Diagnostic feedback; Channel 1. Open drain
9;10
OUT1
Output 1; Protected High side power output channel 11)
11
NC
Not Connected
12;13
OUT0
Output 0; Protected High side power output channel 01)
1, 7, 8, 14
VS
Battery voltage
Design the wiring for the simultaneous max. short circuit currents from channel 0
and 1 and also for low thermal resistance
1) All output pins of a channel have to be connected together on the PCB.
Data Sheet
6
Rev. 1.0, 2008-03-18
BTS4160DGA
Pin Configuration
3.3
Voltage and Current Definition
Figure 3 shows all terms used in this data sheet, with associated convention for positive values.
IS
VS
VS
IIN 0
V IN 0
VD S0
IIN 1
IN0
OUT0
IN1
OUT1
VD S1
IOU T0
IOU T1
VIN 1
IST0
VOU T0
ST 0
V OU T1
VST0
IST1
ST 1
V ST1
GND
IGN D
Voltage and current convention dual
full diag.vsd
Figure 3
Data Sheet
Voltage and current definition
7
Rev. 1.0, 2008-03-18
BTS4160DGA
General Product Characteristics
4
General Product Characteristics
4.1
Absolute Maximum Ratings
Absolute Maximum Ratings 1)
Tj = 25°C; (unless otherwise specified)
Pos.
Parameter
Symbol
Limit values
Unit
Conditions
Min.
Max.
-0.3
43
V
–
0
16
V
–
0
20
V
RECU = 20mΩ,
RCable = 16mΩ/m,
LCable = 1µH/m,
Voltages
4.1.1
4.1.2
4.1.3
VS
Reverse polarity Voltage
- VS(REV)
Supply voltage for short circuit protection Vbat(SC)
Supply voltage
l = 0 or 5m 2)
see Chapter 6
Input pins
4.1.4
Voltage at INPUT pins
4.1.5
Current through INPUT pins
VIN
IIN
-10
16
V
–
-0.3
0.3
mA
–
IST
-5
5
mA
–
Status pin
4.1.6
Current through ST pin
Power stage
4.1.7
Load current
| IL |
–
IL(LIM)
A
–
4.1.8
Power dissipation (DC), all channel
active
PTOT
–
0.9
W
4.1.9
Maximum Switchable inductive energy,
single pulse
EAS
–
65
mJ
TA = 85°C,
Tj <150°C
IL = 2.9A,
VS = 12V
TJ = 150°C
Tj
∆T j
-40
150
°C
–
–
60
K
–
Tstg
-55
150
°C
–
VESD
VESD
VESD
-1
1
kV
HBM3)
-4
4
kV
HBM3)
-5
5
kV
HBM3)
Temperatures
4.1.10
Junction Temperature
4.1.11
Dynamic temperature increase while
switching
4.1.12
Storage Temperature
ESD Susceptibility
4.1.13
ESD Resistivity IN pin
4.1.14
ESD Resistivity ST pin
4.1.15
ESD Resistivity OUT to all other pins
shorted
1) Not subject to production test, specified by design
2) Set up in accordance to AEC Q100-012 and AEC Q101-006
3) ESD susceptibility HBM according to EIA/JESD 22-A 114B
Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Data Sheet
8
Rev. 1.0, 2008-03-18
BTS4160DGA
General Product Characteristics
Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are
not designed for continuous repetitive operation.
4.2
Pos.
Functional Range
Parameter
Symbol
Limit values
Min.
Max.
Unit
Conditions
VIN = 4.5V,
RL = 12Ω,
VDS < 0.5V
Tj = -40°C,
VDS < 0.5V
VIN = 5V
4.2.1
Operating Voltage
VSOP
5.5
20
V
4.2.2
Undervoltage switch OFF
VSUV
–
4.5
V
4.2.3
Operating current
One channel active
Two channels active
IGND
–
–
0.9
1.7
Standby current for whole device
with load
IS(OFF)
–
–
–
8
8
12
4.2.4
mA
µA
Tj = 25°C
Tj = 85°C1)
Tj = 150°C,
Vs = 12V,
RL = 12Ω,
VIN = 0V
1) Not subject to production test. Specified by design
Note: Within the functional range the IC operates as described in the circuit description. The electrical
characteristics are specified within the conditions given in the related electrical characteristics table.
4.3
Pos.
Thermal Resistance
Parameter
Symbol
4.3.1
Junction to Soldering Point each
channel
RthJSP
4.3.2
Junction to Ambient
RthJA
Limit values
Min.
Typ.
Max.
–
–
15
72
–
–
–
–
Unit
Conditions
K/W
–1)
K/W
with 6cm² cooling
area1)
1) Not subject to production test, specified by design
Data Sheet
9
Rev. 1.0, 2008-03-18
BTS4160DGA
Power Stage
5
Power Stage
The power stages are built by an N-channel vertical power MOSFET (DMOS) with charge pump.
5.1
Output ON-State Resistance
The ON-state resistance RDS(ON) depends on the supply voltage as well as the junction temperature Tj. Figure 4
shows the dependencies for the typical ON-state resistance. The behavior in reverse polarity is described in
Chapter 6.4.
600
Rds on (m Ohm ) @ +150°C
Rds on (m Ohm ) @ +25°C
Rds on (m Ohm ) @ -40°C
500
Rdson(mOhm)
400
300
200
100
0
5
7
9
11
13
15
17
19
VS (V)
Figure 4
Typical ON-State Resistance
A high signal (See Chapter 8) at the input pin causes the power DMOS to switch ON with a dedicated slope, which
is optimized in terms of EMC emission.
5.2
Turn ON / OFF Characteristics
Figure 5 shows the typical timing when switching a resistive load.
IN
VIN_H_min
V IN_L_max
t
V OUT
90% V S
dV/dt
OFF
tON
70% V S
dV/dt
ON
30% V S
tOFF
10% V S
t
Switching times.vsd
Figure 5
Data Sheet
Turn ON/OFF (resistive) timing
10
Rev. 1.0, 2008-03-18
BTS4160DGA
Power Stage
5.3
Inductive Output Clamp
When switching OFF inductive loads with high side switches, the voltage VOUT drops below ground potential,
because the inductance intends to continue driving the current. To prevent the destruction of the device due to
high voltages, there is a voltage clamp mechanism implemented that keeps the negative output voltage at a certain
level (VS-VDS(AZ)). Please refers to Figure 6 and Figure 7 for details. Nevertheless, the maximum allowed load
inductance is limited.
VS
V DS
IN
LOGIC
IL
V BAT
OUT
GND
VIN
VOUT
L, RL
Output clamp.vsd
Figure 6
Output clamp (OUT0 and OUT1)
IN
t
VOUT
VS
t
VS-VDS(AZ)
tpeak
IL
t
Switching an inductance.vsd
Figure 7
Data Sheet
Switching an inductance
11
Rev. 1.0, 2008-03-18
BTS4160DGA
Power Stage
5.3.1
Maximum Load Inductance
During demagnetization of inductive loads, energy has to be dissipated in the BTS4160DGA. This energy can be
calculated with following equation:
V S – V DS ( AZ )
RL × IL 
L
E = V DS ( AZ ) × ------- × ---------------------------------- × ln  1 – --------------------------------- + IL

RL
RL
V S – V DS ( AZ )
Following equation simplifies under the assumption of RL = 0Ω.
VS
2
1
E = --- × L × I ×  1 – ---------------------------------
2
V S – V DS ( AZ )
The energy, which is converted into heat, is limited by the thermal design of the component. See Figure 8 for the
maximum allowed inductivity.
1000
ZL (mH)
100
10
1
1
2
3
4
5
6
IL (A)
max eas.vsd
Figure 8
Data Sheet
Maximum energy dissipation single pulse, Tj,Start = 150 °C
12
Rev. 1.0, 2008-03-18
BTS4160DGA
Power Stage
5.4
Electrical Characteristics Power Stage
Electrical Characteristics: Power Stage
VS = 12 V, Tj = -40 °C to +150 °C. Typical values are given at Tj = 25°C
Pos.
5.4.1
Parameter
ON-State Resistance per channel
Symbol
RDS(ON)
Limit values
Min.
Typ.
Max.
–
160
–
Unit
Conditions
mΩ
IL = 2A,
VIN = 5V,
Tj = 25°C,
See Figure 41)
A
Tj = 150°C.
TA = 85°C1),
Tj <150°C.
52
V
IDS = 40mA2)
1
5
µA
0.2
–
1
V/µs
VIN = 0V,
VOUT = 0V.
RL=12Ω,
VS=12V.
Slew rate OFF
70% to 40% VS
-dV/dtOFF 0.2
–
1.1
V/µs
5.4.7
Turn-ON time to 90% VS
Includes propagation delay
tON
–
100
250
µs
5.4.8
Turn-OFF time to 10% VS
Includes propagation delay
tOFF
–
100
270
µs
Nominal load current per channel
One channel active
Two channel active
IL(nom)
5.4.3
Drain to source clamping voltage
VDS(AZ) = VS-VOUT
VDS(AZ)
5.4.4
Output leakage current per channel IL(OFF)
5.4.5
Slew rate ON
10% to 30% VS
dV/dtON
5.4.6
5.4.2
–
260
320
1.7
1.2
–
–
–
–
41
47
–
See Figure 5
1) Not subject to production test, specified by design
2) Voltage is measured by forcing IDS.
Data Sheet
13
Rev. 1.0, 2008-03-18
BTS4160DGA
Protection Mechanisms
6
Protection Mechanisms
The device provides embedded protective functions. Integrated protection functions are designed to prevent the
destruction of the IC from fault conditions described in the data sheet. Fault conditions are considered as “outside”
normal operating range. Protection functions are designed for neither continuous nor repetitive operation.
6.1
Loss of Ground Protection
In case of loss of the module ground, where the load remains connected to ground, the device protects itself by
automatically turning OFF (when it was previously ON) or remains OFF, regardless of the voltage applied on IN
pins. In that case, a maximum I(OUTGND) can flow out of the output.
6.2
Undervoltage Protection
Below VSOP_min, , the under voltage mechanism is met. If the supply voltage is below the under voltage mechanism,
the device is OFF (turns OFF). As soon as the supply voltage is above the under voltage mechanism, then the
device can be switched ON and the protection functions are operational.
6.3
Overvoltage Protection
There is a clamp mechanism for over voltage protection. To guarantee this mechanism operates properly in the
application, the current in the zener diode ZDAZ has to be limited by a ground resistor. Figure 9 shows a typical
application to withstand overvoltage issues. In case of supply greater than VS(AZ), the power transistor switches
ON and the voltage across logic section is clamped. As a result, the internal ground potential rises to VS - VS(AZ).
Due to the ESD zener diodes, the potential at pins IN and ST 0/1 rises almost to that potential, depending on the
impedance of the connected circuitry. Integrated resistors are provided at the IN pins to protect the input circuitry
from excessive current flow during this condition but an external resistor must be provided at the ST0/1 pins.
VccµC
R
PU_ST 0/1
R
IN0
IN1
R ST 0
ST 0
R
ST 1
ST 1
VS
PU_ST 0/1
VBAT
R IN0
ZDAZ
RIN1
LOGIC
OUT
ZD ESD
GND
R GND
RL
Overvoltage protec tion dual diag full.vs d
Figure 9
Over voltage protection with external components
In the case the supply voltage is in between of VS(SC) max and VDS(AZ), the output transistor is still operational and
follow the input. If at least one channel is in ON state, parameters are no longer warranted and lifetime is reduced
compared to normal mode. This specially impacts the short circuit robustness, as well as the maximum energy
EAS the device can handle.
Data Sheet
14
Rev. 1.0, 2008-03-18
BTS4160DGA
Protection Mechanisms
6.4
Reverse Polarity Protection
In case of reverse polarity, the intrinsic body diode causes power dissipation. The current in this intrinsic body
diode is limited by the load itself. Additionally, the current into the ground path and the logical pins has to be limited
to the maximum current described in Chapter 4.1, sometimes with an external resistor. Figure 10 shows a typical
application. The RGND resistor is used to limit the current in the zener protection of the device. Resistors RIN and
RST are used to limit the current in the logic of the device and in the ESD protection stage. The recommended value
for RGND is 150Ω, for RST 0/1 = 15kΩ. In case the over voltage is not considered in the application, RGND can be
replaced by a Shottky diode.
VccµC
Micro controller
protection diodes
R PU ST 0
R
R
PU ST1
ST 0
IN0
R IN0
IN1
RIN1
VS
-VDS(REV)
ST 0
OUT0, 1
ST1
R
VBAT
IL(nom)
RL
ST 1
G ND
ZD ESD
ZD body
R GND
Figure 10
Reverse polarity protection with external components
6.5
Overload Protection
Reverse Polarity dual full diag.vsd
In case of overload, or short circuit to ground, the BTS4160DGA offers several protections mechanisms.
6.5.1
Current Limitation
At first step, the instantaneous power in the switch is maintained to a safe level by limiting the current to the
maximum current allowed in the switch IL(LIM). During this time, the DMOS temperature is increasing, which affects
the current flowing in the DMOS. At thermal shutdown, the device turns OFF and cools down. A restart mechanism
is used, after cooling down, the device restarts and limits the current to IL(SCR). Figure 11 shows the behavior of
the current limitation as a function of time.
Data Sheet
15
Rev. 1.0, 2008-03-18
BTS4160DGA
Protection Mechanisms
IN
t
IL
IL(LIM)
IL(SCr)
tOFF(SC)
t
ST
t
Current limitation with diag full.vs
Figure 11
Data Sheet
Current limitation function of the time
16
Rev. 1.0, 2008-03-18
BTS4160DGA
Protection Mechanisms
6.6
Electrical Characteristics Protection Functions
Electrical Characteristics: Protection
VS = 12 V, Tj = -40 °C to +150 °C. Typical values are given at Tj = 25°C
Pos.
Parameter
Symbol
Limit values
Min.
Typ.
Max.
0
–
2
Unit
Conditions
mA
GND disconnected.
Loss of ground
6.6.1
Output leakage current while GND IOUT(GND)
disconnected
1)
Reverse polarity
6.6.2
Drain source diode voltage during
reverse polarity
-VDS(REV)
–
600
–
mV
IL= -2A,
VS = 12V,
VIN = 0V,
Tj = 150°C1).
VS(AZ)
41
47
52
V
Is = 40mA
Overvoltage
6.6.3
Over voltage protection
Overload condition
6.6.4
Load current limitation
IL(LIM)
–
–
5
–
9
–
14
–
–
A
Tj = -40°C,
Tj = 25°C,
Tj = 150°C.
6.6.5
Repetitive short circuit current
limitation
IL(SCR)
–
6.5
–
A
One channel1)
6.6.6
Thermal shutdown temperature
150
–
–
°C
-1)
6.6.7
Thermal shutdown hysteresis
TjSC
∆TJT
–
10
–
K
- 1)
1) Not subject to production test, but specified by design
Data Sheet
17
Rev. 1.0, 2008-03-18
BTS4160DGA
Diagnostic Mechanism
7
Diagnostic Mechanism
For diagnosis purpose, the BTS4160DGA provides a status pin per channel.
7.1
ST 0/1 Pin
BTS4160DGA status pins are an open drain, active low circuit. Figure 12 shows the equivalent circuitry. As long
as no “hard” failure mode occurs (Short circuit to GND / Over temperature or open load in OFF), the signal is
permanently high, and due to a required external pull-up to the logic voltage will exhibit a logic high in the
application. A suggested value for the RPU ST01 is 15kΩ.
.
VccµC
R PU ST
R ST
ST
Channel 0
Diagnostic
Logic
ZDESD
GND
Figure 12
Status output circuitry
7.2
ST0/1 Signal in Case of Failures
ST pin full diag.vsd
Table 3 gives a quick reference for the logical state of the ST 0/1 pins during device operation.
Table 3
ST Pin truth table
Device operation
IN
OUT
ST
Normal operation
L
L
H
H
H
H
L
> V(OL)
L1)
H
H
H
L
L
H
L
L
Open Load channel
Over temp channel
H
1)L if potential at the output exceeds the Openload detection voltage
7.2.1
Diagnostic in Open Load, Channel OFF
For open load diagnosis in OFF-state, an external output pull-up resistor (ROL) is recommended. For calculation
of the pull-up resistor value, the leakage currents and the open load threshold voltage VOL(OFF) has to be taken into
account. Figure 13 gives a sketch of the situation and Figure 14 shows the typical timing diagram.
Ileakage defines the leakage current in the complete system, including IL(OFF) (see Chapter 5.4) and external
leakages e.g. due to humidity, corrosion, etc... in the application.
To reduce the stand-by current of the system, an open load resistor switch SOL is recommended.
Data Sheet
18
Rev. 1.0, 2008-03-18
BTS4160DGA
Diagnostic Mechanism
If the channel is OFF, the output is no longer pulled down by the load and VOUT voltage rises to nearly VS. This is
recognized by the device as open load. The voltage threshold is given by VOL(OFF). In that case, the ST 0/1 signal
is switched to a logical low VST01(L).
Vb a t
SOL
VS
R OL
OUT
ILOFF
OL
comp.
Ileakage
GND
VOL(OFF)
Rleakage
R GND
Open Load in OFF.vsd
Figure 13
Open load detection in OFF electrical equivalent circuit
IN
t
VOUT
VOL(OFF)
t
IL
ST
tDST(ON_OL)
tDST(OFF_OL)
t
t DST(ON_OL)
VST(HIGH)
VST(LOW)
t
Diagnostic In Open load full diag .vsd
Figure 14
Data Sheet
ST 0/1 in open load condition
19
Rev. 1.0, 2008-03-18
BTS4160DGA
Diagnostic Mechanism
7.2.2
ST 0/1 Signal in case of Over Temperature
In case of over temperature, the junction temperature reaches the thermal shutdown temperature TjSC.
In that case, the ST 0/1 signal is toggling between VST01(L) and VST01(H). Figure 15 gives a sketch of the situation.
IN
t
VOUT
ST
t
t dST(OFF _OvL)
tdST(ON_OvL)
t
TJ
TJSC
∆TJSC
t
Diagnostic In Overload full toggling . vsd
Figure 15
Data Sheet
Sense signal in overtemperature condition
20
Rev. 1.0, 2008-03-18
BTS4160DGA
Diagnostic Mechanism
7.3
Electrical Characteristics Diagnostic Functions
Electrical Characteristics: Diagnostics
VS = 12 V, Tj = -40 °C to +150 °C. Typical values are given at Tj = 25°C
Pos.
Parameter
Symbol
Limit values
Unit
Conditions
Min.
Typ.
Max.
VOL(OFF)
1.7
2.8
4.0
V
–
Status output (open drain)
High level; Zener limit voltage
VST (HIGH)
5.4
–
–
V
IST=+1.6mA1),
Status output (open drain)
Low level
VST (LOW)
–
–
0.6
V
IST=+1.6mA1)
Load condition threshold for diagnostic
7.3.1
Open Load detection threshold
in OFF state
ST 0/1 pin
7.3.2
7.3.3
Zener Limit voltage.
Diagnostic timing
7.3.4
Status change after positive
input slope with open load
tdST(ON_OL)
–
10
20
µs
-2)
7.3.5
Status change after positive
input slope with overload
tdST(ON_OvL)
30
–
–
µs
-2)
7.3.6
Status change after negative
input slope with open load
tdST(OFF_OL)
–
–
500
µs
–
7.3.7
Status change after negative
input slope with overload
tdST(OFF_OvL) –
–
20
µs
-2)
1) If ground resistor RGND is used, the voltage drop across this resistor has to be added
2) Not subject to production test, specified by design
Data Sheet
21
Rev. 1.0, 2008-03-18
BTS4160DGA
Input Pins
8
Input Pins
8.1
Input Circuitry
The input circuitry is CMOS compatible. The concept of the Input pin is to react to voltage transition and not to
voltage threshold. With the Schmidt trigger, it is impossible to have the device in an un-defined state, if the voltage
on the input pin is slowly increasing or decreasing. The output is either OFF or ON but cannot be in an linear or
undefined state. The input circuitry is compatible with PWM applications. Figure 16 shows the electrical equivalent
input circuitry. The pull down current source ensures the channel is OFF with a floating input.
IN
RI
II
To driver’s logic
ESD
Input circuitry.vsd
Figure 16
Input pin circuitry
8.2
Electrical Characteristics
Electrical Characteristics: Diagnostics
VS = 12 V, Tj = -40 °C to +150 °C, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified) Typical values are given at Tj = 25°C
Pos.
Parameter
Symbol
Limit values
Unit
Conditions
Min.
Typ.
Max.
–
–
1
V
-1)
2.5
–
–
V
1)
–
0.2
–
V
-2)
5
–
20
µA
10
–
60
µA
VIN = 0.4V
VIN = 5V
2.5
4
6
kΩ
See Figure 16
INput pins characteristics
8.2.1
Low level input voltage
8.2.2
High level input voltage
8.2.3
Input voltage hysteresis
8.2.4
Low level input current
8.2.5
High level input current
8.2.6
Input resistance
VIN(L)
VIN(H)
VIN(HYS)
IIN(L)
IIN(H)
RI
1) If ground resistor RGND is used, the voltage drop across this resistor has to be added
2) Not subject to production test, specified by design
Data Sheet
22
Rev. 1.0, 2008-03-18
BTS4160DGA
Application Information
9
Application Information
Note: The following information is given as a hint for the implementation of the device only and shall not be
regarded as a description or warranty of a certain functionality, condition or quality of the device.
VBAT
VDD
Vdd
Microcontroller
(e.g. XC22xx)
VBAT_SW
Vs
OUT
IN0
OUT
IN1
IN
ST0
IN
ST1
OUT0
VBAT_SW
BTS4160DGA
OUT1
GND
GND
R GND
Figure 17
Application diagram with BTS4160DGA
Note: This is a very simplified example of an application circuit. The function must be verified in the real application.
9.1
•
Further Application Information
For further information you may visit http://www.infineon.com/
Data Sheet
23
Rev. 1.0, 2008-03-18
BTS4160DGA
Package Outlines
10
Package Outlines
0.33 x 45˚
1.27
14
+0.25
0.64 -0.23
6 ±0.2
14x
0.254 M A
8
7
1
1)
8.69 +0.05
-0.11
8˚ MAX.
.01
C
0.1
0.254 M B C 14x
+0.08
0.41 -0.06
A
+0.05
0.2 -0
0.25 -0.15
(1.47)
1.75 MAX.
1)
4 +0.05
-0.13
B
Index Marking
1)
Figure 18
Does not include plastic or metal protrusion of 0.25 max. per side
PG-DSO-14-37 (Plastic Dual Small Outline Package)
Green Product (RoHS compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pbfree finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
Data Sheet
24
Rev. 1.0, 2008-03-18
BTS4160DGA
Revision History
11
Revision History
Version
Date
Changes
1.0
2008-03-18
Creation of the data sheet
Data Sheet
25
Rev. 1.0, 2008-03-18
Edition 2008-03-18
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
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