MIC5011 Micrel, Inc. MIC5011 Minimum Parts High- or Low-Side MOSFET Driver General Description Features The MIC5011 is the “minimum parts count” member of the Micrel MIC501X driver family. These ICs are designed to drive the gate of an N-channel power MOSFET above the supply rail in high-side power switch applications. The 8-pin MIC5011 is extremely easy to use, requiring only a power FET and nominal supply decoupling to implement either a high- or low-side switch. The MIC5011 charges a 1nF load in 60µs typical with no external components. Faster switching is achieved by adding two 1nF charge pump capacitors. Operation down to 4.75V allows the MIC5011 to drive standard MOSFETs in 5V low-side applications by boosting the gate voltage above the logic supply. In addition, multiple paralleled MOSFETs can be driven by a single MIC5011 for ultra-high current applications. Other members of the Micrel driver family include the MIC5013 protected 8-pin driver. For new designs, Micrel recommends the pin-compatible MIC5014 MOSFET driver. • 4.75V to 32V operation • Less than 1µA standby current in the “off” state • Internal charge pump to drive the gate of an N-channel power FET above supply • Available in small outline SOIC packages • Internal zener clamp for gate protection • Minimum external parts count • Can be used to boost drive to low-side power FETs operating on logic supplies • 25µs typical turn-on time with optional external capacitors • Implements high- or low-side drivers Typical Applications Ordering Information Applications • • • • Lamp drivers Relay and solenoid drivers Heater switching Power bus switching Part Number 14.4V ON 10µF + MIC5011 1 V+ C1 8 2 Input Com 7 3 Source C2 6 4 Gnd Gate 5 Control Input OFF Standard Pb-Free MIC5011BN MIC5011YN Temperature Range Package –40ºC to +85ºC 8-pin Plastic DIP MIC5011BM MIC5011YM –40ºC to +85ºC 8-pin SOIC IRF531 #6014 Figure 1. High Side Driver ON 5V 10µF + MIC5011 1 V+ Control Input OFF Note: The MIC5011 is ESD sensitive. 48V C1 8 2 Input Com 7 3 Source C2 6 4 Gnd Gate 5 100W Heater IRF530 Protected under one or more of the following Micrel patents: patent #4,951,101; patent #4,914,546 Figure 2. Low Side Driver Micrel, Inc. • 2180 Fortune Drive • San Jose, CA 95131 • USA • tel + 1 (408) 944-0800 • fax + 1 (408) 474-1000 • http://www.micrel.com July 2005 1 MIC5011 MIC5011 Micrel, Inc. Absolute Maximum Ratings (Note 1, 2) Operating Ratings (Notes 1, 2) Supply Voltage Pin 1 Input Voltage, Pin 2 Source Voltage, Pin 3 Current into Pin 3 Gate Voltage, Pin 5 Junction Temperature Power Dissipation 1.25W θJA (Plastic DIP) 100°C/W θJA (SOIC) 170°C/W Ambient Temperature: B version –40°C to +85°C Storage Temperature –65°C to +150°C Lead Temperature 260°C (Soldering, 10 seconds) Supply Voltage (V+), Pin 1 4.75V to 32V high side 4.75V to 15V low side (V+), –0.5V to 36V –10V to V+ –10V to V+ 50mA –1V to 50V 150°C Pin Description (Refer to Typical Applications) Pin Number Pin Name 1 V+ Pin Function Supply; must be decoupled to isolate from large transients caused by the power FET drain. 10µF is recommended close to pins 1 and 4. 2 Input Turns on power MOSFET when taken above threshold (3.5V typical). Requires <1 µA to switch. 3 Source Connects to source lead of power FET and is the return for the gate clamp zener. Can safely swing to –10V when turning off inductive loads. 4 Ground 5 Gate Drives and clamps the gate of the power FET. Will be clamped to approximately –0.7V by an internal diode when turning off inductive loads. 6, 7, 8 C2, Com, C1 Optional 1nF capacitors reduce gate turn-on time; C2 has dominant effect. Pin Configuration 1 2 3 4 MIC5011 MIC5011 C1 8 Com 7 V+ Input Source Gnd 2 C2 6 5 Gate July 2005 MIC5011 Micrel, Inc. Electrical Characteristics (Note 3) Test circuit. TA = –55°C to +125°C, V+ = 15V, all switches open, unless otherwise specified. Parameter Conditions Supply Current, I1 V+ Min = 32V Logic Input Voltage V+ = 4.75V Logic Input Current, I2 V+ Input Capacitance Pin 2 Gate Drive, VGATE S1, S2 closed, Zener Clamp, VGATE – VSOURCE Gate Turn-on Time, tON (Note 4) Gate Turn-off Time, tOFF 10 µA 8 20 mA VIN = 5V, S2 closed 1.6 4 mA 2 V Adjust VIN for VGATE high 4.5 V 5.0 V VIN = 0V –1 V+ = 4.75V, IGATE = 0, VIN = 4.5V 7 Adjust VIN for VGATE high = 32V VIN = 32V V+ VS = V+, VIN = 5V V+ µA 1 µA 5 pF 10 V = 15V, IGATE = 100µA, VIN = 5V 24 27 11 12.5 15 = 32V, VS = 32V 11 13 16 V 25 50 µs 4 10 µs V+ = 15V, VS = 15V S2 closed, VIN = 5V Units 0.1 Adjust VIN for VGATE low V+ = 15V Max VIN = 0V, S2 closed VIN = V+ = 32V V+ = 5V Typical VIN switched from 0 to 5V; measure time for VGATE to reach 20V VIN switched from 5 to 0V; measure time for VGATE to reach 1V V V Note 1 Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Electrical specifications do not apply when operating the device beyond its specified Operating Ratings. Note 2 The MIC5011 is ESD sensitive. Note 3 Minimum and maximum Electrical Characteristics are 100% tested at TA = 25°C and TA = 85°C, and 100% guaranteed over the entire range. Typicals are characterized at 25°C and represent the most likely parametric norm. Note 4 Test conditions reflect worst case high-side driver performance. Low-side and bootstrapped topologies are significantly faster—see Applications Information. Maximum value of switching speed seen at 125°C, units operated at room temperature will reflect the typical values shown. Test Circuit V+ + 1µF V IN 500Ω 1W MIC5011 1 V+ 2 Input C1 8 Com 7 3 Source C2 6 4 Gnd Gate 5 1nF VGATE 1nF S1 S2 I5 VS July 2005 1nF 3 MIC5011 MIC5011 Micrel, Inc. Typical Characteristics (Continued) Supply Current 12 14 12 10 10 8 8 6 6 4 4 2 0 2 0 5 10 15 20 25 30 0 35 3 6 9 12 15 SUPPLY VOLTAGE (V) High-side Turn-on Time* High-side Turn-on Time* 300 120 TURN-ON TIME (µS) 140 CGATE =1 nF 250 200 150 100 50 0 3 6 9 12 80 60 40 20 0 3 6 9 12 15 SUPPLY VOLTAGE (V) SUPPLY VOLTAGE (V) High-side Turn-on Time* High-side Turn-on Time* TURN-ON TIME (mS) 1.4 3.0 CGATE =10 nF 2.5 2.0 1.5 1.0 1.2 CGATE =10 nF C2=1 nF 1.0 0.8 0.6 0.4 0.2 0.5 0 0 CGATE =1 nF C2=1 nF 100 0 15 3.5 TURN-ON TIME (mS) 0 SUPPLY VOLTAGE (V) 350 0 DC Gate Voltage above Supply 3 6 9 12 0 15 0 3 6 9 12 15 SUPPLY VOLTAGE (V) SUPPLY VOLTAGE (V) * Time for gate to reach V+ + 5V in test circuit with VS = V+ – 5V. MIC5011 4 July 2005 MIC5011 Micrel, Inc. Typical Characteristics (Continued) Low-side Turn-on Time for Gate = 5V CGATE =10 nF 100 30 10 CGATE =1 nF 3 1 0 3000 3 6 9 12 CGATE =10 nF 0 3 6 9 12 CGATE =1 nF 3 6 9 12 C2=1 nF CGATE =10 nF 300 100 30 CGATE =1 nF 10 3 0 15 3 6 9 12 SUPPLY VOLTAGE (V) SUPPLY VOLTAGE (V) Turn-off Time Turn-on Time 15 2.0 1.75 CGATE =10 nF 40 15 1000 NORMALIZED TURN-ON TIME TURN-ON TIME (µS) CGATE =1 nF 3 3000 50 30 1.5 1.25 20 CGATE =1 nF 10 3 6 9 12 1.0 0.75 15 0.5 –25 SUPPLY VOLTAGE (V) July 2005 10 Low-side Turn-on Time for Gate = 10V 10 0 0 30 Low-side Turn-on Time for Gate = 10V 100 3 0 CGATE =10 nF 100 SUPPLY VOLTAGE (V) 300 30 300 1 15 C2=1 nF SUPPLY VOLTAGE (V) 1000 TURN-ON TIME (µS) TURN-ON TIME (µS) 300 1000 TURN-ON TIME (µS) TURN-ON TIME (µS) 1000 Low-side Turn-on Time for Gate = 5V 0 25 50 75 100 125 DIE TEMPERATURE (°C) 5 MIC5011 Micrel, Inc. Charge Pump Output Current 250 CHARGE-PUMP CURRENT (mA) CHARGE-PUMP CURRENT (µA) MIC5011 VGATE =V+ 200 150 VGATE =V++5V 100 50 VS=V +–5V 0 0 5 10 15 20 25 30 Charge Pump Output Current 1.0 VGATE =V+ 0.8 0.6 0.4 VGATE =V ++5V 0.2 0 C2=1 nF VS=V +–5V 0 SUPPLY VOLTAGE (V) 5 10 15 20 25 30 SUPPLY VOLTAGE (V) Block Diagram Ground 4 V+ 1 C1 Com C2 8 7 6 CHARGE PUMP 5 Gate 500Ω Input 2 LOGIC MIC5011 12.5V 3 Source Applications Information Functional Description (Refer to Block Diagram) The MIC5011 functions are controlled via a logic block connected to the input pin 2. When the input is low, all functions are turned off for low standby current and the gate of the power MOSFET is also held low through 500Ω to an N-channel switch. When the input is taken above the turn-on threshold (3.5V typical), the N-channel switch turns off and the charge pump is turned on to charge the gate of the power FET. MIC5011 The charge pump incorporates a 100kHz oscillator and onchip pump capacitors capable of charging 1nF to 5V above supply in 60µs typical. With the addition of 1nF capacitors at C1 and C2, the turn-on time is reduced to 25µs typical (see Figure 3). The charge pump is capable of pumping the gate up to over twice the supply voltage. For this reason, a zener clamp (12.5V typical) is provided between the gate pin 5 and source pin 3 to prevent exceeding the VGS rating of the MOSFET at high supplies. 6 July 2005 MIC5011 Micrel, Inc. Applications Information (Continued) and it dissipates the energy stored in the load inductance. The MIC5011 source pin (3) is designed to withstand this negative excursion without damage. External clamp diodes are unnecessary. Low-Side Driver (Figure 2). A key advantage of the lowside topology is that the load supply is limited only by the MOSFET BVDSS rating. Clamping may be required to protect the MOSFET drain terminal from inductive switching transients. The MIC5011 supply should be limited to 15V in low-side topologies, otherwise a large current will be forced through the gate clamp zener. Low-side drivers constructed with the MIC501X family are also fast; the MOSFET gate is driven to near supply immediately when commanded ON. Typical circuits achieve 10V enhancement in 10µs or less on a 12 to 15V supply. Modifying Switching Times (Figure 3). High-side switching times can be improved by a factor of 2 or more by adding external charge pump capacitors of 1nF each. In cost-sensitive applications, omit C1 (C2 has a dominant effect on speed). Do not add external capacitors to the MOSFET gate. Add a resistor (1kΩ to 51kΩ) in series with the gate to slow down the switching time. Construction Hints High current pulse circuits demand equipment and assembly techniques that are more stringent than normal, low current lab practices. The following are the sources of pitfalls most often encountered during prototyping. Supplies: many bench power supplies have poor transient response. Circuits that are being pulse tested, or those that operate by pulse-width modulation will produce strange results when used with a supply that has poor ripple rejection, or a peaked transient response. Always monitor the power supply voltage that appears at the drain of a high-side driver (or the supply side of the load in a low-side driver) with an oscilloscope. It is not uncommon to find bench power supplies in the 1 kW class that overshoot or undershoot by as much as 50% when pulse loaded. Not only will the load current and voltage measurements be affected, but it is possible to over-stress various components—especially electrolytic capacitors—with possibly catastrophic results. A 10µF supply bypass capacitor at the chip is recommended. Residual Resistances: Resistances in circuit connections may also cause confusing results. For example, a circuit may employ a 50mΩ power MOSFET for low drop, but careless construction techniques could easily add 50 to 100mΩ resistance. Do not use a socket for the MOSFET. If the MOSFET is a TO-220 type package, make high-current drain connections to the tab. Wiring losses have a profound effect on high-current circuits. A floating millivoltmeter can identify connections that are contributing excess drop under load. 14.4V ON 10µF Circuit Topologies The MIC5011 is suited for use with standard MOSFETs in high- or low-side driver applications. In addition, the MIC5011 works well in applications where, for faster switching times, the supply is bootstrapped from the MOSFET source output. Low voltage, high-side drivers (such as shown in Figure 1) are the slowest; their speed is reflected in the gate turn-on time specifications. The fastest drivers are the low-side and bootstrapped high-side types (Figures 2 and 4). Load current switching times are often much faster than the time to full gate enhancement, depending on the circuit type, the MOSFET, and the load. Turn-off times are essentially the same for all circuits (less than 10µs to VGS = 1V). The choice of one topology over another is based on a combination of considerations including speed, voltage, and desired system characteristics. High-Side Driver (Figure 1). The high-side topology works well down to V+ = 7V with standard MOSFETs. From 4.75 to 7V supply, a logic-level MOSFET can be substituted since the MIC5011 will not reach 10V gate enhancement (10V is the maximum rating for logic-compatible MOSFETs). High-side drivers implemented with MIC501X drivers are self-protected against inductive switching transients. During turn-off an inductive load will force the MOSFET source 5V or more below ground, while the MIC5011 holds the gate at ground potential. The MOSFET is forced into conduction, July 2005 + Control Input OFF MIC5011 1 V+ C1 8 2 Input Com 7 3 Source C2 6 4 Gnd Gate 5 1nF 1nF IRF531 LOAD Figure 3. High Side Driver with External Charge Pump Capacitors Bootstrapped High-Side Driver (Figure 4). The speed of a high-side driver can be increased to better than 10µs by bootstrapping the supply off of the MOSFET source. This topology can be used where the load is pulse-width modulated (100Hz to 20kHz), or where it is energized continuously. The Schottky barrier diode prevents the MIC5011 supply pin from dropping more than 200mV below the drain supply, and it also improves turn-on time on supplies of less than 10V. Since the supply current in the “off” state is only a small leakage, the 100nF bypass capacitor tends to remain charged for several seconds after the MIC5011 is turned off. In a PWM application the chip supply is sustained at a higher potential than the system supply, which improves switching time. 7 MIC5011 MIC5011 Micrel, Inc. Applications Information (Continued) 7 to 15V 1N5817 1N4001 (2) + 100nF 15V 10µF MIC5011 Control Input 1 V+ 2 Input C1 8 Com 7 33pF 33kΩ To MIC5011 Input 100kΩ MPSA05 3 Source C2 6 4 Gnd Gate 5 IRF540 4N35 10mA Control Input 100kΩ 1kΩ LOAD Figure 4. Bootstrapped High-Side Driver Figure 5. Improved Opto-Isolator Performance Opto-Isolated Interface (Figure 5). Although the MIC5011 has no special input slew rate requirement, the lethargic transitions provided by an opto-isolator may cause oscillations on the rise and fall of the output. The circuit shown accelerates the input transitions from a 4N35 opto-isolator by adding hysteresis. Opto-isolators are used where the control circuitry cannot share a common ground with the MIC5011 and high-current power supply, or where the control circuitry is located remotely. This implementation is intrinsically safe; if the control line is severed the MIC5011 will turn OFF. Industrial Switch (Figure 6). The most common manual control for industrial loads is a push button on/off switch. The “on” button is physically arranged in a recess so that in a panic situation the “off” button, which extends out from the control box, is more easily pressed. This circuit is compatible with control boxes such as the CR2943 series (GE). The circuit is configured so that if both switches close simultaneously, the “off” button has precedence. This application also illustrates how two (or more) MOSFETs can be paralleled. This reduces the switch drop, and distributes the switch dissipation into multiple packages. High-Voltage Bootstrap (Figure 7). Although the MIC5011 is limited to operation on 4.75 to 32V supplies, a floating bootstrap arrangement can be used to build a high-side switch that operates on much higher voltages. The MIC5011 and MOSFET are configured as a low-side driver, but the load is connected in series with ground. Power for the MIC5011 is supplied by a charge pump. A 20kHz square wave (15Vp-p) drives the pump capacitor and delivers current to a 100µF storage capacitor. A zener 24V + 100kΩ CR2943-NA102A ( GE ) MIC5011 1 V+ ON C1 8 10µF 2 Input Com 7 3 Source C2 6 OFF 4 Gnd Gate 5 330kΩ IRFP044 (2) LOAD Figure 6. 50-Ampere Industrial Switch MIC5011 8 July 2005 MIC5011 Micrel, Inc. Applications Information (Continued) 15V 1N4746 C1 8 Com 7 MIC5011 1N4003 (2) MPSA05 3 Source C2 6 4 Gnd Gate 5 100kΩ 4N35 10mA Control Input 1 V+ 2 Input 33kΩ 33pF 90V 1nF IRFP250 100kΩ 1/4 HP, 90V 5BPB56HAA100 ( GE ) 1kΩ 100nF 200V + 100µF M 1N4003 15Vp-p, 20kHz Squarewave Figure 7. High-Voltage Bootstrapped Driver diode limits the supply to 18V. When the MIC5011 is off, power is supplied by a diode connected to a 15V supply. The circuit of Figure 5 is put to good use as a barrier between low voltage control circuitry and the 90V motor supply. Half-Bridge Motor Driver (Figure 8). Closed loop control of motor speed requires a half-bridge driver. This topology presents an extra challenge since the two output devices should not cross conduct (shoot-through) when switching. Cross conduction increases output device power dissipation. Speed is also important, since PWM control requires the outputs to switch in the 2 to 20kHz range. The circuit of Figure 8 utilizes fast configurations for both the top- and bottom-side drivers. Delay networks at each input provide a 2 to 3µs dead time effectively eliminating cross conduction. Two of these circuits can be connected together to form an H-bridge for locked antiphase or sign/ magnitude control. 15V 1N5817 1N4148 MIC5011 1 V+ 22kΩ 220pF 15V 1N4001 (2) + 1µF C1 8 2 Input Com 7 3 Source C2 6 4 Gnd PWM INPUT 100nF Gate 5 + IRF541 12V, M 10A Stalled 10µF MIC5011 10kΩ 22kΩ 2N3904 1nF C1 8 1 V+ 2 Input Com 7 3 Source C2 6 4 Gnd Gate 5 IRF541 Figure 8. Half-Bridge Motor Driver July 2005 9 MIC5011 MIC5011 Micrel, Inc. Applications Information (Continued) 12V 12V MIC5011 MIC5011 1N4148 100kΩ 47µF + 1 V+ 2 Input 3 Source 4 Gnd 10µF C1 8 Com 7 C2 6 Gate 5 R 330kΩ IRFZ44 2 Input Com 7 3 Source C2 6 330kΩ 4 Gnd Gate 5 IRFZ44 1N4148 10kΩ 100nF 100Ω OUT P UT (Delay=2.5s) M T Figure 9. 30-Ampere Time-Delay Relay 12V START RUN Time-Delay Relay (Figure 9). The MIC5011 forms the basis of a simple time-delay relay. As shown, the delay commences when power is applied, but the 100kΩ/1N4148 could be independently driven from an external source such as a switch or another high-side driver to give a delay relative to some other event in the system. Hysteresis has been added to guarantee clean switching at turn-on. Motor Driver with Stall Shutdown (Figure 10). Tachometer feedback can be used to shut down a motor driver circuit when a stall condition occurs. The control switch is a 3-way type; the “START” position is momentary and forces the driver ON. When released, the switch returns to the “RUN” position, and the tachometer's output is used to hold the MIC5011 input ON. If the motor slows down, the tach output is reduced, and the MIC5011 switches OFF. Resistor “R” sets the shutdown threshold. Electronic Governor (Figure 11). The output of an ac tachometer can be used to form a PWM loop to maintain the speed of a motor. The tachometer output is rectified, partially filtered, and fed back to the input of the MIC5011. When the motor is stalled there is no tachometer output, and MIC5011 input is pulled high delivering full power to the motor. If the motor spins fast enough, the tachometer output is sufficient to pull the MIC5011 input low, shutting the output off. Since the rectified waveform is only partially filtered, the input oscillates around its threshold causing the MIC5011 to switch on and off at the frequency of the tachometer signal. A PWM action results since the average dc voltage at the input decreases as the motor spins faster. The 1kΩ potentiometer is used to set the running speed of the motor. Loop gain (and speed regulation) is increased by increasing the value of the 100nF filter capacitor. The performance of such a loop is imprecise, but stable and inexpensive. A more elaborate loop would consist of a PWM controller and a half-bridge. MIC5011 + C1 8 1 V+ + 10µF STOP Figure 10. Motor Stall Shutdown 15V MIC5011 330kΩ 330kΩ 10µF C1 8 1 V+ 2 Input Com 7 3 Source C2 6 4 Gnd + 1nF Gate 5 IRF541 1N4148 100nF 15V T M 1kΩ Figure 11. 10 Electronic Governor July 2005 MIC5011 Micrel, Inc. Applications Information (Continued) ON. C1 is discharged, and C2 is charged to supply through Q5. For the second phase Q4 turns off and Q3 turns on, pushing pin C2 above supply (charge is dumped into the gate). Q3 also charges C1. On the third phase Q2 turns off and Q1 turns on, pushing the common point of the two capacitors above supply. Some of the charge in C1 makes its way to the gate. The sequence is repeated by turning Q2 and Q4 back on, and Q1 and Q3 off. In a low-side application operating on a 12 to 15V supply, the MOSFET is fully enhanced by the action of Q5 alone. On supplies of more than approximately 14V, current flows directly from Q5 through the zener diode to ground. To prevent excessive current flow, the MIC5011 supply should be limited to 15V in low-side applications. The action of Q5 makes the MIC5011 operate quickly in low-side applications. In high-side applications Q5 precharges the MOSFET gate to supply, leaving the charge pump to carry the gate up to full enhancement 10V above supply. Bootstrapped high-side drivers are as fast as lowside drivers since the chip supply is boosted well above the drain at turn-on. Gate Control Circuit When applying the MIC5011, it is helpful to understand the operation of the gate control circuitry (see Figure 12). The gate circuitry can be divided into two sections: 1) charge pump (oscillator, Q1-Q5, and the capacitors) and 2) gate turn-off switch (Q6). When the MIC5011 is in the OFF state, the oscillator is turned off, thereby disabling the charge pump. Q5 is also turned off, and Q6 is turned on. Q6 holds the gate pin (G) at ground potential which effectively turns the external MOSFET off. Q6 is turned off when the MIC5011 is commanded on, and Q5 pulls the gate up to supply (through 2 diodes). Next, the charge pump begins supplying current to the gate. The gate accepts charge until the gate-source voltage reaches 12.5V and is clamped by the zener diode. A 2-output, three-phase clock switches Q1-Q4, providing a quasi-tripling action. During the initial phase Q4 and Q2 are + V Q5 Q3 Q1 125pF 125pF C1 100 kHz OSCILLATOR C2 COM C1 C2 Q2 Q4 G 500Ω OFF G AT E CLAMP ZENER 12.5V Q6 S ON Figure 12. Gate Control Circuit Detail July 2005 11 MIC5011 MIC5011 Micrel, Inc. Package Information PIN 1 DIMENSIONS: INCH (MM) 0.380 (9.65) 0.370 (9.40) 0.255 (6.48) 0.245 (6.22) 0.135 (3.43) 0.125 (3.18) 0.300 (7.62) 0.013 (0.330) 0.010 (0.254) 0.018 (0.57) 0.130 (3.30) 0.100 (2.54) 0.0375 (0.952) 0.380 (9.65) 0.320 (8.13) 8-Pin Plastic DIP (N) 0.026 (0.65) MAX) PIN 1 0.157 (3.99) 0.150 (3.81) DIMENSIONS: INCHES (MM) 0.050 (1.27) TYP 0.064 (1.63) 0.045 (1.14) 0.197 (5.0) 0.189 (4.8) 0.020 (0.51) 0.013 (0.33) 45° 0.0098 (0.249) 0.0040 (0.102) 0°–8° 0.010 (0.25) 0.007 (0.18) 0.050 (1.27) 0.016 (0.40) SEATING PLANE 0.244 (6.20) 0.228 (5.79) 8-Pin SOIC (M) MICREL INC. TEL 2180 FORTUNE DRIVE SAN JOSE, CA 95131 USA + 1 (408) 944-0800 FAX + 1 (408) 474-1000 WEB http://www.micrel.com This information furnished by Micrel in this data sheet is believed to be accurate and reliable. However no responsibility is assumed by Micrel for its use. Micrel reserves the right to change circuitry and specifications at any time without notification to the customer. Micrel Products are not designed or authorized for use as components in life support appliances, devices or systems where malfunction of a product can reasonably be expected to result in personal injury. Life support devices or systems are devices or systems that (a) are intended for surgical implant into the body or (b) support or sustain life, and whose failure to perform can be reasonably expected to result in a significant injury to the user. A Purchaser's use or sale of Micrel Products for use in life support appliances, devices or systems is a Purchaser's own risk and Purchaser agrees to fully indemnify Micrel for any damages resulting from such use or sale. © 1998 Micrel, Inc. MIC5011 12 July 2005